MBR1645PBF - Vishay [Semiconductors]

VS-MBR16...PbF Series, VS-MBR16...-N3 Series

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Revision: 29-Aug-11 1Document Number: 94286

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Schottky Rectifier, 16 A

FEATURES

• 150 °C TJ operation

• Low forward voltage drop

• High frequency operation

• High purity, high temperature epoxy

encapsulation for enhanced mechanical

strength and moisture resistance

• Guard ring for enhanced ruggedness and long

term reliability

• Compliant to RoHS Directive 2002/95/EC

• Designed and qualified according to JEDEC-JESD47

• Halogen-free according to IEC 61249-2-21 definition

(-N3 only)

DESCRIPTION

The VS-MBR16... Schottky rectifier has been optimized for

low reverse leakage at high temperature. The proprietary

barrier technology allows for reliable operation up to 150 °C

junction temperature. Typical applications are in switching

power supplies, converters, freewheeling diodes, and

reverse battery protection.

PRODUCT SUMMARY

Package TO-220AC

IF(AV) 16 A

VR35 V, 45 V

VF at IF0.57 V

IRM max. 40 mA at 125 °C

TJ max. 150 °C

Diode variation Single die

EAS 24 mJ

Anode

Cathode

Base

cathode

TO-220AC

MAJOR RATINGS AND CHARACTERISTICS

SYMBOL CHARACTERISTICS VALUES UNITS

IF(AV) Rectangular waveform 16 A

VRRM 35/45 V

IFSM tp = 5 μs sine 1800 A

VF16 Apk, TJ = 125 °C 0.57 V

TJRange - 65 to 150 °C

VOLTAGE RATINGS

PARAMETER SYMBOL VS-MBR1635PbF VS-MBR1635-N3 VS-MBR1645PbF VS-MBR1645-N3 UNITS

Maximum DC reverse

voltage VR

35 35 45 45 V

Maximum working peak

reverse voltage VRWM

ABSOLUTE MAXIMUM RATINGS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum average forward current IF(AV) TC = 134 °C, rated VR16 A

Non-repetitive peak surge current IFSM

5 µs sine or 3 µs rect. pulse

Following any rated load

condition and with rated

VRRM applied

1800

Surge applied at rated load condition half wave

single phase, 60 Hz 150

Non-repetitive avalanche energy EAS TJ = 25 °C, IAS = 3.6 A, L = 3.7 mH 24 mJ

Repetitive avalanche current IAR Current decaying linearly to zero in 1 μs

Frequency limited by TJ maximum VA = 1.5 x VR typical 3.6 A

VS-MBR16...PbF Series, VS-MBR16...-N3 Series

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Revision: 29-Aug-11 2Document Number: 94286

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Note

(1) Pulse width < 300 μs, duty cycle < 2 %

ELECTRICAL SPECIFICATIONS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum forward voltage drop VFM (1) 16 A TJ = 25 °C 0.63 V

TJ = 125 °C 0.57

Maximum instantaneous reverse current IRM (1) TJ = 25 °C Rated DC voltage 0.2 mA

TJ = 125 °C 40

Maximum junction capacitance CTVR = 5 VDC (test signal range 100 kHz to 1 MHz) 25 °C 1400 pF

Typical series inductance LSMeasured from top of terminal to mounting plane 8.0 nH

Maximum voltage rate of change dV/dt Rated VR10 000 V/µs

THERMAL - MECHANICAL SPECIFICATIONS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum junction temperature range TJ- 65 to 150 °C

Maximum storage temperature range TStg - 65 to 175

Maximum thermal resistance,

junction to case RthJC DC operation 1.50

°C/W

Typical thermal resistance,

case to heatsink RthCS Mounting surface, smooth and greased 0.50

Approximate weight 2g

0.07 oz.

Mounting torque minimum 6 (5) kgf · cm

(lbf · in)

maximum 12 (10)

Marking device Case style TO-220AC (JEDEC) MBR1635

MBR1645

VS-MBR16...PbF Series, VS-MBR16...-N3 Series

www.vishay.com Vishay Semiconductors

Revision: 29-Aug-11 3Document Number: 94286

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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

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Fig. 1 - Maximum Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs.

Reverse Voltage

Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage

Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics

1.20.4

- Forward Voltage Drop (V)

- Instantaneous Forward Current (A)

100

0 0.2 0.6 0.8

TJ = 150 °C

TJ = 125 °C

TJ = 25 °C

1.0

0.1

100

0.01

0.001

- Reverse Voltage (V)

- Reverse Current (µA)

15 35 4525

0.0001

TJ = 150 °C

TJ = 125 °C

TJ = 100 °C

TJ = 75 °C

TJ = 50 °C

TJ = 25 °C

510 20 30 40

1000

020 50

100

- Reverse Voltage (V)

- Junction Capacitance (pF)

10 30 40

TJ = 25 °C

10 000

0.001

0.1

0.00001 0.0001 0.001 0.01 0.1

t1 - Rectangular Pulse Duration (s)

ZthJC - Thermal Impedance (°C/W)

1 10

0.01

D = 0.75

D = 0.50

D = 0.33

D = 0.25

D = 0.20

Single pulse

(thermal resistance)

PDM

Notes:

1. Duty factor D = t1/t2

2. Peak TJ = PDM x ZthJC + TC

VS-MBR16...PbF Series, VS-MBR16...-N3 Series

www.vishay.com Vishay Semiconductors

Revision: 29-Aug-11 4Document Number: 94286

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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

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Fig. 5 - Maximum Allowable Case Temperature vs.

Average Forward Current

Fig. 6 - Forward Power Loss Characteristics

Fig. 7 - Maximum Non-Repetitive Surge Current (Per Leg)

Fig. 8 - Unclamped Inductive Test Circuit

Note

(1) Formula used: TC = TJ - (Pd + PdREV) x RthJC;

Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6);

PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = Rated VR applied

120

025

F(AV)

- Average Forward Current (A)

Allowable Case Temperature (°C)

125

140

135

155

150

130

145

2015105

See note (1)

Square wave (D = 0.50)

Rated VR applied

025

Average Power Loss (W)

IF(AV) - Average Forward Current (A)

5 101520

D = 0.75

D = 0.50

D = 0.33

D = 0.25

D = 0.20

RMS limit

1000

100 1000

- Square Wave Pulse Duration (µs)

FSM

- Non-Repetitive Surge Current (A)

100

10 00010

At any rated load condition

and with rated VRRM applied

following surge

10 000

Current

monitor

High-speed

switch

D.U.T.

Rg = 25 Ω

Freewheel

diode Vd = 25 V

IRFP460

40HFL40S02

VS-MBR16...PbF Series, VS-MBR16...-N3 Series

www.vishay.com Vishay Semiconductors

Revision: 29-Aug-11 5Document Number: 94286

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

ORDERING INFORMATION TABLE

ORDERING INFORMATION (Example)

PREFERRED P/N QUANTITY PER T/R MINIMUM ORDER QUANTITY PACKAGING DESCRIPTION

VS-MBR1635PbF 50 1000 Antistatic plastic tube

VS-MBR1635-N3 50 1000 Antistatic plastic tube

VS-MBR1645PbF 50 1000 Antistatic plastic tube

VS-MBR1645-N3 50 1000 Antistatic plastic tube

LINKS TO RELATED DOCUMENTS

Dimensions www.vishay.com/doc?95221

Part marking information TO-220AC PbF www.vishay.com/doc?95224

TO-220AC -N3 www.vishay.com/doc?95068

- Schottky MBR series

- Current rating (16 = 16 A)

- Voltage ratings 35 = 35 V

45 = 45 V

Device code

2 43 5

MBR 16 45 PbFVS-

-Vishay Semiconductors product

PbF = Lead (Pb)-free and RoHS compliant

-N3 = Halogen-free, RoHS compliant, and totally lead (Pb)-free

Environmental digit

Document Number: 95221 For technical questions within your region, please contact one of the following: www.vishay.com

Revision: 07-Mar-11 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 1

TO-220AC

Outline Dimensions

Vishay Semiconductors

DIMENSIONS in millimeters and inches

Notes

(1) Dimensioning and tolerancing as per ASME Y14.5M-1994

(2) Lead dimension and finish uncontrolled in L1

(3) Dimension D, D1 and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured

at the outermost extremes of the plastic body

(4) Dimension b1, b3 and c1 apply to base metal only

(5) Controlling dimension: inches

(6) Thermal pad contour optional within dimensions E, H1, D2 and E1

(7) Dimension E2 x H1 define a zone where stamping and singulation irregularities are allowed

(8) Outline conforms to JEDEC TO-220, D2 (minimum) where dimensions are derived from the actual package outline

SYMBOL MILLIMETERS INCHES NOTES SYMBOL MILLIMETERS INCHES NOTES

MIN. MAX. MIN. MAX. MIN. MAX. MIN. MAX.

A 4.25 4.65 0.167 0.183 E1 6.86 8.89 0.270 0.350 6

A1 1.14 1.40 0.045 0.055 E2 - 0.76 - 0.030 7

A2 2.56 2.92 0.101 0.115 e 2.41 2.67 0.095 0.105

b 0.69 1.01 0.027 0.040 e1 4.88 5.28 0.192 0.208

b1 0.38 0.97 0.015 0.038 4 H1 6.09 6.48 0.240 0.255 6, 7

b2 1.20 1.73 0.047 0.068 L 13.52 14.02 0.532 0.552

b3 1.14 1.73 0.045 0.068 4 L1 3.32 3.82 0.131 0.150 2

c 0.36 0.61 0.014 0.024 L3 1.78 2.13 0.070 0.084

c1 0.36 0.56 0.014 0.022 4 L4 0.76 1.27 0.030 0.050 2

D 14.85 15.25 0.585 0.600 3 Ø P 3.54 3.73 0.139 0.147

D1 8.38 9.02 0.330 0.355 Q 2.60 3.00 0.102 0.118

D2 11.68 12.88 0.460 0.507 6 90° to 93° 90° to 93°

E 10.11 10.51 0.398 0.414 3, 6

Detail B

Lead tip

Ø P

0.015 AB

0.014 AB

Seating

plane

Lead assignments

Diodes

1 + 2 - Cathode

3 - Anode

Conforms to JEDEC outline TO-220AC

(6)

(7)

(6)

(7)

View A - A

E1 (6)

D2 (6)

Thermal pad

Detail B

123

2 x b2 2 x b

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Revision: 12-Mar-12 1Document Number: 91000

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