ZHB6718 Green 20V BIPOLAR TRANSISTOR H-BRIDGE IN SM-8 Features Mechanical Data BJT H-Bridge 2 x NPN + 2 x PNP IC = 2.5A Continuous Collector Current NPN Transistor BVCEO > 20V Low Saturation Voltage VCE(sat) < 150mV @ 1A PNP Transistor BVCEO > -20V Low Saturation Voltage VCE(sat) < -200mV @ -1A Lead-Free Finish; RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. "Green" Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Case: SM-8 (8 LEAD SOT223) Case Material: Molded Plastic, "Green" Molding Compound; UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish - Matte Tin Plated Leads. Solderable per MIL-STD-202, Method 208 Weight: 0.117 grams (Approximate) SM-8 Top View Pin Out Top View Pinout Top View Equivalent Circuit Ordering Information (Note 4) Part Number ZHB6718TA Notes: Marking ZHB6718 Reel Size (inches) 7 Tape Width (mm) 12 Quantity Per Reel 1,000 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated's definitions of Halogen and Antimony free, "Green" and Lead-Free. 3. Halogen- and Antimony-free "Green" products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com/products/packages.html. Marking Information ZHB6718 = Product Type Marking Code YWW = Date Code Marking Y or Y = Last Digit of Year (ex: 5= 2015) WW or WW = Week Code (01~53) ZHB6718 Document number: DS33211 Rev. 4 - 2 1 of 10 www.diodes.com October 2015 (c) Diodes Incorporated ZHB6718 Absolute Maximum Ratings (@TA = +25C, unless otherwise specified.) Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Peak Pulse Current (Note 5) Symbol VCBO VCEO VEBO IC ICM NPN 20 20 7 2.5 6 PNP -20 -20 -7 -2.5 -6 Unit V V V A A Thermal Characteristics Characteristic Collector Power Dissipation Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Lead Operating and Storage Temperature Range Symbol (Note 5) (Note 6) (Note 5) (Note 6) PD RJA RJL TJ,TSTG Value 1.25 2 100 62.5 62 -55 to +150 Unit W C/W C/W C ESD Ratings (Note 7) Characteristic Electrostatic Discharge - Human Body Model Electrostatic Discharge - Machine Model Notes: Symbol ESD HBM ESD MM Value 4,000 400 Unit V V JEDEC Class 3A C 5. For a device with any single die active and mounted with the collector lead on 25mm x 25mm 2oz copper that is on a single-sided 1.6mm FR4 PCB; device is measured under still air conditions whilst operating in steady-state. 6. Same as Note (5), except both Q1/Q3 active or Q2/Q4 active and equally sharing power. 7. Refer to JEDEC specification JESD22-A114 and JESD22-A115. ZHB6718 Document number: DS33211 Rev. 4 - 2 2 of 10 www.diodes.com October 2015 (c) Diodes Incorporated ZHB6718 Thermal Characteristics and Derating Information ZHB6718 Document number: DS33211 Rev. 4 - 2 3 of 10 www.diodes.com October 2015 (c) Diodes Incorporated ZHB6718 Thermal Characteristics and Derating Information (continued) Note: The Safe Operating Area (SOA) charts shown are a combination of the worst case secondary breakdown characteristics for the NPN/PNP pair, and the thermal curves demonstrating the power dissipation capability of the energized ZHB part (opposing NPN-PNP switched on) when mounted on a 50mm x 50mm FR4 PCB. The two cases show: i) full copper present and ii) with minimal copper present -- this being defined as an SM-8 footprint with 1.5mm tracks to the edge of the PCB. For example, on a 50mm x 50mm full copper PCB, the ZHB6718 will safely dissipate 2W under DC conditions, taking note of continuous current ratings and voltage limits. Higher powers can be tolerated for pulsed operation, while the shorter pulse widths (100s and 1ms) being relevant for assessment of switching conditions. ZHB6718 Document number: DS33211 Rev. 4 - 2 4 of 10 www.diodes.com October 2015 (c) Diodes Incorporated ZHB6718 NPN - Electrical Characteristics (@TA = +25C, unless otherwise specified.) Symbol Min Typ Max Unit Collector-Base Breakdown Voltage Characteristic BVCBO 20 100 -- V IC = 100A Collector-Emitter Breakdown Voltage (Note 8) BVCEO 20 27 -- V IC = 10mA Emitter-Base Breakdown Voltage BVEBO 5 8.3 -- V IE = 100A Collector Cut Off Current ICBO -- -- 0.1 A VCB = 16V Emitter Cut Off Current IEBO -- -- 0.1 A VEB = 4V 200 400 -- 300 450 -- 200 360 -- -- 180 -- IC = 6A, VCE = 2V -- 8 15 IC = 0.1A, IB = 10mA -- 70 150 -- 130 200 DC Current Transfer Static Ratio (Note 8) Collector-Emitter Saturation Voltage (Note 8) hFE VCE(sat) Test Condition IC = 10mA, VCE = 2V -- IC = 100mA, VCE = 2V IC = 2A, VCE = 2V mV IC = 1A, IB = 10mA IC = 2.5A, IB = 50mA Base-Emitter Saturation Voltage (Note 8) VBE(sat) -- 0.89 1.0 V IC = 2.5A, IB = 50mA Base-Emitter Turn-on Voltage (Note 8) VBE(on) -- 0.79 -- V IC = 2.5A, VCE = 2V fT 100 140 -- MHz Cobo -- 23 30 pF VCB = 10V, f = 1MHz t(ON) -- 170 -- nS t(Off) -- 400 -- nS VCC = 10V, IC = 1A, IB1 = -IB2 = 10mA Transitional Frequency Output Capacitance Switching Time Note: IC = 50mA, VCE = 10V, f = 100MHz 8. Measured under pulsed conditions. Pulse width 300s. Duty cycle 2%. ZHB6718 Document number: DS33211 Rev. 4 - 2 5 of 10 www.diodes.com October 2015 (c) Diodes Incorporated ZHB6718 NPN - Typical Electrical Characteristics (@TA = +25C, unless otherwise specified.) ZHB6718 Document number: DS33211 Rev. 4 - 2 6 of 10 www.diodes.com October 2015 (c) Diodes Incorporated ZHB6718 PNP - Electrical Characteristics (@TA = +25C, unless otherwise specified.) Characteristic Symbol Min Typ Max Unit Test Condition Collector-Base Breakdown Voltage BVCBO -20 -65 -- V IC = -100A Collector-Emitter Breakdown Voltage (Note 9) BVCEO -20 -55 -- V IC = -10mA Emitter-Base Breakdown Voltage BVEBO -5 -8.8 -- V IE = -100A Collector Cutoff Current ICBO -- -- -0.1 A VCB = -15V Emitter Cutoff Current IEBO -- -- -0.1 A VEB = -4V 300 475 -- 300 450 -- 150 230 -- 35 70 -- IC = -4A, VCE = -2V IC = -6A, VCE = -2V DC Current Transfer Static Ratio (Note 9) Collector-Emitter Saturation Voltage (Note 9) Base-Emitter Saturation Voltage (Note 9) Base-Emitter Turn-on Voltage (Note 9) Transitional Frequency Output Capacitance Switching Time hFE IC = -100mA, VCE = -2V -- IC = -2A, VCE = -2V -- 30 -- -- -16 -40 -- -130 -200 -- -190 -260 VBE(sat) -- -0.98 -1.1 V IC = -2.5A, IB = -200mA VBE(on) -- -0.85 -- V IC = -2.5A, VCE = -2V fT 150 180 -- MHz Cobo -- 21 30 pF VCB = -10V, f = 1MHz nS VCC = -10V, IC = -1A, IB1 = -IB2 = -20mA VCE(sat) t(ON) -- t(OFF) Note: IC = -10mA, VCE = -2V 40 670 -- IC = -100mA, IB = -10mA mV IC = -1A, IB = -20mA IC = -2.5A, IB = -200mA nS IC = -50mA, VCE = -10V, f = 100MHz 9. Measured under pulsed conditions. Pulse width 300s. Duty cycle 2%. ZHB6718 Document number: DS33211 Rev. 4 - 2 7 of 10 www.diodes.com October 2015 (c) Diodes Incorporated ZHB6718 PNP - Typical Electrical Characteristics (@TA = +25C, unless otherwise specified.) ZHB6718 Document number: DS33211 Rev. 4 - 2 8 of 10 www.diodes.com October 2015 (c) Diodes Incorporated ZHB6718 Package Outline Dimensions Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version. A1 A Seating Plane D e1 L o E E1 o1 c e b SM-8 Dim Min Max Typ A -- 1.70 1.60 A1 0.02 0.10 0.04 b 0.70 0.90 0.80 c 0.24 0.32 0.28 D 6.30 6.70 6.60 e 1.53 REF e1 4.59 REF E 6.70 7.30 7.00 E1 3.30 3.70 3.50 L 0.75 1.00 0.90 O --45 O1 -15 -O2 --10 All Dimensions in mm o2 Suggested Pad Layout Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. Y Y1 X Note: Dimensions Value (in mm) C 1.52 C1 4.60 X 0.95 Y 2.80 Y1 6.80 C1 C For high voltage applications, the appropriate industry sector guidelines should be considered with regards to creepage and clearance distances between device terminals and PCB tracking. ZHB6718 Document number: DS33211 Rev. 4 - 2 9 of 10 www.diodes.com October 2015 (c) Diodes Incorporated ZHB6718 IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. 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LIFE SUPPORT Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright (c) 2015, Diodes Incorporated www.diodes.com ZHB6718 Document number: DS33211 Rev. 4 - 2 10 of 10 www.diodes.com October 2015 (c) Diodes Incorporated