© Semiconductor Components Industries, LLC, 1994
November, 2016 − Rev. 8 1Publication Order Number:
BCW68GLT1/D
BCW68GL
General Purpose Transistor
PNP Silicon
Features
•NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
•These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector−Emitter Voltage VCEO −45 Vdc
Collector−Base Voltage VCBO −60 Vdc
Emitter−Base Voltage VEBO −5.0 Vdc
Collector Current − Continuous IC−800 mAdc
Stresses exceeding those listed in the Maximum Ratings table may damage
the device. If any of these limits are exceeded, device functionality should not
be assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation FR−5 Board
(Note 1) TA = 25°C
Derate above 25°C
PD225
1.8
mW
mW/°C
Thermal Resistance,
Junction−to−Ambient RqJA 556 °C/W
Total Device Dissipation
Alumina Substrate (Note 2)
TA = 25°C
Derate above 25°C
PD300
2.4
mW
mW/°C
Thermal Resistance,
Junction−to−Ambient RqJA 417 °C/W
Junction and Storage Temperature TJ, Tstg −55 to +150 °C
1. FR−5 = 1.0 0.75 0.062 in.
2. Alumina = 0.4 0.3 0.024 in 99.5% alumina.
SOT−23
CASE 318
STYLE 6
DG = Specific Device Code
M = Date Code*
G= Pb−Free Package
MARKING DIAGRAM
12
3
Device Package Shipping†
ORDERING INFORMATION
BCW68GLT1G,
NSVBCW68GLT1G SOT−23
(Pb−Free) 3000 / Tape &
Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
s
Brochure, BRD8011/D.
DG MG
G
COLLECTOR
3
1
BASE
2
EMITTER
(Note: Microdot may be in either location)
BCW68GLT3G SOT−23
(Pb−Free) 10000 / Tape &
Reel
*Date Code orientation and/or overbar may vary
depending upon manufacturing location.
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BCW68GL
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2
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage
(IC = −10 mAdc, IB = 0) V(BR)CEO −45 − − Vdc
Collector−Emitter Breakdown Voltage
(IC = −10 mAdc, VEB = 0) V(BR)CES −60 − − Vdc
Emitter−Base Breakdown Voltage
(IE = −10 mAdc, IC = 0) V(BR)EBO −5.0 − − Vdc
Collector Cutoff Current
(VCE= −45 Vdc, IE = 0)
(VCE= −45 Vdc, IB = 0, TA = 150°C)
ICES −
−−
−−20
−10 nAdc
mAdc
Emitter Cutoff Current (V EB = −4.0 Vdc, IC = 0) IEBO − − −20 nAdc
ON CHARACTERISTICS
DC Current Gain
(IC = −10 mAdc, VCE = −1.0 Vdc)
(IC = −100 mAdc, VCE = −1.0 Vdc)
(IC = −300 mAdc, VCE = −1.0 Vdc)
hFE 120
160
60
−
−
−
400
−
−
−
Collector−Emitter Saturation Voltage
(IC = −500 mAdc, IB = −50 mAdc) VCE(sat) − − −0.7 Vdc
Base−Emitter Saturation Voltage
(IC = −500 mAdc, IB = −50 mAdc) VBE(sat) − − −2.0 Vdc
SMALL−SIGNAL CHARACTERISTICS
Current−Gain − Bandwidth Product
(IC = −20 mAdc, VCE = −10 Vdc, f = 100 MHz) fT100 − − MHz
Output Capacitance
(VCB= −10 Vdc, IE = 0, f = 1.0 MHz) Cobo − − 18 pF
Input Capacitance
(VEB= −0.5 Vdc, IC = 0, f = 1.0 MHz) Cibo − − 105 pF
Noise Figure
(IC= −0.2 mAdc, VCE = −5.0 Vdc, RS = 1.0 kW, f = 1.0 kHz, BW = 200 Hz) NF− − 10 dB
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
BCW68GL
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3
TYPICAL CHARACTERISTICS
Figure 1. DC Current Gain vs. Collector
Current Figure 2. Collector Emitter Saturation Voltage
vs. Collector Current
IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)
0.10.010.001
0
100
200
300
400
500
10.10.010.001
0.01
0.1
1
Figure 3. Base Emitter Saturation Voltage vs.
Collector Current Figure 4. Base Emitter Voltage vs. Collector
Current
IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)
10.10.010.0010.0001
0.2
0.3
0.5
0.6
0.7
0.8
1.0
1.1
10.10.010.0010.0001
0.2
0.3
0.5
0.6
0.8
0.9
1.0
1.2
hFE, DC CURRENT GAIN
VCE(sat), COLLECTOR−EMITTER
SATURATION VOLTAGE (V)
VBE(sat), BASE−EMITTER
SATURATION VOLTAGE (V)
VBE(on), BASE−EMITTER VOLTAGE (V)
1
VCE = 1 V
150°C
−55°C
25°C
IC/IB = 10
150°C
−55°C
25°C
0.4
0.9
IC/IB = 10
150°C
−55°C
25°C
0.4
0.7
1.1 VCE = 5 V
150°C
−55°C
25°C
Figure 5. Current Gain Bandwidth Product vs.
Collector Current
IC, COLLECTOR CURRENT (mA)
10001010.1
10
100
fT, CURRENT−GAIN−BANDWIDTH
PRODUCT (MHz)
VCE = 1 V
TA = 25°C
1000
100
BCW68GL
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4
TYPICAL CHARACTERISTICS
IB, BASE CURRENT (mA)
Figure 6. Saturation Region
100
10
1.0
VR, REVERSE VOLTAGE (VOLTS)
Figure 7. Temperature Coefficients
+1.0
IC, COLLECTOR CURRENT (mA)
Figure 8. Capacitances
-0.1 -1.0-1.0 -10 -100 -1000
-2.0
-1.0
0
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
V, TEMPERATURE COEFFICIENTS (mV/ C)°θ
C, CAPACITANCE (pF)
-1.0
-0.8
-0.6
-0.4
-0.2
0
-0.01 -0.1 -10 -100-1.0
-10 -100
TJ = 25°C
IC = -10 mA
IC = -100 mA
IC = -300 mA
IC =
-500 mA
qVC for VCE(sat)
qVB for VBE
Cob
Cib
SOT−23 (TO−236)
CASE 318−08
ISSUE AS
DATE 30 JAN 2018
SCALE 4:1
D
A1
3
12
1
XXXMG
G
XXX = Specific Device Code
M = Date Code
G= Pb−Free Package
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “ G”,
may or may not be present.
GENERIC
MARKING DIAGRAM*
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH.
MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF
THE BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS.
SOLDERING FOOTPRINT
VIEW C
L
0.25
L1
e
EE
b
A
SEE VIEW C
DIM
A
MIN NOM MAX MIN
MILLIMETERS
0.89 1.00 1.11 0.035
INCHES
A1 0.01 0.06 0.10 0.000
b0.37 0.44 0.50 0.015
c0.08 0.14 0.20 0.003
D2.80 2.90 3.04 0.110
E1.20 1.30 1.40 0.047
e1.78 1.90 2.04 0.070
L0.30 0.43 0.55 0.012
0.039 0.044
0.002 0.004
0.017 0.020
0.006 0.008
0.114 0.120
0.051 0.055
0.075 0.080
0.017 0.022
NOM MAX
L1
H
STYLE 22:
PIN 1. RETURN
2. OUTPUT
3. INPUT
STYLE 6:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
STYLE 7:
PIN 1. EMITTER
2. BASE
3. COLLECTOR
STYLE 8:
PIN 1. ANODE
2. NO CONNECTION
3. CATHODE
STYLE 9:
PIN 1. ANODE
2. ANODE
3. CATHODE
STYLE 10:
PIN 1. DRAIN
2. SOURCE
3. GATE
STYLE 11:
PIN 1. ANODE
2. CATHODE
3. CATHODE−ANODE
STYLE 12:
PIN 1. CATHODE
2. CATHODE
3. ANODE
STYLE 13:
PIN 1. SOURCE
2. DRAIN
3. GATE
STYLE 14:
PIN 1. CATHODE
2. GATE
3. ANODE
STYLE 15:
PIN 1. GATE
2. CATHODE
3. ANODE
STYLE 16:
PIN 1. ANODE
2. CATHODE
3. CATHODE
STYLE 17:
PIN 1. NO CONNECTION
2. ANODE
3. CATHODE
STYLE 18:
PIN 1. NO CONNECTION
2. CATHODE
3. ANODE
STYLE 19:
PIN 1. CATHODE
2. ANODE
3. CATHODE−ANODE
STYLE 23:
PIN 1. ANODE
2. ANODE
3. CATHODE
STYLE 20:
PIN 1. CATHODE
2. ANODE
3. GATE
STYLE 21:
PIN 1. GATE
2. SOURCE
3. DRAIN
STYLE 1 THRU 5:
CANCELLED
STYLE 24:
PIN 1. GATE
2. DRAIN
3. SOURCE
STYLE 25:
PIN 1. ANODE
2. CATHODE
3. GATE
STYLE 26:
PIN 1. CATHODE
2. ANODE
3. NO CONNECTION
STYLE 27:
PIN 1. CATHODE
2. CATHODE
3. CATHODE
2.10 2.40 2.64 0.083 0.094 0.104
HE
0.35 0.54 0.69 0.014 0.021 0.027
c
0−−− 10 0 −−− 10
T°°°°
T
3X
TOP VIEW
SIDE VIEW
END VIEW
2.90
0.80
DIMENSIONS: MILLIMETERS
0.90
PITCH
3X
3X 0.95
RECOMMENDED
STYLE 28:
PIN 1. ANODE
2. ANODE
3. ANODE
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
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SOT−23 (TO−236)
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