2N7002K N-CHANNEL ENHANCEMENT MODE MOSFET NEW PRODUCT Product Summary Features and Benefits BVDSS RDS(ON) Max 60V 2 @ VGS = 10V 3 @ VGS = 5V ID Max TA = +25C 380mA 310mA Description This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Motor Control Power Management Functions Backlighting Low On-Resistance Low Input Capacitance Fast Switching Speed Low Input/Output Leakage ESD Protected Up To 2kV Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. "Green" Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability PPAP Capable (Note 4) Mechanical Data Applications Case: SOT23 Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish Matte Tin Annealed over Alloy 42 Leadframe. Solderable per MIL-STD-202, Method 208 e3 Weight: 0.008 grams (Approximate) Drain SOT23 D Gate Top View S G Gate Protection Diode ESD protected up to 2kV Source Top View Equivalent Circuit Ordering Information (Note 5) Part Number 2N7002K-7 2N7002KQ-7 2N7002K-13 2N7002KQ-13 Notes: Compliance Standard Automotive Standard Automotive Case SOT23 SOT23 SOT23 SOT23 Packaging 3000/Tape & Reel 3000/Tape & Reel 10000/Tape & Reel 10000/Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated's definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green" products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. Automotive products are AEC-Q101 qualified and are PPAP capable. Automotive, AEC-Q101 and standard products are electrically and thermally the same, except where specified. For more information, please refer to https://www.diodes.com/quality/. 5. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/. Marking Information K7K = Product Type Marking Code YM or M= Date Code Marking Y or = Year (ex: F = 2018) M = Month (ex: 9 = September) Date Code Key Year 2006 Code T Month Code Jan 1 ~ ~ 2018 F 2019 G 2020 H 2021 I 2022 J 2023 K 2024 L 2025 M 2026 N 2027 O Feb 2 Mar 3 Apr 4 May 5 Jun 6 Jul 7 Aug 8 Sep 9 Oct O Nov N Dec D 2N7002K Document number: DS30896 Rev. 15 - 2 1 of 6 www.diodes.com August 2018 (c) Diodes Incorporated 2N7002K Maximum Ratings (@TA = +25C, unless otherwise specified.) Characteristic Symbol VDSS VGSS NEW PRODUCT Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note 7) VGS = 10V Steady State t<5s Continuous Drain Current (Note 7) VGS = 5V Steady State t<5s TA = +25C TA = +70C TA = +25C TA = +70C TA = +25C TA = +70C TA = +25C TA = +70C ID Value 60 20 380 300 ID 430 340 mA ID 310 240 mA mA 350 270 0.5 1.2 ID Maximum Continuous Body Diode Forward Current (Note 7) Pulsed Drain Current (10s Pulse, Duty Cycle = 1%) (Note 7) Unit V V IS IDM mA A A Thermal Characteristics (@TA = +25C, unless otherwise specified.) Characteristic Symbol PD Total Power Dissipation (Note 6) Thermal Resistance, Junction to Ambient (Note 6) Steady State t<5s RJA Total Power Dissipation (Note 7) PD Thermal Resistance, Junction to Ambient (Note 7) Steady State t<5s RJA Thermal Resistance, Junction to Case (Note 7) Operating and Storage Temperature Range Electrical Characteristics RJC TJ, TSTG Unit mW C/W mW C/W C (@TA = +25C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 8) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS (Note 8) Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transfer Admittance Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 9) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Notes: Value 370 357 292 540 240 197 91 -55 to +150 Symbol Min Typ Max Unit BVDSS IDSS IGSS 60 -- -- -- -- -- -- 1.0 10 V A A VGS = 0V, ID = 10A VDS = 60V, VGS = 0V VGS = 20V, VDS = 0V VGS(TH) 1.0 2.5 V 2.0 3.0 VDS = 10V, ID = 1mA VGS = 10V, ID = 0.5A VGS = 5V, ID = 0.05A VDS =10V, ID = 0.2A VGS = 0V, IS = 115mA RDS(ON) -- 1.6 -- -- |Yfs| VSD 80 -- -- 0.75 -- 1.1 ms V Ciss Coss Crss Rg Qg Qgs Qgd tD(ON) tR tD(OFF) tF -- -- -- -- -- -- -- -- -- -- -- 30 4.2 2.9 133 0.3 0.2 0.08 3.9 3.4 15.7 9.9 50 25 5.0 -- -- -- -- -- -- -- -- pF pF pF nC nC nC ns ns ns ns Test Condition VDS = 25V, VGS = 0V f = 1.0MHz f = 1MHz , VGS = 0V, VDS = 0V VGS = 4.5V, VDS = 10V, ID = 250mA VDD = 30V, VGS = 10V, RG = 25, ID = 200mA 6. Device mounted on FR-4 PCB, with minimum recommended pad layout. 7. Device mounted on 1" x 1" FR-4 PCB with high coverage 2oz. Copper, single sided. 8. Short duration pulse test used to minimize self-heating effect. 9. Guaranteed by design. Not subject to product testing. 2N7002K Document number: DS30896 Rev. 15 - 2 2 of 6 www.diodes.com August 2018 (c) Diodes Incorporated ID, DRAIN CURRENT (A) NEW PRODUCT 2N7002K 1.0 0.8 0.6 0.4 0.2 0 0 1 2 3 4 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 1 Typical Output Characteristics 5 VGS, GATE-SOURCE VOLTAGE (V) Fig. 2 Typical Transfer Characteristics 2 10 1.5 1 1 0.5 0.1 0 -50 75 100 125 150 -25 0 25 50 Tch, CHANNEL TEMPERATURE ( ( C)) Fig. 3 Gate Threshold Voltage vs. Channel Temperature ID, DRAIN CURRENT (A) Fig. 4 Static Drain-Source On-Resistance vs. Drain Current 10 0 1 ID, DRAIN CURRENT (A) Fig. 5 Static Drain-Source On-Resistance vs. Drain Current 2N7002K Document number: DS30896 Rev. 15 - 2 VGS, GATE SOURCE VOLTAGE (V) Fig. 6 Static Drain-Source On-Resistance vs. Gate-Source Voltage 3 of 6 www.diodes.com August 2018 (c) Diodes Incorporated NEW PRODUCT IDR, REVERSE DRAIN CURRENT (A) 2N7002K 0 IDR, REVERSE DRAIN CURRENT (A) |Yfs|, FORWARD TRANSFER ADMITTANCE (S) TCH, CHANNEL TEMPERATURE (C) Fig. 7 Static Drain-Source On-State Resistance vs. Channel Temperature 1 ID, DRAIN CURRENT (A) Fig.10 Forward Transfer Admittance vs. Drain Current 1 1 10 PEAKTRANSIENT TRANSIENTPOWER POIWER(W) (W) PP(PK) (PK),,PEAK ID, DRAIN CURRENT (A) RDS(on) Limited DC 0.1 PW = 10s PW = 1s PW = 100ms PW = 10ms PW = 1ms 0.01 PW = 100 100s PW = 10s 150C TJ(max) = 150 TA = 25 25C Single Pulse 0.001 0.1 1 10 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 11 Safe Operation Area 2N7002K Document number: DS30896 Rev. 15 - 2 100 9 8 7 Single Pulse RJA = 240C/W RJA(t) = r(t) * RJA TJ - TA = P * RJA(t) 6 5 4 3 2 1 0 0.0001 0.001 0.01 0.1 1 10 100 1,000 t1, PULSE DURATION TIME (sec) Fig. 12 Single Pulse Maximum Power Dissipation 4 of 6 www.diodes.com August 2018 (c) Diodes Incorporated 2N7002K NEW PRODUCT r(t), TRANSIENT THERMAL RESISTANCE 1 D = 0.9 D = 0.7 D = 0.5 D = 0.3 0.1 D = 0.1 D = 0.05 D = 0.02 0.01 D = 0.01 D = 0.005 RJA(t) = r(t) * RJA RJA = 240C/W Duty Cycle, D = t1/t2 D = Single Pulse 0.001 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 t1, PULSE DURATION TIME (sec) Fig. 13 Transient Thermal Resistance 10 100 1,000 Package Outline Dimensions Please see http://www.diodes.com/package-outlines.html for the latest version. SOT23 All 7 H K1 J K SOT23 Dim Min Max Typ A 0.37 0.51 0.40 B 1.20 1.40 1.30 C 2.30 2.50 2.40 D 0.89 1.03 0.915 F 0.45 0.60 0.535 G 1.78 2.05 1.83 H 2.80 3.00 2.90 J 0.013 0.10 0.05 K 0.890 1.00 0.975 K1 0.903 1.10 1.025 L 0.45 0.61 0.55 L1 0.25 0.55 0.40 M 0.085 0.150 0.110 a 0 8 -All Dimensions in mm GAUGE PLANE 0.25 a M A L C L1 B D F G Suggested Pad Layout Please see http://www.diodes.com/package-outlines.html for the latest version. SOT23 Y C Y1 X 2N7002K Document number: DS30896 Rev. 15 - 2 Dimensions C X X1 Y Y1 Value (in mm) 2.0 0.8 1.35 0.9 2.9 X1 5 of 6 www.diodes.com August 2018 (c) Diodes Incorporated 2N7002K IMPORTANT NOTICE NEW PRODUCT DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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