1.9
0.950.95
2.9
0.4
1. 3
2. 4
1.0
@vic SOT-23 Plastic-Encapsulate Transistors
MMBT5551LT1 TRANSISTOR (NPN)
FEATURES
Power dissipation
PCM: 0.3 W (Tamb=25℃)
Collector current
ICM: 0.6 A
Collector-base voltage
V(BR)CBO: 180 V
Operating and storage junction temperature range
TJ, Tstg: -55℃ to +150℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter Symbol Test conditions MIN MAX UNIT
Collector-base breakdown voltage V(BR)CBO Ic= 100µA, IE=0 180 V
Collector-emitter breakdown voltage V(BR)CEO Ic= 0.1mA, IB=0 160 V
E mitter-base break down vol t age V(BR)EBO IE= 100µA, IC=0 6 V
Collector cut-off current ICBO V
CB=180V, IE=0 0.1
µA
E mitte r cut-off current IEBO V
EB= 4V, IC=0 0.1
µA
hFE(1) V
CE= 5V, I C= 1mA 80
hFE(2) V
CE= 5V, I C=10mA 80 250
DC current gain
hFE(3) V
CE= 5V, I C=50mA 30
Collector-emitter saturation voltage VCE(sat) IC=50 mA, IB= 5mA 0.5 V
Base-emitter satu ration voltage VBE(sat) IC= 50 mA, IB= 5mA 1 V
Trans ition frequency fT V
CE=10V, IC= 10mA, f=100MHz 80 MHz
DEVICE MARKING
MMBT5551LT1=G1
Unit: mm
SOT-23
1. BASE
2. E MITTER
3. COLLECTOR