ZHB6718
Document number: DS33211 Rev. 4 - 2
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ZHB6718
20V BIPOLAR TRANSISTOR H-BRIDGE IN SM-8
Features
BJT H-Bridge
2 x NPN + 2 x PNP
IC = 2.5A Continuous Collector Current
NPN Transistor
BVCEO > 20V
Low Saturation Voltage VCE(sat) < 150mV @ 1A
PNP Transistor
BVCEO > -20V
Low Saturation Voltage VCE(sat) < -200mV @ -1A
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Case: SM-8 (8 LEAD SOT223)
Case Material: Molded Plastic, “Green” Molding Compound;
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish - Matte Tin Plated Leads.
Solderable per MIL-STD-202, Method 208
Weight: 0.117 grams (Approximate)
Ordering Information (Note 4)
Part Number
Marking
Reel Size (inches)
Tape Width (mm)
ZHB6718TA
ZHB6718
7
12
Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen and Antimony free, "Green"
and Lead-Free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
Equivalent Circuit
Top View
Pin Out
Top View
SM-8
Green
Top View
Pinout
ZHB6718 = Product Type Marking Code
YWW = Date Code Marking
Y or Y = Last Digit of Year (ex: 5= 2015)
WW or WW = Week Code (01~53)
ZHB6718
Document number: DS33211 Rev. 4 - 2
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ZHB6718
Absolute Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
NPN
PNP
Unit
Collector-Base Voltage
VCBO
20
-20
V
Collector-Emitter Voltage
VCEO
20
-20
V
Emitter-Base Voltage
VEBO
7
-7
V
Continuous Collector Current
IC
2.5
-2.5
A
Peak Pulse Current (Note 5)
ICM
6
-6
A
Thermal Characteristics
Characteristic
Symbol
Value
Unit
Collector Power Dissipation
(Note 5)
PD
1.25
W
(Note 6)
2
Thermal Resistance, Junction to Ambient
(Note 5)
RθJA
100
C/W
(Note 6)
62.5
Thermal Resistance, Junction to Lead
RθJL
62
C/W
Operating and Storage Temperature Range
TJ,TSTG
-55 to +150
C
ESD Ratings (Note 7)
Characteristic
Symbol
Value
Unit
JEDEC Class
Electrostatic Discharge - Human Body Model
ESD HBM
4,000
V
3A
Electrostatic Discharge - Machine Model
ESD MM
400
V
C
Notes: 5. For a device with any single die active and mounted with the collector lead on 25mm x 25mm 2oz copper that is on a single-sided 1.6mm FR4 PCB;
device is measured under still air conditions whilst operating in steady-state.
6. Same as Note (5), except both Q1/Q3 active or Q2/Q4 active and equally sharing power.
7. Refer to JEDEC specification JESD22-A114 and JESD22-A115.
ZHB6718
Document number: DS33211 Rev. 4 - 2
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ZHB6718
Thermal Characteristics and Derating Information
ZHB6718
Document number: DS33211 Rev. 4 - 2
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ZHB6718
Thermal Characteristics and Derating Information (continued)
Note: The Safe Operating Area (SOA) charts shown are a combination of the worst case secondary breakdown characteristics for the NPN/PNP pair, and the
thermal curves demonstrating the power dissipation capability of the energized ZHB part (opposing NPN-PNP switched on) when mounted on a 50mm ×
50mm FR4 PCB. The two cases show:
i) full copper present and
ii) with minimal copper present — this being defined as an SM-8 footprint with 1.5mm tracks to the edge of the PCB.
For example, on a 50mm × 50mm full copper PCB, the ZHB6718 will safely dissipate 2W under DC conditions, taking note of continuous current ratings and
voltage limits. Higher powers can be tolerated for pulsed operation, while the shorter pulse widths (100μs and 1ms) being relevant for assessment of
switching conditions.
ZHB6718
Document number: DS33211 Rev. 4 - 2
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ZHB6718
NPN - Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
Collector-Base Breakdown Voltage
BVCBO
20
100
—
V
IC = 100µA
Collector-Emitter Breakdown Voltage (Note 8)
BVCEO
20
27
—
V
IC = 10mA
Emitter-Base Breakdown Voltage
BVEBO
5
8.3
—
V
IE = 100µA
Collector Cut Off Current
ICBO
—
—
0.1
µA
VCB = 16V
Emitter Cut Off Current
IEBO
—
—
0.1
µA
VEB = 4V
DC Current Transfer Static Ratio (Note 8)
hFE
200
400
—
—
IC = 10mA, VCE = 2V
300
450
—
IC = 100mA, VCE = 2V
200
360
—
IC = 2A, VCE = 2V
—
180
—
IC = 6A, VCE = 2V
Collector-Emitter Saturation Voltage (Note 8)
VCE(sat)
—
8
15
mV
IC = 0.1A, IB = 10mA
—
70
150
IC = 1A, IB = 10mA
—
130
200
IC = 2.5A, IB = 50mA
Base-Emitter Saturation Voltage (Note 8)
VBE(sat)
—
0.89
1.0
V
IC = 2.5A, IB = 50mA
Base-Emitter Turn-on Voltage (Note 8)
VBE(on)
—
0.79
—
V
IC = 2.5A, VCE = 2V
Transitional Frequency
fT
100
140
—
MHz
IC = 50mA, VCE = 10V,
f = 100MHz
Output Capacitance
Cobo
—
23
30
pF
VCB = 10V, f = 1MHz
Switching Time
t(ON)
—
170
—
nS
VCC = 10V, IC = 1A,
IB1 = -IB2 = 10mA
t(Off)
—
400
—
nS
Note: 8. Measured under pulsed conditions. Pulse width ≤ 300μs. Duty cycle ≤ 2%.
ZHB6718
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ZHB6718
NPN – Typical Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
ZHB6718
Document number: DS33211 Rev. 4 - 2
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ZHB6718
PNP - Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
Collector-Base Breakdown Voltage
BVCBO
-20
-65
—
V
IC = -100µA
Collector-Emitter Breakdown Voltage (Note 9)
BVCEO
-20
-55
—
V
IC = -10mA
Emitter-Base Breakdown Voltage
BVEBO
-5
-8.8
—
V
IE = -100µA
Collector Cutoff Current
ICBO
—
—
-0.1
µA
VCB = -15V
Emitter Cutoff Current
IEBO
—
—
-0.1
µA
VEB = -4V
DC Current Transfer Static Ratio (Note 9)
hFE
300
475
—
—
IC = -10mA, VCE = -2V
300
450
—
IC = -100mA, VCE = -2V
150
230
—
IC = -2A, VCE = -2V
35
70
—
IC = -4A, VCE = -2V
—
30
—
IC = -6A, VCE = -2V
Collector-Emitter Saturation Voltage (Note 9)
VCE(sat)
—
-16
-40
mV
IC = -100mA, IB = -10mA
—
-130
-200
IC = -1A, IB = -20mA
—
-190
-260
IC = -2.5A, IB = -200mA
Base-Emitter Saturation Voltage (Note 9)
VBE(sat)
—
-0.98
-1.1
V
IC = -2.5A, IB = -200mA
Base-Emitter Turn-on Voltage (Note 9)
VBE(on)
—
-0.85
—
V
IC = -2.5A, VCE = -2V
Transitional Frequency
fT
150
180
—
MHz
IC = -50mA, VCE = -10V,
f = 100MHz
Output Capacitance
Cobo
—
21
30
pF
VCB = -10V, f = 1MHz
Switching Time
t(ON)
—
40
—
nS
VCC = -10V, IC = -1A,
IB1 = -IB2 = -20mA
t(OFF)
670
nS
Note: 9. Measured under pulsed conditions. Pulse width ≤ 300μs. Duty cycle ≤ 2%.
ZHB6718
Document number: DS33211 Rev. 4 - 2
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ZHB6718
PNP – Typical Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
ZHB6718
Document number: DS33211 Rev. 4 - 2
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ZHB6718
Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version.
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
Note: For high voltage applications, the appropriate industry sector guidelines should be considered with regards to creepage and clearance distances between
device terminals and PCB tracking.
b
D
E1
E
A
e
e1
A1
L
c
ø1
ø
ø2
Seating Plane
SM-8
Dim
Min
Max
Typ
A
--
1.70
1.60
A1
0.02
0.10
0.04
b
0.70
0.90
0.80
c
0.24
0.32
0.28
D
6.30
6.70
6.60
e
1.53 REF
e1
4.59 REF
E
6.70
7.30
7.00
E1
3.30
3.70
3.50
L
0.75
1.00
0.90
Ø
--
--
45°
Ø1
--
15°
--
Ø2
--
--
10°
All Dimensions in mm
Dimensions
Value (in mm)
C
1.52
C1
4.60
X
0.95
Y
2.80
Y1
6.80
Y1
XC
Y
C1
ZHB6718
Document number: DS33211 Rev. 4 - 2
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ZHB6718
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