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2010 Fairc hild Semiconductor Cor por ation NDS9948 Rev B1(W)
NDS9948
Dual 60V P-Channel PowerTrench
MOSFET
General Description
This P-Channel MOSFET is a rugged gate version of
Fairchild Semiconductor’s advanced PowerTrench
process. It has been optimized for power management
applicat i ons requiring a wide range of gate drive voltage
ratings (4.5V – 20V).
Applications
• Power managem ent
• Load switch
• Battery protection
Features
• –2.3 A, –60 V RDS(ON) = 250 mΩ @ VGS = –10 V
RDS(ON) = 500 m Ω @ V GS = –4.5 V
• Low gate charge (9nC typical )
• Fast switching speed
• High performance trench t echnology for extremely
low RDS(ON)
• High power and current handling capability
S
D
S
S
SO-8
D
D
D
G
D2 D2 D1 D1
S2G2S1G1
Pin 1
SO-8
4
3
2
1
5
6
7
8
Q1
Q2
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol Parameter Ratings Units
VDSS Drain-Source V ol tage –60 V
VGSS Gate-Source Voltage ±20 V
ID Drain Current – Continuous (Note 1a) –2.3 A
– Pulsed –10
Power Dissipation for Dual Operation 2
Power Dissipation for Single Operation (Note 1a) 1.6
(Note 1b) 1.0
PD
(Note 1c) 0.9
W
TJ, TSTG Operating and St orage Junction Temperature Range –55 to +175 °C
Thermal Characteristics
RθJA Thermal Resistance, Junction-to-Ambient (Note 1a) 78 °C/W
(Note 1c) 135 °C/W
RθJC Thermal Resi stance, J unction-to-Case (Note 1) 40 °C/W
Package Marking and Ordering Information
Device Marki ng Device Reel Siz e Tape width Quantity
NDS9948 NDS9948 13’’ 12mm 2500 units
NDS9948
January 2010
NDS9948 Rev B1(W)
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol Parameter Test Conditions Min Typ Max Units
Drain-Source Avalanche Ratings (Note 2)
WDSS Drain-Source A val anche Energy Singl e Pulse, VDD=–54 V 15 mJ
IAR Drain-Source Avalanche Current
Off Characteristics
BVDSS Drain–Sourc e Breakdown Voltage VGS = 0 V, ID = –250 µA –60 V
∆BVDSS
∆TJ Breakdown Voltage Temperature
Coefficient ID = –250 µA, Referenced to25°C
–52
mV/°C
IDSS
Zero Gate Volt age Drai n Current
VDS = –40 V, VGS = 0 V
VDS = –40 V,VGS = 0 V TJ =–55°C
–2
–25 µA
IGSSF Gate–Body Leakage, Forward VGS = 20 V, VDS = 0 V 100 nA
IGSSR Gate–Body Leakage, Reverse VGS = –20 V VDS = 0 V –100 nA
On Characteristics (Note 2)
VGS(th) Gate Threshold Voltage VDS = VGS, ID = –250 µA –1 –1.5 –3 V
∆VGS(th)
∆TJ Gate Threshold Vol tage
Temperature Coefficient ID = –250 µA, Referenced to25°C
4
mV/°C
RDS(on) Static Drain–Source
On–Resistance VGS = –10 V, ID = –2.3 A
VGS = –4.5 V, ID = –1.6 A
VGS = –10 V,ID = –2.3A , T J =125°C
138
175
225
250
500
433
mΩ
ID(on) On–State Drai n Current VGS = –10 V, VDS = –5 V –10 A
gFS Forward Transconductance VDS = –10 V, ID = –2.3 A 5 S
Dynamic Characteristics
Ciss Input Capacitance 394 pF
Coss Output Capacitance 53 pF
Crss Reverse Transfer Capacitance
VDS = –30 V, V GS = 0 V,
f = 1.0 MHz 23 pF
Switching Characteristics (Note 2)
td(on) Turn–On Delay Time 6 12 ns
tr Turn–On Rise Time 9 18 ns
td(off) Turn–Off Delay Time 16 29 ns
tf Turn–Off Fall Time
VDD = –30 V, ID = –1 A,
VGS = –10 V, RGEN = 6 Ω
3 6 ns
Qg Total Gate Charge 9 13 nC
Qgs Gate–Source Charge 1.4 nC
Qgd Gate–Drain Charge
VDS = –30 V, ID = –2.3 A,
VGS = –10 V
1.7 nC
NDS9948
–10
A
NDS9948 Rev B1(W)
Electrical Characteristics (cont.) TA = 25°C unless otherwise noted
Symbol Parameter Test Conditions Min Typ Max Units
Drain–Source Diode Characteristics and Maximum Ratings
IS Maximum Cont i nuous Drain–Source Diode Forward Current –1. 7 A
VSD
Drain–Source Di ode Forward
Voltage VGS = 0 V, IS = –1.7 A(Note 2)
–0.8
–1.2
V
trr
Reverse Recovery T i me
VGS = 0 V, IF = –2.3A,
dIF/dt = 100A /µs 25
nS
Notes:
1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the sol der mounting surface of
the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design. `
a) 78°C/W when
mounted on a
0.5in2 pad of 2
oz copper
b) 125°C/W when
mounted on a
0.02 in2 pad of
2 oz copper
c) 135°C/W when
mounted on a
minimum pad.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
NDS9948
NDS9948 Rev B1(W)
Typical Characteristics
0
2
4
6
8
10
0123456
-VDS, DRAIN TO SOURCE VOLTAGE (V)
-I
D
, DRAIN CURRENT (A)
VGS = -10V
-3.0V
-3.5V
-4.0V
-4.5V
-6.0V
0.8
1
1.2
1.4
1.6
1.8
0246810
-ID, DRAIN CURRENT (A)
R
DS(ON)
, NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
VGS=-3.5V
-4.0V
-6.0V
-10V
-4.5V
Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
-50 -25 0 25 50 75 100 125 150 175
TJ, JUNCTION TEMPERATURE (oC)
R
DS(ON)
, NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
ID = -2.3A
VGS = -10V
0.1
0.15
0.2
0.25
0.3
0.35
0.4
0.45
0.5
246810
-VGS, GATE TO SOURCE VOLTAGE (V)
R
DS(ON)
, ON-RESISTANCE (OHM)
ID = -1A
TA = 125oC
TA = 25oC
Figure 3. On-Resistance Variation
withTemperature. Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
0
1
2
3
4
5
6
11.522.533.54
-VGS, GATE TO SOURCE VOLTAGE (V)
-I
D
, DRAIN CURRENT (A)
TA = -55oC25oC
125oC
VDS = -5V
0.0001
0.001
0.01
0.1
1
10
100
0 0.2 0.4 0.6 0.8 1 1.2
-VSD, BODY DIOD E FORWARD VOLTAGE (V)
-I
S
, REVERSE DRAIN CURRENT (A)
VGS =0V
TA = 125oC
25oC
-55oC
Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
NDS9948
NDS9948 Rev B1(W)
Typical Characteristics
0
2
4
6
8
10
0246810
Qg, GATE CHARGE (nC)
-V
GS
, GATE-SOURCE VOLTAGE (V)
ID = -2.3AVDS = -20V -30V
-40V
0
100
200
300
400
500
600
0 102030405060
-VDS, DRAIN TO SOURCE VOLTAGE (V)
CAPACITANCE (pF)
CISS
COSS
CRSS
f = 1 MHz
VGS = 0 V
Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics.
0.01
0.1
1
10
100
0.1 1 10 100
-VDS, DRAIN-SOURCE VOLTAGE (V)
-I
D
, DRAIN CURRENT (A)
DC
1s
100ms
100µ
RDS(ON) LIMIT
VGS = -10V
SINGLE PULSE
RθJA = 135oC/W
TA = 25oC
10ms
1ms
10s
0
10
20
30
40
50
0.001 0.01 0.1 1 10 100 1000
t1, TIME (sec)
P(pk), PEAK TRANSIENT POWER (W)
SINGLE PULSE
RθJA = 135°C/W
TA = 25°C
Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum
Power Dissipation.
0.001
0.01
0.1
1
0.0001 0.001 0.01 0.1 1 10 100 1000
t1, TIME (sec)
r(t), NORM ALIZED EFFECTIVE TRANSIENT
THERMAL RESISTANCE
RθJA(t) = r(t) * RθJA
RθJA = 135oC/W
TJ - TA = P * RθJA(t)
Duty Cycle, D = t1 / t2
P(pk)
t1t2
SINGLE PULSE
0.01
0.02
0.05
0.1
0.2
D = 0.5
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
NDS9948
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The following includes registe red and unregistere d trademarks and service marks, owned by Fairchild Semicond uctor and/or its g lobal subsidiaries, and i s not
intended to be an exhaustive list of all such trademarks.
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PRODUCT STATUS DEFINITIONS
Definition of Terms
AccuPower™
Auto-SPM™
Build it Now™
CorePLUS™
CorePOWER™
CROSSVOLT™
CTL™
Current Transfer Logic™
DEUXPEED®
Dual Cool™
EcoSPARK®
EfficentMax™
EZSWITCH™*
™*
Fairchild®
Fairchild Semiconductor®
FACT Quiet Series™
FACT®
FAST®
FastvCore™
FETBench™
FlashWriter® *
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MicroFET™
MicroPak™
MicroPak2™
MillerDrive™
MotionMax™
Motion-SPM™
OptiHiT™
OPTOLOGIC®
OPTOPLANAR®
®
PDP SPM™
Power-SPM™
PowerTrench®
PowerXS™
Programmable Active Droop™
QFET®
QS™
Quiet Series™
RapidConfigure™
Saving our world, 1mW/W/kW at a time™
SignalWise™
SmartMax™
SMART START™
SPM®
STEALTH™
SuperFET™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SupreMOS™
SyncFET™
Sync-Lock™
®*
The Power Franchise®
®
TinyBoost™
TinyBuck™
TinyCalc™
TinyLogic®
TINYOPTO™
TinyPower™
TinyPWM™
TinyWire™
TriFault Detect™
TRUECURRENT™*
μSerDes™
UHC®
Ultra FRFET™
UniFET™
VCX™
VisualMax™
XS™
tm
®
tm
tm
Datasheet Identification Product Status Definition
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Rev. I46
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