S E M I C O N D U C T O R RHRD640, RHRD650, RHRD660, RHRD640S, RHRD650S, RHRD660S 6A, 400V - 600V Hyperfast Diodes April 1995 Features * * * * * Package Hyperfast with Soft Recovery. . . . . . . . . . . . . . . . . . . . . . . . . <30ns Operating Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +175oC Reverse Voltage Up To. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V Avalanche Energy Rated Planar Construction JEDEC STYLE TO-251 ANODE CATHODE CATHODE (FLANGE) Applications * Switching Power Supplies * Power Switching Circuits * General Purpose JEDEC STYLE TO-252 CATHODE (FLANGE) Description CATHODE RHRD640, RHRD650, RHRD660, RHRD640S, RHRD650S and RHRD660S are hyperfast diodes with soft recovery characteristics (tRR < 30ns). They have half the recovery time of ultrafast diodes and are sil icon nitride passivated ion-implanted epitaxial planar construction. These devices are intended for use as freewheeling/clamping diodes and rectifiers in a variety of switching power supplies and other power switching applications. Their low stored charge and hyperfast soft recovery minimize ringing and electrical noise in many power switching circuits reducing power loss in the switching transistors. ANODE Symbol K PACKAGE AVAILABILITY PART NUMBER PACKAGE BRAND RHRD640 TO-251 RHR640 RHRD650 TO-251 RHR650 RHRD660 TO-251 RHR660 RHRD640S TO-252 RHR640 RHRD650S TO-252 RHR650 RHRD660S TO-252 RHR660 A NOTE: When ordering, use the entire part number. Add the suffix 9A to obtain the TO-252 variant in tape and reel, e.g. RHRD660S9A. Formerly developmental type TA49057. Absolute Maximum Ratings TC = +25oC, Unless Otherwise Specified Peak Repetitive Reverse Voltage . . . . . . . . . . . . . . . . . .VRRM Working Peak Reverse Voltage . . . . . . . . . . . . . . . . . . VRWM DC Blocking Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VR Average Rectified Forward Current . . . . . . . . . . . . . . . . IF(AV) (TC = +152oC) Repetitive Peak Surge Current. . . . . . . . . . . . . . . . . . . . .IFSM (Square Wave, 20kHz) Nonrepetitive Peak Surge Current . . . . . . . . . . . . . . . . . .IFSM (Halfwave, 1 Phase, 60Hz) Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . PD Avalanche Energy (See Figures 10 and 11) . . . . . . . . . . EAVL Operating and Storage Temperature . . . . . . . . . . . . TSTG, TJ Copyright RHRD640 RHRD640S 400 400 400 6 RHRD650 RHRD650S 500 500 500 6 RHRD660 RHRD660S 600 600 600 6 UNITS V V V A 12 12 12 A 60 60 60 A 50 10 -65 to +175 50 10 -65 to +175 50 10 -65 to +175 W mj oC (c) Harris Corporation 1995 File Number 7-13 3746.2 Specifications RHRD640, RHRD650, RHRD660, RHRD640S, RHRD650S, RHRD660S Electrical Specifications TC = +25oC, Unless Otherwise Specified RHRD640, RHRD640S RHRD650, RHRD650S RHRD660, RHRD660S MIN TYP MAX MIN TYP MAX MIN TYP MAX UNITS IF = 6A, TC = +25oC - - 2.1 - - 2.1 - - 2.1 V IF = 6A, TC = +150oC - - 1.7 - - 1.7 - - 1.7 V VR = 400V, TC = +25oC - - 100 - - - - - - A VR = 500V, TC = +25oC - - - - - 100 - - - A VR = 600V, TC = +25oC - - - - - - - - 100 A VR = 400V, TC = +150oC - - 500 - - - - - - A VR = 500V, TC = +150oC - - - - - 500 - - - A VR = 600V, TC = +150oC - - - - - - - - 500 A IF = 1A, dIF/dt = 200A/s - - 30 - - 30 - - 30 ns IF = 6A, dIF/dt = 200A/s - - 35 - - 35 - - 35 ns tA IF = 6A, dIF/dt = 200A/s - 16 - - 16 - - 16 - ns tB IF = 6A, dIF/dt = 200A/s - 8.5 - - 8.5 - - 8.5 - ns QRR IF = 6A, dIF/dt = 200A/s - 45 - - 45 - - 45 - nC VR = 10V, IF = 0A - 20 - - 20 - - 20 - pF - - 3 - - 3 - - 3 oC/W TEST CONDITION SYMBOL VF IR IR tRR CJ RJC DEFINITIONS VF = Instantaneous forward voltage (pw = 300s, D = 2%). IR = Instantaneous reverse current. tRR = Reverse recovery time (See Figure 2), summation of tA + tB. tA = Time to reach peak reverse current (See Figure 2). tB = Time from peak IRM to projected zero crossing of IRM based on a straight line from peak IRM through 25% of IRM (See Figure 2). QRR = Reverse recovery charge. CJ = Junction capacitance. RJC = Thermal resistance junction to case. EAVL = Controlled avalanche energy. (See Figures 10 and 11). pw = pulse width. D = duty cycle. V1 AMPLITUDE CONTROLS IF V2 AMPLITUDE CONTROLS dIF/dt L1 = SELF INDUCTANCE OF R4 + LLOOP R1 +V3 t1 5tA(MAX) t2 > tRR t3 > 0 L1 tA(MIN) R4 10 Q2 Q1 +V1 0 IF LLOOP t2 R2 t1 dIF dt tRR tA Q4 0.25 IRM t3 IRM C1 0 R4 VR Q3 -V2 tB 0 DUT R3 -V4 VRM FIGURE 2. tRR WAVEFORMS AND DEFINITIONS FIGURE 1. tRR TEST CIRCUIT 7-14 RHRD640, RHRD650, RHRD660, RHRD640S, RHRD650S, RHRD660S Typical Performance Curves 1000 30 IR , REVERSE CURRENT (A) IF , FORWARD CURRENT (A) +175oC 10 +175oC +25oC +100oC 1 0.5 100 +100oC 10 1 0.1 +25oC 0.01 0 0.5 1.5 1 2 2.5 3 0 100 200 300 FIGURE 3. TYPICAL FORWARD CURRENT vs FORWARD VOLTAGE DROP TC = +25oC, dIF/dt = 200A/s TC = +100oC, dIF/dt = 200A/s 50 t, RECOVERY TIMES (ns) t, RECOVERY TIMES (ns) 25 15 tRR tA 10 tB 5 0 0.5 1 IF , FORWARD CURRENT (A) TC = +175oC, dIF/dt = 200A/s IF(AV) , AVERAGE FORWARD CURRENT (A) t, RECOVERY TIMES (ns) 60 tRR 45 tA tB 15 1 IF , FORWARD CURRENT (A) tRR 30 tA 20 tB 10 1 IF , FORWARD CURRENT (A) 6 FIGURE 6. TYPICAL tRR, tA AND tB CURVES vs FORWARD CURRENT AT +100oC 75 0 0.5 40 0 0.5 6 FIGURE 5. TYPICAL tRR, tA AND tB CURVES vs FORWARD CURRENT AT +25oC 30 600 FIGURE 4. TYPICAL REVERSE CURRENT vs REVERSE VOLTAGE 30 20 500 400 VR , REVERSE VOLTAGE (V) VF , FORWARD VOLTAGE (V) 6 6 5 DC 4 SQ. WAVE 3 2 1 0 140 145 150 155 160 165 170 175 TC , CASE TEMPERATURE (oC) FIGURE 7. TYPICAL tRR, tA AND tB CURVES vs FORWARD CURRENT AT +175oC FIGURE 8. CURRENT DERATING CURVE FOR ALL TYPES 7-15 RHRD640, RHRD650, RHRD660, RHRD640S, RHRD650S, RHRD660S Typical Performance Curves (Continued) CJ , JUNCTION CAPACITANCE (pF) 50 40 30 20 10 0 0 50 150 100 200 VR , REVERSE VOLTAGE (V) FIGURE 9. TYPICAL JUNCTION CAPACITANCE vs REVERSE VOLTAGE Test Circuit and Waveforms IMAX = 1A L = 40mH R < 0.1 EAVL = 1/2LI2 [VAVL/(VAVL - VDD)] Q1 AND Q2 ARE 1000V MOSFETs Q1 130 L R + VDD 1M DUT 12V VAVL Q2 130 CURRENT SENSE IL IL I V VDD 12V FIGURE 10. AVALANCHE ENERGY TEST CIRCUIT t0 t1 t2 FIGURE 11. AVALANCHE CURRENT AND VOLTAGE WAVEFORMS 7-16 t