Amplifier Transistor
PNP Silicon
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector–Emitter Voltage VCEO –60 Vdc
Collector–Base Voltage VCBO –60 Vdc
Emitter–Base V oltage VEBO –5.0 Vdc
Collector Current — Continuous IC–600 mAdc
Total Device Dissipation @ TA = 25°C
Derate above 25°CPD625
5.0 mW
mW/°C
Total Device Dissipation @ TC = 25°C
Derate above 25°CPD1.5
12 Watts
mW/°C
Operating and Storage Junction
Temperature Range TJ, Tstg –55 to +150 °C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction to Ambient RJA 200 °C/W
Thermal Resistance, Junction to Case RJC 83.3 °C/W
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage(1)
(IC = –10 mAdc, IB = 0) V(BR)CEO –60 — Vdc
Collector–Base Breakdown Voltage
(IC = –10 Adc, IE = 0) V(BR)CBO –60 — Vdc
Emitter–Base Breakdown Voltage
(IE = –10 Adc, IC = 0) V(BR)EBO –5.0 — Vdc
Collector Cutoff Current
(VCE = –30 Vdc, VEB(off) = –0.5 Vdc) ICEX — –50 nAdc
Collector Cutoff Current
(VCB = –50 Vdc, IE = 0)
(VCB = –50 Vdc, IE = 0, TA = 150°C)
ICBO —
—–0.01
–10
µAdc
Emitter Cutoff Current
(VEB = –3.0 Vdc) IEBO — –10 nAdc
Collector Cutoff Current
(VCE = –10 V) ICEO — –10 nAdc
Base Cutoff Current
(VCE = –30 Vdc, VEB(off) = –0.5 Vdc) IBEX — –50 nAdc
1. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%.
ON Semiconductor
Semiconductor Components Industries, LLC, 2001
March, 2001 – Rev. 1 1Publication Order Number:
P2N2907A/D
P2N2907A
CASE 29–11, STYLE 17
TO–92 (TO–226AA)
123
COLLECTOR
1
2
BASE
3
EMITTER
P2N2907A
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2
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic Symbol Min Max Unit
ON CHARACTERISTICS
DC Current Gain
(IC = –0.1 mAdc, VCE = –10 Vdc)
(IC = –1.0 mAdc, VCE = –10 Vdc)
(IC = –10 mAdc, VCE = –10 Vdc)
(IC = –150 mAdc, VCE = –10 Vdc)(1)
(IC = –500 mAdc, VCE = –10 Vdc)(1)
hFE 75
100
100
100
50
—
—
—
300
—
—
Collector–Emitter Saturation Voltage(1)
(IC = –150 mAdc, IB = –15 mAdc)
(IC = –500 mAdc, IB = –50 mAdc)
VCE(sat) —
—–0.4
–1.6
Vdc
Base–Emitter Saturation Voltage(1)
(IC = –150 mAdc, IB = –15 mAdc)
(IC = –500 mAdc, IB = –50 mAdc)
VBE(sat) —
—–1.3
–2.6
Vdc
SMALL–SIGNAL CHARACTERISTICS
Current–Gain — Bandwidth Product(1), (2)
(IC = –50 mAdc, VCE = –20 Vdc, f = 100 MHz) fT200 — MHz
Output Capacitance
(VCB = –10 Vdc, IE = 0, f = 1.0 MHz) Cobo — 8.0 pF
Input Capacitance
(VEB = –2.0 Vdc, IC = 0, f = 1.0 MHz) Cibo — 30 pF
SWITCHING CHARACTERISTICS
Turn–On Time
(V 30 Vd I 150 Ad
ton — 50 ns
Delay Time (VCC = –30 Vdc, IC = –150 mAdc,
I
B1
= –15 mAdc
)
(
Fi
g
ures 1 and 5
)
td— 10 ns
Rise Time
I
B1 = –
15
mAdc)
(Figures
1
and
5)
tr— 40 ns
Turn–Off Time
(V 60Vd I 150 Ad
toff —110 ns
Storage Time (VCC = –6.0 Vdc, IC = –150 mAdc,
I
B1
= I
B2
= –15 mAdc
)
(
Fi
g
ure 2
)
ts— 80 ns
Fall Time
I
B1 =
I
B2 = –
15
mAdc)
(Figure
2)
tf— 30 ns
1. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%.
2. fT is defined as the frequency at which |hfe| extrapolates to unity.
00
-16 V
200 ns
50
1.0 k
200
-30 V
TO OSCILLOSCOPE
RISE TIME ≤ 5.0 ns
+15 V -6.0 V
1.0 k 37
50 1N916
1.0 k
200 ns
-30 V
TO OSCILLOSCOPE
RISE TIME ≤ 5.0 ns
INPUT
Zo = 50 Ω
PRF = 150 PPS
RISE TIME ≤ 2.0 ns
P.W. < 200 ns
INPUT
Zo = 50 Ω
PRF = 150 PPS
RISE TIME ≤ 2.0 ns
P.W. < 200 ns
Figure 1. Delay and Rise Time Test Circuit Figure 2. Storage and Fall Time Test Circuit
P2N2907A
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3
TYPICAL CHARACTERISTICS
Figure 3. DC Current Gain
IC, COLLECTOR CURRENT (mA)
0.3
0.5
0.7
1.0
3.0
0.2
-0.1
TJ = 125°C
25°C
-55°C
VCE = -1.0 V
VCE = -10 V
hFE, NORMALIZED CURRENT GAIN
2.0
-0.2 -0.3 -0.5 -0.7 -1.0 -2.0 -3.0 -5.0 -7.0 -10 -20 -30 -50 -70 -100 -200 -300 -500
Figure 4. Collector Saturation Region
IB, BASE CURRENT (mA)
-0.4
-0.6
-0.8
-1.0
-0.2
V , COLLECTOR-EMITTER VOLTAGE (VOLTS)
0
CE
IC = -1.0 mA
-0.005
-10 mA
-0.01
-100 mA -500 mA
-0.02 -0.03 -0.05 -0.07 -0.1 -0.2 -0.3 -0.5 -0.7 -1.0 -2.0 -3.0 -5.0 -7.0 -10 -20 -30 -50
Figure 5. Turn–On Time
IC, COLLECTOR CURRENT
300
-5.0
Figure 6. Turn–Off Time
IC, COLLECTOR CURRENT (mA)
-5.0
t, TIME (ns)
t, TIME (ns)
200
100
70
50
30
20
10
7.0
5.0
3.0
-7.0 -10 -20 -30 -50 -70 -100 -200 -300 -500
tr
2.0 V
td @ VBE(off) = 0 V
VCC = -30 V
IC/IB = 10
TJ = 25°C
500
300
100
70
50
30
20
10
7.0
5.0
-7.0 -10 -20 -30 -50 -70 -100 -200 -300 -500
200
tf
t′s = ts - 1/8 tf
VCC = -30 V
IC/IB = 10
IB1 = IB2
TJ = 25°C
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4
TYPICAL SMALL–SIGNAL CHARACTERISTICS
NOISE FIGURE
VCE = 10 Vdc, TA = 25°C
Figure 7. Frequency Effects
f, FREQUENCY (kHz)
10
0.01
Figure 8. Source Resistance Effects
Rs, SOURCE RESISTANCE (OHMS)
NF, NOISE FIGURE (dB)
NF, NOISE FIGURE (dB)
f = 1.0 kHz
IC = -50 µA
-100 µA
-500 µA
-1.0 mA
Rs = OPTIMUM SOURCE RESISTANCE
8.0
6.0
4.0
2.0
0
0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100
10
8.0
6.0
4.0
2.0
050 100 200 500 1.0 k 2.0 k 5.0 k 10 k 20 k 50 k
IC = -1.0 mA, Rs = 430 Ω
-500 µA, Rs = 560 Ω
-50 µA, Rs = 2.7 kΩ
-100 µA, Rs = 1.6 kΩ
Figure 9. Capacitances
REVERSE VOLTAGE (VOLTS)
30
Figure 10. Current–Gain — Bandwidth Product
IC, COLLECTOR CURRENT (mA)
C, CAPACITANCE (pF)
-0.1
2.0
Figure 11. “On” Voltage
IC, COLLECTOR CURRENT (mA)
-1.0
Figure 12. Temperature Coefficients
IC, COLLECTOR CURRENT (mA)
V, VOLTAGE (VOLTS)
TJ = 25°C
VBE(sat) @ IC/IB = 10
VCE(sat) @ IC/IB = 10
VBE(on) @ VCE = -10 V
RVC for VCE(sat)
fT, CURRENT-GAIN BANDWIDTH PRODUCT (MHz)
COEFFICIENT (mV/ °C)
20
10
7.0
5.0
3.0
-0.2 -0.3 -0.5 -1.0 -2.0 -3.0 -5.0 -10 -20-30
400
300
200
100
80
60
40
30
20
-1.0 -2.0 -5.0 -10 -20 -50 -100 -200 -500 -1000
-0.8
-0.6
-0.4
-0.2
0
-0.1 -0.2 -0.5 -1.0 -2.0 -5.0 -10 -20 -50 -100 -200 -500
+0.5
0
-0.5
-1.0
-1.5
-2.0
-2.5
-0.1 -0.2 -0.5 -1.0 -2.0 -5.0 -10 -20 -50 -100 -200 -500
Ceb
Ccb
VCE = -20 V
TJ = 25°C
RVB for VBE
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5
PACKAGE DIMENSIONS
CASE 29–11
ISSUE AL
TO–92 (TO–226)
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
4. LEAD DIMENSION IS UNCONTROLLED IN P AND
BEYOND DIMENSION K MINIMUM.
R
A
P
J
L
B
K
G
H
SECTION X–X
C
V
D
N
N
XX
SEATING
PLANE DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A0.175 0.205 4.45 5.20
B0.170 0.210 4.32 5.33
C0.125 0.165 3.18 4.19
D0.016 0.021 0.407 0.533
G0.045 0.055 1.15 1.39
H0.095 0.105 2.42 2.66
J0.015 0.020 0.39 0.50
K0.500 --- 12.70 ---
L0.250 --- 6.35 ---
N0.080 0.105 2.04 2.66
P--- 0.100 --- 2.54
R0.115 --- 2.93 ---
V0.135 --- 3.43 ---
1
STYLE 1:
PIN 1. EMITTER
2. BASE
3. COLLECTOR
P2N2907A
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6
Notes
P2N2907A
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7
Notes
P2N2907A
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8
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