IRL3103D1S
PD- 9.1558A
4/2/98
Description
The FETKY family of co-packaged HEXFET power
MOSFETs and Schottky Diodes offer the designer an
innovative board space saving solution for switching
regulator applications. A low on resistance Gen 5 MOSFET
with a low forward voltage drop Schottky diode and
minimized component interconnect inductance and
resistance result in maximized converter efficiencies.
The D2Pak is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the
highest power capability and the lowest possible on-
resistance in any existing surface mount package. The
D2Pak is suitable for high current applications because
of its low internal connection resistance and can dissipate
up to 2.0W in a typical surface mount application.
FETKYTM MOSFET & SCHOTTKY RECTIFIER
Parameter Typ. Max. Units
RθJC Junction-to-Case ––– 1.4
RθJA Junction-to-Ambient ( PCB Mounted,steady-state)** ––– 4 0 °C/W
Thermal Resistance
G
D
S
2
D P a k
TO-262
lCo-packaged HEXFET® Power MOSFET
and Schottky Diode
lGeneration 5 Technology
lLogic Level Gate Drive
lMinimize Circuit Inductance
lIdeal For Synchronous Regulator Application
Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V64
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V45 A
IDM Pulsed Drain Current 220
PD @TA = 25°C Power Dissipation 3.1 W
PD @TC = 25°C Power Dissipation 89 W
Linear Derating Factor 0.56 W/°C
VGS Gate-to-Source Voltage ± 16 V
TJOperating Junction and -55 to + 150
TSTG Storage Temperature Range °C
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Absolute Maximum Ratings
VDSS = 30V
RDS(on) = 0.014Ω
ID = 64A
IRL3103D1S
Parameter Min. Typ. Max. Units Conditions
IF (AV) ( Schottky) MOSFET symbol
showing the
ISM Pulsed Source Current integral reverse
(Body Diode)
––– ––– p-n junction and Schottky diode.
VSD1 Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C, IS = 32A, VGS = 0V
VSD2 Diode Forward Voltage ––– ––– 0.50 V TJ = 25°C, IS = 1.0A, VGS = 0V
trr Reverse Recovery Time ––– 51 77 n s TJ = 25°C, IF = 32A
Qrr Reverse Recovery Charge ––– 49 73 nC di/dt = 100A/µs
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 10 )
Notes:
Pulse width ≤ 300µs; duty cycle ≤ 2%.
Uses IRL3103D1 data and test conditions
Body Diode & Schottky Diode Ratings and Characteristics
2.0
220 A
––––––
G
D
S
** When mounted on 1" square PCB ( FR-4 or G-10 Material ).
For recommended footprint and soldering techniques refer
to application note #AN-994.
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 30 ––– ––– V VGS = 0V, ID = 250µA
∆V(BR)DSS/∆TJBreakdown Voltage Temp. Coefficient ––– 0.037 ––– V/°C Reference to 25°C, ID = 1mA
––– ––– 0.014 VGS = 10V, ID = 34A
––– ––– 0.019 ΩVGS = 4.5V, ID = 28A
VGS(th) Gate Threshold Voltage 1 .0 ––– – –– V VDS = VGS, ID = 250µA
gfs Forward Transconductance 23 ––– ––– S VDS = 25V, ID = 34A
––– ––– 0.10 mA VDS = 30V, VGS = 0V
––– ––– 22 VDS = 24V, VGS = 0V, TJ = 125°C
Gate-to-Source Forward Leakage ––– ––– 100 nA VGS = 16V
Gate-to-Source Reverse Leakage ––– ––– -100 VGS = -16V
QgTotal Gate Charge ––– ––– 43 ID = 32A
Qgs Gate-to-Source Charge ––– ––– 14 nC VDS = 24V
Qgd Gate-to-Drain ("Miller") Charge ––– ––– 23 VGS = 4.5V, See Fig. 6
td(on) Turn-On Delay Time ––– 9.0 ––– VDD = 15V
trRise Time ––– 210 ––– ns ID = 32A
td(off) Turn-Off Delay Time ––– 20 ––– RG = 3.4 Ω, VGS =4.5V
tfFall Time ––– 54 ––– RD = 0.43 Ω,
Between lead,
and center of die contact
Ciss Input Capacitance ––– 1900 ––– VGS = 0V
Coss Output Capacitance ––– 810 ––– VDS = 25V
Crss Reverse Transfer Capacitance ––– 240 ––– ƒ = 1.0MHz, See Fig. 5
Ciss Input Capacitance ––– 3500 ––– VGS = 0V, VDS = 0V
MOSFET Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
RDS(on) Static Drain-to-Source On-Resistance
IGSS
nH
LSInternal Source Inductance ––– 7.5 –––
IDSS Drain-to-Source Leakage Current
IRL3103D1S
Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics
1
10
100
1000
0.1 1 10 100
I , Drain-to-Source Current (A)
D
V , Dra in-t o-So u rc e V o lta
g
e
(
V
)
DS
A
20
µ
s PU LSE WIDTH
T = 25°C
J
VGS
TOP 15V
1 2V
1 0V
8 .0V
6 .0V
4 .0V
3 .0V
BOTTOM 2.5V
2.5V
Fig 3. Typical Reverse Output Characteristics Fig 4. Typical Reverse Output Characteristics
1
10
100
1000
0.1 1 10 100
I , Drain-to-Source Current (A)
D
V , Drain-to-Source Volta
g
e
(
V
)
DS
A
VGS
TOP 15V
12V
10V
8.0V
6.0V
4.0V
3.0V
BOTTOM 2.5V
2.5V
20
µ
s PULSE WIDTH
T = 150°C
J
0
10
20
30
0 0.2 0.4 0.6 0.8
20
µ
s PULSE WIDTH
T = 150°C
A
J
0.0V
VGS
TOP 10V
8.0V
6.0V
4.0V
2.0V
BOTTOM 0.0V
V , Source-to-Drain Volta
g
e
(
V
)
I , Source-to-Drain Current (A)
S
SD
0
10
20
30
0.0 0.2 0.4 0.6 0.8 1.0
20
µ
s PULSE WIDTH
T = 25°C
A
I , Source-to-Drain Current (A)
V , Source-to-Drain Volta
g
e
(
V
)
0.0V
S
VGS B
TOP 10V
8.0V
6.0V
4.0V
2.0V
BOTTOM 0.0V
J
SD
IRL3103D1S
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 7. Maximum Drain Current Vs.
Case Temperature Fig 8. Typical Transfer Characteristics
1
10
100
1000
2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0
T = 25°C
T = 150°C
J
J
GS
V , Gate-to-Source Volta
g
e (V)
D
I , Drain-to-Source Current (A)
A
V = 15V
20µs PULSE WIDTH
DS
1 10 100
0
1000
2000
3000
4000
V , Drain-to-Source Volta
g
e (V)
C, Capacitance (pF)
DS
V
C
C
C
=
=
=
=
0V,
C
C
C
f = 1MHz
+ C
+ C
C SHORTED
GS
iss
g
s
g
d , ds
rss
g
d
oss ds
g
d
Ciss
Coss
Crss
020 40 60 80
0
3
6
9
12
15
Q , Total Gate Char
g
e (nC)
V , Gate-to-Source Voltage (V)
G
GS
I =
D32A
V = 15V
DS
V = 24V
DS
25 50 75 100 125 150 175
0
10
20
30
40
50
60
70
T , Case Temperature ( C)
I , Drain Current (A)
°
C
D
IRL3103D1S
Fig 10. Maximum Effective Transient Thermal Impedance, Junction-to-Case
0.01
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1 1
t , R e ctan
g
ular Pulse Duration (sec)
1
thJC
D = 0.50
0.01
0.02
0.05
0.10
0.20
S ING LE P ULS E
(THERMAL RESPONSE)
A
T h er m a l R es pon se (Z )
P
t
2
1
t
DM
N o tes:
1 . D u ty fa cto r D = t / t
2. P e a k T = P x Z + T
12
J
DM thJC
C
Fig 9. Normalized On-Resistance
Vs. Temperature
0.0
0.5
1.0
1.5
2.0
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
J
T , J u nc tio n T emp eratur e (°C )
R , Dra in-to -So urc e O n Re s is ta nc e
DS(on)
(Normalized)
V = 1 0V
GS
A
I = 5 6A
D
IRL3103D1S
D2Pak
Part Marking Information
10.16 (.400)
R EF.
6.47 (.255 )
6.18 (.243 )
2.61 (.103)
2.32 (.091)
8.89 (.350)
REF .
- B -
1.32 (.052)
1.22 (.048)
2.79 (.110)
2.29 (.090)
1.39 (.055)
1.14 (.045)
5 .28 (.208)
4 .78 (.188)
4.69 (.185)
4.20 (.165)
10.54 (.415)
10.29 (.405)
- A -
2
1 3 15 .4 9 (.6 10)
14 .7 3 (.5 80)
3X 0.93 (.037)
0.69 (.027)
5 .08 (.200)
3X 1.40 (.055)
1.14 (.045)
1.78 (.070)
1.27 (.050)
1.40 (.055)
MAX.
NOTES:
1 DIM ENSIONS AFTER SOLDER DIP.
2 DIM ENSIONING & TOLERANCING PER ANSI Y14.5M, 1982.
3 CONTROLLING DIMENSION : INCH.
4 HEATSINK & LEAD DIMENSIONS DO NOT INCLUDE BURRS.
0.55 (.022)
0.46 (.018)
0.25 ( .0 10 ) M B A M MINIMUM RECOMMENDED FOOTPRINT
11.43 (.450)
8.89 (.350)
17 .78 (.700)
3.81 (.150)
2.08 (.082)
2X
LEAD ASSIGNMENTS
1 - G AT E
2 - D RAIN
3 - S OUR CE
2.54 (.100)
2X
PAR T N UM BER
INTERNATIONAL
RE CTIFIE R
LOG O DATE CODE
(YYW W )
YY = YEAR
WW = WEEK
A S SEMBLY
LOT C O DE
F530S
9B 1M
9246
A
D2Pak Package Outline
IRL3103D1S
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331
EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020
IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111
IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086
IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371
http://www.irf.com/ Data and specifications subject to change without notice. 4/98
3
4
4
TRR
FEED DIRECTION
1.85 (.073)
1.65 (.065)
1.60 (.063)
1.50 (.059)
4.10 (.161)
3.90 (.153)
TRL
FE ED D IRE CTION
10 .9 0 (.429)
10 .7 0 (.421) 16.10 (.634)
15.90 (.626)
1.75 (.069)
1.25 (.049)
11.60 (.457)
11.40 (.449) 15.42 (.609)
15.22 (.601)
4.72 (.136)
4.52 (.178)
24.30 (.957)
23.90 (.941)
0.3 68 (.0145)
0.3 42 (.0135)
1 .60 (.063)
1 .50 (.059)
13.50 (.532)
12.80 (.504)
330.00
(14.173)
MAX.
2 7.4 0 ( 1.079)
2 3.9 0 ( .941)
60.00 (2.362)
M IN .
3 0.40 (1.1 97)
M A X .
26.40 ( 1 .0 39)
24 .40 ( .961 )
NOT ES :
1. CO M F O RM S TO E IA -418.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSIO N MEASURED @ HU B.
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
Tape & Reel Information
D2Pak
