PESD5V0S1BLD - NXP - Datasheet.Support

1. Product profile

1.1 General description

Low capacitance bidirectional ElectroStatic Discharge (ESD) protection diode designed

to protect one sig nal line fr om the dam a ge cau se d by ESD and ot he r tr an sie nts.

The device is housed in a SOD882D leadless ultra small Surface-Mounted Device (SMD)

plastic packa ge with visible and solderable side pads.

1.2 Features and benefits

1.3 Applications

1.4 Quick reference data

PESD5V0S1BLD

Low capacitance bidirectional ESD protection diode

Rev. 1 — 12 October 2010 Product data sheet

Bidirectional ESD protection of one line ESD protection up to 30 kV

Ultra small SMD plastic package IEC 61000-4-2; level 4 (ESD)

Solderable side pads IEC 61000-4-5 (sur ge); IPP =12A

Package height typ. 0.37 mm Max. peak pulse power: PPP =130W

Low clamping voltage: VCL =14V Ultra low leakage current: IRM =5nA

AEC-Q101 qualified

Computers and peripherals Communication systems

Audio and video equipment Portable electronics

Cellular handsets and accessories

Table 1. Quick reference data

Tamb =25

C unless otherwise specified.

Symbol Parameter Conditions Min Typ Max Unit

Per diode

VRWM reverse standoff voltage - - 5.0 V

Cddiode capacitance f = 1 MHz; VR= 0 V - 35 45 pF

Product data sheet Rev. 1 — 12 October 2010 2 of 13

NXP Semiconductors PESD5V0S1BLD

Low capacitance bidirectional ESD protection diode

2. Pinning information

[1] The marking bar indicates cathode 1.

3. Ordering information

4. Marking

[1] For SOD882D binary marking code description, see Figure 1.

4.1 Binary marking code description

Table 2. Pinning

Pin Description Simplified outline Graphic symbol

1 cathode 1 [1]

2 cathode 2

Transparent

top view

21 006aab0

Table 3. Ordering i nformation

Type number Package

Name Description Version

PESD5V0S1BLD - leadless ultra small plastic package; 2 terminals;

body 1.0 ×0.6 ×0.4 mm SOD882D

Table 4. Marking codes

Type number Marking code [1]

PESD5V0S1BLD 1100

0000

Fig 1. SOD882D binary marking code description

VENDOR CODE

MARKING CODE

(EXAMPLE)

CATHODE BAR READING DIRECTION

READING DIRECTION

READING EXAMPLE:

0111

1011

006aac47

Product data sheet Rev. 1 — 12 October 2010 3 of 13

NXP Semiconductors PESD5V0S1BLD

Low capacitance bidirectional ESD protection diode

5. Limiting values

[1] Non-repetitive current pulse 8/20 μs exponential decay waveform according to IEC 61000-4-5.

[1] Device stressed with ten non-repetitive ESD pulses.

[2] Measured from pin 1 to pin 2.

Table 5. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

Per diode

PPP peak pulse power tp=8/20μs[1] -130W

IPP peak pulse current tp=8/20μs[1] -12A

Tjjunction temperature - 150 °C

Tamb ambient temperature −55 +150 °C

Tstg storage temperature −65 +150 °C

Table 6. ESD maximum ratings

Tamb =25

C unless otherwise specified.

Symbol Parameter Conditions Min Max Unit

VESD electrostatic discharge voltage IEC 61000-4-2

(contact discharge) [1][2] -30kV

MIL-STD-883 (human

body model) -10kV

Table 7. ESD standards complianc e

Standard Conditions

IEC 61000-4-2; level 4 (ESD) > 15 kV (air); > 8 kV (contact)

MIL-STD-883; class 3 (human body model) > 4 kV

Product data sheet Rev. 1 — 12 October 2010 4 of 13

NXP Semiconductors PESD5V0S1BLD

Low capacitance bidirectional ESD protection diode

6. Characteristics

[1] Non-repetitive current pulse 8/20 μs exponential decay waveform according to IEC 61000-4-5.

[2] Measured from pin 1 to pin 2.

[3] Non-repetitive current pulse; Transmission Line Pulse (TLP) tp= 100 ns; square pulse;

ANSI/ESD STM5.1-2008.

Fig 2. 8 /2 0 μs pulse wa ve fo r m ac c or ding to

IEC 61000-4-5 Fig 3. ESD pulse waveform according to

IEC 61000-4-2

t (μs)

0403010 20

001aaa630

120

IPP

(%)

e−t

100 % IPP; 8 μs

50 % IPP; 20 μs

001aaa63

100 %

90 %

30 ns

60 ns

10 %

= 0.7 ns to 1 ns

Table 8. Characteristics

Tamb =25

C unless otherwise specified.

Symbol Parameter Conditions Min Typ Max Unit

Per diode

VRWM reverse standoff voltage - - 5.0 V

IRM reverse leakage current VRWM = 5.0 V - 5 100 nA

VBR breakdown voltage IR=1mA 5.5- 9.5V

Cddiode capacitance f = 1 MHz;

VR=0V -3545pF

VCL clamping voltage [1][2]

IPP =1A - - 10 V

IPP =12A - - 14 V

rdyn dynamic resistance [2][3]

IR=10A - 0.1 - Ω

IR=−10 A - 0.15 - Ω

Product data sheet Rev. 1 — 12 October 2010 5 of 13

NXP Semiconductors PESD5V0S1BLD

Low capacitance bidirectional ESD protection diode

Tamb =25°C

Fig 4. Peak pulse power as a function of exponential

pulse duration; typical values Fig 5. Rel ati v e va ria t io n of pe ak pulse power as a

function of junction temperature; typical

values

f=1MHz; T

amb =25°C

Fig 6. Diode capacitance as a function of reverse

voltage; typical values Fig 7. Relative variation of reverse leakage current

as a function of junction temperature; typical

values

001aaa202

(μs)

110

10 10

(W)

(°C)

0 20015050 100

001aaa633

0.4

0.8

1.2

PP(25°C)

001aaa203

VR (V)

054231

(pF)

001aaa204

(°C)

75 150125100

−1

RM(Tj)

RM(Tj=85°C)

Product data sheet Rev. 1 — 12 October 2010 6 of 13

NXP Semiconductors PESD5V0S1BLD

Low capacitance bidirectional ESD protection diode

Fig 8. V-I characteristics for a bidirectional ESD protection diode

006aaa67

−VCL −VBR −VRWM

VCL

VBR

VRWM

−IRM

IRM

−IR

−IPP

IPP

−+

Product data sheet Rev. 1 — 12 October 2010 7 of 13

NXP Semiconductors PESD5V0S1BLD

Low capacitance bidirectional ESD protection diode

Fig 9. ESD clamping test setup and waveforms

50 Ω

DUT

(DEVICE

UNDER

TEST)

GND

450 Ω

RG 223/U

50 Ω coax

ESD TESTER

IEC 61000-4-2 network

CZ = 150 pF; RZ = 330 Ω

4 GHz DIGITAL

OSCILLOSCOPE

10×

ATTENUATOR

unclamped +8 kV ESD pulse waveform

(IEC 61000-4-2 network)

unclamped −8 kV ESD pulse waveform

(IEC 61000-4-2 network)

vertical scale = 2 kV/div

horizontal scale = 15 ns/div

vertical scale = 2 kV/div

horizontal scale = 15 ns/div

GND

clamped +8 kV ESD pulse waveform

(IEC 61000-4-2 network) pin 1 to 2

vertical scale = 10 V/div

horizontal scale = 10 ns/div

006aac49

GND

clamped −8 kV ESD pulse waveform

(IEC 61000-4-2 network) pin 1 to 2

vertical scale = 10 V/div

horizontal scale = 10 ns/div

Product data sheet Rev. 1 — 12 October 2010 8 of 13

NXP Semiconductors PESD5V0S1BLD

Low capacitance bidirectional ESD protection diode

7. Application information

The PESD5V0S1BLD is design ed for the protection of one bidirectional dat a or signal line

from the damage caused by ESD and surge pulses. The device may be used on lines

where the signal polarities are both, positive and negative with respect to ground. The

PESD5V0S1BLD provides a surge capability of 130 W per line for an 8/20 μs waveform.

Circuit board layout and protection device placement

Circuit board layout is critical for the suppression of ESD, Electrical Fast Transient (EFT)

and surge transients. The following guidelines are recommended:

1. Place the device as clos e to the input terminal or connector as possible.

2. The path length between the device and the protected line should be minimized.

3. Keep parallel signal paths to a minimum.

4. Avoid running protected conductors in parallel with unprotected conductors.

5. Minimize all Printed-Circuit Board (PCB) conductive loops including power and

ground loops.

6. Minimize the length of the transient return path to ground.

7. Avoid using shared transient return paths to a common ground point.

8. Ground planes should b e used whenever possible. For multilayer PCBs, use ground

vias.

8. Test information

8.1 Quality information

This product has been qualified in accordance with the Automotive Electronics Council

(AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is

suitable for use in auto motive applications.

Fig 10. Applicati on di agram

006aaa05

PESD5V0S1Bx

GND

signal line

Product data sheet Rev. 1 — 12 October 2010 9 of 13

NXP Semiconductors PESD5V0S1BLD

Low capacitance bidirectional ESD protection diode

9. Package outline

10. Packing information

[1] For further information and the availability of packing methods, see Section 14.

11. Soldering

Fig 11. Package outline PESD5V0S1BLD (SOD882D)

10-08-06Dimensions in mm

0.65

0.30

0.22

0.30

0.22

0.55

0.45

0.65

0.55

0.4

max

1.05

0.95

cathode marking on top side

Table 9. Packing methods

The indicated -xxx are the last thre e digits of the 12NC ordering code.[1]

Type number Package Description Packing quantity

10000

PESD5V0S1BLD SOD882D 2 mm pitch, 8 mm tape and reel -315

Reflow soldering is the only recommended soldering method.

Fig 12. Reflow soldering footprint PESD5V0S1BLD ( SOD882D)

solder lands

solder resist

solder paste

sod882d_

Dimensions in mm

1.4

0.2

0.3

0.4

1.3

0.8

(2×)

0.6

(2×)

0.7

(2×)

Product data sheet Rev. 1 — 12 October 2010 10 of 13

NXP Semiconductors PESD5V0S1BLD

Low capacitance bidirectional ESD protection diode

12. Revision history

Table 10. Revision history

Document ID Release date Data sheet status Change notice Supersedes

PESD5V0S1BLD v.1 20101012 Prod uct data sheet - -

Product data sheet Rev. 1 — 12 October 2010 11 of 13

NXP Semiconductors PESD5V0S1BLD

Low capacitance bidirectional ESD protection diode

13. Legal information

13.1 Data sheet status

[1] Please consult the most recently issued document before initiating or completing a design.

[2] The term ‘short data sheet’ is explained in section “Definitions”.

[3] The product st atus of de vice(s) d escribed in th is docume nt may have cha nged since thi s docume nt was publish ed and may di ffe r in case of multiple devices. The latest product status

information is available on the Internet at URL http://www.nxp.com.

13.2 Definitions

Draft — The document is a draft version only. The content is still under

internal review and subject to formal approval, which may result in

modifications or additions. NXP Semiconductors does not give any

representations or warranties as to the accuracy or completeness of

information included herein and shall have no liab ility for the consequences of

use of such information.

Short data sheet — A short data sheet is an extract from a full data sheet

with the same product type number(s) and tit le. A short data sh eet is intended

for quick reference only and shou ld not b e relied u pon to cont ain det ailed and

full information. For detailed and full information see the relevant full data

sheet, which is available on request via the local NXP Semicond uctors sales

office. In case of any inconsistency or conflict with the shor t data sheet, the

full data sheet shall pre va il.

Product specificat ion — The information and data provided in a Product

data sheet shall define the specification of the product as agreed be tween

NXP Semiconductors and its customer, unless NXP Semiconductors and

customer have explicitly agreed otherwise in writing. In no event however,

shall an agreement be valid in which the NXP Semiconductors product is

deemed to off er functions and qualities beyond those described in the

Product data sheet.

13.3 Disclaimers

Limited warr a nty and liability — Information in this document is believed to

be accurate and reliable. However, NXP Semiconductors does not give any

representations or warrant ies, expressed or implied, as to the accuracy or

completeness of such information and shall have no liability for the

consequences of use of such information.

In no event shall NXP Semiconductors be liable for any indirect, incidental,

punitive, special or consequ ential damages (including - wit hout limitation - lost

profits, lost savings, business interruption, costs related to the removal or

replacement of any products or rework charges) whethe r or not such

damages are based on tort (including negligence), warranty, breach of

contract or any other legal theory.

Notwithstanding any damages that customer might incur for any reason

whatsoever, NXP Semiconductors’ aggregate and cumulative liability t owards

customer for the products described herein shall be limited in accordance

with the Terms and conditions of commercial sale of NXP Semiconductors.

Right to make changes — NXP Semiconductors reserves the right to make

changes to information published in this document, including without

limitation specifications and product descriptions, at any time and without

notice. This document supersedes and replaces all informa tion supplied prior

to the publication hereof .

Suitability for use — NXP Semiconductors products are not designed,

authorized or warranted to be suit able for use in life support, life-critical or

safety-critical systems or equipment, nor in applications where failure or

malfunction of an NXP Semiconductors product can reaso nably be expected

to result in perso nal injury, death or severe property or environmental

damage. NXP Semiconductors accepts no liab ility for inclusion and/or use of

NXP Semiconductors products in such equipment or applications and

therefore such inclusion and/or use is at the customer’s own risk.

Applications — Applications that are described herein for any of these

products are for illustrative purposes only. NXP Semiconductors makes no

representation or warranty that such applications will be suitable for the

specified use without further testing or modification.

Customers are responsible for the design and ope ration of their applications

and products using NXP Semiconductors product s, and NXP Semiconductors

accepts no liability for any assistance with applications or customer product

design. It is customer’s sole responsibility to determine whether the NXP

Semiconductors product is suit able and fit for the custome r’s applications and

products planned, as well as fo r the planned application and use of

customer’s third party customer(s). Custo mers should provide appropriate

design and operating safeguards to minimize the risks associated with their

applications and products.

NXP Semiconductors does not accept any liability related to any default,

damage, costs or problem which is based on any weakness or default in the

customer’s applications or products, or the applicatio n or use by customer’s

third party custo m er(s). Customer is responsible for doing all necessary

testing for the customer’s applications and products using NXP

Semiconductors products in order to avoid a default of the applications and

the products or of the application or use by customer’s third party

customer(s). NXP does not accept any liability in this respect.

Limiting values — Stress above one or more limiting values (as defined in

the Absolute Maximum Ratings System of IEC 60134) will cause permanent

damage to the device. Limiting values are stress ratings only and (proper)

operation of the device at these or any other conditions above those given in

the Recommended operating conditions section (if present) or the

Characteristics sections of this document is not warranted. Constant or

repeated exposure to limiting values will permanently and irreversibly affect

the quality and reliability of the device.

Terms and conditions of commercial sale — NXP Semiconductors

products are sold subject to the general terms and conditions of commercial

sale, as published at http://www.nxp.com/profile/terms, unless otherwise

agreed in a valid written individua l agreement. In case an individual

agreement is concluded only the ter m s and conditions of the respective

agreement shall apply. NXP Semiconductors hereby expressly objects to

applying the customer’s general terms and conditions with regard to the

purchase of NXP Semiconductors products by customer.

No offer to sell or license — Nothing i n this document may be interpreted or

construed as an of fer t o sell product s that is open for accept ance or the gr ant,

conveyance or implication of any license under any copyrights, patents or

other industrial or inte llectual property rights.

Export control — This document as well as the item(s) described herein

may be subject to export control regulatio ns. Export might require a prior

authorization from national authorities.

Document status[1][2] Product status[3] Definition

Objective [short] data sheet Development This document contains data from the objective specification for product development.

Preliminary [short] dat a sheet Qualification This document contains data from the preliminary specification.

Product [short] data sheet Production This document contains the product specification.

Product data sheet Rev. 1 — 12 October 2010 12 of 13

NXP Semiconductors PESD5V0S1BLD

Low capacitance bidirectional ESD protection diode

Quick reference data — The Quick reference data is an extract of the

product data given in the Limiting values and Characteristics se ctions of this

document, and as such is not complete, exhaustive or legally binding.

13.4 Trademarks

Notice: All referenced b rands, produc t names, service names and trademarks

are the property of their respective ow ners.

14. Contact information

For more information, please visit: http://www.nxp.com

For sales office addresses, please send an email to: salesaddresses@nxp.com

NXP Semiconductors PESD5V0S1BLD

Low capacitance bidirectional ESD protection diode

For more information, please visit: http://www.nxp.com

For sales office addresses, please send an email to: salesaddresses@nxp.com

Date of release: 12 October 2010

Document identifier: PESD5V0S1BLD

Please be aware that important notices concerning this document and the product(s)

described herein, have been included in section ‘Legal information’.

15. Contents

1 Product profile. . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.1 General description . . . . . . . . . . . . . . . . . . . . . 1

1.2 Features and benefits. . . . . . . . . . . . . . . . . . . . 1

1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.4 Quick reference data . . . . . . . . . . . . . . . . . . . . 1

2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 2

3 Ordering information. . . . . . . . . . . . . . . . . . . . . 2

4 Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2

4.1 Binary marking code description. . . . . . . . . . . . 2

5 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3

6 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 4

7 Application information. . . . . . . . . . . . . . . . . . . 8

8 Test information. . . . . . . . . . . . . . . . . . . . . . . . . 8

8.1 Quality information . . . . . . . . . . . . . . . . . . . . . . 8

9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9

10 Packing information . . . . . . . . . . . . . . . . . . . . . 9

11 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9

12 Revision history. . . . . . . . . . . . . . . . . . . . . . . . 10

13 Legal information. . . . . . . . . . . . . . . . . . . . . . . 11

13.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 11

13.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 11

13.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 11

13.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 12

14 Contact information. . . . . . . . . . . . . . . . . . . . . 12

15 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13