PAGE . 1March 09,2011-REV.02
BC817 SERIES
NPN GENERAL PURPOSE TRANSISTORS
VOLTAGE 45 V olts 330 mW
FEATURES
• General purpose amplifier applications
• NPN epitaxial silicon, planar design
• Collector current IC = 500mA
• Lead free in comply with EU RoHS 2002/95/EC directives.
• Green molding compound as per IEC61249 Std. . (Halogen Free)
MECHANICAL DAT A
• Case: SOT-23, Plastic
• Terminals: Solderable per MIL-STD-750, Method 2026
• Approx. Weight: 0.0003 ounces, 0.0084 grams
• Device Marking : BC817-16 : 8A
BC817-25 : 8B
BC817-40 : 8C
POWER
THERMAL CHARACTERISTICS
MAXIMUM RA TINGS
NOTE : Transistor mounted on FR-5 board minimum pad mounting conditions.
PARAMETER SYMBOL Value UNIT
Collector-Emitter Voltage V
CEO
45 V
Collector-Base Voltage V
CBO
50 V
Emitter-Base Voltage V
EBO
5.0 V
Collector Current - Continuous I
C
500 mA
Total Power Dissipation ( NOTE ) P
TOT
330 mW
Junction and Storage Temperature Range T
J
, T
STG
-55 to +150
o
C
PARAMETER SYMBOL Value UNIT
Thermal Resistance Junction to Ambient ( NOTE ) R
JA
375
o
C / W
Thermal Resistance Junction to Lead R
JL
220
o
C / W
SOT-23
Unit inch(mm)：
0.120(3.04)
0.110(2.80)
0.056(1.40)
0.047(1.20)
0.079(2.00)
0.070(1.80)
0.004(0.10)MAX.
0.020(0.50)
0.013(0.35)
0.044(1.10)
0.035(0.90)
0.006(0.15)MIN.
0.103(2.60)
0.086(2.20)
0.008(0.20)
0.003(0.08)
PAGE . 2March 09,2011-REV.02
BC817 SERIES
ELECTRICAL CHARACTERISTICS ( TJ=25oC,unless otherwise notes )
PARAMETER SYMBOL MIN. TYP. MAX. UNIT
Collector-Emitter Breakdown Voltage ( Ic=10mA, IB=0 ) V
(BR)
CEO 45 - - V
Collector-Base Breakdown Voltage ( V
EB
=0V, Ic=10A ) V
(BR)
CBO 50 - - V
Emitter-Base Breakdown Voltage ( I
E
=1A, Ic=0 ) V
(BR)
EBO 5.0 - - V
Emitter-Base Cutoff Current ( V
EB
=5V ) I
EBO
- - 100 nA
Collector-Base Cutoff Current ( V
CB
=20V, I
E
=0 ) T
J
=25
o
C
T
J
=150
o
CI
CBO
-
-
-
-
100
5.0
nA
A
DC Current Gain ( Ic=100mA, V
CE
=1V )
DC Current Gain ( Ic=500mA, V
CE
=1V )
BC817-16
BC817-25
BC817-40 h
FE
100
160
250
40
-
-
-
-
250
400
600
-
-
Collector-Emitter Saturation Voltage ( Ic=500mA, I
B
=50mA ) V
CE(SAT)
--0.7V
Base-Emitte Voltage ( Ic=500mA, V
CE
=1.0V ) V
BE(ON)
--1.2V
Collector-Base Capacitance (V
CB
=10V, I
E
=0, f=1MHz) C
CBO
-7.0- pF
Current Gain-Bandwidth Product ( Ic=10mA, V
CE
=5V, f=100MHz ) f
T
100 - - MHz
Collector Current I,C()mA
hFE
V , V (V)
CB EB
C,C (F)
CB CB P
Collector Current I,C()mA
hFE
Collector Current I,C()mA
hFE
0
50
100
150
200
250
300
0.01 0.1 1 10 100 1000
VCE = 1V
10
100
CIB (EB)
COB(EB)
0
50
100
150
200
250
300
350
400
450
0.01 0.1 1 10 100 1000
VCE = 1V
0
100
200
300
400
500
600
700
0.01 0.1 1 10 100 1000
VCE = 1V
1
0.1 1 10 100
Fig.1 BC817-16 Typical h vs. I
FE C
Fig.1 BC817-16 Typical h vs. I
FE C Fig.2 BC817-25 Typical h vs. I
FE C
Fig.2 BC817-25 Typical h vs. I
FE C
Fig.4 Typical Capacitances
Fig.3 BC817-40 Typical h vs. I
FE C
Fig.3 BC817-40 Typical h vs. I
FE C
PAGE . 3
March 09,2011-REV.02
MOUNTING P AD LA YOUT
• Packing information
T/R - 12K per 13" plastic Reel
T/R - 3K per 7” plastic Reel
ORDER INFORMA TION
LEGAL ST ATEMENT
Copyright PanJit International, Inc 2012
The information presented in this document is believed to be accurate and reliable. The specifications and information herein
are subject to change without notice. Pan Jit makes no warranty, representation or guarantee regarding the suitability of its
products for any particular purpose. Pan Jit products are not authorized for use in life support devices or systems. Pan Jit
does not convey any license under its patent rights or rights of others.
BC817 SERIES
SOT-23
0.031 MIN.
(0.80) MIN.
0.037
(0.95)
0.043
(1.10)
0.078
(2.00)
0.035 MIN.
(0.90) MIN.
0.043
(1.10)
0.106
(2.70)
Unit inch(mm)：
