©2005 Fairchild Semiconductor Corporation 1www.fairchildsemi.com
BC636 Rev. C2
BC636 PNP Epitaxial Silicon Transistor
BC636
PNP Epitaxial Silicon Transistor
Switching and Amplifier Applications
• Complement to BC635
Absolute Maximum Ratings
T
a
= 25°C unless otherwise noted
Electrical Characteristics
T
a
= 25°C unless otherwise noted
Symbol Parameter Value Units
V
CER
Collector-Emitter Voltage at R
BE
=1KΩ -45 V
V
CES
Collector-Emitter Voltage -45 V
V
CEO
Collector-Emitter Voltage -45 V
V
EBO
Emitter-Base Voltage -5 V
I
C
Collector Current -1 A
I
CP
Peak Collector Current -1.5 A
I
B
Base Current -100 mA
P
C
Collector Power Dissipation 1 W
T
J
Junction Temperature 150 °C
T
STG
Storage Temperature -65 ~ 150 °C
Symbol Parameter Test Condition Min. Typ. Max. Units
BV
CEO
Collector-Emitter Breakdown Voltage I
C
= -10mA, I
B
=0 -45 V
I
CBO
Collector Cut-off Current V
CB
= -30V, I
E
=0 -0.1 µA
I
EBO
Emitter Cut-off Current V
EB
= -5V, I
C
=0 -0.1 µA
h
FE1
h
FE2
h
FE3
DC Current Gain V
CE
= -2V, I
C
= -5mA
V
CE
= -2V, I
C
= -150mA
V
CE
= -2V, I
C
= -500mA
25
40
25
250
V
CE
(sat) Collector-Emitter Saturation Voltage I
C
= -500mA, I
B
= -50mA -0.5 V
V
BE
(on) Base-Emitter On Voltage V
CE
= -2V, I
C
= -500mA -1 V
f
T
Current Gain Bandwidth Product V
CE
= -5V, I
C
= -10mA,
f=50MHz
100 MHz
1. Emitter 2. Collector 3. Base
TO-92
1
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BC636 Rev. C2
BC636 PNP Epitaxial Silicon Transistor
Package Marking and Ordering Information
Device Marking Device Package Reel Size Tape Width Quantity
BC636 BC636BU TO-92 -- -- 10,000
BC636 BC636TA TO-92 -- -- 2,000
BC636 BC636TAR TO-92 -- -- 2,000
BC636 BC636TF TO-92 -- -- 2,000
BC636 BC636TFR TO-92 -- -- 2,000
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BC636 Rev. C2
BC636 PNP Epitaxial Silicon Transistor
Typical Performance Characteristics
Figure 1. Static Characteristic Figure 2. DC Current Gain
Figure 3. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Figure 4. Base-Emitter On Voltage
Figure 5. Collector Output Capacitance
-0 -10 -20 -30 -40 -50
-0
-100
-200
-300
-400
-500
I
B
= - 0.2 mA
I
B
= - 0.4 mA
I
B
= - 0.6 mA
I
B
= - 0.8 mA
I
B
= - 1.0 mA
I
B
= - 1.2 mA
I
B
= - 1.4 mA
I
B
= - 1.6 mA
I
B
= - 1.8 mA
I
C
[mA], COLLECTOR CURRENT
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
-1 -10 -100 -1000
10
100
1000
V
CE
= - 2V
h
FE
, DC CURRENT GAIN
I
C
[mA], COLLECTOR CURRENT
-1 -10 -100 -1000
-0.01
-0.1
-1
-10
I
C
= 10 I
B
V
CE
(sat)
V
BE
(sat)
V
BE
(sat), V
CE
(sat)[V], SATURATION VOLTAGE
I
C
[mA], COLLECTOR CURRENT
-0.2 -0.4 -0.6 -0.8 -1.0 -1.2
-1
-10
-100
-1000
V
CE
= - 2V
I
C
[mA], COLLECTOR CURRENT
V
BE
[V], BASE-EMITTER VOLTAGE
-1 -10 -100
1
10
100
f=1MHz
C
ob
[pF], CAPACITANCE
V
CB
[V], COLLECTOR-BASE VOLTAGE
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BC636 Rev. C2
BC636 PNP Epitaxial Silicon Transistor
Mechanical Dimensions
0.46 ±0.10
1.27TYP
(R2.29)
3.86MAX
[1.27 ±0.20]1.27TYP
[1.27 ±0.20]
3.60 ±0.20
14.47 ±0.40
1.02 ±0.10
(0.25) 4.58 ±0.20
4.58 +0.25
–0.15
0.38 +0.10
–0.05
0.38 +0.10
–0.05
TO-92
Dimensions in Millimeters
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to
be an exhaustive list of all such trademarks.
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BC636 Rev. C2
BC636 PNP Epitaxial Silicon Transistor
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY
ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT
CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR
SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems which,
(a) are intended for surgical implant into the body, or (b) support
or sustain life, or (c) whose failure to perform when properly used
in accordance with instructions for use provided in the labeling,
can be reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life support device
or system whose failure to perform can be reasonably expected
to cause the failure of the life support device or system, or to
affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary First Production This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed Full Production This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete Not In Production This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
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