2N7002K
Document number: DS30896 Rev. 15 - 2
1 of 6
www.diodes.com
August 2018
© Diodes Incorporated
2N7002K
NEW PROD UCT
N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
BVDSS
RDS(ON) Max
ID Max
TA = +25°C
60V
2GS = 10V
380mA
3GS = 5V
310mA
Description
This MOSFET has been designed to minimize the on-state resistance
(RDS(ON)) and yet maintain superior switching performance, making it
ideal for high efficiency power management applications.
Applications
Motor Control
Power Management Functions
Backlighting
Features and Benefits
Low On-Resistance
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
ESD Protected Up To 2kV
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
PPAP Capable (Note 4)
Mechanical Data
Case: SOT23
Case Material: Mo
Compound. UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish Matte Tin Annealed over Alloy 42
Leadframe. Solderable per MIL-STD-202, Method 208
Weight: 0.008 grams (Approximate)
Ordering Information (Note 5)
Part Number
Compliance
Case
Packaging
2N7002K-7
Standard
SOT23
3000/Tape & Reel
2N7002KQ-7
Automotive
SOT23
3000/Tape & Reel
2N7002K-13
Standard
SOT23
10000/Tape & Reel
2N7002KQ-13
Automotive
SOT23
10000/Tape & Reel
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant.
2. See https://www.diodes.com/quality/lead-of Halogen- and Antimony-free, "Green" and
Lead-free.
3. Halogen- and Antimony-
<1000ppm antimony compounds.
4. Automotive products are AEC-Q101 qualified and are PPAP capable. Automotive, AEC-Q101 and standard products are electrically and thermally
the same, except where specified. For more information, please refer to https://www.diodes.com/quality/.
5. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/.
Marking Information
Date Code Key
Year
2006
~
2018
2019
2020
2021
2022
2023
2024
2025
2026
2027
Code
T
~
F
G
H
I
J
K
L
M
N
O
Month
Jan
Feb
Mar
Apr
May
Jun
Jul
Aug
Sep
Oct
Nov
Dec
Code
1
2
3
4
5
6
7
8
9
O
N
D
K7K = Product Type Marking Code
YM or  M= Date Code Marking
Y  = Year (ex: F = 2018)
M = Month (ex: 9 = September)
SOT23
Top View
ESD protected up to 2kV
Top View
D
GS
Equivalent Circuit
Source
Gate
Protection
Diode
Gate
Drain
e3
2N7002K
Document number: DS30896 Rev. 15 - 2
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2N7002K
NEW PROD UC T
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Unit
Drain-Source Voltage
VDSS
60
V
Gate-Source Voltage
VGSS
±20
V
Continuous Drain Current (Note 7) VGS = 10V
Steady
State
TA = +25°C
TA = +70°C
ID
380
300
mA
t<5s
TA = +25°C
TA = +70°C
ID
430
340
mA
Continuous Drain Current (Note 7) VGS = 5V
Steady
State
TA = +25°C
TA = +70°C
ID
310
240
mA
t<5s
TA = +25°C
TA = +70°C
ID
350
270
mA
Maximum Continuous Body Diode Forward Current (Note 7)
IS
0.5
A
Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%) (Note 7)
IDM
1.2
A
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Unit
Total Power Dissipation (Note 6)
PD
370
mW
Thermal Resistance, Junction to Ambient (Note 6)
Steady State
RJA
357
°C/W
t<5s
292
Total Power Dissipation (Note 7)
PD
540
mW
Thermal Resistance, Junction to Ambient (Note 7)
Steady State
RJA
240
°C/W
t<5s
197
Thermal Resistance, Junction to Case (Note 7)
RJC
91
Operating and Storage Temperature Range
TJ, TSTG
-55 to +150
°C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
BVDSS
60
V
VGS = 0V, ID = 10µA
Zero Gate Voltage Drain Current
IDSS
1.0
µA
VDS = 60V, VGS = 0V
Gate-Source Leakage
IGSS
±10
µA
VGS = ±20V, VDS = 0V
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
VGS(TH)
1.0
1.6
2.5
V
VDS = 10V, ID = 1mA
Static Drain-Source On-Resistance
RDS(ON)
2.0
3.0
VGS = 10V, ID = 0.5A
VGS = 5V, ID = 0.05A
Forward Transfer Admittance
|Yfs|
80
ms
VDS =10V, ID = 0.2A
Diode Forward Voltage
VSD
0.75
1.1
V
VGS = 0V, IS = 115mA
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
Ciss
30
50
pF
VDS = 25V, VGS = 0V
f = 1.0MHz
Output Capacitance
Coss
4.2
25
pF
Reverse Transfer Capacitance
Crss
2.9
5.0
pF
Gate Resistance
Rg
133
f = 1MHz , VGS = 0V, VDS = 0V
Total Gate Charge
Qg
0.3
nC
VGS = 4.5V, VDS = 10V,
ID = 250mA
Gate-Source Charge
Qgs
0.2
nC
Gate-Drain Charge
Qgd
0.08
nC
Turn-On Delay Time
tD(ON)
3.9
ns
VDD = 30V, VGS = 10V,
RG = 25, ID = 200mA
Turn-On Rise Time
tR
3.4
ns
Turn-Off Delay Time
tD(OFF)
15.7
ns
Turn-Off Fall Time
tF
9.9
ns
Notes: 6. Device mounted on FR-4 PCB, with minimum recommended pad layout.
7. -4 PCB with high coverage 2oz. Copper, single sided.
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to product testing.
2N7002K
Document number: DS30896 Rev. 15 - 2
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© Diodes Incorporated
2N7002K
NEW PROD UC T
0
0.2
0.4
0.6
0.8
1.0
0 1 2 3 4 5
V , DRAIN-SOURCE VOLTAGE (V)
Fig. 1 Typical Output Characteristics
DS
I , DRAIN CURRENT (A)
D
V , GATE-SOURCE VOLTAGE (V)
Fig. 2 Typical Transfer Characteristics
GS
T , CHANNEL TEMPERATURE (
癈
)
Fig. 3 Gate Threshold Voltage vs. Channel Temperature
ch
0
0.5
1
1.5
2
-50 -25 0 25 50 75 100 125 150
0.1
I , DRAIN CURRENT (A)
Fig. 4 Static Drain-Source On-Resistance vs. Drain Current
D
1
10
1
I , DRAIN CURRENT (A)
Fig. 5 Static Drain-Source On-Resistance vs. Drain Current
D
10
0
V GATE SOURCE VOLTAGE (V)
GS
,
Fig. 6 Static Drain-Source On-Resistance vs. Gate-Source Voltage
(°C)
2N7002K
Document number: DS30896 Rev. 15 - 2
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2N7002K
NEW PROD UC T
0
T , CHANNEL TEMPERATURE ( C)
Fig. 7
CH °
Static Drain-Source On-State Resistance
vs. Channel Temperature
I , REVERSE DRAIN CURRENT (A)
DR
1
I , REVERSE DRAIN CURRENT (A)
DR
1
I , DRAIN CURRENT (A)
D
Fig.10 Forward Transfer Admittance vs. Drain Current
|Y |, FORWARD TRANSFER ADMITTANCE (S)
fs
0.001
0.01
0.1
1
0.1 1 10 100
Fig. 11 Safe Operation Area
V , DRAIN-SOURCE VOLTAGE (V)
DS
I , DRAIN CURRENT (A)
D
R
Limited
DS(on)
T = 150
癈
T = 25
癈
Single Pulse
J(max)
A
DC
P = 10s
W
P = 1s
W
P = 100ms
WP = 10ms
WP = 1ms
W
P = 100
祍
W
P = 10 s
Wµ
0
1
2
3
4
5
6
7
8
9
10
t1, PULSE DURATION TIME (sec)
Fig. 12 Single Pulse Maximum Power Dissipation
0.001 0.01 0.1 1 10 100 1,0000.0001
Single Pulse
R = 240 C/W
R = r * R
T - T = P * R

JA
JA(t) (t) JA
J A JA(t)
P , PEAK TRANSIENT POIWER (W)
(PK)
150°C
25°C
100µs
P(PK), PEAK TRANSIENT POWER (W)
2N7002K
Document number: DS30896 Rev. 15 - 2
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2N7002K
NEW PROD UC T
Package Outline Dimensions
Please see http://www.diodes.com/package-outlines.html for the latest version.
SOT23
Suggested Pad Layout
Please see http://www.diodes.com/package-outlines.html for the latest version.
SOT23
0.000001 0.0001 0.001 0.01 0.1 1 10 100 1,000
t1, PULSE DURATION TIME (sec)
Fig. 13 Transient Thermal Resistance
0.00001
0.001
0.01
0.1
1
r(t), TRANSIENT THERMAL RESISTANCE
R = r * R
JA(t) (t)
JA
JA
R = 240 C/W
Duty Cycle, D = t1/t2
D = 0.5
D = 0.7
D = 0.9
D = 0.3
D = 0.1
D = 0.05
D = 0.02
D = 0.01
D = 0.005
D = Single Pulse
SOT23
Dim
Min
Max
Typ
A
0.37
0.51
0.40
B
1.20
1.40
1.30
C
2.30
2.50
2.40
D
0.89
1.03
0.915
F
0.45
0.60
0.535
G
1.78
2.05
1.83
H
2.80
3.00
2.90
J
0.013
0.10
0.05
K
0.890
1.00
0.975
K1
0.903
1.10
1.025
L
0.45
0.61
0.55
L1
0.25
0.55
0.40
M
0.085
0.150
0.110
a
0°
8°
--
All Dimensions in mm
Dimensions
Value (in mm)
C
2.0
X
0.8
X1
1.35
Y
0.9
Y1
2.9
J
K1 K
L1
GAUGE PLANE
0.25
H
L
M
All 7°
A
CB
D
G
F
a
X
Y
Y1 C
X1
2N7002K
Document number: DS30896 Rev. 15 - 2
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2N7002K
NEW PROD UC T
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