BCW68GL General Purpose Transistor PNP Silicon Features * NSV Prefix for Automotive and Other Applications Requiring * www.onsemi.com Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant COLLECTOR 3 1 BASE 2 EMITTER MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage VCEO -45 Vdc Collector-Base Voltage VCBO -60 Vdc Emitter-Base Voltage VEBO -5.0 Vdc IC -800 mAdc Collector Current - Continuous 3 SOT-23 CASE 318 STYLE 6 1 2 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. MARKING DIAGRAM THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipation FR-5 Board (Note 1) TA = 25C Derate above 25C PD 225 mW 1.8 mW/C RqJA 556 C/W PD 300 mW Thermal Resistance, Junction-to-Ambient Total Device Dissipation Alumina Substrate (Note 2) TA = 25C Derate above 25C Thermal Resistance, Junction-to-Ambient Junction and Storage Temperature 2.4 mW/C RqJA 417 C/W TJ, Tstg -55 to +150 C 1. FR-5 = 1.0 0.75 0.062 in. 2. Alumina = 0.4 0.3 0.024 in 99.5% alumina. DG MG G DG M G = Specific Device Code = Date Code* = Pb-Free Package (Note: Microdot may be in either location) *Date Code orientation and/or overbar may vary depending upon manufacturing location. ORDERING INFORMATION Device Package Shipping BCW68GLT1G, NSVBCW68GLT1G SOT-23 (Pb-Free) 3000 / Tape & Reel BCW68GLT3G SOT-23 (Pb-Free) 10000 / Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. (c) Semiconductor Components Industries, LLC, 1994 November, 2016 - Rev. 8 1 Publication Order Number: BCW68GLT1/D BCW68GL ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Collector-Emitter Breakdown Voltage (IC = -10 mAdc, IB = 0) V(BR)CEO -45 - - Vdc Collector-Emitter Breakdown Voltage (IC = -10 mAdc, VEB = 0) V(BR)CES -60 - - Vdc Emitter-Base Breakdown Voltage (IE = -10 mAdc, IC = 0) V(BR)EBO -5.0 - - Vdc - - - - -20 -10 nAdc mAdc - - -20 nAdc 120 160 60 - - - 400 - - OFF CHARACTERISTICS Collector Cutoff Current (VCE= -45 Vdc, IE = 0) (VCE= -45 Vdc, IB = 0, TA = 150C) ICES Emitter Cutoff Current (VEB = -4.0 Vdc, IC = 0) IEBO ON CHARACTERISTICS DC Current Gain (IC = -10 mAdc, VCE = -1.0 Vdc) (IC = -100 mAdc, VCE = -1.0 Vdc) (IC = -300 mAdc, VCE = -1.0 Vdc) hFE - Collector-Emitter Saturation Voltage (IC = -500 mAdc, IB = -50 mAdc) VCE(sat) - - -0.7 Vdc Base-Emitter Saturation Voltage (IC = -500 mAdc, IB = -50 mAdc) VBE(sat) - - -2.0 Vdc fT 100 - - MHz Output Capacitance (VCB= -10 Vdc, IE = 0, f = 1.0 MHz) Cobo - - 18 pF Input Capacitance (VEB= -0.5 Vdc, IC = 0, f = 1.0 MHz) Cibo - - 105 pF Noise Figure (IC= -0.2 mAdc, VCE = -5.0 Vdc, RS = 1.0 kW, f = 1.0 kHz, BW = 200 Hz) NF - - 10 dB SMALL-SIGNAL CHARACTERISTICS Current-Gain - Bandwidth Product (IC = -20 mAdc, VCE = -10 Vdc, f = 100 MHz) Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. www.onsemi.com 2 BCW68GL TYPICAL CHARACTERISTICS 500 1 VCE = 1 V VCE(sat), COLLECTOR-EMITTER SATURATION VOLTAGE (V) hFE, DC CURRENT GAIN 150C 400 25C 300 200 -55C 100 0 150C 25C -55C 0.1 0.01 0.001 0.01 0.1 0.001 1 0.1 1 IC, COLLECTOR CURRENT (A) Figure 1. DC Current Gain vs. Collector Current Figure 2. Collector Emitter Saturation Voltage vs. Collector Current VBE(on), BASE-EMITTER VOLTAGE (V) 1.0 0.01 IC, COLLECTOR CURRENT (A) 1.1 -55C IC/IB = 10 0.9 25C 0.8 150C 0.7 0.6 0.5 0.4 0.3 0.2 0.0001 0.001 0.01 0.1 1 1.2 1.1 VCE = 5 V 1.0 -55C 0.9 0.8 25C 0.7 0.6 0.5 150C 0.4 0.3 0.2 0.0001 0.001 0.01 0.1 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) Figure 3. Base Emitter Saturation Voltage vs. Collector Current Figure 4. Base Emitter Voltage vs. Collector Current 1000 fT, CURRENT-GAIN-BANDWIDTH PRODUCT (MHz) VBE(sat), BASE-EMITTER SATURATION VOLTAGE (V) IC/IB = 10 VCE = 1 V TA = 25C 100 10 0.1 1 10 100 1000 IC, COLLECTOR CURRENT (mA) Figure 5. Current Gain Bandwidth Product vs. Collector Current www.onsemi.com 3 1 BCW68GL VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) TYPICAL CHARACTERISTICS -1.0 TJ = 25C -0.8 IC = -500 mA -0.6 -0.4 IC = -300 mA -0.2 IC = -100 mA IC = -10 mA 0 -0.01 -0.1 -1.0 -10 IB, BASE CURRENT (mA) -100 100 +1.0 qVC for VCE(sat) C, CAPACITANCE (pF) V, TEMPERATURE COEFFICIENTS (mV/C) Figure 6. Saturation Region 0 -1.0 -2.0 -1.0 qVB for VBE -10 -100 IC, COLLECTOR CURRENT (mA) Cib 10 Cob 1.0 -0.1 -1000 Figure 7. Temperature Coefficients -1.0 -10 VR, REVERSE VOLTAGE (VOLTS) Figure 8. Capacitances www.onsemi.com 4 -100 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS SOT-23 (TO-236) CASE 318-08 ISSUE AS DATE 30 JAN 2018 SCALE 4:1 D 0.25 3 E 1 2 T HE NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF THE BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. DIM A A1 b c D E e L L1 HE T L 3X b L1 VIEW C e TOP VIEW A A1 SIDE VIEW SEE VIEW C c MIN 0.89 0.01 0.37 0.08 2.80 1.20 1.78 0.30 0.35 2.10 0 MILLIMETERS NOM MAX 1.00 1.11 0.06 0.10 0.44 0.50 0.14 0.20 2.90 3.04 1.30 1.40 1.90 2.04 0.43 0.55 0.54 0.69 2.40 2.64 --- 10 MIN 0.035 0.000 0.015 0.003 0.110 0.047 0.070 0.012 0.014 0.083 0 INCHES NOM 0.039 0.002 0.017 0.006 0.114 0.051 0.075 0.017 0.021 0.094 --- MAX 0.044 0.004 0.020 0.008 0.120 0.055 0.080 0.022 0.027 0.104 10 GENERIC MARKING DIAGRAM* END VIEW RECOMMENDED SOLDERING FOOTPRINT XXXMG G 1 3X 2.90 3X XXX = Specific Device Code M = Date Code G = Pb-Free Package 0.90 *This information is generic. Please refer to device data sheet for actual part marking. Pb-Free indicator, "G" or microdot " G", may or may not be present. 0.95 PITCH 0.80 DIMENSIONS: MILLIMETERS STYLE 1 THRU 5: CANCELLED STYLE 6: PIN 1. BASE 2. EMITTER 3. COLLECTOR STYLE 7: PIN 1. EMITTER 2. BASE 3. COLLECTOR STYLE 9: PIN 1. ANODE 2. ANODE 3. CATHODE STYLE 10: PIN 1. DRAIN 2. SOURCE 3. GATE STYLE 11: STYLE 12: PIN 1. ANODE PIN 1. CATHODE 2. CATHODE 2. CATHODE 3. CATHODE-ANODE 3. ANODE STYLE 15: PIN 1. GATE 2. CATHODE 3. ANODE STYLE 16: PIN 1. ANODE 2. CATHODE 3. CATHODE STYLE 17: PIN 1. NO CONNECTION 2. ANODE 3. CATHODE STYLE 18: STYLE 19: STYLE 20: PIN 1. NO CONNECTION PIN 1. CATHODE PIN 1. CATHODE 2. CATHODE 2. ANODE 2. ANODE 3. GATE 3. ANODE 3. CATHODE-ANODE STYLE 21: PIN 1. GATE 2. SOURCE 3. DRAIN STYLE 22: PIN 1. RETURN 2. OUTPUT 3. INPUT STYLE 23: PIN 1. ANODE 2. ANODE 3. CATHODE STYLE 24: PIN 1. GATE 2. DRAIN 3. SOURCE STYLE 27: PIN 1. CATHODE 2. CATHODE 3. CATHODE STYLE 28: PIN 1. ANODE 2. ANODE 3. ANODE DOCUMENT NUMBER: DESCRIPTION: 98ASB42226B SOT-23 (TO-236) STYLE 8: PIN 1. ANODE 2. NO CONNECTION 3. CATHODE STYLE 13: PIN 1. SOURCE 2. DRAIN 3. GATE STYLE 25: PIN 1. ANODE 2. CATHODE 3. GATE STYLE 14: PIN 1. CATHODE 2. GATE 3. ANODE STYLE 26: PIN 1. CATHODE 2. ANODE 3. NO CONNECTION Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped "CONTROLLED COPY" in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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