MJ10023 - ON Semiconductor - Datasheet.Support

Motorola Bipolar Power Transistor Device Data

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The MJ10023 Darlington transistor is designed for high–voltage, high–speed,

power switching in inductive circuits where fall time is critical. It is particularly suited

for line–operated switchmode applications such as:

•AC and DC Motor Controls

•Switching Regulators

•Inverters

•Solenoid and Relay Drivers

•Fast Turn–Off Times

150 ns Inductive Fall Time @ 25

C (Typ)

300 ns Inductive Storage Time @ 25

C (Typ)

•Operating Temperature Range – 65 to + 200

•100

C Performance Specified for:

Reversed Biased SOA with Inductive Loads

Switching Times with Inductive Loads

Saturation Voltages

Leakage Currents

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

MAXIMUM RATINGS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Rating

ÎÎÎÎÎÎ

Symbol

ÎÎÎÎÎÎÎÎ

Max

ÎÎÎÎÎ

Unit

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector–Emitter Voltage

ÎÎÎÎÎÎ

VCEO

ÎÎÎÎÎÎÎÎ

400

ÎÎÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector–Emitter V oltage

ÎÎÎÎÎÎ

VCEV

ÎÎÎÎÎÎÎÎ

600

ÎÎÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Emitter Base Voltage

ÎÎÎÎÎÎ

VEB

ÎÎÎÎÎÎÎÎ

ÎÎÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector Current — Continuous

— Peak (1)

ÎÎÎÎÎÎ

ICM

ÎÎÎÎÎÎÎÎ

ÎÎÎÎÎ

Adc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Base Current — Continuous

— Peak (1)

ÎÎÎÎÎÎ

ÎÎÎÎ

ÎÎÎÎÎÎ

IBM

ÎÎÎÎÎÎÎÎ

ÎÎÎÎÎÎ

ÎÎÎÎÎÎÎÎ

ÎÎÎÎÎ

ÎÎÎ

ÎÎÎÎÎ

Adc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Total Power Dissipation @ TC = 25

@ TC = 100

Derate above 25

ÎÎÎÎÎÎ

ÎÎÎÎ

ÎÎÎÎÎÎ

ÎÎÎÎÎÎÎÎ

ÎÎÎÎÎÎ

ÎÎÎÎÎÎÎÎ

250

143

1.43

ÎÎÎÎÎ

ÎÎÎ

ÎÎÎÎÎ

Watts

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Operating and Storage Junction Temperature Range

ÎÎÎÎÎÎ

TJ, Tstg

ÎÎÎÎÎÎÎÎ

–65 to +200

ÎÎÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

THERMAL CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Characteristic

ÎÎÎÎÎÎ

ÎÎÎÎ

Symbol

ÎÎÎÎÎÎÎÎ

ÎÎÎÎÎÎ

Max

ÎÎÎÎÎ

ÎÎÎ

Unit

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Thermal Resistance, Junction to Case

ÎÎÎÎÎÎ

ÎÎÎÎ

RθJC

ÎÎÎÎÎÎÎÎ

ÎÎÎÎÎÎ

0.7

ÎÎÎÎÎ

ÎÎÎ

C/W

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Maximum Lead Temperature for Soldering

Purposes: 1/8″ from Case for 5 Seconds

ÎÎÎÎÎÎ

ÎÎÎÎ

ÎÎÎÎÎÎ

ÎÎÎÎÎÎÎÎ

ÎÎÎÎÎÎ

ÎÎÎÎÎÎÎÎ

275

ÎÎÎÎÎ

ÎÎÎ

ÎÎÎÎÎ

(1) Pulse Test: Pulse Width = 5 ms, Duty Cycle

10%.

Designer’s and SWITCHMODE are trademarks of Motorola, Inc.

Designer’s Data for “W orst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit

curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.



SEMICONDUCTOR TECHNICAL DATA Order this document

by MJ10023/D

 Motorola, Inc. 1998

40 AMPERE

NPN SILICON

POWER DARLINGTON

TRANSISTOR

400 VOLTS

250 WATTS



CASE 197A–05

TO–204AE (T O–3)

≈

100

≈

MJ10023

2 Motorola Bipolar Power Transistor Device Data

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ELECTRICAL CHARACTERISTICS (TC = 25

C unless otherwise noted)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Characteristic

ÎÎÎÎ

Symbol

ÎÎÎÎ

Min

ÎÎÎÎ

Typ

ÎÎÎ

Max

ÎÎÎÎ

Unit

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

OFF CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector–Emitter Sustaining V oltage (Table 1)

(IC = 100 mA, IB = 0)

ÎÎÎÎ

ÎÎÎ

ÎÎÎÎ

VCEO(sus)

ÎÎÎÎ

ÎÎ

ÎÎÎÎ

400

ÎÎÎÎ

ÎÎ

ÎÎÎÎ

—

ÎÎÎ

ÎÎ

ÎÎÎ

—

ÎÎÎÎ

ÎÎ

ÎÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector Cutoff Current

(VCEV = Rated Value, VBE(off) = 1.5 Vdc)

(VCEV = Rated Value, VBE(off) = 1.5 Vdc, TC = 150

ÎÎÎÎ

ÎÎÎ

ÎÎÎÎ

ICEV

ÎÎÎÎ

ÎÎ

ÎÎÎÎ

—

ÎÎÎÎ

ÎÎ

ÎÎÎÎ

—

ÎÎÎ

ÎÎ

ÎÎÎ

0.25

5.0

ÎÎÎÎ

ÎÎ

ÎÎÎÎ

mAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector Cutoff Current

(VCE = Rated VCEV, RBE = 50 Ω, TC = 100

ÎÎÎÎ

ÎÎÎ

ÎÎÎÎ

ICER

ÎÎÎÎ

ÎÎ

ÎÎÎÎ

—

ÎÎÎÎ

ÎÎ

ÎÎÎÎ

—

ÎÎÎ

ÎÎ

ÎÎÎ

5.0

ÎÎÎÎ

ÎÎ

ÎÎÎÎ

mAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Emitter Cutoff Current

(VEB = 2.0 V, IC = O)

ÎÎÎÎ

ÎÎÎ

ÎÎÎÎ

IEBO

ÎÎÎÎ

ÎÎ

ÎÎÎÎ

—

ÎÎÎÎ

ÎÎ

ÎÎÎÎ

—

ÎÎÎ

ÎÎ

ÎÎÎ

175

ÎÎÎÎ

ÎÎ

ÎÎÎÎ

mAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

SECOND BREAKDOWN

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Second Breakdown Collector Current with Base Forward Biased

ÎÎÎÎ

IS/b

ÎÎÎÎ

ÎÎÎÎÎÎ

See Figure 13

ÎÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Clamped Inductive SOA with Base Reverse Biased

ÎÎÎÎ

RBSOA

ÎÎÎÎ

ÎÎÎÎÎÎ

See Figure 14

ÎÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ON CHARACTERISTICS (1)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

DC Current Gain

(IC = 10 Adc, VCE = 5.0 V)

ÎÎÎÎ

ÎÎÎ

ÎÎÎÎ

hFE

ÎÎÎÎ

ÎÎ

ÎÎÎÎ

ÎÎ

ÎÎÎÎ

—

ÎÎÎ

ÎÎ

ÎÎÎ

600

ÎÎÎÎ

ÎÎ

ÎÎÎÎ

—

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector–Emitter Saturation V oltage

(IC = 20 Adc, IB = 1.0 Adc)

(IC = 40 Adc, IB = 5.0 Adc)

(IC = 20 Adc, IB = 10 Adc, TC = 100

ÎÎÎÎ

ÎÎÎ

ÎÎÎÎ

VCE(sat)

ÎÎÎÎ

ÎÎ

ÎÎÎÎ

—

ÎÎÎÎ

ÎÎ

ÎÎÎÎ

—

ÎÎÎ

ÎÎ

ÎÎÎ

2.2

5.0

2.5

ÎÎÎÎ

ÎÎ

ÎÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Base–Emitter Saturation Voltage

(IC = 20 Adc, IB = 1.2 Adc)

(IC = 20 Adc, IB = 1.2 Adc, TC = 100

ÎÎÎÎ

ÎÎÎ

ÎÎÎÎ

VBE(sat)

ÎÎÎÎ

ÎÎ

ÎÎÎÎ

—

ÎÎÎÎ

ÎÎ

ÎÎÎÎ

—

ÎÎÎ

ÎÎ

ÎÎÎ

2.5

ÎÎÎÎ

ÎÎ

ÎÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Diode Forward Voltage

(IF = 20 Adc)

ÎÎÎÎ

—

ÎÎÎÎ

2.5

ÎÎÎ

5.0

ÎÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

DYNAMIC CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Output Capacitance

(VCB = 10 Vdc, IE = 0, ftest = 1.0 kHz)

ÎÎÎÎ

ÎÎÎ

ÎÎÎÎ

Cob

ÎÎÎÎ

ÎÎ

ÎÎÎÎ

150

ÎÎÎÎ

ÎÎ

ÎÎÎÎ

—

ÎÎÎ

ÎÎ

ÎÎÎ

600

ÎÎÎÎ

ÎÎ

ÎÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

SWITCHING CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Resistive Load (Table 1)

ÎÎÎÎÎÎÎÎ

Delay T ime

ÎÎÎÎÎÎÎÎÎÎÎÎÎ

(V 250 Vd I 20 A I 1 0 Ad

ÎÎÎÎ

—

ÎÎÎÎ

0.03

ÎÎÎ

0.2

ÎÎÎÎ

µs

ÎÎÎÎÎÎÎÎ

Rise T ime

ÎÎÎÎÎÎÎÎÎÎÎÎÎ

(VCC = 250 Vdc, IC = 20 A, IB1 = 1.0 Adc,

VBE(off) =50Vt

p=50µs

ÎÎÎÎ

—

ÎÎÎÎ

0.4

ÎÎÎ

1.2

ÎÎÎÎ

µs

ÎÎÎÎÎÎÎÎ

Storage T ime

ÎÎÎÎÎÎÎÎÎÎÎÎÎ

BE(off) =

p =

µs,

Duty Cycle

2.0%)

ÎÎÎÎ

—

ÎÎÎÎ

0.9

ÎÎÎ

2.5

ÎÎÎÎ

µs

ÎÎÎÎÎÎÎÎ

Fall T ime

ÎÎÎÎÎÎÎÎÎÎÎÎÎ

yy )

ÎÎÎÎ

—

ÎÎÎÎ

0.3

ÎÎÎ

0.9

ÎÎÎÎ

µs

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Inductive Load, Clamped (Table 1)

ÎÎÎÎÎÎÎÎ

Storage T ime

ÎÎÎÎÎÎÎÎÎÎÎÎÎ

(I 20 A V 250 V I 1 0 A

ÎÎÎÎ

tsv

ÎÎÎÎ

—

ÎÎÎÎ

1.9

ÎÎÎ

4.4

ÎÎÎÎ

µs

ÎÎÎÎÎÎÎÎ

Crossover Time

ÎÎÎÎÎÎÎÎÎÎÎÎÎ

(ICM = 20 A, VCEM = 250 V, IB1 = 1.0 A,

BE(off)

= 5 V, T

= 100

)

ÎÎÎÎ

—

ÎÎÎÎ

0.6

ÎÎÎ

2.0

ÎÎÎÎ

µs

ÎÎÎÎÎÎÎÎ

Fall T ime

ÎÎÎÎÎÎÎÎÎÎÎÎÎ

VBE(off)

100 C)

ÎÎÎÎ

tfi

ÎÎÎÎ

—

ÎÎÎÎ

0.3

ÎÎÎ

—

ÎÎÎÎ

µs

ÎÎÎÎÎÎÎÎ

Storage T ime

ÎÎÎÎÎÎÎÎÎÎÎÎÎ

(I 20 A V 250 V I 1 0 A

ÎÎÎÎ

tsv

ÎÎÎÎ

—

ÎÎÎÎ

1.0

ÎÎÎ

—

ÎÎÎÎ

µs

ÎÎÎÎÎÎÎÎ

Crossover Time

ÎÎÎÎÎÎÎÎÎÎÎÎÎ

(ICM = 20 A, VCEM = 250 V, IB1 = 1.0 A,

BE(off)

= 5 V, T

= 25

)

ÎÎÎÎ

—

ÎÎÎÎ

0.3

ÎÎÎ

—

ÎÎÎÎ

µs

ÎÎÎÎÎÎÎÎ

Fall T ime

ÎÎÎÎÎÎÎÎÎÎÎÎÎ

VBE(off)

25 C)

ÎÎÎÎ

tfi

ÎÎÎÎ

—

ÎÎÎÎ

0.15

ÎÎÎ

—

ÎÎÎÎ

µs

(1) Pulse Test: PW = 300 µs, Duty Cycle

2%.

MJ10023

Motorola Bipolar Power Transistor Device Data

, COLLECTOR CURRENT ( A)

ICVCE, COLLECTOR–EMITTER VOLTAGE (VOL TS)

VCE, COLLECTOR–EMITTER VOLTAGE (VOL TS)

1.0 2.0 5.0 400.4 10 1.0

300

Figure 1. DC Current Gain

IC, COLLECTOR CURRENT (AMPS)

1.0 2.0 5.0 40

200

0.4

Figure 2. Collector Saturation Region

IC, COLLECTOR CURRENT (AMPS)

5.0

2.1

1.8

0.9

0.6

Figure 3. Collector–Emitter Saturation Voltage

IC, COLLECTOR CURRENT (AMPS)

5.0

0.01

Figure 4. Base–Emitter Saturation Voltage

IB, BASE CURRENT (AMP)

0.1 10

4.5

0.5

hFE, DC CURRENT GAIN

VCE = 5 V

0.3

IC = 10 A

VBE(sat), BASE–EMITTER

4.5

VR, REVERSE VOLTAGE (VOL TS)

20 100

400

–0.2

Figure 5. Collector Cutoff Region

VBE, BASE–EMITTER VOLTAGE (VOLTS)

102

101

10–1

Figure 6. Cob, Output Capacitance

104

103

100

0 +0.2 +0.8

VCE = 250 V

TJ = 125

100

C, CAPACITANCE (pF)

100

300.4 10

2.0 10 4020

+0.6

200

100

4002005010

IC/IB = 10

TJ = 100

TJ = 25

5.02.01.00.50.20.02 0.05

4.0

3.5

3.0

2.5

2.0

1.5

1.0

1.2

1.5

2.4

2.7

3.0

2.1

1.8

0.9

0.6

0.3

1.2

1.5

2.4

2.7

3.0

TJ = 100

IC = 20 A

VCE @ 100

VCE @ 25

CVBE @ 100

VBE @ 25

IC = 40 A

IC/IB = 10

+0.4

TYPICAL ELECTRICAL CHARACTERISTICS

MJ10023

4 Motorola Bipolar Power Transistor Device Data

Table 1. Test Conditions for Dynamic Performance

VCEO(sus) RBSOA AND INDUCTIVE SWITCHING RESISTIVE SWITCHING

INPUT

CONDITIONS

CIRCUIT

VALUES

TEST CIRCUITS

Ω

PW Varied to Attain

IC = 100 mA

TURN–ON TIME

IB1 adjusted to

obtain the forced

hFE desired

TURN–OFF TIME

Use inductive switching

driver as the input to

the resistive test circuit.

t1 Adjusted to

Obtain IC

[

Lcoil (ICM)

VCC

[

Lcoil (ICM)

Vclamp

Test Equipment

Scope — Tektronix

475 or Equivalent

RESISTIVE TEST CIRCUIT

IB1

5 V

INDUCTIVE TEST CIRCUIT

Lcoil = 10 mH, VCC = 10 V

Rcoil = 0.7 Ω

Vclamp = VCEO(sus)

Lcoil = 180 µH

Rcoil = 0.05 Ω

VCC = 20 V

VCC = 250 V

RL = 12.5 Ω

Pulse Width = 25 µs

INPUT

Rcoil

Lcoil

VCC

Vclamp

RS =

0.1

Ω

1N4937

EQUIVALENT

TUT

SEE ABOVE FOR

DETAILED CONDITIONS

ICM tf Clamped

tft

Vclamp

TIME

VCEM

OUTPUT WAVEFORMS

TUT

VCC

Figure 7. Inductive Switching Measurements Figure 8. Typical Peak Reverse Base Current

0VBE(off), REVERSE BASE VOLTAGE (VOLTS)

1.0 2.0 3.0 4.0 8.0

7.0

5.0

3.0

IB2(pk), BASE CURRENT (AMPS)

IC = 20 A

IB1 = 1 A

Vclamp = 250 V

TJ = 25

9.0

8.0

6.0

4.0

2.0

1.0

7.06.05.0

Figure 9. Typical Inductive Switching Times

2.0

0VBE(off), BASE–EMITTER VOLTAGE (VOLTS)

01.0 2.0 3.0 4.0 8.0

1.0

0.75

0.5

ICM = 20 A

IB1 = 1 A

VCEM = 250 V

1.75

1.25

0.25

7.06.05.0

tsv @ 100

tsv @ 25

tc @ 100

tc @ 25

t, TIME ( s)

tfi

trv

VCE 90% IB1

ICM VCEM

90% VCEM 90% ICM

10%

ICM 2% IC

tsv tti

TIME

Vclamp

10% VCEM

1.5

MJ10023

Motorola Bipolar Power Transistor Device Data

SWITCHING TIMES NOTE

In resistive switching circuits, rise, fall, and storage times

have been defined and apply to both current and voltage

waveforms since they are in phase. However, for inductive

loads which are common to SWITCHMODE power supplies

and hammer drivers, current and voltage waveforms are not

in phase. Therefore, separate measurements must be made

on each waveform to determine the total switching time. For

this reason, the following new terms have been defined.

tsv = Voltage Storage Time, 90% IB1 to 10% VCEM

trv = Voltage Rise Time, 10–90% VCEM

tfi = Current Fall Time, 90–10% ICM

tti = Current Tail, 10–2% ICM

tc = Crossover Time, 10% VCEM to 10% ICM

An enlarged portion of the inductive switching waveform is

shown in Figure 7 to aid on the visual identity of these terms.

For the designer, there is minimal switching loss during

storage time and the predominant switching power losses

occur during the crossover interval and can be obtained us-

ing the standard equation from AN–222A:

PSWT = 1/2 VCCIC(tc)f

In general, trv + tfi

tc. However, at lower test currents this

relationship may not be valid.

As is common with most switching transistors, resistive

switching is specified at 25

C and has become a benchmark

for designers. However, for designers of high frequency con-

verter circuits, the user orinented specifications which make

this a “SWITCHMODE” transistor are the inductive switching

speeds (tc and tsv) which are guaranteed at 100

2.0 5.0 10 20 400.4 1.0

t, TIME ( s)

0.02

0.05

0.1

0.2

0.5

1.0

2.0

Figure 10. Typical Turn–On Switching Times

IC, COLLECTOR CURRENT (AMPS)

2.0 5.0 10 20 40

Figure 11. Typical Turn–Off Switching Times

IC, COLLECTOR CURRENT (AMPS)

t, TIME ( s)

Figure 12. Thermal Response

t, TIME (ms)

1.0

0.010.1

0.1

r(t), TRANSIENT THERMAL

1.0 10 100 10000

JC(t) = r(t) R

JC = 0.7

C/W MAX

D CURVES APPLY FOR POWER

PULSE TRAIN SHOWN

READ TIME AT t1

TJ(pk) – TC = P(pk) R

JC(t)

P(pk)

t1t2

SINGLE PULSE

RESIST ANCE (NORMALIZED)

1000

0.02

0.05

0.1

0.2

0.5

1.0

2.0

VCC = 250 V

IC/IB1 = 20

TJ = 25

Cts

0.4 1.0

VCC = 250 V

IC/IB1 = 20

VBE(off) = 5 V

D = 0.5

0.5

0.2

0.05

DUTY CYCLE, D = t1/t2

0.2

0.1

RESISTIVE SWITCHING

MJ10023

6 Motorola Bipolar Power Transistor Device Data

The Safe Operating Area figures shown in Figures 13 and 14 are

specified for these devices under the test conditions shown.

ICM

VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)

2.0 5.0 10 20 501.0

1.0

VCEM, PEAK COLLECTOR–EMITTER VOLTAGE (VOLTS)

100 300 500

TC = 25

IC/IB

≥

≤

100

, PEAK COLLECTOR CURRENT (AMPS)

100 200 400

0.1

0.01

IC, COLLECTOR CURRENT (AMPS)

200 400 700

(TURN–ON SWITCHING)

5.0

0.5

0.05

2.0

0.2

0.02

600

100

Figure 13. Maximum Forward Bias Safe

Operating Area

Figure 14. Maximum RBSOA, Reverse Bias

Safe Operating Area

TURN–OFF LOAD LINE

BONDING WIRE LTD

THERMAL LTD

SECOND BREAKDOWN LTD

2 V

≤

VBE(off)

≤

8 V

RBE = 24

Ω

SAFE OPERATING AREA INFORMATION

FORWARD BIAS

There are two limitations on the power handling ability of a

transistor: average junction temperature and second break-

down. Safe operating area curves indicate IC – VCE limits of

the transistor that must be observed for reliable operation;

i.e., the transistor must not be subjected to greater dissipa-

tion than the curves indicate.

The data of Figure 13 is based on TC = 25

C; TJ(pk) is

variable depending on power level. Second breakdown pulse

limits are valid for duty cycles to 10% but must be derated

when TC ≥ 25°C. Second breakdown limitations do not der-

ate the same as thermal limitations. Allowable current at the

voltages shown on Figure 13 may be found at any case tem-

perature by using the appropriate curve on Figure 15.

TJ(pk) may be calculated from the data in Figure 12. At

high case temperatures, thermal limitations will reduce the

power that can be handled to values less than the limitations

imposed by second breakdown.

REVERSE BIAS

For inductive loads, high voltage and high current must be

sustained simultaneously during turn–off, in most cases, with

the base to emitter junction reverse biased. Under these

conditions the collector voltage must be held to a safe level

at or below a specific value of collector current. This can be

accomplished by several means such as active clamping,

RC snubbing, load line shaping, etc. The safe level for these

devices is specified as Reverse Bias Safe Operating Area

and represents the voltage–current condition allowable dur-

ing reverse biased turn–off. This rating is verified under

clamped conditions so that the device is never subjected to

an avalanche mode. Figure 14 gives the RBSOA character-

istics.

TC, CASE TEMPERATURE (

40 80 120

100

POWER DERATING F ACT OR (%)

200

SECOND BREAKDOWN

DERATING

160

THERMAL

DERATING

Figure 15. Power Derating

MJ10023

Motorola Bipolar Power Transistor Device Data

PACKAGE DIMENSIONS

CASE 197A–05

TO–204AE (TO–3)

ISSUE J

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

STYLE 1:

PIN 1. BASE

2. EMITTER

CASE: COLLECTOR

DIM MIN MAX MIN MAX

MILLIMETERSINCHES

A1.530 REF 38.86 REF

B0.990 1.050 25.15 26.67

C0.250 0.335 6.35 8.51

D0.057 0.063 1.45 1.60

E0.060 0.070 1.53 1.77

G0.430 BSC 10.92 BSC

H0.215 BSC 5.46 BSC

K0.440 0.480 11.18 12.19

L0.665 BSC 16.89 BSC

N0.760 0.830 19.31 21.08

Q0.151 0.165 3.84 4.19

U1.187 BSC 30.15 BSC

V0.131 0.188 3.33 4.77

–T–

SEATING

PLANE

2 PLD

0.30 (0.012) Y M

0.25 (0.010) T

–Q–

–Y–

MJ10023

8 Motorola Bipolar Power Transistor Device Data

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MJ10023/D

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