SRANSYS MMBT5551 FLECTRONICS LIMITED NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features Epitaxial Planar Die Construction Complementary PNP Type Available SOT-23 (MMBT5401) | bea Dim | Min | Max Ideal for Medium Power Amplification and [ft] A 0.37 | 0.51 Switching B 1.19 | 1.40 TOP| VIEW t c Cc 2.40 250 Mechanical Data [2] le] : O48 wt Case: SOT-23, Molded Plastic E ko = Terminals: Solderable per MIL-STD-202, - - Method 208 k++ H 2.65 | 3.05 Terminal Connections: See Diagram oa) K M J 0.013 | 0.15 Marking: KAN, 3S, 1F i* + K | 089 | 4.10 Weight: 0.008 grams (approx.) L L 0.45 | 0.64 M 0.076 | 0.178 All Dimensions in mm Maximum Ratings @ Ta = 25 C unless otherwise specified Characteristic Symbol MMBT5551 Unit Collector-Base Voltage VcBo 180 Vv Collector-Emitter Voltage VcEO 160 Vv Emitter-Base Voltage VEBO 6.0 Vv Collector Current - Continuous (Note 1) Ic 200 mA Power Dissipation (Note 1) Pa 350 mw Thermal Resistance, Junction to Ambient (Note 1) R va 357 K/iW Operating and Storage and Temperature Range Tj, Tsta -55 to +150 Cc Notes: 1. Valid provided that terminals are kept at ambient temperature. 2. Pulse test: Pulse width 300 s, dutycycle 2%.Electrical Characteristics @ Ta= 25 C unless otherwise specified Characteristic symbol | Min | Max | Unit Test Condition OFF CHARACTERISTICS (Note 2) Collector-Base Breakdown Voltage V(BR)CBO 180 Vv lc = 100 A, le =0 Collector-Emitter Breakdown Voltage V(BR)CEO 160 Vv Ic = 1.0mMA, Ip = 0 Emitter-Base Breakdown Voltage V(BR)EBO 6.0 Vv le=10 A, Ic=0 nA Vos = 120V, le=0 Collector Cutoff Current IcBo 50 A Vop = 120V. le=0, Ta=100C Emitter Cutoff Current lEBO 50 nA Vep = 4.0V, Ic = 0 ON CHARACTERISTICS (Note 2) 80 Io = 1.0MA, Voce = 5.0V DC Current Gain Nee 80 250 Ic = 10MA, Vce = 5.0V 30 lo = 50mA, Vce = 5.0V Collector-Emitter Saturation Voltage VcE(SaT) O30 V I= SOA, B= eon Base- Emitter Saturation Voltage VBE(SAT) 1.0 Vv IC = Boma B= rom SMALL SIGNAL CHARACTERISTICS Output Capacitance Cobo 6.0 pF Vop = 10V, f = 1.0MHz, le =0 : : VoeE= 10V, Ic = 1.0MA, Small Signal Current Gain Nte 50 250 f= 1.0kHz a . Voe = 10V, Ic = 10MA, Current Gain-Bandwidth Product fT 100 300 MHz f = 100MHz : Voce = 5.0V, Ic = 200 A, Noise Figure NF 8.0 dB Rg=1.0k | f= 1.0kHz Notes: 1. Valid provided that terminals are kept at ambient temperature. 2. Pulse test: Pulse width 300 s,dutycycle 2%.