BC817 SERIES NPN GENERAL PURPOSE TRANSISTORS POWER SOT-23 330 mW Unitinch(mm) * General purpose amplifier applications 0.006(0.15)MIN. FEATURES 0.120(3.04) 0.110(2.80) * NPN epitaxial silicon, planar design 0.103(2.60) * Collector current IC = 500mA * Lead free in comply with EU RoHS 2002/95/EC directives. * Green molding compound as per IEC61249 Std. . (Halogen Free) 0.056(1.40) 0.047(1.20) MECHANICAL DATA 0.008(0.20) 0.079(2.00) 0.003(0.08) 0.070(1.80) * Case: SOT-23, Plastic 0.086(2.20) 45 Volts VOLTAGE * Terminals: Solderable per MIL-STD-750, Method 2026 * Approx. Weight: 0.0003 ounces, 0.0084 grams 0.044(1.10) 0.004(0.10)MAX. 0.035(0.90) * Device Marking : BC817-16 : 8A BC817-25 : 8B 0.020(0.50) 0.013(0.35) BC817-40 : 8C MAXIMUM RATINGS PARAMETER SYMBOL Value UNIT Collector-Emitter Voltage V CEO 45 V Collector-Base Voltage V CBO 50 V Emitter-Base Voltage VEBO 5.0 V IC 500 mA PTOT 330 mW TJ , TSTG -55 to +150 oC SYMBOL Value UNIT Thermal Resistance Junction to Ambient ( NOTE ) R JA 375 oC /W Thermal Resistance Junction to Lead R JL 220 oC /W Collector Current - Continuous Total Power Dissipation ( NOTE ) Junction and Storage Temperature Range THERMAL CHARACTERISTICS PARAMETER NOTE : Transistor mounted on FR-5 board minimum pad mounting conditions. March 09,2011-REV.02 PAGE . 1 BC817 SERIES ELECTRICAL CHARACTERISTICS ( TJ=25oC,unless otherwise notes ) PARAMETER SYMBOL MIN. TYP. MAX. UNIT Collector-Emitter Breakdown Voltage ( Ic=10mA, IB=0 ) V (BR)CEO 45 - - V Collector-Base Breakdown Voltage ( V EB=0V, Ic=10A ) V (BR)CBO 50 - - V Emitter-Base Breakdown Voltage ( IE=1A, Ic=0 ) V(BR)EBO 5.0 - - V IEBO - - 100 nA ICBO - - 100 5.0 A hFE 100 160 250 40 - 250 400 600 - - Collector-Emitter Saturation Voltage ( Ic=500mA, IB=50mA ) V CE(SAT) - - 0.7 V Base-Emitte Voltage ( Ic=500mA, V CE=1.0V ) V BE(ON) - - 1.2 V C CBO - 7.0 - pF fT 100 - - MHz Emitter-Base Cutoff Current ( V EB =5V ) Collector-Base Cutoff Current ( V CB=20V, IE=0 ) DC Current Gain ( Ic=100mA, V CE=1V ) TJ =25oC TJ =150oC BC817-16 BC817-25 BC817-40 DC Current Gain ( Ic=500mA, V CE=1V ) Collector-Base Capacitance (VCB=10V, IE=0, f=1MHz) Current Gain-Bandwidth Product ( Ic=10mA, VCE=5V, f=100MHz ) nA 450 300 400 250 350 300 hFE hFE 200 150 250 200 150 100 100 50 50 V CE = 1V 0 0.01 0.1 1 10 100 VCE = 1V 0 1000 0.01 0.1 1 10 100 1000 Colle ctor Cur r e nt , IC ( m A ) Colle ctor Cur r e nt , I C ( m A ) Fig.1 BC817-16 Typical h FE vs. I C Fig.2 BC817-25 Typical h FE vs. I C 100 700 CIB (EB) 600 CCB, CCB (PF) hFE 500 400 300 10 COB (EB) 200 100 VCE = 1V 1 0 0.01 0.1 1 10 100 Colle ctor Curre nt , I C ( m A ) Fig.3 BC817-40 Typical h FE vs. I C March 09,2011-REV.02 1000 0.1 1 10 100 VCB, VEB (V) Fig.4 Typical Capacitances PAGE . 2 BC817 SERIES MOUNTING PAD LAYOUT SOT-23 0.035 MIN. (0.90) MIN. Unitinch(mm) 0.078 (2.00) 0.037 (0.95) 0.043 (1.10) 0.031 MIN. (0.80) MIN. 0.043 (1.10) 0.106 (2.70) ORDER INFORMATION * Packing information T/R - 12K per 13" plastic Reel T/R - 3K per 7" plastic Reel LEGAL STATEMENT Copyright PanJit International, Inc 2012 The information presented in this document is believed to be accurate and reliable. The specifications and information herein are subject to change without notice. Pan Jit makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. Pan Jit products are not authorized for use in life support devices or systems. Pan Jit does not convey any license under its patent rights or rights of others. March 09,2011-REV.02 PAGE . 3