BDW93, BDW93A, BDW93B, BDW93C NPN SILICON POWER DARLINGTONS Copyright (c) 1997, Power Innovations Limited, UK SEPTEMBER 1993 - REVISED MARCH 1997 Designed for Complementary Use with BDW94, BDW94A, BDW94B and BDW94C TO-220 PACKAGE (TOP VIEW) 80 W at 25C Case Temperature 12 A Continuous Collector Current B 1 Minimum hFE of 750 at 3 V, 5 A C 2 E 3 Pin 2 is in electrical contact with the mounting base. MDTRACA absolute maximum ratings at 25C case temperature (unless otherwise noted) RATING SYMBOL BDW93 Collector-base voltage (IE = 0) Collector-emitter voltage (IB = 0) BDW93A BDW93B VALUE VCBO 60 80 BDW93C 100 BDW93 45 BDW93A BDW93B UNIT 45 VCEO BDW93C 60 80 V V 100 V EBO 5 V Continuous collector current IC 12 A Continuous base current IB 0.3 A Continuous device dissipation at (or below) 25C case temperature (see Note 1) Ptot 80 W Continuous device dissipation at (or below) 25C free air temperature (see Note 2) Ptot 2 W Tj -65 to +150 C Tstg -65 to +150 C TA -65 to +150 C Emitter-base voltage Operating junction temperature range Storage temperature range Operating free-air temperature range NOTES: 1. Derate linearly to 150C case temperature at the rate of 0.64 W/C. 2. Derate linearly to 150C free air temperature at the rate of 16 mW/C. PRODUCT INFORMATION Information is current as of publication date. Products conform to specifications in accordance with the terms of Power Innovations standard warranty. Production processing does not necessarily include testing of all parameters. 1 BDW93, BDW93A, BDW93B, BDW93C NPN SILICON POWER DARLINGTONS SEPTEMBER 1993 - REVISED MARCH 1997 electrical characteristics at 25C case temperature (unless otherwise noted) PARAMETER V (BR)CEO ICEO ICBO IEBO hFE VCE(sat) V BE(sat) VEC TEST CONDITIONS Collector-emitter 45 BDW93A 60 BDW93B 80 BDW93C 100 TYP MAX IC = 100 mA IB = 0 VCB = 40 V IB = 0 BDW93 1 Collector-emitter V CB = 60 V IB = 0 BDW93A 1 cut-off current V CB = 80 V IB = 0 BDW93B 1 V CB = 80 V IB = 0 BDW93C VCB = 45 V IE = 0 BDW93 0.1 V CB = 60 V IE = 0 BDW93A 0.1 V CB = 80 V IE = 0 BDW93B 0.1 Collector cut-off V CB = 100 V IE = 0 BDW93C 0.1 current V CB = 45 V IE = 0 TC = 150C BDW93 5 V CB = 60 V IE = 0 TC = 150C BDW93A 5 V CB = 80 V IE = 0 TC = 150C BDW93B 5 V CB = 100 V IE = 0 TC = 150C BDW93C 5 VEB = 5V IC = 0 breakdown voltage Emitter cut-off current Forward current transfer ratio (see Note 3) MIN BDW93 VCE = 3V IC = 3V IC = 10 A V CE = 3V IC = 5A 20 mA IC = 5A Collector-emitter IB = saturation voltage IB = 100 mA Base-emitter IB = saturation voltage IB = 100 mA 20 mA 5A IC = 10 A mA 1 mA mA 1000 3A IC = 10 A IC = V 2 V CE = UNIT (see Notes 3 and 4) 100 750 20000 2 (see Notes 3 and 4) 3 2.5 (see Notes 3 and 4) 4 Parallel diode IE = 5A IB = 0 2 forward voltage IE = 10 A IB = 0 4 V V V NOTES: 3. These parameters must be measured using pulse techniques, tp = 300 s, duty cycle 2%. 4. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts. thermal characteristics MAX UNIT RJC Junction to case thermal resistance PARAMETER 1.56 C/W RJA Junction to free air thermal resistance 62.5 C/W PRODUCT 2 INFORMATION MIN TYP BDW93, BDW93A, BDW93B, BDW93C NPN SILICON POWER DARLINGTONS SEPTEMBER 1993 - REVISED MARCH 1997 TYPICAL CHARACTERISTICS TYPICAL DC CURRENT GAIN vs COLLECTOR CURRENT VCE(sat) - Collector-Emitter Saturation Voltage - V TCS130AE 50000 hFE - Typical DC Current Gain COLLECTOR-EMITTER SATURATION VOLTAGE vs COLLECTOR CURRENT TC = -40C TC = 25C TC = 100C 10000 1000 VCE = 3 V t p = 300 s, duty cycle < 2% 100 0*5 1*0 10 TCS130AG 3*0 tp = 300 s, duty cycle < 2% IB = IC / 100 2*5 2*0 1*5 1*0 TC = -40C TC = 25C TC = 100C 0*5 20 0 0*5 1*0 IC - Collector Current - A 10 20 IC - Collector Current - A Figure 1. Figure 2. BASE-EMITTER SATURATION VOLTAGE vs COLLECTOR CURRENT TCS130AI VBE(sat) - Base-Emitter Saturation Voltage - V 3*0 2*5 TC = -40C TC = 25C TC = 100C 2*0 1*5 1*0 IB = IC / 100 tp = 300 s, duty cycle < 2% 0*5 0*5 1*0 10 20 IC - Collector Current - A Figure 3. PRODUCT INFORMATION 3 BDW93, BDW93A, BDW93B, BDW93C NPN SILICON POWER DARLINGTONS SEPTEMBER 1993 - REVISED MARCH 1997 THERMAL INFORMATION MAXIMUM POWER DISSIPATION vs CASE TEMPERATURE TIS130AA Ptot - Maximum Power Dissipation - W 100 80 60 40 20 0 0 25 50 75 100 TC - Case Temperature - C Figure 4. PRODUCT 4 INFORMATION 125 150 BDW93, BDW93A, BDW93B, BDW93C NPN SILICON POWER DARLINGTONS SEPTEMBER 1993 - REVISED MARCH 1997 MECHANICAL DATA TO-220 3-pin plastic flange-mount package This single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic compound. The compound will withstand soldering temperature with no deformation, and circuit performance characteristics will remain stable when operated in high humidity conditions. Leads require no additional cleaning or processing when used in soldered assembly. TO220 4,70 4,20 o 10,4 10,0 3,96 3,71 1,32 1,23 2,95 2,54 see Note B 6,6 6,0 15,90 14,55 see Note C 6,1 3,5 1,70 1,07 0,97 0,61 1 2 14,1 12,7 3 2,74 2,34 5,28 4,88 VERSION 1 0,64 0,41 2,90 2,40 VERSION 2 ALL LINEAR DIMENSIONS IN MILLIMETERS NOTES: A. The centre pin is in electrical contact with the mounting tab. B. Mounting tab corner profile according to package version. C. Typical fixing hole centre stand off height according to package version. Version 1, 18.0 mm. Version 2, 17.6 mm. PRODUCT MDXXBE INFORMATION 5 BDW93, BDW93A, BDW93B, BDW93C NPN SILICON POWER DARLINGTONS SEPTEMBER 1993 - REVISED MARCH 1997 IMPORTANT NOTICE Power Innovations Limited (PI) reserves the right to make changes to its products or to discontinue any semiconductor product or service without notice, and advises its customers to verify, before placing orders, that the information being relied on is current. PI warrants performance of its semiconductor products to the specifications applicable at the time of sale in accordance with PI's standard warranty. Testing and other quality control techniques are utilized to the extent PI deems necessary to support this warranty. Specific testing of all parameters of each device is not necessarily performed, except as mandated by government requirements. PI accepts no liability for applications assistance, customer product design, software performance, or infringement of patents or services described herein. Nor is any license, either express or implied, granted under any patent right, copyright, design right, or other intellectual property right of PI covering or relating to any combination, machine, or process in which such semiconductor products or services might be or are used. PI SEMICONDUCTOR PRODUCTS ARE NOT DESIGNED, INTENDED, AUTHORIZED, OR WARRANTED TO BE SUITABLE FOR USE IN LIFE-SUPPORT APPLICATIONS, DEVICES OR SYSTEMS. Copyright (c) 1997, Power Innovations Limited PRODUCT 6 INFORMATION