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BDX53/A/B/C NPN Epitaxial Silicon Transistor Applications * Hammer Drivers, Audio Amplifiers Applications * Power Liner and Switching Applications Features * Power Darlington TR * Complement to BDX54, BDX54A, BDX54B and BDX54C respectively Equivalent Circuit C B TO-220 1 1.Base 2.Collector Absolute Maximum Ratings Symbol R1 3.Emitter R1 8.4k R2 0.3k R2 E TC = 25C unless otherwise noted Parameter Value Units VCBO Collector-Base Voltage : BDX53 : BDX53A : BDX53B : BDX53C 45 60 80 100 V V V V VCEO Collector-Emitter Voltage : BDX53 : BDX53A : BDX53B : BDX53C 45 60 80 100 V V V V VEBO Emitter-Base Voltage 5 V IC Collector Current (DC) 8 A ICP *Collector Current (Pulse) 12 A IB Base Current 0.2 A PC Collector Dissipation (TC = 25C) 60 W TJ Junction Temperature 150 C TSTG Storage Temperature - 65 to 150 C (c) 2011 Fairchild Semiconductor Corporation BDX53/A/B/C Rev. B0 www.fairchildsemi.com 1 BDX53/A/B/C -- NPN Epitaxial Silicon Transistor March 2011 Symbol TC = 25C unless otherwise noted Parameter VCEO(sus) * Collector-Emitter Sustaining Voltage : BDX53 : BDX53A : BDX53B : BDX53C Test Condition Min. IC = 100mA, IB = 0 45 60 80 100 Typ. Max. Units V V V V ICBO Collector Cut-off Current : BDX53 : BDX53A : BDX53B : BDX53C VCB = 45V, IE = 0 VCB = 60V, IE = 0 VCB = 80V, IE = 0 VCB = 100V, IE = 0 200 200 200 200 A A A A ICEO Collector Cut-off Current : BDX53 : BDX53A : BDX53B : BDX53C VCE = 22V, IB = 0 VCE = 30V, IB = 0 VCE = 40V, IB = 0 VCE = 50V, IB = 0 500 500 500 500 A A A A 2 mA IEBO Emitter Cut-off Current VEB = 5V, IC = 0 hFE * DC Current Gain VCE = 3V, IC = 3A VCE(sat) * Collector-Emitter Saturation Voltage IC = 3A, IB = 12mA 2 V VBE(sat) * Base-Emitter Saturation Voltage IC = 3A, IB = 12mA 2.5 V VF * Parallel Diode Forward Voltage IF = 3A IF = 8A 2.5 V V 750 1.8 2.5 * Pulse Test: PW=300s, duty Cycle =1.5% Pulsed (c) 2011 Fairchild Semiconductor Corporation BDX53/A/B/C Rev. B0 www.fairchildsemi.com 2 BDX53/A/B/C -- NPN Epitaxial Silicon Transistor Electrical Characteristics BDX53/A/B/C -- NPN Epitaxial Silicon Transistor Typical Performance Characteristics 3.4 100000 3.2 VBE(sat)[V], SATURATION VOLTAGE hFE, DC CURRENT GAIN VCE = 3V 10000 1000 IC = 250IB 3.0 2.8 2.6 2.4 2.2 2.0 1.8 1.6 1.4 1.2 1.0 100 0.1 1 0.8 0.1 10 1 IC[A], COLLECTOR CURRENT IC[A], COLLECTOR CURRENT Figure 1. DC current Gain Figure 2. Base-Emitter Saturation Voltage 3.2 3.0 IC = 250IB 3.0 2.8 VF(sat)[V], FORWARD VOLTAGE VCE(sat)[V], SATURATION VOLTAGE 10 2.8 2.6 2.4 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 2.6 2.4 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.6 0.1 1 0.4 0.1 10 1 IC[A], COLLECTOR CURRENT 10 IF[A], FORWARD CURRENT Figure 3. Collector-Emitter Saturation Voltage Figure 4. Damper Diode Forward Voltage 100 80 PC[W], POWER DISSIPATION IC Max. (Pulsed) 10 us 10 1m s IC Max. (Continuous) C D IC[A], COLLECTOR CURRENT 70 100us 1 BDX53 BDX53A BDX53B BDX53C 10 100 40 30 20 0 1000 0 25 50 75 100 125 150 175 o TC[ C], CASE TEMPERATURE VCE[V], COLLECTOR-EMITTER VOLTAGE Figure 5. Safe Operating Area Figure 6. Power Derating (c) 2011 Fairchild Semiconductor Corporation BDX53/A/B/C Rev. B0 50 10 0.1 1 60 www.fairchildsemi.com 3 BDX53/A/B/C -- NPN Epitaxial Silicon Transistor Physical Dimensions TO-220 4.50 0.20 2.80 0.10 (3.00) +0.10 1.30 -0.05 18.95MAX. (3.70) o3.60 0.10 15.90 0.20 1.30 0.10 (8.70) (1.46) 9.20 0.20 (1.70) 9.90 0.20 1.52 0.10 10.08 0.30 (1.00) 13.08 0.20 ) (45 1.27 0.10 0.80 0.10 2.54TYP [2.54 0.20] +0.10 0.50 -0.05 2.40 0.20 2.54TYP [2.54 0.20] 10.00 0.20 Dimensions in Millimeters (c) 2011 Fairchild Semiconductor Corporation BDX53/A/B/C Rev. B0 www.fairchildsemi.com 4 TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 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