MICROPAC INDUSTRIES, INC.
OPTOELECTRONIC PRODUCTS DIVISION
•
••
•
725 E.Walnut St., Garland, TX 75040
•
••
•
(972)272-3571
•
••
•
Fax (972)487-6918
www.micropac.com
E-MAIL: OPTOSALES @ MICROPAC.COM
4N22A
4N23A
JAN, JANTX, JANTXV, AND JANS SINGLE CHANNEL OPTOCOUPLERS
4N24A
OPTOELECTRONIC PRODUCTS
DIVISION
01/14/2011
Features:
• Qualified to MIL-PRF-19500/486
• Collector is electrically isolated from the case
• Overall current gain: 1.5 typical (4N24A)
• Base lead provided for conventional transistor
biasing
• Rugged package
• High gain, high voltage transistor
• ±1 kV electrical isolation
Applications:
• Eliminate ground loops
• Level shifting
• Line receiver
• Switching power supplies
• Motor control
DESCRIPTION
A Gallium Aluminum Arsenide (GaAlAs) infrared LED and a high gain N-P-N silicon phototransistor packaged in a
hermetically sealed metal case. The 4N22A, 4N23A, and 4N24A differ from the 4N22, 4N23, and 4N24 only in that the
collector of the transistor is isolated from the case. The 4N22A, 4N23A and 4N24A can be tested to customer specifications.
*AB S O LUT E MAX IMUM R AT I NGS
Input to Output Voltage .......................................................................................................................................................
±
1 kV
Emitter-Collector Voltage ..................................................................................................... .................................................... 7 V
Collector-Emitter Voltage ..................................................................................................... .................................................. 40 V
Collector-Base Voltage .......................................................................................................................................................... 45 V
Reverse Input Voltage ........................................................................................................ .................................................... 2 V
Input Diode Continuous Forward Current at (or below) 25°C Free-Air Temperature (see note 1) ................................... 40 mA
Peak Forward Input Current (Value applies for tw
<
1
µ
s PRR
<
300 pps) ............................................................................. 1 A
Continuous Collector Current ............................................................................................................................................. 50 mA
Continuous Transistor Power Dissipation at (or below) 25°C Free-Air Temperature (see Note 2) ............................... 300 mW
Storage Temperature .......................................................................................................................................... -65°C to +125°C
Operating Free-Air Temperature Range ............................................................................................................ -55°C to +125°C
Lead Solder Temperature (10 seconds max., 1/16” from case) ........................................................................................ 240°C
Notes:
1. Derate linearly to 125°C free-air tem per ature at the rate of 0.40 mA/°C abov e 65°C.
2. Derate linearly to 125°C free-air tem per ature at the rate of 5 mW/°C above 65°C.
•
JEDEC registered data
Package Dimensions Schemat ic Diagram
K 7
A 5 3 C
1 E
Ø0.370 [9.40]
Ø0.336 [8.53]
Ø0.335 [8.51]
Ø0.305 [7.75]
0.185 [4.70]
0.155 [3.94]
0.500 [12.70] MIN
0.040 [1.02] MAX
0.045 [1.14]
0.029 [0.73]
0.034 [0.86]
0.028 [0.71]
45°
Ø0.200 [5.08]
6 LEADS
Ø0.019 [0.48]
Ø0.016 [0.41]
7
3
5
6
12
ALL LINEAR DIMENSIONS ARE IN INCHES [MILLIMETERS].
2 B
COLLECTOR IS COMMON TO CASE.
THE COLLECTOR OF THE TRANSISTOR IS
ISOLATED FROM THE CASE.
MICROPAC INDUSTRIES, INC.
OPTOELECTRONIC PRODUCTS DIVISION
•
••
•
725 E.Walnut St., Garland, TX 75040
•
••
•
(972)272-3571
•
••
•
Fax (972)487-6918
www.micropac.com
E-MAIL: OPTOSALES @ MICROPAC.COM
4N22A, 4N23A, and 4N24A
JAN, JANTX, JANTXV, AND JANS SINGLE CHANNEL
OPTOCOUPLERS
01/14/2011
*ELECTRICA L CHARA CTERISTICS INPUT LED
T
A
= 25
°
C Unless otherwise specified
PARAMETER SYMBOL MIN MAX UNITS TEST CONDITIONS NOTE
Input Diode Static Reverse Current I
R
100 nA V
R
= 2 V
Input Diode Static Forward Voltage -55
°
C
+25
°
C
+125
°
C
V
F
1
0.8
0.7
1.7
1.5
1.3
V
I
F
= 10 mA
*OU TP UT TR ANSISTO R
T
A
= 25
°
C Unless otherwise specified
PARAMETER SYMBOL MIN MAX UNITS TEST CONDITIONS NOTE
Collector-Base Breakdown Voltage V
(BR)CBO
45 V I
C
= 100 µA, I
E
= 0, I
F
= 0
Collector-Emitt er Breakdown Voltage V
(BR)CEO
40 V I
C
= 1 mA, I
B
= 0, I
F
= 0
Emitter-Base Break down Voltage V
(
BR
)
EBO
7 V I
B
= 0, I
E
= 100 µA, I
F
= 0
*COUPLED CHARACTERISTICS
T
A
= 25
°
C Unless otherwise specified
PARAMETER SYMBOL MIN MAX UNITS TEST CONDITIONS NOTE
On State Collector Current 4N22A
4N23A
4N24A I
C(ON)
0.15
0.2
0.4 mA V
CE
= 5 V, I
B
= 0, I
F
= 2 mA
On State Collector Current 4N22A
4N23A
4N24A I
C(ON)
2.5
6
10 mA V
CE
= 5 V, I
B
= 0, I
F
= 10 mA
On State Collector Current 4N22A
-55
°
C 4N23A
4N24A I
C(ON)
1
2.5
4 mA V
CE
= 5 V, I
B
= 0, I
F
= 10 mA
On State Collector Current 4N22A
+100
°
C 4N23A
4N24A I
C(ON)
1
2.5
4 mA V
CE
= 5 V, I
B
= 0, I
F
= 10 mA
Off State Collect or Current +25
°
C I
C(OFF)
100 nA V
CE
= 20 V, I
B
= 0, I
F
= 0 mA
Off State Collect or Current +100
°
C I
C(OFF)
100 µA V
CE
= 20 V, I
B
= 0, I
F
= 0 mA
Collector-Emitter Saturation Voltage 4N22A
4N23A
4N24A
V
CE(SAT)
V
CE(SAT)
V
CE
(
SAT
)
0.3
0.3
0.3
V
V
V
I
C
= 2.5 mA, I
B
= 0, I
F
= 20 mA
I
C
= 5 mA, I
B
= 0, I
F
= 20 mA
I
C
= 10 mA, I
B
= 0, I
F
= 20 mA
Input to Output Resis t anc e ALL R
I-O
10
11
Ω V
IN-OUT
= 1 kV 1
Input to Output Capacit anc e ALL C
I-O
5 pF F = 1 MHz, V
IN-OUT
= 1 kV 1
Rise Time 4N22A
4N23A
4N24A
t
r
15
15
20
µs
V
CC
= 10 V, I
F
= 10 mA, R
L
= 100 Ω
Fall Time 4N22A
4N23A
4N24A
t
f
15
15
20
µs
V
CC
= 10 V, I
F
= 10 mA, R
L
= 100 Ω
NOTES:
1. These parameters are measured between all phototransistor leads shorted together and with both input diode leads shorted together.
RECOMMENDED OPERATING CONDITIONS:
PARAMETER SYMBOL MIN MAX UNITS
Input Current, Low Level I
FL
0 1 µA
Input Current, High Level I
FH
2 10 mA
Supply Voltage V
CC
5 10 V
MICROPAC INDUSTRIES, INC.
OPTOELECTRONIC PRODUCTS DIVISION
•
••
•
725 E.Walnut St., Garland, TX 75040
•
••
•
(972)272-3571
•
••
•
Fax (972)487-6918
www.micropac.com
E-MAIL: OPTOSALES @ MICROPAC.COM
4N22A, 4N23A, and 4N24A
JAN, JANTX, JANTXV, AND JANS SINGLE CHANNEL
OPTOCOUPLERS
01/14/2011
SELECTION GUIDE
PART NUMBER PART DESCRIPTION
4N22A Commercial
4N23A Commercial
4N24A Commercial
JAN4N22A JAN Screened
JAN4N23A JAN Screened
JAN4N24A JAN Screened
JANTX4N22A JANTX Screened
JANTX4N23A JANTX Screened
JANTX4N24A JANTX Screened
JANTXV4N22A JANTXV Screened
JANTXV4N23A JANTXV Screened
JANTXV4N24A JANTXV Screened
JANS4N22A JANS Screened
JANS4N23A JANS Screened
JANS4N24A JANS Screened
* JEDEC registered
4N22A
COLLECTOR CURRENT
VS
COLLECTOR-EMITTER VOLT AGE
V - COLLECTOR EMITTER VOLTAGE - V
0 5 10 15 2520
CE
- COLLECTOR CURRENT - mA
I
0
c
10
30
20
40
50
I = 10 mA
F
I = 20 mA
F
I = 30 mA
F
I = 40 mA
F
1g = 0
T =25°C
A
4N23A
COLLECTOR CURRENT
VS
COLLECTOR-EMITTER VOLT AGE
V - COLLECTOR EMITTE R VOLTAGE - V
0 5 10 15 2520
CE
- COLLECTOR CURRENT - mA
I
0
c
10
30
20
40
50
I = 10 mA
F
I = 20 mA
F
I = 30 mA
F
I = 40 mA
F
1g = 0
T =25°C
A
4N24A
COLLECTOR CURRENT
VS
COLLECTOR-EMITTER VOLT AGE
V - COLLECTOR EMITTE R VOLTAGE - V
0 5 10 15 2520
CE
- COLLECTOR CURRENT - mA
I
0
c
20
60
40
80
100
I = 10 mA
F
I = 20 mA
F
I = 30 mA
F
I = 40 mA
F
1g = 0
T =25°C
A
I
B
= 0
T
A
= 25°C
I
B
= 0
T
A
= 25°C
I
B
= 0
T
A
=
25
°
C
