Copyright © Harris Corporation 1995
7-13
SEMICONDUCTOR
Package
JEDEC STYLE TO-251
JEDEC STYLE TO-252
Symbol
ANODE
CATHODE
CATHODE
(FLANGE)
ANODE
CATHODE
CATHODE
(FLANGE)
K
A
Features
• Hyperfast with Soft Recovery. . . . . . . . . . . . . . . . . . . . . . . . . <30ns
• Operating Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +175oC
• Reverse Voltage Up To. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V
• A valanche Energy Rated
• Planar Construction
Applications
• Switching Power Supplies
• Power Switching Circuits
• General Purpose
Description
RHRD640, RHRD650, RHRD660, RHRD640S, RHRD650S and
RHRD660S are hyperfast diodes with soft recovery characteristics (tRR
< 30ns). They have half the recovery time of ultrafast diodes and are
sil icon nitride passivated ion-implanted epitaxial planar construction.
These devices are intended for use as freewheeling/clamping diodes
and rectifiers in a variety of switching power supplies and other power
switching applications. Their low stored charge and hyperfast soft
recovery minimize ringing and electrical noise in many power switching
circuits reducing power loss in the switching transistors.
Formerly developmental type TA49057.
PACKAGE AVAILABILITY
PART NUMBER PACKAGE BRAND
RHRD640 TO-251 RHR640
RHRD650 TO-251 RHR650
RHRD660 TO-251 RHR660
RHRD640S TO-252 RHR640
RHRD650S TO-252 RHR650
RHRD660S TO-252 RHR660
NOTE: When ordering, use the entire part number . Add the suf fix 9A to obtain
the TO-252 variant in tape and reel, e.g. RHRD660S9A.
April 1995
Absolute Maximum Ratings TC = +25oC, Unless Otherwise Specified
RHRD640
RHRD640S RHRD650
RHRD650S RHRD660
RHRD660S UNITS
Peak Repetitive Reverse Voltage. . . . . . . . . . . . . . . . . .VRRM 400 500 600 V
Working Peak Reverse Voltage . . . . . . . . . . . . . . . . . . VRWM 400 500 600 V
DC Blocking Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VR400 500 600 V
Average Rectified Forward Current . . . . . . . . . . . . . . . . IF(AV)
(TC = +152oC) 666A
Repetitive Peak Surge Current. . . . . . . . . . . . . . . . . . . . .IFSM
(Square Wave, 20kHz) 12 12 12 A
Nonrepetitive Peak Surge Current . . . . . . . . . . . . . . . . . .IFSM
(Halfwave, 1 Phase, 60Hz) 60 60 60 A
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . .PD50 50 50 W
Avalanche Energy (See Figures 10 and 11). . . . . . . . . . EAVL 10 10 10 mj
Operating and Storage Temperature . . . . . . . . . . . . TSTG, TJ-65 to +175 -65 to +175 -65 to +175 oC
RHRD640, RHRD650, RHRD660,
RHRD640S, RHRD650S, RHRD660S
6A, 400V - 600V Hyperfast Diodes
File Number 3746.2
7-14
Specifications RHRD640, RHRD650, RHRD660, RHRD640S, RHRD650S, RHRD660S
Electrical Specifications TC = +25oC, Unless Otherwise Specified
SYMBOL TEST
CONDITION
RHRD640, RHRD640S RHRD650, RHRD650S RHRD660, RHRD660S
UNITSMIN TYP MAX MIN TYP MAX MIN TYP MAX
VFIF = 6A, TC = +25oC - - 2.1 - - 2.1 - - 2.1 V
IF = 6A, TC = +150oC - - 1.7 - - 1.7 - - 1.7 V
IRVR = 400V, TC = +25oC --100------µA
V
R
= 500V, TC = +25oC -----100---µA
V
R
= 600V, TC = +25oC --------100µA
I
RV
R
= 400V, TC = +150oC--500------µA
V
R
= 500V, TC = +150oC-----500---µA
V
R
= 600V, TC = +150oC--------500µA
t
RR IF = 1A, dIF/dt = 200A/µs - -30- -30- -30ns
I
F
= 6A, dIF/dt = 200A/µs - -35- -35- -35ns
t
AI
F
= 6A, dIF/dt = 200A/µs - 16 - - 16 - - 16 - ns
tBIF = 6A, dIF/dt = 200A/µs - 8.5 - - 8.5 - - 8.5 - ns
QRR IF = 6A, dIF/dt = 200A/µs - 45 - - 45 - - 45 - nC
CJVR = 10V, IF = 0A - 20 - - 20 - - 20 - pF
RθJC --3--3--3
o
C/W
DEFINITIONS
VF = Instantaneous forward voltage (pw = 300µs, D = 2%).
IR = Instantaneous reverse current.
tRR = Reverse recovery time (See Figure 2), summation of tA + tB.
tA = Time to reach peak reverse current (See Figure 2).
tB = Time from peak IRM to projected zero crossing of IRM based on a straight line from peak IRM through 25% of IRM (See Figure 2).
QRR = Reverse recovery charge.
CJ = Junction capacitance.
RθJC = Thermal resistance junction to case.
EAVL = Controlled avalanche energy. (See Figures 10 and 11).
pw = pulse width.
D = duty cycle.
FIGURE 1. tRR TEST CIRCUIT FIGURE 2. tRR WAVEFORMS AND DEFINITIONS
C1
LLOOP
DUT
Q3
R3
Q4
Q2
R1
R2
-V4
Q1
-V2
0
0
+V1
t1
t2
t3
R4
+V3
V1 AMPLITUDE CONTROLS IF
V2 AMPLITUDE CONTROLS dI F/dt
L1 = SELF INDUCTANCE OF t1≥ 5tA(MAX)
t2 > tRR
t3 > 0
L1
R4
tA(MIN)
10
≤
R4+ LLOOP
dt
dIF
IFtRR
tAtB
0
IRM
0.25 IRM
VR
VRM
7-15
RHRD640, RHRD650, RHRD660, RHRD640S, RHRD650S, RHRD660S
Typical Performance Curves
FIGURE 3. TYPICAL FORWARD CURRENT vs FORWARD
VOLTAGE DROP FIGURE 4. TYPICAL REVERSE CURRENT vs REVERSE
VOLTAGE
FIGURE 5. TYPICAL tRR, tA AND tB CURVES vs FORWARD
CURRENT AT +25oCFIGURE 6. TYPICAL tRR, tA AND tB CURVES vs FORWARD
CURRENT AT +100oC
FIGURE 7. TYPICAL tRR, tA AND tB CURVES vs FORWARD
CURRENT AT +175oCFIGURE 8. CURRENT DERATING CURVE FOR ALL TYPES
VF, FORWARD VOLTAGE (V)
1
30
0.5
10
00.5 2.5
12
1.5
IF, FORWARD CURRENT (A)
3
+25oC
+175oC+100oC
0 600400300200
100
0.01
0.1
1
10
1000
100 500
+100oC
+175oC
+25oC
VR, REVERSE VOLTAGE (V)
IR, REVERSE CURRENT (µA)
IF, FORWARD CURRENT (A)
0
20
30
25
tB
15 tA
10
t, RECOVERY TIMES (ns)
5
TC = +25oC, dIF/dt = 200A/µs
160.5
tRR
tA
tRR
tB
IF, FORWARD CURRENT (A)
0
50
40
30
20
t, RECOVERY TIMES (ns)
10
TC = +100oC, dIF/dt = 200A/µs
160.5
tB
tA
tRR
IF, FORWARD CURRENT (A)
0
60
75
45
t, RECOVERY TIMES (ns)
30
15
160.5
TC = +175oC, dIF/dt = 200A/µs
5
1
0155 160 170
150 175
165
2
3
4DC
TC, CASE TEMPERATURE (oC)
SQ. WAVE
IF(AV), AVERAGE FORWARD CURRENT (A)
6
140 145
7-16
RHRD640, RHRD650, RHRD660, RHRD640S, RHRD650S, RHRD660S
FIGURE 9. TYPICAL JUNCTION CAPACITANCE vs REVERSE VOLTAGE
Test Circuit and Waveforms
FIGURE 10. AVALANCHE ENERGY TEST CIRCUIT FIGURE 11. AVALANCHE CURRENT AND VOLTAGE
WAVEFORMS
Typical Performance Curves
(Continued)
VR, REVERSE VOLTAGE (V)
20
10
0
40
050 100 150 200
CJ, JUNCTION CAPACITANCE (pF)
50
30
12V
Q2
Q1
12V
130Ω
DUT
CURRENT
SENSE
+
LR
1MΩ
VDD
130Ω
IMAX = 1A
L = 40mH
R < 0.1Ω
EAVL = 1/2LI2 [VAVL/(VAVL - VDD)]
Q1 AND Q2 ARE 1000V MOSFETs
-
VDD
IV
t
0t
1t
2
I
L
V
AVL
t
IL
