2009. 11. 17 2/4
2N7000A
Revision No : 3
ELECTRICAL CHARACTERISTICS (Ta=25℃)
ON CHARACTERISTICS (Note 1)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Gate Threshold Voltage Vth VDS=VGS, ID=1mA 0.8 2.1 3 V
Drain-Source ON Resistance RDS(ON)
VGS=10V, ID=500mA - 1.2 5 Ω
VGS=4.5V, ID=75mA - 1.8 5.3
Drain-Source ON Voltage VDS(ON)
VGS=10V, ID=500mA - 0.6 2.5
V
VGS=4.5V, ID=75mA - 0.14 0.4
On State Drain Current ID(ON) VGS=4.5V, VDS=10V 75 600 - mA
Forward Transconductance gFS VDS=10V, ID=200mA 100 320 - mS
Drain-Source Diode Forward Voltage VSD VGS=0V, IS=200mA - 0.76 1.15 V
DYNAMIC CHARACTERISTICS
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Input Capacitance Ciss
VDS=25V, VGS=0V, f=1MHz
- 20 50
pFReverse Transfer Capacitance Crss - 4 5
Output Capacitance Coss - 11 25
Switching Time
Turn-On Time ton VDD=15V, RL=25Ω, ID=200mA,
VGS=10V, RGEN=25Ω
- - 10
nS
Turn-Off Time toff - - 10