©2009 Fairchild Semiconductor Corporation
ISL9R860P2, ISL9R860S3ST
ISL9R860P2, ISL9R860S3ST Rev. C2
ISL9R860P2, ISL9R860S3ST
8A, 600V Stealth™ Diode
General Description
The ISL9R860P2, ISL9R860S2 and ISL9R860S3S are
Stealth™ diodes optimized for low loss performance in
high frequency hard switched applications. The
Stealth™ family exhibits low reverse recovery current
(IRRM) and exceptionally soft recovery under typical
operating conditions.
This device is intended for use as a free wheeling or
boost diode in power supplies and other power
switching applications. The low IRRM and short ta phase
reduce loss in switching transistors. The soft recovery
minimizes ringing, expanding the range of conditions
under which the diode may be operated without the use
of additional snubber circuitry. Consider using the
Stealth™ diode with an SMPS IGBT to provide the
most efficient and highest power density design at
lower cost.
Formerly developmental type TA49409.
Features
• Soft Recovery . . . . . . . . . . . . . . . . . . . tb/ ta > 2.5
• Fast Recovery . . . . . . . . . . . . . . . . . . . . trr < 25ns
• Operating Temperature . . . . . . . . . . . . . . . 175oC
• Reverse Voltage. . . . . . . . . . . . . . . . . . . . . . 600V
• Avalanche Energy Rated
Applications
• Switch Mode Power Supplies
• Hard Switched PFC Boost Diode
• UPS Free Wheeling Diode
• Motor Drive FWD
• SMPS FWD
• Snubber Diode
Device Maximum Ratings TC= 25°C unless otherwise noted
Symbol Parameter Ratings Units
VRRM Peak Repetitive Reverse Voltage 600 V
VRWM Working Peak Reverse Voltage 600 V
VRDC Blocking Voltage 600 V
IF(AV) Average Rectified Forward Current (TC = 147oC) 8 A
IFRM Repetitive Peak Surge Current (20kHz Square Wave) 16 A
IFSM Nonrepetitive Peak Surge Current (Halfwave 1 Phase 60Hz) 100 A
PDPower Dissipation 85 W
EAVL Avalanche Energy (1A, 40mH) 20 mJ
TJ, TSTG Operating and Storage Temperature Range -55 to 175 °C
TL
TPKG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s
Package Body for 10s, See Techbrief TB334
300
260
°C
°C
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and
operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
K
A
CATHODE
(FLANGE)
CATHODE
ANODE
JEDEC TO-220AC
CATHODE
(FLANGE)
ANODE
N/C
JEDEC TO-263AB
Package Symbol
October 2009
©2009 Fairchild Semiconductor Corporation ISL9R860P2, ISL9R860S3ST Rev. C2
ISL9R860P2, ISL9R860S3ST
Package Marking and Ordering Information
Electrical Characteristics TC = 25°C unless otherwise noted
Off State Characteristics
On State Characteristics
Dynamic Characteristics
Switching Characteristics
Thermal Characteristics
Device Marking Device Package Tape Width Quantity
R860P2 ISL9R860P2 TO-220AC - -
R860S3S ISL9R860S3ST TO-263AB 24mm 800
Symbol Parameter Test Conditions Min Typ Max Units
IRInstantaneous Reverse Current VR = 600V TC = 25°C - - 100 µA
TC = 125°C - - 1.0 mA
VFInstantaneous Forward Voltage IF= 8A TC = 25°C - 2.0 2.4 V
TC = 125°C - 1.6 2.0 V
CJJunction Capacitance VR= 10V, IF = 0A - 30 - pF
trr Reverse Recovery Time IF = 1A, dIF/dt = 100A/µs, VR = 30V - 18 25 ns
IF = 8A, dIF/dt = 100A/µs, VR = 30V - 21 30 ns
trr Reverse Recovery Time IF = 8A,
dIF/dt = 200A/µs,
VR = 390V, TC = 25°C
-28-ns
IRRM Maximum Reverse Recovery Current - 3.2 - A
QRR Reverse Recovery Charge - 50 - nC
trr Reverse Recovery Time IF = 8A,
dIF/dt = 200A/µs,
VR = 390V,
TC = 125°C
-77-ns
S Softness Factor (tb/ta)-3.7-
IRRM Maximum Reverse Recovery Current - 3.4 - A
QRR Reverse Recovery Charge - 150 - nC
trr Reverse Recovery Time IF = 8A,
dIF/dt = 600A/µs,
VR = 390V,
TC = 125°C
-53-ns
S Softness Factor (tb/ta)-2.5-
IRRM Maximum Reverse Recovery Current - 6.5 - A
QRR Reverse Recovery Charge 195 - nC
dIM/dt Maximum di/dt during tb- 500 - A/µs
RθJC Thermal Resistance Junction to Case - - 1.75 °C/W
RθJA Thermal Resistance Junction to Ambient TO-220 - - 62 °C/W
RθJA Thermal Resistance Junction to Ambient TO-263 62 °C/W
©2009 Fairchild Semiconductor Corporation ISL9R860P2, ISL9R860S2, ISL9R860S3ST Rev. C2
ISL9R860P2, ISL9R860S3ST
Typical Performance Curves
Figure 1. Forward Current vs Forward Voltage Figure 2. Reverse Current vs Reverse Voltage
Figure 3. ta and tb Curves vs Forward Current Figure 4. ta and tb Curves vs dIF/dt
Figure 5. Maximum Reverse Recovery Current vs
Forward Current
Figure 6. Maximum Reverse Recovery Current vs
dIF/dt
VF, FORWARD VOLTAGE (V)
IF, FORWARD CURRENT (A)
0 0.5 0.75 1 2.50.25 1.5 2 2.25
0
2
4
6
8
10
12
14
16
2.75
25oC
175oC
150oC
100oC
125oC
1.751.25
VR, REVERSE VOLTAGE (V)
IR, REVERSE CURRENT (µA)
100
10
1
100 200 300 500 600400
0.1
25oC
175oC
150oC
125oC
100oC
IF, FORWARD CURRENT (A)
0
0
10
20
30
40
50
60
10 16
t, RECOVERY TIMES (ns)
70
80
2 4 6 8 12 14
VR = 390V, TJ = 125°C
tb AT d I F/dt = 200A/µs, 500A/µs, 800A/µs
ta AT dIF/dt = 200A/µs, 500A/µs, 800A/µs
dIF/dt, CURRENT RATE OF CHANGE (A/µs)
100
0
10
20
30
40
50
60
700 1000
t, RECOVERY TIMES (ns)
200 300 400 500 600 800 900
70
80
90
VR = 390V, TJ = 125°C
tb AT IF = 16A, 8A, 4A
ta AT IF = 16A, 8A, 4A
IF, FORWARD CURRENT (A)
0
2
3
4
5
6
7
8
16
IRRM , MAX REVERSE RECOVERY CURRENT (A)
dIF/dt = 800A/µs
dIF/dt = 500A/µs
dIF/dt = 200A/µs
VR = 390V, TJ = 125°C
9
10
11
2 4 6 8 10 12 14
dIF/dt, CURRENT RATE OF CHANGE (A/µs)
100
0
2
4
6
8
10
700 1000
IRRM , MAX REVERSE RECOVERY CURRENT (A)
VR = 390V, TJ = 125°C
IF = 16A
IF = 8A
IF = 4A
12
14
200 300 400 500 600 800 900
©2009 Fairchild Semiconductor Corporation ISL9R860P2, ISL9R860S2, ISL9R860S3ST Rev. C2
ISL9R860P2, ISL9R860S2, ISL9R860S3ST
Figure 7. Reverse Recovery Softness Factor vs dIF/dt Figure 8. Reverse Recovery Charge vs dIF/dt
Figure 9. Junction Capacitance vs Reverse Voltage Figure 10. DC Current Derating Curve
Figure 11. Normalized Maximum Transient Thermal Impedance
Typical Performance Curves (Continued)
dIF/dt, CURRENT RATE OF CHANGE (A/µs)
100
1
2
3
4
5
6
700 1000
VR = 390V, TJ = 125°C
IF = 16A
IF = 8A
IF = 4A
S, REVERSE RECOVERY SOFTNESS FACTOR
200 300 400 500 600 800 900
dIF/dt, CURRENT RATE OF CHANGE (A/µs)
50
100
150
200
250
300
350
VR = 390V, TJ = 125°C
IF = 16A
IF = 8A
IF = 4A
QRR, REVERSE RECOVERY CHARGE (nC)
100 700 1000200 300 400 500 600 800 900
VR, REVERSE VOLTAGE (V)
CJ, JUNCTION CAPACITANCE (pF)
0
200
400
600
800
1000
1200
0.1 100101
4
0150 155 165140 175160
6
8
10
TC, CASE TEMPERATURE (oC)
IF(AV), AVERAGE FORWARD CURRENT (A)
170145
2
t, RECTANGULAR PULSE DURATION (s)
10-5 10-2 10-1
ZθJA, NORMALIZED
THERMAL IMPEDANCE
0.01
10-4 10-3
SINGLE PULSE
100
0.1
101
DUTY CYCLE - DESCENDING ORDER
0.5
0.2
0.1
0.05
0.01
0.02
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJA x RθJA + TA
PDM
t1
t2
1.0
©2009 Fairchild Semiconductor Corporation ISL9R860P2, ISL9R860S3ST Rev. C2
ISL9R860P2, ISL9R860S3ST
Test Circuits and Waveforms
Figure 12. trr Test Circuit Figure 13. trr Waveforms and Definitions
Figure 14. Avalanche Energy Test Circuit Figure 15. Avalanche Current and Voltage
Waveforms
RG
L
VDD
MOSFET
CURRENT
SENSE
DUT
VGE
t1
t2
VGE AMPLITUDE AND
t1 AND t2 CONTROL IF
RG CONTROL dIF/dt
+
-
dt
dIF
IF
trr
tatb
0
IRM
0.25 IRM
DUT
CURRENT
SENSE
+
LR
VDD
R < 0.1Ω
EAVL = 1/2LI2 [VR(AVL)/(VR(AVL) - VDD)]
Q1 = IGBT (BVCES > DUT VR(AVL))
-
Q1
I = 1A
L = 40mH
VDD = 50V
IV
t0t1t2
IL
VAVL
t
IL
ISL9R860P2, ISL9R860S3ST
Mechanical Dimensions
TO-220AC
Dimensions in Millimeters
ISL9R860P2, ISL9R860S3ST
Mechanical Dimensions
TO-263AB
Dimensions in Millimeters
LAND PATTERN RECOMMENDATION
DETAIL A, ROTATED 90
SCALE: 2X
2
SEATING
PLANE
3
4
GAGE PLANE
1
2
1
4
3
SEE
DETAIL A
10.67
9.65 1.68
1.00
9.65
8.38
1.78 MAX
1.78
1.14
0.99
0.51
5.08
(2.12)
6.22 MIN
6.86 MIN
15.88
14.61
1.65
1.14
4.83
4.06
0.74
0.33 8
0
8
0
2.79
1.78
(5.38)
0.25 MAX
0.25
0.25 AB
M M
-A-
-B-
0.10 B
NOTES: UNLESS OTHERWISE SPECIFIED
A) ALL DIMENSIONS ARE IN MILLIMETERS.
B) REFERENCE JEDEC, TO-263, VARIATION AB.
C) DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M - 1994.
D) LOCATION OF THE PIN HOLE MAY VARY
(LOWER LEFT CORNER, LOWER CENTER
AND CENTER OF THE PACKAGE).
E) LANDPATTERN RECOMMENDATION PER IPC
TO254P1524X482-3N
F) FILENAME: TO263A02REV6
12.70
9.45
3.80
1.05
(6.40)
10.00
UNLESS NOTED, ALL DIMS TYPICAL
5.08
ISL9R860P2, ISL9R860S3ST
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THEREIN, WHICH COVERS THESE PRODUCTS.
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As used herein:
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PRODUCT STATUS DEFINITIONS
Definition of Terms
AccuPower™
Auto-SPM™
Build it Now™
CorePLUS™
CorePOWER™
CROSSVOLT™
CTL™
Current Transfer Logic™
EcoSPARK®
EfficentMax™
EZSWITCH™*
™*
Fairchild®
Fairchild Semiconductor®
FACT Quiet Series™
FACT®
FAST®
FastvCore™
FETBench™
FlashWriter® *
FPS™
F-PFS™
FRFET®
Global Power ResourceSM
Green FPS™
Green FPS™ e-Series™
Gmax™
GTO™
IntelliMAX™
ISOPLANAR™
MegaBuck™
MICROCOUPLER™
MicroFET™
MicroPak™
MillerDrive™
MotionMax™
Motion-SPM™
OPTOLOGIC®
OPTOPLANAR®
®
PDP SPM™
Power-SPM™
PowerTrench®
PowerXS™
Programmable Active Droop™
QFET®
QS™
Quiet Series™
RapidConfigure™
™
Saving our world, 1mW /W /kW at a time™
SmartMax™
SMART START™
SPM®
STEALTH™
SuperFET™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SupreMOS™
SyncFET™
Sync-Lock™
®*
The Power Franchise®
®
TinyBoost™
TinyBuck™
TinyCalc™
TinyLogic®
TINYOPTO™
TinyPower™
TinyPWM™
TinyWire™
TriFault Detect™
TRUECURRENT™*
UHC®
Ultra FRFET™
UniFET™
VCX™
VisualMax™
XS™
®
tm
tm
Datasheet Identification Product Status Definition
Advance Information Formative / In Design Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Preliminary First Production
Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.
No Identification Needed Full Production Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.
Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild
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Rev. I41
