Zowie Technology Corporation
High Voltage Transistor
NPN Silicon
MMBT5551 1
2
1
2
33
SOT-23
Rating Symbol Value Unit
Characteristic Symbol Min. Max. Unit
Collector-Emitter Voltage VCEO 140 Vdc
Collector-Base Voltage VCBO 160 Vdc
Emitter-Base Voltage VEBO 6.0 Vdc
Collector Current-Continuous IC600 mAdc
Characteristic Symbol Max. Unit
Total Device Dissipation FR-5 Board(1) TA=25oC
Derate above 25oCPD225
1.8 mW
mW / oC
Total Device Dissipation Alumina Substrate,(2) TA=25oC
Derate above 25oCPD
V(BR)CBO
300
2.4
180 -
mW
mW / oC
Thermal Resistance Junction to Ambient 556 oC / W
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
DEVICE MARKING
ELECTRICAL CHARACTERISTICS (TA=25oC unless otherwise noted)
V(BR)CEO 160 - Vdc
Vdc
OFF CHARACTERISTICS
R
JA
Thermal Resistance Junction to Ambient 417 oC / WR
JA
Junction and Storage Temperature
Collector-Base Breakdowe Voltage
( IC=100 uAdc, IE=0 )
V(BR)EBO 6.0 - Vdc
Emitter-Base Breakdowe Voltage
( IE=10 uAdc, IC=0 )
Collector-Emitter Breakdowe Voltage(3)
( IC=1.0mAdc, IB=0 )
ICBO -
-50
50 nAdc
uAdc
Base Cutoff Current
( VCE=120 Vdc, IE=0 )
( VCE=120 Vdc, IE=0, TA = 100oC )
IEBO - 50 nAdc
Collector Cutoff Current
( VEB=4.0 Vdc, IC=0 )
MMBT5551=G1
-55 to +150 oCTJ,TSTG
Zowie Technology CorporationREV. : 0
EMITTER
BASE
COLLECTOR
(1) FR-5=1.0 x 0.75 x 0.062in.
(2) Alumina=0.4 x 0.3 x 0.024in. 99.5% alumina.
(3) Pulse Test : Pulse Width = 300 uS, Duty Cycle = 2.0%.
Zowie Technology Corporation
Characteristic Symbol Min. Max. Unit
ELECTRICAL CHARACTERISTICS (TA=25oC unless otherwise noted) (Continued)
HFE 80
80
30
-
250
-
-
ON CHARACTERISTICS
VCE(sat) Vdc
DC Current Gain
( IC= 1.0 mAdc, VCE= 5.0 Vdc )
( IC= 10 mAdc, VCE= 5.0 Vdc )
( IC= 50 mAdc, VCE= 5.0 Vdc )
Collector-Emitter Saturation Voltage
( IC= 10 mAdc, IB= 1.0 mAdc )
( IC= 50 mAdc, IB= 5.0 mAdc ) -
-0.15
0.20
VBE(sat) Vdc
Base-Emitter Saturation Voltage
( IC= 10 mAdc, IB= 1.0 mAdc )
( IC= 50 mAdc, IB= 5.0 mAdc ) -
-1.0
1.0
Zowie Technology CorporationREV. : 0
Zowie Technology Corporation
REV. : 0
Zowie Technology Corporation MMBT5551
Figure 2. Collector Saturation Region
IB, BASE CURRENT ( mA )
VCE, COLLECTOR EMITTER VOLTAGE (VOLTS)
IC = 1.0 mA 10 mA 30 mA 100 mA
Figure 1. DC Current Gain
IC, COLLECTOR CURRENT ( mA )
hFE, DC CURRENT GAIN
TJ = 25oC
TJ = -55oC
TJ = +125oC
VCE=1.0 V
500
5.0
10
0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100
200
30
20
300
100
50
7.0
1.0
0
0.3
0.005 0.01 0.2 0.5 1.0 2.0 20 50
0.8
0.5
0.4
0.9
0.7
0.6
0.2
0.02 0.05 0.1 10
0.1
5.0
Figure 3. Collector Cut - Off Region
IC, COLLECTOR CURRENT (uA)
VBE, BASE - EMITTER VOLTAGE (VOLTS)
Figure 4. " On " Voltages
IC, COLLECTOR CURRENT ( mA )
V, VOLTAGE ( VOLTS )
0.6
1.0
0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100
0.8
0.4
0.2
00.3 3.0 30
TJ= 25oC
VBE(SAT) @ IC/IB = 10
VCE(SAT) @ IC/IB = 10
VCE=5.0 V
TJ = 125oC
TJ = 75oC
TJ = 25oC
REVERSE FORWARD
101
10-5
10-4
10-3
10-2
10-1
100
0.20.4 0.3 0.1 0 0.1 0.2 0.3 0.4 0.5 0.6
VCE = 30 V
IC = ICES
Zowie Technology Corporation
REV. : 0
Zowie Technology Corporation MMBT5551
Figure 5. Temperature Coefficients
IC, COLLECTOR CURRENT ( mA )
Figure 8. Turn-On Time
C, CAPACITANCE ( pF )
t, TIME ( nS )
VR, REVERSE VOLTAGE ( VOLTS )
Figure 7. Capacitances
VR, REVERSE VOLTAGE ( VOLTS )
Figure 9. Turn - Off Time
IC, COLLECTOR CURRENT ( mA )
t, TIME ( nS )
TJ= 25oCTJ= 25oC
Cibo
Cobo
2.5
2.0
1.5
1.0
0.5
0
-0.5
-1.0
-1.5
-2.0
-2.5 1.0 2.0 5.0 10 20 50 1000.1 0.2 0.5 3.0 300.3
TJ= -55oC to +135oC
VC for VCE(sat)
VB for VBE(sat)
Figure 6. Switching Time Test Circuit
VALUES SHOWN ARE FOR IC @ 10 mA
10.2V
Vin
Vin
10 uS
INPUT PULSE
VBB - 8.8V
100
RB
5.1 k
0.25 uF
100 1N914
Vout
RC
VCC30 V
3.0 k
tr, tf 10 nS
DUTY CYCLE = 1.0%
100
1.0 0.2 0.5 1.0 2.0 5.0 10 20
70
50
30
20
10
7.0
5.0
3.0
2.0
0.3 0.7 3.0 7.0
V, TEMPERATURE COEFFICIENTS (mV / oC)
1000
0.3 1.0 10 20 30 50
0.50.2
10
20
30
50
100
200
300
500
2.0 100 200
3.0 5.0
IC/IB = 10
TJ= 25oC
IC/IB = 10
tr @ VCC = 30 V tr @ VCC = 120 V
VCC = 120 V
td @ VEB(off) = 1.0 V
tf @ VCC = 120 V
tf @ VCC = 30 V
ts @ VCC = 120 V
5000
50
100
200
300
500
3000
2000
1000
0.3 1.0 10 20 30 50
0.50.2 2.0 100 200
3.0 5.0
