MMBT3904 SOT-23 BIPOLAR TRANSISTORS TRANSISTOR(NPN) FEATURES * Power dissipation PCM 0.2 W(Tamb=25OC) * Collector current ICM 0.2 A * Collector-base voltage V(BR)CBO: 60 V * Operating and storage junction temperature range TJ,Tstg: -55OCto+150OC SOT-23 COLLECTOR 3 MECHANICAL DATA * * * * * Case: Molded plastic Epoxy: UL 94V-O rate flame retardant Lead: MIL-STD-202E method 208C guaranteed Mounting position: Any Weight: 0.008 gram 1 BASE 0.055(1.40) 0.047(1.20) 2 EMITTER 0.006(0.15) 0.003(0.08) 0.043(1.10) 0.035(0.90) 0.020(0.50) 0.012(0.30) 0.004(0.10) 0.000(0.00) 0.100(2.55) 0.089(2.25) 0.020(0.50) 0.012(0.30) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS 0.019(2.00) 0.071(1.80) Ratings at 25 o C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. 1 0.118(3.00) 3 0.110(2.80) 2 For capacitive load, derate current by 20%. Dimensions in inches and (millimeters) o MAXIMUM RATINGES ( @ TA = 25 C unless otherwise noted ) RATINGS SYMBOL VALUE UNITS O Max. Steady State Power Dissipation (1) @TA=25oC Derate above 25 C PD 300 mW Max. Operating Temperature Range TJ 150 o C -55 to +150 o C Storage Temperature Range TSTG ELECTRICAL CHARACTERISTICS ( @ TA = 25oC unless otherwise noted ) CHARACTERISTICS Thermal Resistance Junction to Ambient Notes : 1.Alumina=0.4*0.3*0.024in.99.5% alumina 2." Fully ROHS Compliant "," 100% Sn plating (Pb-free)". SYMBOL MIN. TYP. MAX. R qJA - - 417 UNITS o C/W 2007-5 ELECTRICAL CHARACTERISTICS (@TA=25OC unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage (I C = 1mAdc, I B = 0) V(BR)CEO 40 - Vdc Collector-Base Breakdown Voltage (I C = 10uAdc, I E = 0) V(BR)CBO 60 - Vdc Emitter-Base Breakdown Voltage (I E = 100uAdc, I C = 0) V(BR)EBO 6.0 - Vdc IBL - 50 nAdc ICEX - 50 nAdc DC Current Gain (I C = 0.1mAdc, V CE = 1.0Vdc) 40 - (I C = 1.0mAdc, V CE = 1.0Vdc) 70 - Base Cutoff Current (V CE = 30Vdc, V EB = 3.0Vdc) Collector Cutoff Current (V CE = 30Vdc, V EB = 3.0Vdc) ON CHARACTERISTICS(1) (I C = 10mAdc, V CE = 1.0Vdc) hFE 100 300 (I C = 50mAdc, V CE = 1.0Vdc) 60 - (I C = 100mAdc, V CE = 1.0Vdc) 30 - - 0.2 - 0.3 0.65 0.85 - 0.95 fT 300 - MHz Output Capacitance (V CB = 5.0Vdc, I E = 0, f= 1.0MHz) Cobo - 4.0 pF Input Capacitance (V EB = 0.5Vdc, I C = 0, f= 1.0MHz) Cibo - 8.0 pF Input lmpedance (V CE = 10Vdc, I C = 1.0mAdc, f= 1.0kHz) hie 1.0 10 kohms Voltage Feedback Ratio (V CE = 10Vdc, I C = 1.0mAdc, f= 1.0kHz) hre 0.5 8.0 X 10 -4 Small-Signal Current Gain (V CE = 10Vdc, I C = 1.0mAdc, f= 1.0kHz) hfe 100 400 - Output Admittance (V CE = 10Vdc, I C = 1.0mAdc, f= 1.0kHz) hoe 1.0 40 umhos Noise Figure (V CE = 5.0Vdc, I C = 100uAdc, R S = 1.0kohms, f= 1.0kHz) NF - 5.0 dB td - 35 tr - 35 ts - 200 tf - 50 Collector-Emitter Saturation Voltage (I C = 10mAdc, I B = 1.0mAdc) (I C = 50mAdc, I B = 5.0mAdc) Base-Emitter Saturation Voltage (I C = 10mAdc, I B = 1.0mAdc) (I C = 50mAdc, I B = 5.0mAdc) VCE(sat) VBE(sat) - Vdc Vdc SMALL-SIGNAL CHARACTERISTICS Current-Gain-Bandwidth Product (I C = 10mAdc, V CE = 20Vdc, f= 100MHz) SWITCHING CHARACTERISTICS Delay Time Rise Time Storage Time Fall Time (V CC = 3.0Vdc, V BE = -0.5Vdc, I C = 10mAdc, I B1 = 1.0mAdc) (V CC = 3.0Vdc, I C = 10mAdc, I B1 = I B2 = 1.0mAdc) <300ms,Duty Cycle<2.0% Note : Pulse Test: Pulse Width- ns ns RATING AND CHARACTERISTICS CURVES ( MMBT3904 ) - TJ= 25 C O -- 10 VCC=40V IC=IB =10 3000 2000 5.0 Q, CHARGE (pC) CAPACITANCE (PF) O 5000 7.0 Cibo 3.0 Cobo 2.0 1.0 TJ=125 C 0.1 0.2 0.3 0.5 0.7 1.0 500 QT 300 200 100 70 50 20 30 40 2.0 3.0 5.0 7.0 10 1000 700 QA 1.0 2.0 3.0 REVERSE BIAS VOLTAGE ( V) 40V 15V 10 5.0 7.0 10 20 30 50 70 100 300 200 IC/IB =20 50 30 20 7 5 200 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 3. Turn-On Time Figure 4. Rise Time IC/IB =10 IC/IB =10 30 20 VCC=40V IB1=IB2 300 200 IC/IB =20 50 200 500 t's=ts-1/8tf IB1=IB2 100 70 IC/IB =20 100 70 50 IC/IB =10 30 20 10 10 7 5 100 70 10 2.0V td@VOB=0 V 500 t's, STORAGE TIME (ns) tr, RISE TIME (ns) 30 20 tf, FALL TIME (ns) TIME (ns) 50 2.0 3.0 200 VCC=40V IC=IB=10 300 200 tr@VCC=3.0V 1.0 50 70 100 500 IC/IB =10 300 200 7 5 20 30 Figure 2. Charge Data Figure 1. Capacitance 500 100 70 5.0 7.0 10 IC, COLLECTOR CURRENT (mA) 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 7 5 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 5. Storage Time Figure 6. Fall Time 200 RATING AND CHARACTERISTICS CURVES ( MMBT3904 ) 10 SOURCE RESISTANCE=200W IC=0.5mA 8 6 SOURCE RESISTANCE=1.0k IC= 50uA 4 2 0 0.1 14 SOURCE RESISTANCE=200W IC=1.0mA NF, NOISE FIGURE (dB) NF, NOISE FIGURE (dB) 12 SOURCE RESISTANCE=500W IC= 100uA 0.2 0.4 1.0 2.0 f = 1.0 kHz I =1.0mA C 12 IC=0.5mA 10 IC= 100uA 6 4 2 4.0 10 20 40 0 100 0.1 f, FREQUENCY (KHz) 0.2 0.4 1.0 Figure 7. hoe, OUTPUT ADMITTANCE (umhos) hfe, CURRENT GAIN 100 70 50 0.5 1.0 2.0 3.0 5.0 40 100 5.0 10 20 50 20 10 5 2 0.1 0.2 0.3 0.5 1.0 2.0 3.0 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT(mA) Figure 9. Current Gain Figure 10. Output Admittance hre, VOLTAGE FEEDBACK RATIO (X 10-4) hie, INPUT IMPEDANCE (KOHMS) 10 100 1 10 20 10 5.0 2.0 1.0 0.5 0.2 0.1 4.0 Figure 8. 200 0.2 0.3 2.0 RS, SOURCE RESISTANCE (KOHMS) 300 30 0.1 IC= 50uA 8 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 10 7.0 5.0 3.0 2.0 1.0 0.7 0.5 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 11. Input Impedance Figure 12.Voltage Feedback Ratio 10 hFE, DC CURRENT GAIN (NORMALIZED) RATING AND CHARACTERISTICS CURVES ( MMBT3904 ) 2.0 TJ=+125OC VCE =1.0V +25OC 1.0 0.7 -55OC 0.5 0.3 0.2 0.1 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 IC, COLLECTOR CURRENT (mA) VCE, COLLECTOR EMITTER VOLTAGE (V) Figure 13.DC Current Gain 1.0 TJ=25OC 0.8 IC=1.0 mA 10 mA 30 mA 100 mA 0.6 0.4 0.2 0 0.01 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 IB, BASE CURRENT (mA) Figure 14.Collector Saturation Region 1.0 TJ=25OC VBE (sat) @ IC/IB=10 V, VOLTAGE (V) 1.0 0.8 VBE @ VCE=1.0V 0.6 0.4 VCE (sat) @ IC/IB=10 1.0 O 2.0 5.0 10 20 50 100 200 O +25 C TO+125 C 0.5 qVC FOR VCE(sat) 0 O O O O -55 C TO+25 C -0.5 -55 C TO+25 C -1.0 O -2.0 0 20 40 60 80 O +25 C TO+125 C qVB FOR VBE(sat) -1.5 0.2 0 COEFFICIENT (mV/OC) 1.2 100 120 140 160 180 200 IC,COLLECTOR CURRENT(mA) IC, COLLECTOR CURRENT (mA) Figure 15."ON" Voltages Figure 16.Temperature Coefficients DISCLAIMER NOTICE Rectron Inc reserves the right to make changes without notice to any product specification herein, to make corrections, modifications, enhancements or other changes. 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