RN2907~RN2909 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) (Bias Resistor built-in Transistor) RN2907, RN2908, RN2909 Unit: mm Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications z Including two devices in US6 (ultra super mini type with 6 leads) z With built-in bias resistors z Simplify circuit design z Reduce a quantity of parts and manufacturing process z Complementary to RN1907 to 1909 Equivalent Circuit and Bias Resistor Values Type No. R1 (k) R2 (k) RN2907 10 47 RN2908 22 47 RN2909 47 22 JEDEC JEITA 2-2J1A TOSHIBA Weight: 6.8 mg (typ.) Equivalent Circuit (Top View) Start of commercial production 1990-12 1 2014-03-01 RN2907~RN2909 Absolute Maximum Ratings (Ta = 25C) (Q1, Q2 Common) Characteristic Collector-base voltage RN2907 to 2909 Collector-emitter voltage Symbol Rating Unit VCBO -50 V VCEO -50 V RN2907 Emitter-base voltage -6 VEBO RN2908 -7 RN2909 -15 Collector current Collector power dissipation Junction temperature V RN2907 to 2909 Storage temperature range IC -100 mA PC* 200 mW Tj 150 C Tstg -55 to 150 C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc). * : Total rating Electrical Characteristics (Ta = 25C) (Q1, Q2 Common) Characteristic Collector cut-off current Symbol Test Circuit ICBO ICEO Min Typ. Max Unit VCB = -50V, IE = 0 -100 nA VCE = -50V, IB = 0 -500 nA VEB = -6V, IC = 0 -0.081 -0.15 VEB = -7V, IC = 0 -0.078 -0.145 RN2909 VEB = -15V, IC = 0 -0.167 -0.311 RN2907 80 80 70 -0.1 -0.3 -0.7 -1.8 -1.0 -2.6 -2.2 -5.8 -0.5 -1.0 -0.6 -1.16 -1.5 -2.6 RN2907 to 2909 RN2907 Emitter cut-off current DC current gain RN2908 RN2908 IEBO hFE RN2909 Collector-emitter saturation voltage RN2907 to 2909 RN2908 VCE (sat) VI (ON) IC = -5mA, IB = -0.25mA VCE = -0.2V, IC = -5mA RN2907 RN2908 RN2909 Input voltage (OFF) VCE = -5V, IC = -10mA RN2907 Input voltage (ON) Test Condition VI (OFF) RN2909 VCE = -5V, IC = -0.1mA mA V V V Translation frequency RN2907 to 2909 fT VCE = -10V, IC = -5mA 200 MHz Collector output capacitance RN2907 to 2909 Cob VCB = -10V, IE = 0, f = 1MHz 3 6 pF 7 10 13 15.4 22 28.6 32.9 47 61.1 0.191 0.213 0.232 0.421 0.468 0.515 1.92 2.14 2.35 RN2907 Input resistor RN2908 R1 RN2909 RN2907 Resistor ratio RN2908 RN2909 R1/R2 2 k 2014-03-01 RN2907~RN2909 (Q1, Q2 Common) 3 2014-03-01 RN2907~RN2909 (Q1, Q2 Common) 4 2014-03-01 RN2907~RN2909 Type Name Marking RN2907 RN2908 RN2909 5 2014-03-01 RN2907~RN2909 RESTRICTIONS ON PRODUCT USE * Toshiba Corporation, and its subsidiaries and affiliates (collectively "TOSHIBA"), reserve the right to make changes to the information in this document, and related hardware, software and systems (collectively "Product") without notice. * This document and any information herein may not be reproduced without prior written permission from TOSHIBA. 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