DIL BOX70J BCX70K SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N silicon transistors Marking PACKAGE OUTLINE DETAILS BCX70G = AG ALL DIMENSIONS IN mm BCX70H = AH BCX70J = AJ BCX70K = AK Pin configuration 1= BASE 2= EMITTER 3 = COLLECTOR 3 2 ABSOLUTE MAXIMUM RATINGS Collector-emitter voltage (VBE = 0) Vcgs max. 45 V Collector-emitter voltage (open base) VCEOQ max. 45 V Collector current (d.c.) Ic max. 200 mA Total power dissipation at Tamb = 25 C Prot max. 250 mW Junction temperature Tj max. 150 C Transition frequency at f = 100 MHz VcE=5V;Ic=10 mA fr typ. 250 MHz Noise figure at f: 1 kHz VcE = 5 V; Ic; 200 1A; B = 200 Hz F typ. 2 dB RATINGS (at Ta = 25C unless otherwise specified) Limiting values Collector-emitter voltage (VBE = 0) VCES max. 45 V Collector-emitter voltage (open base) VCEQ max. 45 V Emitter-base voltage (open collector) VEBO max. 5 .V 65CDIL BCX70G BCX70H BCX70J BCX70K Collector current (d.c.) Ic max. 200 mA Base current lp max. 50 mA Total power dissipation up to Tamb = 25 C Prot max. 250 mW Storage temperature Tstg - -55 to +150 C Junction temperature Tj max. 150 C THERMAL RESISTANCE From junction to ambient Rthj-a = 500 K/W CHARACTERISTICS Tamb: 25 C unless otherwise specified Collector-emitter cut-off current VBE = 0; Vcg = 45 V / IcES < 20 nA. VBE = 0; Vcg = 45 V; Tamb = 150 C IcES < 20 pA Emitterbase cut-off current Ic = 0; Vep =4V Ippo < 20 nA Saturation voltages at Ic = 10 mA; Ig = 0,25 mA VcEsat 0,05 to 0,35 V VpEsat 0,6 to 0,85 V at Ic = 50 mA; Ip = 1,25 mA VcEsat 0,1 to 0,55 V VBEsat 0,7 to 1,05 V Transition frequency at f = 100 MHz A > 125 MHz Ic = 10 mA; VcR=5 V fy typ. 250 MHz Collector capacitance at f = 1 MHz Ig =le = 0; Vcgp =10V Ce typ. 2,5 pF Emitter capacitance at f = 1 MHz Ic =I, = 0; Vep = 0,5 V Ce typ. 8 pF Noise figure at Rg = 2 kQ, typ. 2 dB Ic = 200 pA; Vcg = 5 V; f = 1 kHz; B = 200 Hz F < 6 dB BCX70G 70H 70J 70K D.C. current gain Veg = 5V;1C = 10nA hep > | 40 30 | 100 VcE=5V;Ic=2mA hee > 120 | 180 250 } 380 < 220 | 310 460 | 630 VcE=1V;Ic = 50 mA hppE > 50 | 70 | 90 | 100 Small-signal current gain > 125 | 175 | 250 | 350 VCE = 5 V; IC = 2 mA; f =1 kHz hfe < 250 | 350 | 500 | 700 Output admittance VCE = 5 V; IC = 2 mA; f=1 kHz hoe typ. 18 24 30 50 pS Base-emitter voltage Ver =5V:Ic=2mA Vv 0,55 to 0.75 Vv ceeowee BE typ. 0,65 Vv VcgE=5V;Ic =10 pA VBE typ. 0,52 Vv Veg =1V;Ic = 50 mA VBE typ. 0,78 V 66