2SA1386/1386A Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC3519/A) -180 V(BR)CEO -180min -160min IC=-25mA IB -4 A hFE VCE=-4V, IC=-5A 50min PC 130(Tc=25C) W VCE(sat) IC=-5A, IB=-0.5A -2.0max Tj Tstg 150 C fT VCE=-12V, IE=2A 40typ MHz C COB VCB=-10V, f=1MHz 500typ pF IC (A) VBB1 (V) VBB2 (V) IB1 (A) IB2 (A) ton (s) tstg (s) tf (s) -40 4 -10 -10 5 -1 1 0.3typ 0.7typ 0.2typ m A -3 00 m A -200mA -10 -150mA -100mA -5 -50mA I B =-20mA 0 0 -1 -2 -3 -3 -15 -2 -1 0 0 -0.2 -0.4 -0.6 -0.8 -1 -5 -10 -15 Transient Thermal Resistance DC Curr ent Gain h FE 0 -1 125C 100 25C -30C 50 20 -0.02 -0.1 j-a - t Characteristics -0.5 -1 -5 -10 -15 3 1 0.5 0.1 1 10 Collector Current I C (A) Collector Current I C (A) f T - I E Characteristics (Typical) -2 Base-Emittor Voltage V B E (V) (V C E =-4V) DC Curr ent Gain h FE -0.5 0 -1.0 h FE - I C Temperature Characteristics (Typical) Typ -0.1 -5 Base Current I B (A) 200 10 -0.02 -10 I C =-10A (V C E =-4V) 100 (V C E =-4V) -5A -4 h FE - I C Characteristics (Typical) 1.8 I C - V BE Temperature Characteristics (Typical) Collector-Emitter Voltage V C E (V) 300 1.4 E Weight : Approx 6.0g a. Part No. b. Lot No. C ( - 0 40 C 125 A 5.450.1 B Collector Current I C (A) Collector Current I C (A) -7 00 -5 m 00 5.450.1 0.65 +0.2 -0.1 V CE ( sa t ) - I B Characteristics (Typical) Collector-Emitter Saturation Voltage V C E (s at) (V ) m A -15 2 3 1.05 +0.2 -0.1 hFE Rank O(50 to 100), P(70 to 140), Y(90 to 180) RL () I C - V CE Characteristics (Typical) 2.0 V VCC (V) o3.20.1 b -55 to +150 Typical Switching Characteristics (Common Emitter) a V mp) A e Te -15 (Cas IC V A -100max VEB=-5V p) IEBO mp) V 2.00.1 -30C -5 4.80.2 5.00.2 -160 VCB= VEBO 15.60.4 9.6 A em V -100max eT -180 ICBO -100max e Te -160 V Cas VCEO -180 (Cas -160 Conditions Symbol 25C VCBO Unit 4.0 2SA1386 2SA1386A j - a (C /W ) Symbol External Dimensions MT-100(TO3P) (Ta=25C) Ratings Unit 2SA1386A 2SA1386 19.90.3 Ratings 4.0max Absolute maximum ratings (Ta=25C) Electrical Characteristics Application : Audio and General Purpose 20.0min LAPT 100 1000 2000 Time t(ms) Safe Operating Area (Single Pulse) P c - T a Derating (V C E =-12V) 130 -40 10 DC 0.1 1 Emitter Current I E (A) 18 10 -0.05 -3 -10 -50 -100 Collector-Emitter Voltage V C E (V) 2 -200 nk 1 0 0.02 si -0.1 at 1.2SA1386 2.2SA1386A he Without Heatsink Natural Cooling ite -1 -0.5 100 fin 20 -5 In Collecto r Cur ren t I C ( A) p ith Ty W Cut-o ff Fr eque ncy f T (MH Z ) -10 40 ms Ma xim um Powe r Dissipation P C ( W) 60 50 3.5 0 Without Heatsink 0 25 50 75 100 125 Ambient Temperature Ta(C) 150