@vic MMBT3904LT1 SOT-23 Plastic-Encapsulate Transistors MMBT3904LT1 SOT-23 TRANSISTOR (NPN) 1. BASE 2. EMITTER FEATURES 3. COLLECTOR W (Tamb=25) 2. 4 1. 3 0. 95 0. 4 2. 9 Collector current 0.2 A ICM: Collector-base voltage 60 V V(BR)CBO: Operating and storage junction temperature range 0. 95 0.2 1. 9 PCM: 1. 0 Power dissipation Unit: mm TJ, Tstg: -55 to +150 ELECTRICAL CHARACTERISTICS (Tamb=25 Parameter unless otherwise specified) Symbol Test conditions MIN MAX UNIT Collector-base breakdown voltage V(BR)CBO Ic= 100 A, IE=0 60 V Collector-emitter breakdown voltage V(BR)CEO Ic= 1 mA, IB=0 40 V Emitter-base breakdown voltage V(BR)EBO IE= 100A, IC=0 6 V Collector cut-off current ICBO VCB= 60V, IE=0 0.1 A Collector cut-off current ICEO VCE= 40V, IB=0 0.1 A Emitter cut-off current IEBO VEB= 5V, IC=0 0.1 A HFE(1) VCE=10V, IC= 1mA 100 HFE(2) VCE= 1V, IC= 50mA 60 Collector-emitter saturation voltage VCE(sat) IC=50mA, IB= 5mA 0.3 V Base-emitter saturation voltage VBE(sat) IC= 50mA, IB= 5mA 0.95 V 300 DC current gain VCE= 20V, IC= 10mA Transition frequency fT Delay Time td VCC=3.0Vdc, VBE=-0.5Vdc 35 nS Rise Time tr IC=10mAdc, IB1=1.0mAdc 35 nS Storage Time ts VCC=3.0Vdc, IC=10mAdc 200 nS Fall Time tf IB1=IB2=1.0mAdc 50 nS f=100MHz 250 MHz DEVICE MARKING MMBT3904LT1=1AM Copyright @vic Electronics Corp. Website http://www.avictek.com