Rev.9.00 Sep 07, 2005 page 1 of 8
2SK3070(L), 2SK3070(S)
Silicon N Channel MOS FET
High Speed Power Switching REJ03G1063-0900
(Previous: ADE-208-684G)
Rev.9.00
Sep 07, 2005
Features
• Low on-resistance
RDS(on) =4.5 mΩ typ.
• Low drive current
• 4 V gate drive device can be driven from 5 V source
Outline
RENESAS Package code: PRSS0004AE-A
(Package name: LDPAK(L))
1. Gate
2. Drain
3. Source
4. Drain
RENESAS Package code: PRSS0004AE-B
(Package name: LDPAK(S)-(1))
G
D
S
123
4
123
4
2SK3070(L), 2SK3070(S)
Rev.9.00 Sep 07, 2005 page 2 of 8
Absolute Maximum Ratings
(Ta = 25°C)
Item Symbol Ratings Unit
Drain to source voltage VDSS 40 V
Gate to source voltage VGSS ±20 V
Drain current ID 75 A
Drain peak current ID(pulse) Note1 300 A
Body-drain diode reverse drain current IDR 75 A
Avalanche current IAP Note3 50 A
Avalanche energy EAR Note3 333 mJ
Channel dissipation Pch Note2 100 W
Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C
Notes: 1. PW ≤ 10µs, duty cycle ≤ 1 %
2. Value at Tc = 25°C
3. Value at Tch = 25°C, Rg ≥ 50 Ω
Electrical Characteristics
(Ta = 25°C)
Item Symbol Min Typ Max Unit Test Conditions
Drain to source breakdown voltage V(BR)DSS 40 — — V ID = 10 mA, VGS = 0
Gate to source leak current IGSS — — ±0.1 µA VGS = ±20 V, VDS = 0
Zero gate voltage drain current IDSS — — 10 µA VDS = 40 V, VGS = 0
Gate to source cutoff voltage VGS(off) 1.0 — 2.5 V ID = 1 mA, VDS = 10 V Note4
— 4.5 5.8 mΩ I
D = 40 A, VGS = 10 V Note4
Static drain to source on state
resistance RDS(on) — 6.5 10 mΩ I
D = 40 A, VGS = 4 V Note4
Forward transfer admittance |yfs| 50 80 — S ID = 40 A, VDS = 10 V Note4
Input capacitance Ciss — 6800 — pF
Output capacitance Coss — 1300 — pF
Reverse transfer capacitance Crss — 380 — pF
VDS = 10 V, VGS = 0,
f = 1 MHz
Total gate charge Qg — 130 — nC
Gate to source charge Qgs — 25 — nC
Gate to drain charge Qgd — 30 — nC
VDD = 25 V, VGS = 10 V,
ID = 75 A
Turn-on delay time td(on) — 60 — ns
Rise time tr — 300 — ns
Turn-off delay time td(off) — 550 — ns
Fall time tf — 400 — ns
VGS = 10 V, ID = 40 A,
RL = 0.75 Ω
Body–drain diode forward voltage VDF — 1.05 — V IF = 75 A, VGS = 0
Body–drain diode reverse recovery
time trr — 90 — ns
IF = 75 A, VGS = 0
diF/ dt = 50 A/ µs
Note: 4. Pulse test
2SK3070(L), 2SK3070(S)
Rev.9.00 Sep 07, 2005 page 3 of 8
Main Characteristics
Power vs. Temperature Derating
Channel Dissipation Pch (W)
Case Temperature TC (°C)
Maximum Safe Operation Area
Drain to Source Voltage VDS (V)
Drain Current ID (A)
Typical Output Characteristics
Drain Current ID (A)
Drain to Source Voltage VDS (V)
Typical Transfer Characteristics
Gate to Source Voltage VGS (V)
Drain Current ID (A)
Gate to Source Voltage VGS (V)
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
Drain to Source Saturation Voltage
VDS (on) (V)
Drain Current ID (A)
Static Drain to Source on State
Resistance vs. Drain Current
Static Drain to Source on State Resistance
RDS (on) (mΩ)
200
150
100
050 100 150 200 0.1 0.3 1 310 30 100
100
80
60
40
20
0246810
1000
300
100
30
10
1
0.3
0.1
3
Ta = 25°C
10 µs
100 µs
1 ms
DC Operation
(Tc = 25°C)
PW = 10 ms (1 shot)
3.5 V
3 V
50
V
GS
= 10 V
5 V
4 V
2.5 V
100
80
60
40
20
012345
Tc = –25°C
25°C
75°C
V
DS = 10 V
Pulse Test
Pulse Test
Operation in
this area is
limited by R
DS(on)
048
12 16 20
0.5
0.4
0.3
0.2
0.1
Pulse Test
ID = 50 A
20 A
10 A
130 100
3
100
2
5
1
10 300
20
10 V
GS
= 4 V
10 V
Pulse Test
50
1000
2SK3070(L), 2SK3070(S)
Rev.9.00 Sep 07, 2005 page 4 of 8
Case Temperature T
C
(°C)
Static Drain to Source on State
Resistance vs. Temperature
Static Drain to Source on State Resistance
R
DS (on)
(mΩ)
Forward Transfer Admittance
vs. Drain Current
Drain Current I
D
(A)
Forward Transfer Admittance yfs (S)
Body to Drain Diode Reverse
Recovery Time
Reverse Drain Current I
DR
(A)
Reverse Recovery Time trr (ns)
Typical Capacitance
vs. Drain to Source Voltage
Drain to Source Voltage V
DS
(V)
Capacitance C (pF)
Dynamic Input Characteristics
Gate Charge Qg (nc)
Drain to Source Voltage V
DS
(V)
Gate to Source Voltage V
GS
(V)
Switching Characteristics
Switching Time t (ns)
Drain Current I
D
(A)
20
16
12
8
4
–50 0 50 100 150 200
0
V
GS
= 10 V
4 V
Pulse Test
10, 20, 50 A
I
D
= 50 A
10, 20 A
0.1 0.3 1 3 10 30 100
500
100
200
20
50
10
2
5
1
0.5
Tc = –25°C
75°C
25°C
V
DS
= 10 V
Pulse Test
0.1 0.3 1 3 10 30 100 01020304050
1000
10000
3000
100
80
60
40
20
0
20
16
12
8
4
80 160 240 320 400
0
1000
100
200
20
10
0.1 0.2 210 100
1000
500
100
200
20
50
10
di / dt = 50 A / µs
V
GS
= 0, Ta = 25°C
300
20
1
100
V
GS
= 0
f = 1 MHz
Ciss
Coss
Crss
I
D
= 75 A
V
GS
V
DS
V
DD
= 40 V
25 V
10 V
0.5 5
500
50
50
V
GS
= 10 V, V
DD
= 30 V
PW = 5 µs, duty < 1 %
tr
td(on)
td(off)
tf
30000
V
DD
= 40 V
25 V
10 V
2SK3070(L), 2SK3070(S)
Rev.9.00 Sep 07, 2005 page 5 of 8
Pulse Width PW (S)
Normalized Transient Thermal Impedance γs (t)
Normalized Transient Thermal Impedance vs. Pulse Width
Channel Temperature Tch (°C)
Repetitive Avalanche Energy E
AR
(mJ)
Maximum Avalanche Energy vs.
Channel Temperature Derating
Source to Drain Voltage V
SD
(V)
Reverse Drain Current I
DR
(A)
Reverse Drain Current vs.
Source to Drain Voltage
D. U. T
Rg
I
AP
Monitor
V
DS
Monitor
V
DD
50 Ω
Vin
15 V
0
ID
V
DS
I
AP
V
(BR)DSS
L
V
DD
E
AR
= • L • I
AP2
•
2
1V
DSS
V
DSS
– V
DD
Avalanche Test Circuit Avalanche Waveform
00.4 0.8 1.2 1.6 2.0
Pulse Test
V
GS
= 0, –5 V
5 V
10 V
100
80
60
40
20
500
400
300
200
100
25 50 75 100 125 150
0
I
AP = 50 A
V
DD = 25 V
duty < 0.1 %
Rg > 50 Ω
3
1
0.3
0.1
0.03
0.01
10 µ100 µ1 m 10 m 100 m 1 10
DM
P
PW
T
D = PW
T
ch – c(t) = s (t) • ch – c
ch – c = 1.25°C/W, Tc = 25°C
θ γ θ
θ
Tc = 25°C
D = 1
0.5
0.2
0.1
0.05
0.02
0.01
1shot pulse
2SK3070(L), 2SK3070(S)
Rev.9.00 Sep 07, 2005 page 6 of 8
Vin Monitor
D.U.T.
Vin
10 V
R
L
V
DD
= 30 V
tr
td(on)
Vin
90% 90%
10%
10%
Vout
td(off)
Vout
Monitor
50 Ω
90%
10%
tf
Switching Time Test Circuit Switching Time Waveforms
2SK3070(L), 2SK3070(S)
Rev.9.00 Sep 07, 2005 page 7 of 8
Package Dimensions
10.2 ± 0.3
0.86
0.76 ± 0.1
2.54 ± 0.5
2.54 ± 0.5
+ 0.2
– 0.1
1.3 ± 0.2
4.44 ± 0.2
1.3 ± 0.15
2.49 ± 0.2
0.4 ± 0.1
11.0 ± 0.5
8.6 ± 0.3
10.0
11.3 ± 0.5
+ 0.3
– 0.5
(1.4)
1.37 ± 0.2
Package Name
PRSS0004AE-A LDPAK(L) / LDPAK(L)V
MASS[Typ.]
1.40g
RENESAS CodeJEITA Package Code
Unit: mm
10.2 ± 0.3
1.37 ± 0.2
(1.5)
(1.4)
8.6 ± 0.3
10.0
+ 0.3
– 0.5
4.44 ± 0.2
1.3 ± 0.15
0.1
+ 0.2
– 0.1
0.4 ± 0.1
2.49 ± 0.2
0.86
+ 0.2
– 0.1
2.54 ± 0.5
2.54 ± 0.5
1.3 ± 0.2
3.0
+ 0.3
– 0.5
(1.5)
7.8
6.6
2.2
1.7
7.8
7.0
SC-83 1.30g
MASS[Typ.]
LDPAK(S)-(1) / LDPAK(S)-(1)V
PRSS0004AE-B
RENESAS CodeJEITA Package Code Package Name
Unit: mm
2SK3070(L), 2SK3070(S)
Rev.9.00 Sep 07, 2005 page 8 of 8
Ordering Information
Part Name Quantity Shipping Container
2SK3070L-E 500 pcs Box (Tube)
2SK3070STL-E 500 pcs Taping
Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of
production before ordering the product.
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