1
RF Power MOSFET Transistor
150W, 100MHz-500MHz, 28V M/A-COM Products
Released; RoHS Compliant
UF28150J
• North America Tel: 800.366.2266 / Fax: 978.366.2266
• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macomtech.com for additional data sheets and product information.
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make
changes to the product(s) or information contained herein without notice.
ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions
is considering for development. Performance is based on target specifications, simulated results,
and/or prototype measurements. Commitment to develop is not guaranteed.
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.
Commitment to produce in volume is not guaranteed.
Features
• DMOS structure
• Lower capacitance for broadband operation
• Common source configuration
Package Outline
1. Exceeding any one or combination of these limits may cause permanent damage
to this device.
2. M/A-COM does not recommend sustained operation near these maximum limits.
3. At 25°C Tcase, unless noted.
ABSOLUTE MAXIMUM RATINGS1, 2, 3
Parameter Rating
Drain-Source Voltage 65
Gate-Source Voltage 20
Drain-Source Current 16*
Power Dissipation 389
Junction Temperature 200
Storage Temperature -65 to +150
Thermal Resistance 0.45
Symbol
VDS
VGS
IDS
PD
TJ
TSTG
ΘJC
Units
V
V
A
W
°C
°C
°C/W
ELECTRICAL SPECIFICATIONS: 25°C
Parameter Test Conditions Units Min. Max.
Drain-Source Breakdown Voltage VGS = 0.0 V, IDS = 20.0 mA* BVDSS 65 —
Drain-Source Leakage Current VDS = 28.0 V, VGS = 0.0V* IDSS — 4.0
Gate-Source Leakage Current VGS = 20 V, VDS = 0.0 V* IGSS — 4.0
Gate Threshold Voltage VDS = 10.0 V, IDS = 400.0 mA* VGS(TH) 2.0 6.0
Forward Transconductance VDS = 10.0 V, IDS = 4000.0 mA, ∆VGS = 1.0 V, 80µs pulse* GM 2.0 —
Input Capacitance VDS = 28.0V, F = 1.0 MHz* CISS — 180
Output Capacitance VDS = 28.0V, F = 1.0 MHz* COSS — 120
Reverse Capacitance VDS = 28.0V, F = 1.0 MHz* CRSS — 32
Power Gain VDD = 28.0 V, IDQ = 400.0 mA, POUT = 150.0 W, F = 500 MHz GP 8 —
Drain Efficiency VDD = 28.0 V, IDQ = 400.0 mA, POUT = 150.0 W, F = 500 MHz ηD 55 —
Load Mismatch Tolerance VDD = 28.0 V, IDQ = 400.0 mA, POUT = 150.0 W, F = 500 MHz VSWR-T — 10:1**
Notes:
* Per side
** At all phase angles
2
RF Power MOSFET Transistor
150W, 100MHz-500MHz, 28V M/A-COM Products
Released; RoHS Compliant
UF28150J
• North America Tel: 800.366.2266 / Fax: 978.366.2266
• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macomtech.com for additional data sheets and product information.
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make
changes to the product(s) or information contained herein without notice.
ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions
is considering for development. Performance is based on target specifications, simulated results,
and/or prototype measurements. Commitment to develop is not guaranteed.
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.
Commitment to produce in volume is not guaranteed.
CISS
COSS
COSS
VDS (V)
Typical Broadband Performance Curves
Capacitance (PF)
Capacitance vs Voltage
F=1.0 MHz
VDD (V)
Power Output (W)
Power Output vs Voltage
PIN =24 W IDQ =400 mA F=500 MHz
Frequency (MHz)
Gain (dB)
Gain vs Frequency
VDD =28V POUT =100W IDQ =400mA
Frequency (MHz)
Power Input (W)
Power Output (W)
Power Output vs Power Input
VDD =28W IDQ =400mA
Efficiency (%)
Efficiency vs Frequency
VDD =28W IDQ =400mA POUT =150W
65
60
55
50
3
RF Power MOSFET Transistor
150W, 100MHz-500MHz, 28V M/A-COM Products
Released; RoHS Compliant
UF28150J
• North America Tel: 800.366.2266 / Fax: 978.366.2266
• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macomtech.com for additional data sheets and product information.
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make
changes to the product(s) or information contained herein without notice.
ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions
is considering for development. Performance is based on target specifications, simulated results,
and/or prototype measurements. Commitment to develop is not guaranteed.
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.
Commitment to produce in volume is not guaranteed.
HANDLING PROCEDURES: STATIC SENSITIVITY
Please observe the following precautions to avoid damage:
DMOS devices are sensitive to electrostatic discharge (ESD) and can be damaged by static electricity. Proper ESD control
techniques should be used when handling these devices.
PARTS LIST
C23
C1
C12
C2, 3, 13, 22
C7,16
C4,6,15,17
C18
R1
R2
R3
T1
T2,3,4,5
T6
L1
L2
L3,4
RL1
Q1A, 1B
1.0pF
9.1pF
11pF
270pF
680pF
.015uF
50uF 50V
11K OHM .25 W. 10%
47 OHM .05 W. 10%
12 OHM .25 W. 10%
2.50’ OF 50 OHM (.85’ OD) SEMI-RIGID CABLE
2.50’ OF 10 OHM (.70’ OD) SEMI-RIGID CABLE
2.50’ OF 50 OHM (.141’ OD) SEMI-RIGID CABLE
5uH
16 TURNS OF NO. 18 AWG ON TORID CORE
(INDIANA GENERAL F6278-Q1)
4 TURNS OF NO. 18 AWG ON .125 DIAMETER
9 TURNS OF NO. 18 AWG ON 15 OHM 2 W. 10% RESISTOR
UF28150J
F (MHz) ZIN (Ω) ZLOAD (Ω)
100 3.7 - j5.9 3.0 - j0.7
300 2.7 - j5.9 2.6 - j0.55
500 2.5 - j2.9 2.5 - j0.5
VDD = 28V, IDQ = 400mA, POUT = 150W
TYPICAL OPTIMUM DEVICE IMPEDANCES
