1. Product profile
1.1 General description
High-speed switching diodes, encapsulated in small Surface-Mounted Device (SMD)
plastic packages.
1.2 Features
1.3 Applications
nHigh-speed switching
nGeneral-purpose switching
BAS16 series
High-speed switching diodes
Rev. 05 — 25 August 2008 Product data sheet
Table 1. Product overview
Type number Package Configuration Package
configuration
NXP JEITA JEDEC
BAS16 SOT23 - TO-236AB single small
BAS16H SOD123F - - single small and flat lead
BAS16J SOD323F SC-90 - single very small and flat
lead
BAS16L SOD882 - - single leadless ultra
small
BAS16T SOT416 SC-75 - single ultra small
BAS16VV SOT666 - - triple isolated ultra small and flat
lead
BAS16VY SOT363 SC-88 - triple isolated very small
BAS16W SOT323 SC-70 - single very small
BAS316 SOD323 SC-76 - single very small
BAS516 SOD523 SC-79 - single ultra small and flat
lead
nHigh switching speed: trr ≤4ns nLow capacitance
nLow leakage current nReverse voltage: VR≤100 V
nRepetitive peak reverse voltage:
VRRM ≤100 V
nSmall SMD plastic packages
BAS16_SER_5 © NXP B.V. 2008. All rights reserved.
Product data sheet Rev. 05 — 25 August 2008 2 of 20
NXP Semiconductors BAS16 series
High-speed switching diodes
1.4 Quick reference data
[1] When switched from IF= 10 mA to IR= 10 mA; RL= 100 Ω; measured at IR= 1 mA.
2. Pinning information
[1] The marking bar indicates the cathode.
Table 2. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
Per diode
VRreverse voltage - - 100 V
IRreverse current VR= 80 V - - 0.5 µA
trr reverse recovery time [1] --4ns
Table 3. Pinning
Pin Description Simplified outline Graphic symbol
BAS16; BAS16T; BAS16W
1 anode
2 not connected
3 cathode
BAS16H; BAS16J; BAS316; BAS516
1 cathode [1]
2 anode
BAS16L
1 cathode [1]
2 anode
BAS16VV; BAS16VY
1 anode (diode 1)
2 anode (diode 2)
3 anode (diode 3)
4 cathode (diode 3)
5 cathode (diode 2)
6 cathode (diode 1)
006aaa144
12
3
006aaa764
3
12
001aab540
12
006aab040
2
1
21
Transparent
top view
006aab040
2
1
001aab555
6 45
1 32
006aab106
13
6
2
54
BAS16_SER_5 © NXP B.V. 2008. All rights reserved.
Product data sheet Rev. 05 — 25 August 2008 3 of 20
NXP Semiconductors BAS16 series
High-speed switching diodes
3. Ordering information
4. Marking
[1] * = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
Table 4. Ordering information
Type number Package
Name Description Version
BAS16 - plastic surface-mounted package; 3 leads SOT23
BAS16H - plastic surface-mounted package; 2 leads SOD123F
BAS16J SC-90 plastic surface-mounted package; 2 leads SOD323F
BAS16L - leadless ultra small plastic package; 2 terminals;
body 1.0 ×0.6 ×0.5 mm SOD882
BAS16T SC-75 plastic surface-mounted package; 3 leads SOT416
BAS16VV - plastic surface-mounted package; 6 leads SOT666
BAS16VY SC-88 plastic surface-mounted package; 6 leads SOT363
BAS16W SC-70 plastic surface-mounted package; 3 leads SOT323
BAS316 SC-76 plastic surface-mounted package; 2 leads SOD323
BAS516 SC-79 plastic surface-mounted package; 2 leads SOD523
Table 5. Marking codes
Type number Marking code[1]
BAS16 A6*
BAS16H A1
BAS16J AR
BAS16L S2
BAS16T A6
BAS16VV 53
BAS16VY 16*
BAS16W A6*
BAS316 A6
BAS516 6
BAS16_SER_5 © NXP B.V. 2008. All rights reserved.
Product data sheet Rev. 05 — 25 August 2008 4 of 20
NXP Semiconductors BAS16 series
High-speed switching diodes
5. Limiting values
Table 6. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
Per diode
VRRM repetitive peak reverse
voltage - 100 V
VRreverse voltage - 100 V
IFforward current
BAS16 [1] - 215 mA
BAS16H
BAS16L [2] - 215 mA
BAS16T [1] - 155 mA
BAS16VV
BAS16VY [1][3] - 200 mA
BAS16W [1] - 175 mA
BAS16J
BAS316
BAS516
[1] - 250 mA
IFRM repetitive peak forward
current tp≤0.5 µs;
δ≤0.25 - 500 mA
IFSM non-repetitive peak forward
current square wave [4]
tp=1µs-4A
tp=1ms - 1 A
tp= 1 s - 0.5 A
Ptot total power dissipation
BAS16 Tamb ≤25 °C[1] - 250 mW
BAS16H Tamb ≤25 °C[2][5]
[6] - 380 mW
[5][6]
[7] - 830 mW
BAS16J Tamb ≤25 °C[5][6]
[7] - 550 mW
BAS16L Tamb ≤25 °C[2][5]
[6] - 250 mW
BAS16T Tsp ≤90 °C[1] - 170 mW
BAS16VV Tamb ≤25 °C[1][3]
[5][8] - 180 mW
BAS16VY Tsp ≤85 °C[1][3]
[8] - 250 mW
BAS16W Tamb ≤25 °C[1] - 200 mW
BAS316 Tsp ≤90 °C[1][6] - 400 mW
BAS516 Tsp ≤90 °C[1][5]
[6] - 500 mW
BAS16_SER_5 © NXP B.V. 2008. All rights reserved.
Product data sheet Rev. 05 — 25 August 2008 5 of 20
NXP Semiconductors BAS16 series
High-speed switching diodes
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
[2] Device mounted on an FR4 PCB with 60 µm copper strip line.
[3] Single diode loaded.
[4] Tj=25°C prior to surge.
[5] Reflow soldering is the only recommended soldering method.
[6] Soldering point of cathode tab.
[7] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2.
[8] Soldering points at pins 4, 5 and 6.
6. Thermal characteristics
Per device
Tjjunction temperature - 150 °C
Tamb ambient temperature −65 +150 °C
Tstg storage temperature −65 +150 °C
Table 6. Limiting values
…continued
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
Table 7. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
Rth(j-a) thermal resistance from
junction to ambient in free air
BAS16 [1] - - 500 K/W
BAS16H [2][3] - - 330 K/W
[3][4] - - 150 K/W
BAS16J [3][4] - - 230 K/W
BAS16L [2][3] - - 500 K/W
BAS16VV [2][3]
[5] - - 700 K/W
[3][4]
[5] - - 410 K/W
BAS16W [1] - - 625 K/W
Rth(j-t) thermal resistance from
junction to tie-point
BAS16 - - 330 K/W
BAS16W - - 300 K/W
BAS16_SER_5 © NXP B.V. 2008. All rights reserved.
Product data sheet Rev. 05 — 25 August 2008 6 of 20
NXP Semiconductors BAS16 series
High-speed switching diodes
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB with 60 µm copper strip line.
[3] Reflow soldering is the only recommended soldering method.
[4] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2.
[5] Single diode loaded.
[6] Soldering point of cathode tab.
[7] Soldering points at pins 4, 5 and 6.
7. Characteristics
[1] Pulse test: tp≤300 µs; δ≤0.02.
[2] When switched from IF= 10 mA to IR= 10 mA; RL= 100 Ω; measured at IR= 1 mA.
[3] When switched from IF= 10 mA; tr=20ns.
Rth(j-sp) thermal resistance from
junction to solder point
BAS16H [6] --70K/W
BAS16J [6] --55K/W
BAS16T - - 350 K/W
BAS16VY [5][7] - - 260 K/W
BAS316 [6] - - 150 K/W
BAS516 [6] - - 120 K/W
Table 7. Thermal characteristics
…continued
Symbol Parameter Conditions Min Typ Max Unit
Table 8. Characteristics
T
amb
=25
°
C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
Per diode
VFforward voltage [1]
IF= 1 mA - - 715 mV
IF= 10 mA - - 855 mV
IF=50mA --1V
IF= 150 mA - - 1.25 V
IRreverse current VR=25V --30nA
VR= 80 V - - 0.5 µA
VR= 25 V; Tj= 150 °C --30µA
VR= 80 V; Tj= 150 °C --50µA
Cddiode capacitance f = 1 MHz; VR=0V
BAS16; BAS16H;
BAS16J; BAS16L;
BAS16T; BAS16VV;
BAS16VY; BAS16W;
BAS316
- - 1.5 pF
BAS516 - - 1 pF
trr reverse recovery time [2] --4ns
VFR forward recovery voltage [3] - - 1.75 V
BAS16_SER_5 © NXP B.V. 2008. All rights reserved.
Product data sheet Rev. 05 — 25 August 2008 7 of 20
NXP Semiconductors BAS16 series
High-speed switching diodes
(1) Tamb = 150 °C
(2) Tamb =85°C
(3) Tamb =25°C
(4) Tamb =−40 °C
Based on square wave currents.
Tj=25°C; prior to surge
Fig 1. Forward current as a function of forward
voltage; typical values Fig 2. Non-repetitive peak forward current as a
function of pulse duration; maximum values
(1) Tamb = 150 °C
(2) Tamb =85°C
(3) Tamb =25°C
(4) Tamb =−40 °C
f = 1 MHz; Tamb =25°C
Fig 3. Reverse current as a function of reverse
voltage; typical values Fig 4. Diode capacitance as a function of reverse
voltage; typical values
006aab132
1
10
102
103
IF
(mA)
10−1
VF (V)
0 1.41.00.4 0.80.2 1.20.6
(1) (2) (3) (4)
mbg704
10
1
102
IFSM
(A)
10−1
tp (µs)
110
4
103
10 102
006aab133
102
IR
(µA)
VR (V)
0 1008040 6020
10
1
10−1
10−2
10−3
10−4
10−5
(1)
(2)
(3)
(4)
0816124
0.8
0.6
0
0.4
0.2
mbg446
VR (V)
Cd
(pF)
BAS16_SER_5 © NXP B.V. 2008. All rights reserved.
Product data sheet Rev. 05 — 25 August 2008 8 of 20
NXP Semiconductors BAS16 series
High-speed switching diodes
8. Test information
9. Package outline
(1) IR=1mA
Input signal: reverse pulse rise time tr= 0.6 ns; reverse voltage pulse duration tp= 100 ns; duty cycle δ= 0.05
Oscilloscope: rise time tr= 0.35 ns
Fig 5. Reverse recovery time test circuit and waveforms
Input signal: forward pulse rise time tr= 20 ns; forward current pulse duration tp≥100 ns; duty cycle δ≤0.005
Fig 6. Forward recovery voltage test circuit and waveforms
trr
(1)
+ IFt
output signal
trtpt
10 %
90 %
VR
input signal
V = VR + IF × RS
RS = 50 ΩIF
D.U.T.
Ri = 50 Ω
SAMPLING
OSCILLOSCOPE
mga881
trt
tp
10 %
90 %
I
input signal
RS = 50 Ω
I
Ri = 50 Ω
OSCILLOSCOPE
1 kΩ450 Ω
D.U.T.
mga882
VFR
t
output signal
V
Fig 7. Package outline BAS16 (SOT23/TO-236AB) Fig 8. Package outline BAS16H (SOD123F)
04-11-04Dimensions in mm
0.45
0.15
1.9
1.1
0.9
3.0
2.8
2.5
2.1 1.4
1.2
0.48
0.38 0.15
0.09
12
3
04-11-29Dimensions in mm
1.2
1.0
0.25
0.10
3.6
3.4 2.7
2.5
0.55
0.35
0.70
0.55
1.7
1.5
1
2
BAS16_SER_5 © NXP B.V. 2008. All rights reserved.
Product data sheet Rev. 05 — 25 August 2008 9 of 20
NXP Semiconductors BAS16 series
High-speed switching diodes
Fig 9. Package outline BAS16J (SOD323F/SC-90) Fig 10. Package outline BAS16L (SOD882)
Fig 11. Package outline BAS16T (SOT416/SC-75) Fig 12. Package outline BAS16VV (SOT666)
Fig 13. Package outline BAS16VY (SOT363) Fig 14. Package outline BAS16W (SOT323/SC-70)
04-09-13Dimensions in mm
0.80
0.65
0.25
0.10
0.5
0.3
2.7
2.3 1.8
1.6
0.40
0.25
1.35
1.15
1
2
03-04-17Dimensions in mm
0.55
0.47
0.65
0.62
0.55 0.50
0.46
cathode marking on top side
1.02
0.95
0.30
0.22
0.30
0.22
2
1
04-11-04Dimensions in mm
0.95
0.60
1.8
1.4
1.75
1.45 0.9
0.7
0.25
0.10
1
0.30
0.15
12
30.45
0.15
Dimensions in mm 04-11-08
1.7
1.5
1.7
1.5
1.3
1.1
1
0.18
0.08
0.27
0.17
0.5
pin 1 index
123
456
0.6
0.5
0.3
0.1
06-03-16Dimensions in mm
0.25
0.10
0.3
0.2
pin 1
index
1.3
0.65
2.2
2.0 1.35
1.15
2.2
1.8 1.1
0.8
0.45
0.15
132
465
04-11-04Dimensions in mm
0.45
0.15
1.1
0.8
2.2
1.8
2.2
2.0 1.35
1.15
1.3
0.4
0.3 0.25
0.10
12
3
BAS16_SER_5 © NXP B.V. 2008. All rights reserved.
Product data sheet Rev. 05 — 25 August 2008 10 of 20
NXP Semiconductors BAS16 series
High-speed switching diodes
10. Packing information
[1] For further information and the availability of packing methods, see Section 14.
[2] T1: normal taping
[3] T2: reverse taping
Fig 15. Package outline BAS316 (SOD323/SC-76) Fig 16. Package outline BAS516 (SOD523/SC-79)
03-12-17Dimensions in mm
0.25
0.10
0.45
0.15
2.7
2.3 1.8
1.6
0.40
0.25
1.1
0.8
1.35
1.15
1
2
02-12-13Dimensions in mm
1.65
1.55 1.25
1.15
0.17
0.11
0.34
0.26
0.65
0.58
0.85
0.75
1
2
Table 9. Packing methods
The indicated -xxx are the last three digits of the 12NC ordering code.
[1]
Type number Package Description Packing quantity
3000 4000 8000 10000
BAS16 SOT23 4 mm pitch, 8 mm tape and reel -215 - - -235
BAS16H SOD123F 4 mm pitch, 8 mm tape and reel -115 - - -135
BAS16J SOD323F 4 mm pitch, 8 mm tape and reel -115 - - -135
BAS16L SOD882 2 mm pitch, 8 mm tape and reel - - - -315
BAS16T SOT416 4 mm pitch, 8 mm tape and reel -115 - - -135
BAS16VV SOT666 2 mm pitch, 8 mm tape and reel - - -315 -
4 mm pitch, 8 mm tape and reel - -115 - -
BAS16VY SOT363 4 mm pitch, 8 mm tape and reel; T1 [2] -115 - - -135
4 mm pitch, 8 mm tape and reel; T2 [3] -125 - - -165
BAS16W SOT323 4 mm pitch, 8 mm tape and reel -115 - - -135
BAS316 SOD323 4 mm pitch, 8 mm tape and reel -115 - - -135
BAS516 SOD523 2 mm pitch, 8 mm tape and reel - - -315 -
4 mm pitch, 8 mm tape and reel -115 - - -135
BAS16_SER_5 © NXP B.V. 2008. All rights reserved.
Product data sheet Rev. 05 — 25 August 2008 11 of 20
NXP Semiconductors BAS16 series
High-speed switching diodes
11. Soldering
Fig 17. Reflow soldering footprint BAS16 (SOT23/TO-236AB)
Fig 18. Wave soldering footprint BAS16 (SOT23/TO-236AB)
solder lands
solder resist
occupied area
solder paste
sot023_fr
0.5
(3×)
0.6
(3×)
0.6
(3×)
0.7
(3×)
3
1
3.3
2.9
1.7
1.9
2
Dimensions in mm
solder lands
solder resist
occupied area
preferred transport direction during soldering
sot023_fw
2.8
4.5
1.4
4.6
1.4
(2×)
1.2
(2×)
2.2
2.6
Dimensions in mm
BAS16_SER_5 © NXP B.V. 2008. All rights reserved.
Product data sheet Rev. 05 — 25 August 2008 12 of 20
NXP Semiconductors BAS16 series
High-speed switching diodes
Reflow soldering is the only recommended soldering method.
Dimensions in mm
Fig 19. Reflow soldering footprint BAS16H (SOD123F)
Reflow soldering is the only recommended soldering method.
Fig 20. Reflow soldering footprint BAS16J (SOD323F)
1.6
1.6
2.9
4
4.4
1.1 1.22.1
1.1
(2×)
solder lands
solder resist
occupied area
solder paste
0.951.65
2.2
2.1
3.05
solder lands
solder resist
occupied area
solder paste
Dimensions in mm
0.5
(2×)
0.6
(2×)
0.6 (2×)0.5 (2×)
sod323f_fr
BAS16_SER_5 © NXP B.V. 2008. All rights reserved.
Product data sheet Rev. 05 — 25 August 2008 13 of 20
NXP Semiconductors BAS16 series
High-speed switching diodes
Reflow soldering is the only recommended soldering method.
Fig 21. Reflow soldering footprint BAS16L (SOD882)
Fig 22. Reflow soldering footprint BAS16T (SOT416/SC-75)
solder lands
solder resist
occupied area
solder paste
sod882_fr
0.9
0.3
(2×)
R0.05 (8×)
0.6
(2×) 0.7
(2×)
0.4
(2×)
1.3
0.7
Dimensions in mm
solder lands
solder resist
occupied area
solder paste
sot416_fr
0.85
1.7
2.2
2
0.5
(3×)
0.6
(3×)
1
1.3
Dimensions in mm
BAS16_SER_5 © NXP B.V. 2008. All rights reserved.
Product data sheet Rev. 05 — 25 August 2008 14 of 20
NXP Semiconductors BAS16 series
High-speed switching diodes
Reflow soldering is the only recommended soldering method.
Fig 23. Reflow soldering footprint BAS16VV (SOT666)
Fig 24. Reflow soldering footprint BAS16VY (SOT363/SC-88)
solder lands
placement area
occupied area
solder paste
sot666_fr
2.75
2.45
2.1
1.6
0.4
(6×)
0.55
(2×)
0.25
(2×)
0.6
(2×)
0.65
(2×)
0.3
(2×)
0.325
(4×)
0.45
(4×)
0.5
(4×)
0.375
(4×)
1.72
1.7
1.0750.538
Dimensions in mm
solder lands
solder resist
occupied area
solder paste
sot363_fr
2.65
2.35 0.4 (2×)
0.6
(2×)
0.5
(4×)
0.5
(4×)
0.6
(4×)
0.6
(4×)
1.5
1.8
Dimensions in mm
BAS16_SER_5 © NXP B.V. 2008. All rights reserved.
Product data sheet Rev. 05 — 25 August 2008 15 of 20
NXP Semiconductors BAS16 series
High-speed switching diodes
Fig 25. Wave soldering footprint BAS16VY (SOT363/SC-88)
Fig 26. Reflow soldering footprint BAS16W (SOT323/SC-70)
sot363_fw
solder lands
solder resist
occupied area
preferred transport
direction during soldering
5.3
1.3 1.3
1.5
0.3
1.5
4.5
2.45
2.5
Dimensions in mm
solder lands
solder resist
occupied area
solder paste
sot323_fr
2.65
2.35 0.6
(3×)
0.5
(3×)
0.55
(3×)
1.325
1.85
1.3
3
2
1
Dimensions in mm
BAS16_SER_5 © NXP B.V. 2008. All rights reserved.
Product data sheet Rev. 05 — 25 August 2008 16 of 20
NXP Semiconductors BAS16 series
High-speed switching diodes
Fig 27. Wave soldering footprint BAS16W (SOT323/SC-70)
Fig 28. Reflow soldering footprint BAS316 (SOD323/SC-76)
sot323_fw
3.65 2.1
1.425
(3×)
4.6
09
(2×)
2.575
1.8
solder lands
solder resist
occupied area
preferred transport
direction during soldering
Dimensions in mm
0.951.65
2.2
2.1
3.05
solder lands
solder resist
occupied area
solder paste
0.5
(2×)
0.6
(2×)
0.6 (2×)0.5 (2×)
sod323_fr
Dimensions in mm
BAS16_SER_5 © NXP B.V. 2008. All rights reserved.
Product data sheet Rev. 05 — 25 August 2008 17 of 20
NXP Semiconductors BAS16 series
High-speed switching diodes
Fig 29. Wave soldering footprint BAS316 (SOD323/SC-76)
Reflow soldering is the only recommended soldering method.
Fig 30. Reflow soldering footprint BAS516 (SOD523/SC-79)
1.5 (2×)
2.9
5
1.2
(2×)
2.75
sod323_fw
solder lands
solder resist
occupied area
preferred transport
direction during soldering
Dimensions in mm
solder lands
solder resist
occupied area
solder paste
Dimensions in mm
0.6
(2×)
0.5
(2×)
2.15
1.1
0.7
(2×)
0.8
(2×)
1.2
sod523_fr
BAS16_SER_5 © NXP B.V. 2008. All rights reserved.
Product data sheet Rev. 05 — 25 August 2008 18 of 20
NXP Semiconductors BAS16 series
High-speed switching diodes
12. Revision history
Table 10. Revision history
Document ID Release date Data sheet status Change notice Supersedes
BAS16_SER_5 20080825 Product data sheet - BAS16_4
BAS16H_1
BAS16J_1
BAS16L_1
BAS16T_1
BAS16VV_BAS16VY_3
BAS16W_4
BAS316_4
BAS516_1
Modifications: •The format of this data sheet has been redesigned to comply with the new identity
guidelines of NXP Semiconductors.
•Legal texts have been adapted to the new company name where appropriate.
•Table 5 “Marking codes”: marking code amended for BAS16W
•Table 6 “Limiting values”: for BAS16, BAS16T, BAS16W and BAS516 change of
VRRM maximum value from 85 V to 100 V
•Table 6 “Limiting values”: for BAS16, BAS16L, BAS16T, BAS16W and BAS516 change of
VRmaximum value from 75 V to 100 V
•Table 8 “Characteristics”: change of IRcondition VR from 75 V to 80 V for Tj=25°C
•Table 8 “Characteristics”: change of IRmaximum value from 1.0 µAto0.5µA for VR=80V
and Tj=25°C
•Table 8 “Characteristics”: change of IRcondition VR from 75 V to 80 V for Tj= 150 °C
•Section 13 “Legal information”: updated
BAS16_4 20011010 Product specification - BAS16_3
BAS16H_1 20050415 Product data sheet - -
BAS16J_1 20070308 Product data sheet - -
BAS16L_1 20030623 Product specification - -
BAS16T_1 19980120 Product specification - -
BAS16VV_BAS16VY_3 20070420 Product data sheet - BAS16VV_BAS16VY_2
BAS16W_4 19990506 Product specification - BAS16W_3
BAS316_4 20040204 Product specification - BAS316_3
BAS516_1 19980831 Product specification - -
BAS16_SER_5 © NXP B.V. 2008. All rights reserved.
Product data sheet Rev. 05 — 25 August 2008 19 of 20
NXP Semiconductors BAS16 series
High-speed switching diodes
13. Legal information
13.1 Data sheet status
[1] Please consult the most recently issued document before initiating or completing a design.
[2] The term ‘short data sheet’ is explained in section “Definitions”.
[3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
13.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
13.3 Disclaimers
General — Information in this document is believed to be accurate and
reliable. However, NXP Semiconductors does not give any representations or
warranties, expressed or implied, as to the accuracy or completeness of such
information and shall have no liability for the consequences of use of such
information.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) may cause permanent
damage to the device. Limiting values are stress ratings only and operation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.
Terms and conditions of sale — NXP Semiconductors products are sold
subject to the general terms and conditions of commercial sale, as published
at http://www.nxp.com/profile/terms, including those pertaining to warranty,
intellectual property rights infringement and limitation of liability, unless
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of
any inconsistency or conflict between information in this document and such
terms and conditions, the latter will prevail.
No offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
grant, conveyance or implication of any license under any copyrights, patents
or other industrial or intellectual property rights.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
13.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
14. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Document status[1][2] Product status[3] Definition
Objective [short] data sheet Development This document contains data from the objective specification for product development.
Preliminary [short] data sheet Qualification This document contains data from the preliminary specification.
Product [short] data sheet Production This document contains the product specification.
NXP Semiconductors BAS16 series
High-speed switching diodes
© NXP B.V. 2008. All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 25 August 2008
Document identifier: BAS16_SER_5
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
15. Contents
1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.1 General description. . . . . . . . . . . . . . . . . . . . . . 1
1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.4 Quick reference data. . . . . . . . . . . . . . . . . . . . . 2
2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 2
3 Ordering information. . . . . . . . . . . . . . . . . . . . . 3
4 Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
5 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 4
6 Thermal characteristics. . . . . . . . . . . . . . . . . . . 5
7 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 6
8 Test information. . . . . . . . . . . . . . . . . . . . . . . . . 8
9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 8
10 Packing information. . . . . . . . . . . . . . . . . . . . . 10
11 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
12 Revision history. . . . . . . . . . . . . . . . . . . . . . . . 18
13 Legal information. . . . . . . . . . . . . . . . . . . . . . . 19
13.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 19
13.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
13.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 19
13.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 19
14 Contact information. . . . . . . . . . . . . . . . . . . . . 19
15 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
