MBR(F,B)1035 thru MBR(F,B)1060 Vishay General Semiconductor Schottky Barrier Rectifier TO-220AC FEATURES * Low power loss, high efficiency ITO-220AC * Low forward voltage drop * High forward surge capability * High frequency operation 2 2 * Meets MSL level 1, per J-STD-020, LF maximum peak of 245 C (for TO-263AB package) 1 1 MBR10xx MBRF10xx PIN 1 PIN 1 * Solder dip 260 C, 40 s (for TO-220AC and ITO-220AC package) CASE PIN 2 PIN 2 TO-263AB * Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC K TYPICAL APPLICATIONS For use in low voltage, high frequency rectifier of switching mode power supplies, freewheeling diodes, dc-to-dc converters and polarity protection application. 2 1 MBRB10xx PIN 1 PIN 2 K HEATSINK MECHANICAL DATA Case: TO-220AC, ITO-220AC, TO-263AB Epoxy meets UL 94V-0 flammability rating Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD22-B102 E3 suffix for consumer grade, meets JESD 201 class 1A whisker test, HE3 suffix for high reliability grade (AEC Q101 qualified), meets JESD 201 class 2 whisker test Polarity: As marked Mounting Torque: 10 in-lbs maximum PRIMARY CHARACTERISTICS IF(AV) 10 A VRRM 35 V to 60 V IFSM 150 A VF 0.57 V, 0.70 V TJ max. 150 C MAXIMUM RATINGS (TC = 25 C unless otherwise noted) PARAMETER SYMBOL MBR1035 MBR1045 MBR1050 MBR1060 UNIT Maximum repetitive peak reverse voltage VRRM 35 45 50 60 V Maximum average forward rectified current (Fig. 1) IF(AV) 10 A Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load IFSM 150 A Peak repetitive reverse current at tp = 2.0 s, 1 kHz IRRM Voltage rate of change (rated VR) dV/dt Operating junction temperature range 1.0 0.5 10 000 A V/s TJ - 65 to + 150 C Storage temperature range TSTG - 65 to + 175 C Isolation voltage (ITO-220AC only) from terminal to heatsink t = 1 min VAC 1500 V Document Number: 88669 Revision: 07-May-08 For technical questions within your region, please contact one of the following: PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com www.vishay.com 1 MBR(F,B)1035 thru MBR(F,B)1060 Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TC = 25 C unless otherwise noted) PARAMETER TEST CONDITIONS IF = 10 A IF = 10 A IF = 20 A IF = 20 A Maximum instantaneous forward voltage (1) Maximum instantaneous reverse current at rated DC blocking voltage (1) SYMBOL TJ = 25 C TJ = 125 C TJ = 25 C TJ = 125 C VF TJ = 25 C TJ = 125 C IR MBR1035 MBR1045 MBR1050 MBR1060 UNIT 0.80 0.70 0.95 0.85 0.57 0.84 0.72 V 0.10 15 mA Note: (1) Pulse test: 300 s pulse width, 1 % duty cycle THERMAL CHARACTERISTICS (TC = 25 C unless otherwise noted) PARAMETER SYMBOL MBR MBRF MBRB UNIT RJC 2.0 4.0 2.0 C/W Maximum thermal resistance from junction to case ORDERING INFORMATION (Example) PACKAGE PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE TO-220AC MBR1045-E3/45 1.80 45 50/tube Tube ITO-220AC MBRF1045-E3/45 1.94 45 50/tube Tube TO-263AB MBRB1045-E3/45 1.33 45 50/tube Tube TO-263AB MBRB1045-E3/81 1.33 81 800/reel Tape and reel TO-220AC MBR1045HE3/45 (1) 1.80 45 50/tube Tube ITO-220AC MBRF1045HE3/45 (1) 1.94 45 50/tube Tube TO-263AB MBRB1045HE3/45 (1) 1.33 45 50/tube Tube TO-263AB MBRB1045HE3/81 (1) 1.33 81 800/reel Tape and reel Note: (1) Automotive grade AEC Q101 qualified RATINGS AND CHARACTERISTICS CURVES (TA = 25 C unless otherwise noted) 12 175 TJ = TJ Max. 8.3 ms Single Half Sine-Wave Peak Forward Surge Current (A) Average Forward Current (A) Resistive or Inductive Load 10 8 6 4 2 MBR1035 - MBR1045 MBR1050 - MBR1060 150 125 100 75 50 25 0 0 50 100 150 0.1 1 10 100 Case Temperature (C) Number of Cycles at 60 Hz Figure 1. Forward Current Derating Curve Figure 2. Maximum Non-Repetitive Peak Forward Surge Current www.vishay.com 2 For technical questions within your region, please contact one of the following: PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com Document Number: 88669 Revision: 07-May-08 MBR(F,B)1035 thru MBR(F,B)1060 Vishay General Semiconductor 10 000 TJ = 150 C 10 Junction Capacitance (pF) Instantaneous Forward Current (A) 100 Pulse Width = 300 s 1 % Duty Cycle 1 TJ = 25 C 0.1 MBR1035 - MBR1045 MBR1050 - MBR1060 0.01 1000 MBR1035 - MBR1045 MBR1050 - MBR1060 100 0 0.2 0.4 0.6 0.8 1.0 1.2 0.1 1 10 100 Instantaneous Forward Voltage (V) Reverse Voltage (V) Figure 3. Typical Instantaneous Forward Characteristics Figure 5. Typical Junction Capacitance 100 100 Transient Thermal Impedance (C/W) Instantenous Reverse Current (mA) TJ = 25 C f = 1.0 MHz Vsig = 50 mVp-p TJ = 125 C 10 1 TJ = 75 C 0.1 TJ = 25 C MBR1035 - MBR1045 MBR1050 - MBR1060 0.01 0.001 0 20 40 60 80 100 10 1 0.1 0.01 0.1 1 10 100 Percent of Rated Peak Reverse Voltage (%) t - Pulse Duration (s) Figure 4. Typical Reverse Characteristics Figure 6. Typical Transient Thermal Impedance Document Number: 88669 Revision: 07-May-08 For technical questions within your region, please contact one of the following: PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com www.vishay.com 3 MBR(F,B)1035 thru MBR(F,B)1060 Vishay General Semiconductor PACKAGE OUTLINE DIMENSIONS in inches (millimeters) ITO-220AC TO-220AC 0.404 (10.26) 0.384 (9.75) 0.415 (10.54) MAX. 0.370 (9.40) 0.360 (9.14) 0.154 (3.91) DIA. 0.148 (3.74) DIA. 0.113 (2.87) 0.103 (2.62) 0.145 (3.68) 0.135 (3.43) 1 PIN 2 0.560 (14.22) 0.530 (13.46) 0.110 (2.79) 0.100 (2.54) 0.057 (1.45) 0.045 (1.14) 0.035 (0.89) 0.025 (0.64) 0.025 (0.64) 0.015 (0.38) 0.022 (0.56) 0.014 (0.36) 0.205 (5.20) 0.195 (4.95) 7 REF. 0.191 (4.85) 0.171 (4.35) CASE 0.037 (0.94) 0.027 (0.68) 7 REF. 2 1 0.560 (14.22) 0.530 (13.46) PIN 1 0.135 (3.43) DIA. 0.122 (3.08) DIA. 0.350 (8.89) 0.330 (8.38) 0.110 (2.79) 0.100 (2.54) PIN 2 0.105 (2.67) 0.095 (2.41) 0.671 (17.04) 0.651 (16.54) PIN 1.148 (29.16) 1.118 (28.40) 0.160 (4.06) 0.140 (3.56) 0.057 (1.45) 0.045 (1.14) 0.140 (3.56) DIA. 0.125 (3.17) DIA. 0.600 (15.24) 0.580 (14.73) 0.603 (15.32) 0.573 (14.55) 0.350 (8.89) 0.330 (8.38) 7 REF. 0.076 (1.93) REF. 45 REF. 0.635 (16.13) 0.625 (15.87) 0.190 (4.83) 0.170 (4.32) 0.110 (2.79) 0.100 (2.54) 0.076 (1.93) REF. 0.185 (4.70) 0.175 (4.44) 0.055 (1.39) 0.045 (1.14) 0.028 (0.71) 0.020 (0.51) 0.205 (5.21) 0.195 (4.95) TO-263AB 0.411 (10.45) 0.380 (9.65) 0.190 (4.83) 0.160 (4.06) 0.245 (6.22) MIN. 0.055 (1.40) 0.045 (1.14) Mounting Pad Layout 0.42 (10.66) MIN. K 0.360 (9.14) 0.320 (8.13) 1 K 2 0.624 (15.85) 0.591 (15.00) 0 to 0.01 (0 to 0.254) 0.110 (2.79) 0.090 (2.29) 0.021 (0.53) 0.014 (0.36) 0.037 (0.940) 0.027 (0.686) 0.105 (2.67) 0.095 (2.41) www.vishay.com 4 0.055 (1.40) 0.047 (1.19) 0.205 (5.20) 0.195 (4.95) 0.140 (3.56) 0.110 (2.79) 0.33 (8.38) MIN. 0.670 (17.02) 0.591 (15.00) 0.15 (3.81) MIN. 0.08 (2.032) MIN. 0.105 (2.67) 0.095 (2.41) For technical questions within your region, please contact one of the following: PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com Document Number: 88669 Revision: 07-May-08 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Material Category Policy Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment (EEE) - recast, unless otherwise specified as non-compliant. Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU. Revision: 12-Mar-12 1 Document Number: 91000