UNISONIC TECHNOLOGIES CO., LTD
2N3904 NPN SILICON TRANSISTOR
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Copyright © 2012 Unisonic Technologies Co., Ltd QW-R201-027, D
NPN GENERAL PURPOSE
AMPLIFIER
FEATURES
* Collector-Emitter Voltage: VCEO=40V
* Collector Dissipation: PC(MAX)=625mW
* Complementary to 2N3906
ORDERING INFORMATION
Ordering Number Package Pin Assignment Packing
Lead Free Halogen Free 1 2 3
2N3904L-T92-B 2N3904G-T92-B TO-92 E B C Tape Box
2N3904L-T92-K 2N3904G-T92-K TO-92 E B C Bulk
2N3904L-T92-R 2N3904G-T92-R TO-92 E B C Tape Reel
2N3904 NPN SILICON TRANSISTOR
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ABSOLUTE MAXIMUM RATING (TA=25°С, unless otherwise specified)
PARAMETER SYMBOL RATINGS UNIT
Collector-Base Voltage VCBO 60 V
Collector-Emitter Voltage VCEO 40 V
Emitter-Base Voltage VEBO 6 V
Collector Current IC 200 mA
Collector Dissipation PC 625 mW
Junction Temperature TJ 150 °С
Operating and Storage Temperature TSTG -55 ~ +150 °С
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (TA=25°С, unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT
Collector-Base Breakdown Voltage BVCBO I
C=10μA, IE=0 60 V
Collector-Emitter Breakdown Voltage BVCEO I
C=1mA,IB=0 (Note) 40 V
Emitter-Base Breakdown Voltage BVEBO I
E=10μA, IC=0 6 V
Collector-Emitter Saturation Voltage
(Note)
VCE
(
SAT
)
1IC=10mA, IB=1mA 0.2 V
VCE
(
SAT
)
2IC=50mA, IB=5mA 0.3 V
Base-Emitter Saturation Voltage
(Note)
VBE
(
SAT
)
1IC=10mA, IB=1mA 0.65 0.85 V
VBE
(
SAT
)
2IC=50mA, IB=5mA 0.95 V
Collector Cut-off Current ICBO V
CE=30V, VEB=3V 50 nA
Base Cut-off Current IBL V
CE=30V, VEB=3V 50 nA
DC Current Gain (note)
hFE1 V
CE=1V, IC=0.1mA 40
hFE2 V
CE=1V, IC=1mA 70
hFE3 V
CE=1V, IC=10mA 100 300
hFE4 V
CE=1V, IC=50mA 60
hFE5 V
CE=1V, IC=100mA 30
Current Gain Bandwidth Product fT V
CE=20V, IC=10mA, f=100MHz 300 MHz
Output Capacitance COB V
CB=5V, IE=0, f=1MHz 4 pF
Turn on Time tON V
CC=3V,VBE=0.5V,IC=10mA, IB1=1mA 70 ns
Turn off Time tOFF I
B1=1B2=1mA 250 ns
Note: Pulse test: Pulse Width≦300μs, Duty Cycle≦2%
2N3904 NPN SILICON TRANSISTOR
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TYPICAL CHARACTERISTICS
hFE vs. IC
VCE=1V
0.1 0.3 0.5 1 53 10 30 50100
Collector Current, IC (mA)
0
40
80
120
160
200
240
DC Current Gain, hFE
fT vs. IC
0.1 0.3 0.5 1 53 10 30 50100
Collector Current, IC (mA)
10
30
50
100
300
500
1000
Current Gain-Bandwidth Product, fT(MHz)
VCE=20V
Saturation Voltage, VBE(SAT), VCE(SAT)
Capacitance, COB (pF)
Voltage, V(V)
Voltage, V(V)
2N3904 NPN SILICON TRANSISTOR
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TYPICAL CHARACTERISTICS(Cont.)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
