IRLML2502PbF l l l l l l l l HEXFET(R) Power MOSFET Ultra Low On-Resistance N-Channel MOSFET SOT-23 Footprint Low Profile (<1.1mm) Available in Tape and Reel Fast Switching Lead-Free RoHS Compliant, Halogen-Free G 1 VDSS = 20V 3 D S RDS(on) = 0.045 2 Description These N-Channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low onresistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET(R) power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in battery and load management. Micro3TM A thermally enhanced large pad leadframe has been incorporated into the standard SOT-23 package to produce a HEXFET Power MOSFET with the industry's smallest footprint. This package, dubbed the Micro3TM, is ideal for applications where printed circuit board space is at a premium. The low profile (<1.1mm) of the Micro3 allows it to fit easily into extremely thin application environments such as portable electronics and PCMCIA cards. The thermal resistance and power dissipation are the best available. Standard Pack Base Part Number Package Type IRLML2502TRPbF Micro3TM (SOT-23) Form Quantity Tape and Reel 3000 Orderable Part Number IRLML2502TRPbF Absolute Maximum Ratings Parameter VDS ID @ TA = 25C ID @ TA= 70C IDM PD @TA = 25C PD @TA = 70C VGS TJ, TSTG Drain- Source Voltage Continuous Drain Current, VGS @ 4.5V Continuous Drain Current, VGS @ 4.5V Pulsed Drain Current Power Dissipation Power Dissipation Linear Derating Factor Gate-to-Source Voltage Junction and Storage Temperature Range Max. Units 20 4.2 3.4 33 1.25 0.8 0.01 12 -55 to + 150 V A W W/C V C Thermal Resistance Parameter RJA 1 Maximum Junction-to-Ambient www.irf.com (c) 2014 International Rectifier Typ. Max. Units 75 100 C/W Submit Datasheet Feedback April 24, 2014 IRLML2502PbF Electrical Characteristics @ TJ = 25C (unless otherwise specified) Min. Typ. Max. Units V(BR)DSS Drain-to-Source Breakdown Voltage Parameter 20 --- --- V V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient --- 0.01 --- RDS(on) Static Drain-to-Source On-Resistance --- 0.035 0.045 --- 0.050 0.080 Conditions VGS = 0V, ID = 250uA V/C Reference to 25C, ID = 1.0mA VGS = 4.5V, ID = 4.2A VGS = 2.5V, ID = 3.6A VGS(th) Gate Threshold Voltage 0.60 --- 1.2 V VGS(th) Gate Threshold Voltage Coefficient --- -3.2 --- mV/C S VDS = VGS, ID = 250A gfs Forward Transconductance 5.8 --- --- IDSS Drain-to-Source Leakage Current --- --- 1.0 --- --- 25 Gate-to-Source Forward Leakage --- --- 100 Gate-to-Source Reverse Leakage --- --- -100 Qg Total Gate Charge --- 8.0 12 Q gs Gate-to-Source Charge --- 1.8 2.7 Q gd Gate-to-Drain ("Miller") Charge --- 1.7 2.6 VGS = 5.0V td(on) Turn-On Delay Time --- 7.5 --- VDD = 10V tr Rise Time --- 10 --- td(off) Turn-Off Delay Time --- 54 --- tf Fall Time --- 26 --- RD = 10 Ciss Input Capacitance --- 740 --- VGS = 0V Coss Output Capacitance --- 90 --- Crss Reverse Transfer Capacitance --- 66 --- Min. Typ. Max. IGSS A nA d d VDS = 10V, ID = 4.0A VDS = 16V, VGS = 0V VDS = 16V, VGS = 0V, TJ = 70C VGS = 12V VGS = -12V ID = 4.0A nC ns pF VDS = 10V d ID = 1.0A RG = 6 d VDS = 15V = 1.0MHz Source-Drain Rating and Characteristics Parameter IS Continuous Source Current --- (Body Diode) ISM c 1.3 --- --- 33 --- --- 1.2 Conditions MOSFET symbol A Pulsed Source Current (Body Diode) --- Units D showing the integral reverse G p-n junction diode. VSD Diode Forward Voltage V TJ = 25C, IS = 1.3A, VGS = 0V trr Reverse Recovery Time --- 16 24 ns TJ = 25C, IF = 1.3A Q rr Reverse Recovery Charge --- 8.6 13 nC di/dt = 100A/s d S d Notes: Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 ) Surface mounted on FR-4 board, t 5sec. Pulse width 300s; duty cycle 2%. 2 www.irf.com (c) 2014 International Rectifier Submit Datasheet Feedback April 24, 2014 IRLML2502PbF 100 100 VGS 7.00V 5.00V 4.50V 3.50V 3.00V 2.70V 2.50V BOTTOM 2.25V VGS 7.00V 5.00V 4.50V 3.50V 3.00V 2.70V 2.50V BOTTOM 2.25V TOP I D , Drain-to-Source Current (A) I D , Drain-to-Source Current (A) TOP 2.25V 10 20s PULSE WIDTH TJ = 25 C 1 0.1 1 10 2.25V 10 1 0.1 100 VDS , Drain-to-Source Voltage (V) 2.0 RDS(on) , Drain-to-Source On Resistance (Normalized) I D , Drain-to-Source Current (A) TJ = 25 C TJ = 150 C V DS = 15V 20s PULSE WIDTH 2.8 3.2 3.6 4.0 VGS , Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics 3 10 100 Fig 2. Typical Output Characteristics 100 2.4 1 VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 10 2.0 20s PULSE WIDTH TJ = 150 C www.irf.com (c) 2014 International Rectifier ID = 4.0A 1.5 1.0 0.5 0.0 -60 -40 -20 VGS = 4.5V 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature ( C) Fig 4. Normalized On-Resistance Vs. Temperature Submit Datasheet Feedback April 24, 2014 IRLML2502PbF VGS = 0V, f = 1MHz Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd Coss = Cds + Cgd C, Capacitance (pF) 1000 800 Ciss 600 400 200 0 Coss Crss 1 10 10 VGS , Gate-to-Source Voltage (V) 1200 VDS = 10V 8 6 4 2 0 100 ID = 4.0A 0 8 12 16 Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 1000 100 OPERATION IN THIS AREA LIMITED BY RDS(on) 100 10 I D , Drain Current (A) ISD , Reverse Drain Current (A) 4 QG , Total Gate Charge (nC) VDS , Drain-to-Source Voltage (V) TJ = 150 C 1 TJ = 25 C 0.1 0.4 V GS = 0 V 0.6 0.8 1.0 1.2 1.4 VSD ,Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage 4 www.irf.com (c) 2014 International Rectifier 10us 10 100us 1ms 1 10ms TA = 25 C TJ = 150 C Single Pulse 0.1 0.1 1 10 VDS , Drain-to-Source Voltage (V) Fig 8. Maximum Safe Operating Area Submit Datasheet Feedback April 24, 2014 100 IRLML2502PbF ID , Drain Current (A) 4.0 3.0 2.0 1.0 0.0 25 50 75 100 125 TC , Case Temperature ( C) 150 Fig 9. Maximum Drain Current Vs. Case Temperature Thermal Response (Z thJA ) 1000 100 D = 0.50 0.20 0.10 10 0.05 PDM 0.02 0.01 1 t1 SINGLE PULSE (THERMAL RESPONSE) 0.1 0.00001 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJA + TA 0.0001 0.001 0.01 0.1 1 10 t1 , Rectangular Pulse Duration (sec) Fig 10. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient 5 www.irf.com (c) 2014 International Rectifier Submit Datasheet Feedback April 24, 2014 RDS(on) , Drain-to -Source Voltage ( ) 0.05 0.04 Id = 4.0A 0.03 0.02 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 RDS ( on ) , Drain-to-Source On Resistance ( ) IRLML2502PbF 0.30 VGS = 2.5V 0.20 0.10 VGS = 4.5V 0.00 0 VGS, Gate -to -Source Voltage ( V ) 10 20 30 iD , Drain Current ( A ) Fig 11. On-Resistance Vs. Gate Voltage Fig 12. On-Resistance Vs. Drain Current VGS(th), Gate threshold Voltage (V) 1.3 1.1 0.9 0.7 ID = 50A ID = 250A 0.5 -75 -50 -25 0 25 50 75 100 125 150 TJ , Temperature ( C ) Fig 13. Threshold Voltage Vs. Temperature 6 www.irf.com (c) 2014 International Rectifier Submit Datasheet Feedback April 24, 2014 40 IRLML2502PbF Micro3 (SOT-23) (Lead-Free) Package Outline Dimensions are shown in millimeters (inches) S Y M B O L 6 5 D 3 6 ccc 2 B e A A1 A2 b c E E1 1 DIMENSIONS MILLIMET ERS MAX MIN 0.89 1.12 0.01 0.10 0.88 1.02 0.30 0.50 0.08 0.20 3.04 2.80 2.10 2.64 1.40 1.20 0.95 BSC 1.90 BSC 0.40 0.60 0.25 BSC 0 8 0.10 0.20 0.15 C B A D E E1 e 5 e1 L L1 0 aaa e1 bbb ccc 4 INCHES MIN MAX .036 .044 .0004 .0039 .035 .040 .0119 .0196 .0032 .0078 .111 .119 .083 .103 .048 .055 .0375 BSC .075 BSC .0158 .0236 .0118 BSC 0 8 .004 .008 .006 H A A2 L1 3X b A1 bbb aaa C C A B 3 SURF 0 7 3X L RECOMMENDED F OOTPRINT NOT ES 1. DIMENS IONING AND T OLERANCING PER ASME Y14.5M-1994. 0.972 3X [.038] 2. DIMENS IONS ARE S HOWN IN MILLIMETERS AND INCHES . 2.742 [.1079] 3. CONT ROLLING DIMENS ION: MILLIMET ER. 4 DATUM PLANE H IS LOCATED AT T HE MOLD PART ING LINE. 5 DATUM A AND B T O B E DET ERMINED AT DAT UM PLANE H. 6 DIMENS IONS D AND E1 ARE MEAS URED AT DAT UM PLANE H. 7 DIMENS ION L IS T HE LEAD LENGTH FOR S OLDERING T O A S UBS T RATE. 8. OUT LINE CONFORMS TO JEDEC OUT LINE T O-236AB. 0.95 [.0375] 3X 0.802 [.031] 1.90 [.075] Micro3 (SOT-23 / TO-236AB) Part Marking Information Notes: This part marking information applies to devices produced after 02/26/2001 DATE CODE PART NUMBER Cu WIRE HALOGEN FREE LEAD-FREE ASSEMBLY LOT CODE X = PART NUMBER CODE REFERENCE : A = IRLML2402 B = IRLML2803 C = IRLML6302 D = IRLML5103 E = IRLML6402 F = IRLML6401 G = IRLML2502 H = IRLML5203 I = IRLML0030 J = IRLML2030 K = IRLML0100 L = IRLML0060 M = IRLML0040 N = IRLML2060 P = IRLML9301 R = IRLML9303 S = IRLML6244 T = IRLML6246 U = IRLML6344 V = IRLML6346 W = IRFML8244 W = (1-26) IF PRECEDED BY LAST DIGIT OF CALENDAR YEAR WORK YEAR Y W WEEK 1 2011 2001 01 A 2 02 B 2012 2002 3 2013 2003 03 C 4 04 D 2014 2004 5 2015 2005 6 2016 2006 7 2017 2007 8 2018 2008 9 2019 2009 0 24 X 2020 2010 25 Y 26 Z X = IRLML2244 Y = IRLML2246 Z = IRFML9244 W = (27-52) IF PRECEDED BY A LETTER WORK W Y YEAR WEEK DATE CODE EXAMPLE: YWW = 432 = DF YWW = 503 = 5C 2011 2012 2013 2014 2015 2016 2017 2018 2019 2020 2001 2002 2003 2004 2005 2006 2007 2008 2009 2010 A B C D E F G H J K 27 28 29 30 A B C D 50 51 52 X Y Z Note: For the most current drawing please refer to IR website at http://www.irf.com/package 7 www.irf.com (c) 2014 International Rectifier Submit Datasheet Feedback April 24, 2014 IRLML2502PbF Micro3TM Tape & Reel Information Dimensions are shown in millimeters (inches) 2.05 ( .080 ) 1.95 ( .077 ) 1.6 ( .062 ) 1.5 ( .060 ) 4.1 ( .161 ) 3.9 ( .154 ) TR FEED DIRECTION 1.85 ( .072 ) 1.65 ( .065 ) 3.55 ( .139 ) 3.45 ( .136 ) 4.1 ( .161 ) 3.9 ( .154 ) 1.32 ( .051 ) 1.12 ( .045 ) 8.3 ( .326 ) 7.9 ( .312 ) 0.35 ( .013 ) 0.25 ( .010 ) 1.1 ( .043 ) 0.9 ( .036 ) 178.00 ( 7.008 ) MAX. 9.90 ( .390 ) 8.40 ( .331 ) NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541. Note: For the most current drawing please refer to IR website at http://www.irf.com/package 8 www.irf.com (c) 2014 International Rectifier Submit Datasheet Feedback April 24, 2014 IRLML2502PbF Qualification information Consumer Qualification level (per JEDE C JE S D47F Moisture Sensitivity Level Micro3TM (SOT-23) RoHS compliant guidelines) MS L1 (per JEDE C J-S T D-020D ) Yes Qualification standards can be found at International Rectifier's web site: http://www.irf.com/product-info/reliability Applicable version of JEDEC standard at the time of product release Revision History Date Comment 4/24/2014 * Updated data sheet with new IR corporate template. * Updated package outline & part marking on page 7. * Added Qualification table -Qual level "Consumer" on page 9. * Added bullet point in the Benefits "RoHS Compliant, Halogen -Free" on page 1. IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA To contact International Rectifier, please visit http://www.irf.com/whoto-call/ 9 www.irf.com (c) 2014 International Rectifier Submit Datasheet Feedback April 24, 2014