2N3055, MJ2955 Preferred Device Complementary Silicon Power Transistors . . . designed for general-purpose switching and amplifier applications. * DC Current Gain - hFE = 20 -70 @ IC = 4 Adc * Collector-Emitter Saturation Voltage - * * http://onsemi.com VCE(sat) = 1.1 Vdc (Max) @ IC = 4 Adc Excellent Safe Operating Area Pb-Free Package is Available IIIIIIIIIIII III IIIII II IIIIIIIIIIII III IIIII II IIIIIIIIIIII III IIIII II IIIIIIIIIIII III IIIII II IIIIIIIIIIII III IIIII II II IIIIIIIIIIII III IIIII IIIIIIIIIIII III IIIII II IIIIIIIIIIII III IIIII II IIIIIIIIIIII III IIIII II IIIIIIIIIIII III IIIII II II IIIIIIIIIIII III IIIII IIIIIIIIIIII III IIIII II IIIIIIIIIIII III IIIII II IIIIIIIIIIII III IIIII II IIIIIIIIIIII III IIIII II IIIIIIIIIIII III IIIII II MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage VCEO 60 Vdc Collector-Emitter Voltage VCER 70 Vdc Collector-Base Voltage VCB 100 Vdc Emitter-Base Voltage VEB 7 Vdc IC 15 Adc Collector Current - Continuous Base Current IB 7 Adc Total Power Dissipation @ TC = 25C Derate above 25C PD 115 0.657 W W/C TJ, Tstg - 65 to + 200 C Symbol Max Unit RJC 1.52 C/W Operating and Storage Junction Temperature Range 15 A POWER TRANSISTORS COMPLEMENTARY SILICON 60 V 115 W MARKING DIAGRAM TO-204AA (TO-3) CASE 1-07 xxxx55 = Device Code xxxx= 2N3055 or MJ2955 A = Assembly Location YY = Year WW = Work Week x = 1, 2, or 3 THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction-to-Case Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. ORDERING INFORMATION Package Shipping 2N3055 TO-204AA 100 Units / Tray 2N3055G TO-204AA (Pb-Free) 1 Units / Tubes 140 2N3055H TO-204AA 100 Units / Tray 120 MJ2955 TO-204AA 100 Units / Tray Device 160 PD, POWER DISSIPATION (WATTS) xxxx55 A YYWW 100 For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. 80 60 40 *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 20 0 0 25 50 75 100 125 150 175 200 Preferred devices are recommended choices for future use and best overall value. TC, CASE TEMPERATURE (C) Figure 1. Power Derating Semiconductor Components Industries, LLC, 2004 April, 2004 - Rev. 4 1 Publication Order Number: 2N3055/D 2N3055, MJ2955 IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Characteristic Symbol Min Max Unit VCEO(sus) 60 - Vdc *OFF CHARACTERISTICS Collector-Emitter Sustaining Voltage (Note 1) (IC = 200 mAdc, IB = 0) IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII Collector-Emitter Sustaining Voltage (Note 1) (IC = 200 mAdc, RBE = 100 ) VCER(sus) 70 - Vdc Collector Cutoff Current (VCE = 30 Vdc, IB = 0) ICEO - 0.7 mAdc Collector Cutoff Current (VCE = 100 Vdc, VBE(off) = 1.5 Vdc) (VCE = 100 Vdc, VBE(off) = 1.5 Vdc, TC = 150C) ICEX - - 1.0 5.0 Emitter Cutoff Current (VBE = 7.0 Vdc, IC = 0) IEBO - 5.0 20 5.0 70 - - 1.1 3.0 mAdc mAdc *ON CHARACTERISTICS (Note 1) hFE DC Current Gain (IC = 4.0 Adc, VCE = 4.0 Vdc) (IC = 10 Adc, VCE = 4.0 Vdc) Collector-Emitter Saturation Voltage (IC = 4.0 Adc, IB = 400 mAdc) (IC = 10 Adc, IB = 3.3 Adc) - VCE(sat) Vdc IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III Base-Emitter On Voltage (IC = 4.0 Adc, VCE = 4.0 Vdc) VBE(on) - 1.5 Vdc Is/b 2.87 - Adc Current Gain - Bandwidth Product (IC = 0.5 Adc, VCE = 10 Vdc, f = 1.0 MHz) fT 2.5 - MHz *Small-Signal Current Gain (IC = 1.0 Adc, VCE = 4.0 Vdc, f = 1.0 kHz) hfe 15 120 - *Small-Signal Current Gain Cutoff Frequency (VCE = 4.0 Vdc, IC = 1.0 Adc, f = 1.0 kHz) fhfe 10 - kHz SECOND BREAKDOWN Second Breakdown Collector Current with Base Forward Biased (VCE = 40 Vdc, t = 1.0 s, Nonrepetitive) DYNAMIC CHARACTERISTICS *Indicates Within JEDEC Registration. (2N3055) 1. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%. 20 There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC - VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 2 is based on TC = 25C; TJ(pk) is variable depending on power level. Second breakdown pulse limits are valid for duty cycles to 10% but must be derated for temperature according to Figure 1. IC, COLLECTOR CURRENT (AMP) 50 s dc 10 1 ms 6 4 500 s 2 250 s 1 0.6 0.4 0.2 BONDING WIRE LIMIT THERMALLY LIMITED @ TC = 25C (SINGLE PULSE) SECOND BREAKDOWN LIMIT 6 10 20 40 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 60 Figure 2. Active Region Safe Operating Area http://onsemi.com 2 2N3055, MJ2955 500 200 300 TJ = 150C 25C 100 -55 C 70 50 30 20 10 7.0 5.0 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 IC, COLLECTOR CURRENT (AMP) 0.2 0.1 -55 C 70 50 30 20 10 10 VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) TJ = 25C 1.6 8.0 A 1.2 0.8 0.4 0 5.0 10 20 50 100 200 500 1000 2000 IB, BASE CURRENT (mA) 5.0 7.0 0.3 0.5 0.7 1.0 2.0 3.0 IC, COLLECTOR CURRENT (AMP) 10 Figure 4. DC Current Gain, MJ2955 (PNP) 2.0 4.0 A 0.2 0.1 Figure 3. DC Current Gain, 2N3055 (NPN) IC = 1.0 A VCE = 4.0 V TJ = 150C 25C 100 hFE , DC CURRENT GAIN 200 hFE , DC CURRENT GAIN VCE = 4.0 V 5000 2.0 TJ = 25C 1.6 IC = 1.0 A 4.0 A 8.0 A 1.2 0.8 0.4 0 5.0 Figure 5. Collector Saturation Region, 2N3055 (NPN) 10 20 50 100 200 500 1000 2000 IB, BASE CURRENT (mA) 5000 Figure 6. Collector Saturation Region, MJ2955 (PNP) 1.4 2.0 TJ = 25C 1.2 TJ = 25C 0.8 V, VOLTAGE (VOLTS) V, VOLTAGE (VOLTS) 1.6 1.0 VBE(sat) @ IC/IB = 10 0.6 VBE @ VCE = 4.0 V 0.4 1.2 VBE(sat) @ IC/IB = 10 VBE @ VCE = 4.0 V 0.8 0.4 0.2 0 VCE(sat) @ IC/IB = 10 VCE(sat) @ IC/IB = 10 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 0 10 0.1 IC, COLLECTOR CURRENT (AMPERES) 0.2 0.3 0.5 1.0 2.0 3.0 5.0 IC, COLLECTOR CURRENT (AMP) Figure 7. "On" Voltages, 2N3055 (NPN) Figure 8. "On" Voltages, MJ2955 (PNP) http://onsemi.com 3 10 2N3055, MJ2955 PACKAGE DIMENSIONS TO-204 (TO-3) CASE 1-07 ISSUE Z A N C -T- E D SEATING PLANE K 2 PL 0.13 (0.005) U T Q M M Y DIM A B C D E G H K L N Q U V M -Y- L V NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. ALL RULES AND NOTES ASSOCIATED WITH REFERENCED TO-204AA OUTLINE SHALL APPLY. 2 H G B M T Y 1 -Q- 0.13 (0.005) INCHES MIN MAX 1.550 REF --- 1.050 0.250 0.335 0.038 0.043 0.055 0.070 0.430 BSC 0.215 BSC 0.440 0.480 0.665 BSC --- 0.830 0.151 0.165 1.187 BSC 0.131 0.188 MILLIMETERS MIN MAX 39.37 REF --- 26.67 6.35 8.51 0.97 1.09 1.40 1.77 10.92 BSC 5.46 BSC 11.18 12.19 16.89 BSC --- 21.08 3.84 4.19 30.15 BSC 3.33 4.77 M ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. 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American Technical Support: 800-282-9855 Toll Free USA/Canada ON Semiconductor Website: http://onsemi.com Order Literature: http://www.onsemi.com/litorder Japan: ON Semiconductor, Japan Customer Focus Center 2-9-1 Kamimeguro, Meguro-ku, Tokyo, Japan 153-0051 Phone: 81-3-5773-3850 http://onsemi.com 4 For additional information, please contact your local Sales Representative. 2N3055/D