BLM6G22-30; BLM6G22-30G W-CDMA 2100 MHz to 2200 MHz power MMIC Rev. 4 -- 7 March 2011 Product data sheet 1. Product profile 1.1 General description 30 W LDMOS 2-stage power MMIC for base station applications at frequencies from 2100 MHz to 2200 MHz. Available in gull wing for surface mount (SOT822-1) or flat lead (SOT834-1). Table 1. Typical performance Typical RF performance at Th = 25 C. Mode of operation f (MHz) (V) (W) 2-carrier W-CDMA 2110 to 2170 28 2 [1] VDS PL(AV) D IMD3 ACPR (dB) (%) (dBc) (dBc) 29.5 9 -48[1] -50[1] Gp Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7 dB at 0.01 % probability on CCDF per carrier; carrier spacing 10 MHz. CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling. 1.2 Features and benefits Typical 2-carrier W-CDMA performance at a frequency of 2110 MHz: Average output power = 2 W Power gain = 30 dB (typ) Efficiency = 9 % IMD3 = -48 dBc ACPR = -50 dBc Integrated temperature compensated bias Excellent thermal stability Biasing of individual stages is externally accessible Integrated ESD protection Small component size, very suitable for PA size reduction On-chip matching (input matched to 50 Ohm, output partially matched) High power gain Designed for broadband operation (2100 MHz to 2200 MHz) Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) BLM6G22-30; BLM6G22-30G NXP Semiconductors W-CDMA 2100 MHz to 2200 MHz power MMIC 2. Pinning information 2.1 Pinning BLM6G22-30 BLM6G22-30G GND 1 VDS1 2 n.c. 3 n.c. 4 n.c. 5 RF_INPUT 6 n.c. 7 n.c. 8 VGS1 9 16 GND 15 n.c. 14 RF_OUTPUT/VDS2 13 n.c. VGS2 10 GND 11 12 GND 001aae321 Transparent top view. Fig 1. Pin configuration 2.2 Pin description Table 2. Pin description Symbol Pin Description GND 1, 11, 12, 16 ground VDS1 2 first stage drain-source voltage n.c. 3, 4, 5, 7, 8, 13, 15 not connected RF_INPUT 6 RF input VGS1 9 first stage gate-source voltage VGS2 10 second stage gate-source voltage RF_OUT/VDS2 14 RF output or second stage drain-source voltage RF_GND flange RF ground 3. Ordering information Table 3. Ordering information Type number Package BLM6G22-30 HSOP16F plastic, heatsink small outline package; 16 leads (flat) SOT834-1 BLM6G22-30G HSOP16 SOT822-1 Name BLM6G22-30_BLM6G22-30G Product data sheet Description Version plastic, heatsink small outline package; 16 leads All information provided in this document is subject to legal disclaimers. Rev. 4 -- 7 March 2011 (c) NXP B.V. 2011. All rights reserved. 2 of 14 BLM6G22-30; BLM6G22-30G NXP Semiconductors W-CDMA 2100 MHz to 2200 MHz power MMIC 4. Block diagram VDS1 RF_INPUT VGS1 VGS2 2 6 14 RF_OUTPUT/VDS2 9 10 TEMPERATURE COMPENSATED BIAS 001aah621 Fig 2. Block diagram of BLM6G22-30 and BLM6G22-30G 5. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter VDS Conditions Min Max Unit drain-source voltage - 65 V VGS gate-source voltage 0.5 +13 V ID1 first stage drain current - 3 A ID2 second stage drain current - 9 A Tstg storage temperature -65 +150 C Tj junction temperature - 200 C 6. Thermal characteristics Table 5. Symbol Parameter Conditions Value Unit Rth(j-c)1 first stage thermal resistance from junction to case Tcase = 25 C; PL = 2 W; 2-carrier W-CDMA [1] 3.9 K/W Rth(j-c)2 second stage thermal resistance Tcase = 25 C; PL = 2 W; from junction to case 2-carrier W-CDMA [1] 2.1 K/W [1] BLM6G22-30_BLM6G22-30G Product data sheet Thermal characteristics Thermal resistance is determined under specific RF operating conditions. All information provided in this document is subject to legal disclaimers. Rev. 4 -- 7 March 2011 (c) NXP B.V. 2011. All rights reserved. 3 of 14 BLM6G22-30; BLM6G22-30G NXP Semiconductors W-CDMA 2100 MHz to 2200 MHz power MMIC 7. Characteristics Table 6. Characteristics Mode of operation: 2-carrier W-CDMA; PAR 7 dB at 0.01 % probability on CCDF; 3GPP test model 1; 1-64 PDPCH; f1 = 2112.5 MHz; f2 = 2122.5 MHz; f3 = 2157.5 MHz; f4 = 2167.5 MHz; VDS = 28 V; IDq1 = 270 mA; IDq2 = 280 mA; Th = 25 C unless otherwise specified; in a production test circuit as described in Section 9 "Test information". Symbol Parameter Conditions Min Typ Gp power gain PL(AV) = 2 W 27.5 30 RLin input return loss PL(AV) = 2 W - -14 Max Unit 32.5 dB -10 dB D drain efficiency PL(AV) = 2 W 7.5 9 - % IMD3 third-order intermodulation distortion PL(AV) = 2 W - -48 -44.5 dBc ACPR adjacent channel power ratio PL(AV) = 2 W - -50 -47 dBc 8. Application information 8.1 Ruggedness The BLM6G22-30 and BLM6G22-30G are capable of withstanding a load mismatch corresponding to VSWR = 5 : 1 through all phases under the following conditions: VDS = 28 V; IDq1 = 270 mA; IDq2 = 280 mA; PL = 2 W; 2-carrier W-CDMA. 8.2 Impedance information Table 7. BLM6G22-30_BLM6G22-30G Product data sheet Typical impedance f Zi[1] ZL[2] MHz 2075 40.9 + j22.8 18.0 - j5.5 2085 41.2 + j23.2 17.8 - j5.6 2095 41.6 + j23.3 17.7 - j5.7 2105 41.9 + j23.3 17.7 - j5.9 2115 42.1 + j23.3 17.6 - j6.0 2125 42.2 + j23.2 17.4 - j6.0 2135 42.4 + j23.1 17.3 - j6.1 2145 42.3 + j22.9 17.2 - j6.1 2155 42.5 + j22.8 17.0 - j6.2 2165 42.6 + j22.8 16.8 - j6.3 2175 42.7 + j22.8 16.6 - j6.4 2185 43.0 + j23.0 16.4 - j6.6 2195 43.6 + j23.1 16.3 - j6.9 2205 44.2 + j23.3 16.1 - j7.2 [1] Device input impedance as measured from gate to ground. [2] Test circuit impedance as measured from drain to ground. All information provided in this document is subject to legal disclaimers. Rev. 4 -- 7 March 2011 (c) NXP B.V. 2011. All rights reserved. 4 of 14 BLM6G22-30; BLM6G22-30G NXP Semiconductors W-CDMA 2100 MHz to 2200 MHz power MMIC 8.3 Performance curves Performance curves are measured in a BLM6G22-30G application circuit. 001aah622 35 15 D (%) Gp (dB) 13 33 IMD3, ACPR (dBc) IMD3 -47 Gp 31 001aah623 -45 11 D 9 29 -49 ACPR 7 27 25 2050 2100 2150 5 2250 2200 -51 2050 2100 2150 2200 f (MHz) Tcase = 25 C; VDS = 28 V; PL(AV) = 2 W; IDq1 = 270 mA; IDq2 = 280 mA; carrier spacing = 10 MHz. Fig 3. 2-carrier W-CDMA power gain and drain efficiency as functions of frequency; typical values 001aah624 38 Gp (dB) 36 34 (2) 32 Gp 30 D Fig 4. 2-carrier W-CDMA adjacent power channel ratio and third order intermodulation distortion as functions of frequency; typical values 001aah625 IMD3, -20 ACPR (dBc) -25 IMD3 ACPR 25 -30 20 -35 15 -40 10 -45 5 -50 0 -55 10-1 Gp (3) 28 35 D (%) 30 Tcase = 25 C; VDS = 28 V; PL(AV) = 2 W; IDq1 = 270 mA; IDq2 = 280 mA; carrier spacing = 10 MHz. Gp (1) 2250 f (MHz) (3) (1) (2) 26 (1), (2), (3) (2) (1) (3) 24 10-1 1 102 10 102 10 PL(AV) (W) VDS = 28 V; IDq1 = 270 mA; IDq2 = 280 mA; carrier spacing = 10 MHz. VDS = 28 V; IDq1 = 270 mA; IDq2 = 280 mA; carrier spacing = 10 MHz. (1) Tcase = -30 C (1) Tcase = -30 C (2) Tcase = 25 C (2) Tcase = 25 C (3) Tcase = 85 C (3) Tcase = 85 C Fig 5. 1 PL(AV) (W) 2-carrier W-CDMA power gain and drain efficiency as functions of average output power and temperature; typical values BLM6G22-30_BLM6G22-30G Product data sheet Fig 6. 2-carrier W-CDMA adjacent power channel ratio and third order intermodulation distortion as functions of average output power and temperature; typical values All information provided in this document is subject to legal disclaimers. Rev. 4 -- 7 March 2011 (c) NXP B.V. 2011. All rights reserved. 5 of 14 BLM6G22-30; BLM6G22-30G NXP Semiconductors W-CDMA 2100 MHz to 2200 MHz power MMIC 001aah626 32 Gp (dB) 30 001aah627 -20 IMD (dBc) -30 IMD3 -40 IMD5 -50 IMD7 28 (1) -60 (3) (2) -70 26 -80 -90 10-1 24 0 10 20 30 40 1 PL (W) 102 10 PL(PEP) (W) f = 2140 MHz; IDq1 = 270 mA; IDq2 = 280 mA. IDq1 = 270 mA; IDq2 = 280 mA; f1 = 2140 MHz; f2 = 2140.1 MHz. (1) VDS = 24 V (2) VDS = 28 V (3) VDS = 32 V Fig 7. One-tone CW power gain as function of output power and drain-source voltage; typical value Fig 8. Two-tone CW intermodulation distortion as function of peak envelope load power; typical value 001aah628 35 PL(M) (W) (1) 31 (2) (3) 27 23 19 15 2050 2100 2150 2200 2250 f (MHz) Test signal: IS-95 with pilot, paging, sync and 6 traffic channels (Walsh codes 8 to 13). PAR = 9.7 dB at 0.01 % probability on the CCDF. (1) Tcase = -30 C (2) Tcase = 25 C (3) Tcase = 85 C Fig 9. Single-carrier peak output power as function of frequency and temperature; typical values BLM6G22-30_BLM6G22-30G Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 4 -- 7 March 2011 (c) NXP B.V. 2011. All rights reserved. 6 of 14 BLM6G22-30; BLM6G22-30G NXP Semiconductors W-CDMA 2100 MHz to 2200 MHz power MMIC 9. Test information C11 C9 C15 C3 C4 C5 C1 C13 C14 C6 C7 R1 R2 C2 C8 C10 C12 001aah629 Striplines are on a double copper-clad Rogers 4350B Printed-Circuit Board (PCB) with r = 3.5; thickness = 0.76 mm. See Table 8 for a list of components. Fig 10. Component layout for 2110 MHz to 2170 MHz circuit for 2-carrier W-CDMA Table 8. List of components For test circuit see Figure 10. Component Product data sheet Value C1, C13 multilayer ceramic chip capacitor 0.3 pF C2, C4, C8, C11, C12 multilayer ceramic chip capacitor 4.7 F; 50 V C3, C15 electrolytic capacitor C5, C9, C10, C14 multilayer ceramic chip capacitor 10 pF Remarks [1] 220 F; 35 V C6, C7 multilayer ceramic chip capacitor 100 nF R1 SMD resistor 0805 1 k R2 SMD resistor 0805 3.9 k [1] BLM6G22-30_BLM6G22-30G Description [1] American Technical Ceramics (ATC) type 100A or capacitor of same quality. All information provided in this document is subject to legal disclaimers. Rev. 4 -- 7 March 2011 (c) NXP B.V. 2011. All rights reserved. 7 of 14 BLM6G22-30; BLM6G22-30G NXP Semiconductors W-CDMA 2100 MHz to 2200 MHz power MMIC 10. Package outline HSOP16F: plastic, heatsink small outline package; 16 leads (flat) SOT834-1 D A E E2 c y X HE v A D1 e3 (2x) D2 w bp2 16 12 A2 E1 pin 1 index Q1 detail X 1 11 w Z e (6x) bp1 (5x) e1 (2x) e2 (4x) w bp (10x) 0 5 scale Dimensions Unit(1) mm max nom min 10 mm A2 3.5 bp bp1 bp2 c D(1) D1 0.43 1.09 5.87 0.32 16.0 13.0 D2 E(1) E1 E2 1.1 11.1 6.2 2.9 e e1 e2 e3 HE Q1 16.2 1.7 1.02 1.37 5.69 3.81 3.2 0.28 0.94 5.72 0.23 15.8 12.6 0.9 10.9 5.8 2.5 References IEC JEDEC JEITA w y 15.8 Z 2.5 0.25 0.25 0.1 2.0 1.5 Note 1. Plastic or metal protrusions of 0.25 mm maximum per side are not included. Outline version v sot834-1_po European projection Issue date 03-10-22 10-10-20 SOT834-1 Fig 11. Package outline SOT834-1 (HSOP16F) BLM6G22-30_BLM6G22-30G Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 4 -- 7 March 2011 (c) NXP B.V. 2011. All rights reserved. 8 of 14 BLM6G22-30; BLM6G22-30G NXP Semiconductors W-CDMA 2100 MHz to 2200 MHz power MMIC HSOP16: plastic, heatsink small outline package; 16 leads SOT822-1 A E D E2 X c y HE v A D1 e3 (2x) D2 bp2 w 16 12 Q A2 E1 A pin 1 index (A3) A1 A4 1 Lp 11 detail X w Z e (6x) e1 (2x) bp1 (5x) e2 (4x) w bp (10x) Q v w y 1.5 0 5 mm max nom min 0.25 0.25 A A1 A2 0.2 3.5 0 3.2 3.6 A3 D2 E(1) E1 E2 0.06 0.43 1.09 5.87 0.32 16.0 13.0 1.1 11.1 6.2 2.9 -0.06 0.28 0.94 5.72 0.23 15.8 12.6 0.9 10.9 5.8 2.5 A4 bp bp1 bp2 c D(1) D1 0.35 e e1 References IEC 2.0 0 e3 HE Lp 14.5 1.1 13.9 0.8 1.02 1.37 5.69 3.81 Note 1. Plastic or metal protrusions of 0.25 mm maximum per side are not included Outline version e2 8 0.1 1.4 scale Dimensions Unit(1) 10 mm Z 2.5 JEDEC JEITA sot822-1_po European projection Issue date 07-02-08 10-10-20 SOT822-1 Fig 12. Package outline SOT822-1 (HSOP16) BLM6G22-30_BLM6G22-30G Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 4 -- 7 March 2011 (c) NXP B.V. 2011. All rights reserved. 9 of 14 BLM6G22-30; BLM6G22-30G NXP Semiconductors W-CDMA 2100 MHz to 2200 MHz power MMIC 11. Handling information 11.1 ESD protection Table 9. ESD protection characteristics Test condition Class Human Body Model (HBM) 1 Machine Model (MM) 1 11.2 Moisture sensitivity Table 10. Moisture sensitivity level Test methodology Class JESD-22-A113 3 12. Abbreviations Table 11. BLM6G22-30_BLM6G22-30G Product data sheet Abbreviations Acronym Description 3GPP Third Generation Partnership Project CCDF Complementary Cumulative Distribution Function CW Continuous Wave DPCH Dedicated Physical CHannel IS-95 Interim Standard 95 LDMOS Laterally Diffused Metal-Oxide Semiconductor MMIC Monolithic Microwave Integrated Circuit PA Power Amplifier PAR Peak-to-Average power Ratio PDPCH transmission Power of the Dedicated Physical CHannel RF Radio Frequency VSWR Voltage Standing-Wave Ratio W-CDMA Wideband Code Division Multiple Access All information provided in this document is subject to legal disclaimers. Rev. 4 -- 7 March 2011 (c) NXP B.V. 2011. All rights reserved. 10 of 14 BLM6G22-30; BLM6G22-30G NXP Semiconductors W-CDMA 2100 MHz to 2200 MHz power MMIC 13. Revision history Table 12. Revision history Document ID Release date Data sheet status BLM6G22-30_BLM6G22-30G v.4 20110307 Modifications: * * Product data sheet Change notice Supersedes - BLM6G22-30_BLM6G22-30G v.3 Data sheet status has been changed to "Product data sheet" Table 6 on page 4: the values of RLin have been depicted on a negative scale BLM6G22-30_BLM6G22-30G v.3 20081121 Preliminary data sheet - BLM6G22-30_BLM6G22-30G v.2 BLM6G22-30_BLM6G22-30G v.2 20080904 Preliminary data sheet - BLM6G22-30_BLM6G22-30G v.1 BLM6G22-30_BLM6G22-30G v.1 20080303 Objective data sheet - BLM6G22-30_BLM6G22-30G Product data sheet - All information provided in this document is subject to legal disclaimers. Rev. 4 -- 7 March 2011 (c) NXP B.V. 2011. All rights reserved. 11 of 14 BLM6G22-30; BLM6G22-30G NXP Semiconductors W-CDMA 2100 MHz to 2200 MHz power MMIC 14. Legal information 14.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term `short data sheet' is explained in section "Definitions". [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 14.2 Definitions Draft -- The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet -- A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. Product specification -- The information and data provided in a Product data sheet shall define the specification of the product as agreed between NXP Semiconductors and its customer, unless NXP Semiconductors and customer have explicitly agreed otherwise in writing. In no event however, shall an agreement be valid in which the NXP Semiconductors product is deemed to offer functions and qualities beyond those described in the Product data sheet. 14.3 Disclaimers Limited warranty and liability -- Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. Notwithstanding any damages that customer might incur for any reason whatsoever, NXP Semiconductors' aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the Terms and conditions of commercial sale of NXP Semiconductors. malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer's own risk. Applications -- Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Customers are responsible for the design and operation of their applications and products using NXP Semiconductors products, and NXP Semiconductors accepts no liability for any assistance with applications or customer product design. It is customer's sole responsibility to determine whether the NXP Semiconductors product is suitable and fit for the customer's applications and products planned, as well as for the planned application and use of customer's third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. NXP Semiconductors does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer's applications or products, or the application or use by customer's third party customer(s). Customer is responsible for doing all necessary testing for the customer's applications and products using NXP Semiconductors products in order to avoid a default of the applications and the products or of the application or use by customer's third party customer(s). NXP does not accept any liability in this respect. Limiting values -- Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. Terms and conditions of commercial sale -- NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. NXP Semiconductors hereby expressly objects to applying the customer's general terms and conditions with regard to the purchase of NXP Semiconductors products by customer. Right to make changes -- NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. No offer to sell or license -- Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Suitability for use -- NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or Export control -- This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. BLM6G22-30_BLM6G22-30G Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 4 -- 7 March 2011 (c) NXP B.V. 2011. All rights reserved. 12 of 14 NXP Semiconductors BLM6G22-30; BLM6G22-30G W-CDMA 2100 MHz to 2200 MHz power MMIC Non-automotive qualified products -- Unless this data sheet expressly states that this specific NXP Semiconductors product is automotive qualified, the product is not suitable for automotive use. It is neither qualified nor tested in accordance with automotive testing or application requirements. NXP Semiconductors accepts no liability for inclusion and/or use of non-automotive qualified products in automotive equipment or applications. NXP Semiconductors' specifications such use shall be solely at customer's own risk, and (c) customer fully indemnifies NXP Semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond NXP Semiconductors' standard warranty and NXP Semiconductors' product specifications. In the event that customer uses the product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without NXP Semiconductors' warranty of the product for such automotive applications, use and specifications, and (b) whenever customer uses the product for automotive applications beyond 14.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 15. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com BLM6G22-30_BLM6G22-30G Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 4 -- 7 March 2011 (c) NXP B.V. 2011. All rights reserved. 13 of 14 NXP Semiconductors BLM6G22-30; BLM6G22-30G W-CDMA 2100 MHz to 2200 MHz power MMIC 16. Contents 1 1.1 1.2 2 2.1 2.2 3 4 5 6 7 8 8.1 8.2 8.3 9 10 11 11.1 11.2 12 13 14 14.1 14.2 14.3 14.4 15 16 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description . . . . . . . . . . . . . . . . . . . . . 1 Features and benefits . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Pinning . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Pin description . . . . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics . . . . . . . . . . . . . . . . . . 3 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Application information. . . . . . . . . . . . . . . . . . . 4 Ruggedness . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Impedance information . . . . . . . . . . . . . . . . . . . 4 Performance curves . . . . . . . . . . . . . . . . . . . . . 5 Test information . . . . . . . . . . . . . . . . . . . . . . . . . 7 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 8 Handling information. . . . . . . . . . . . . . . . . . . . 10 ESD protection . . . . . . . . . . . . . . . . . . . . . . . . 10 Moisture sensitivity . . . . . . . . . . . . . . . . . . . . . 10 Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 11 Legal information. . . . . . . . . . . . . . . . . . . . . . . 12 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 12 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Contact information. . . . . . . . . . . . . . . . . . . . . 13 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section `Legal information'. (c) NXP B.V. 2011. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 7 March 2011 Document identifier: BLM6G22-30_BLM6G22-30G