fAMOSPEC COMPLEMENTARY SILICON PLASTIC POWER TRANSISTORS NPN PNP ... designed for use as output device in complementary audio MJE2801T MJE2901T amplifiers up to 30-Watts music power per channel FEATURES: *Collector-Emitter Sustaining Voltage- ,_.V/cearsus) = 60 V (Min) 10 AMPERE DC Current Gain- COMPLEMENTARY SILICON hFE = 25-100 @ I, = 3.0A POWER TRANASISTORS 60 VOLTS 75 WATTS MAXIMUM RATINGS Characteristic Symbol Rating Unit Collector-Emitter Voltage VecEo 60 Vv Collector-Base Voltage Vepo 60 Vv Emitter-Base Voltage Vero 4.0 Collector Current - Continuous Ip 10 ~ Peak lon 15 3 trope to Base current lp 5.0 A wT P ic flea A Total Power Dissipation @T, = 25C Py 75 Ww 123 Derate above 25C 0.6 wc L : L Operating and Storage Junction Ty .Tst C ry D Temperature Range -65 to +150 be te L AL ot THERMAL CHARACTERISTICS Characteristic Symbol Max Unit PIN SOE CTOR Thermal Resistance Junction to Case| Rejc 1.67 oC A.COLLECTORICASE) DM MILLIMETERS FIGURE -1 POWER DERATING MIN | MAX 100 A 14.68 | 1531 a 9 B 9.78 | 10.42 E 0 Cc 5.01 652 = 70 D 13.06 | 14.62 z E 357 | 407 E F 242 | 3.66 a G 112 | 136 8 40 H 0.72 | 096 30 | 422 | 498 g J 114 | 138 9 20 K 220 | 297 5 10 L 033 | 055 * 0 M 2.48 2.98 0 5 50 75 100 125 150 oO 3.70 | 390 Te , TEMPERATURE(*C)MJE2801T NPN / MJE2901T PNP a a a ELECTRICAL CHARACTERISTICS ( T, = 25C unless otherwise noted ) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Coliector-Emitter Breakdown Voltage (1) Veco V (Ig= 200 mA, 1,= 0 ) 60 Collector Cutoff Current leBo mA ( Vop= 60 V, e= 0) 0.1 ( Vog= 60 V, I= 0, T.=150 C) 2.0 Emitter Cutoff Current leao mA ( Veg 4.0V, 1,=0) 1.0 ON CHARACTERISTICS (1) DC Current Gain (p= 3.0 A, Vog= 2.0 V ) hFE 25 100 Base-Emitter On Voitage VBE(on) Vv (1,= 3.0 A, Vog= 2.0 V) 1.4 (1) Pulse Test: Pulse Width =300 us,Duty Cycle = 2.0% MJE2801T Veseysat) Oi cly=10 Vee@V ce=2V V VOLTAGE (VOLTS) Vocersat) Blofigtt0 0 04 0.2 0.5 4 2 5 10 IC , COLLECTOR CURRENT (AMP) FIG-3 DC CURRENT GAIN Voes2.0V T=150C 25 hee , DG CURRENT GAIN 0.01 0.02 005 860.1 02 05 1 2 5 10 Ic , COLLECTOR CURRENT (AMP) There are two limitation on the power handling ability of a transistor :average junction temperature and second breakdown safe operating area curves indicate Ic-Vce limits of the transistor that must be observed for reliable operation i.e., the transistor must not be subjected to greater dissipation than curves indicate. FIG-2 "ON" VOLTAGE MJE2901T 20 = a > nw Vese(eat) Doll 5 #10 V VOLTAGE (VOLTS) 2 & Ver @V ce 2 te Veraaty Ol of ,*16 0.1 02 0.5 1 2 5 10 iC , COLLECTOR CURRENT (AMP) FIG-4 ACTIVE-REGION SAFE OPERATING AREA 100 us - Bondrg Wire Limit Second Sreakdown Linit Ic , COLLECTOR CURRENT (Amp) =~ Thermally Linited T.25C 1 2 5 10 20 40 60 Vee , COLLECTOR EMITTER VOLTAGE (VOLTS) The data of FIG-4 is base on Tupq=150 C;Tc is variable depending on conditions.second breakdown pulse limits are valid for duty cycles to 10% provided Tipig<150C ,At high case temperatures, thermal limitation will reduce the power that can be handled to values less than the limitations imposed by second breakdown.