2N2904 Transistors Si PNP LP HF BJT Military/High-RelN V(BR)CEO (V)40 V(BR)CBO (V)60 I(C) Max. (A)600m Absolute Max. Power Diss. (W)600m Maximum Operating Temp (oC)175o I(CBO) Max. (A)20nO @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.20 h(FE) Max. Current gain. @I(C) (A) (Test Condition)500m @V(CE) (V) (Test Condition)10 f(T) Min. (Hz) Transition Freq200M @I(C) (A) (Test Condition) @V(CE) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition) @I(B) (A) (Test Condition) h(fe) Min. SS Current gain. @I(C) (A) (Test Condition) @V(CE) (V) (Test Condition)