Supertex inc.
Supertex inc. ● 1235 Bordeaux Drive, Sunnyvale, CA 94089 ● Tel: 408-222-8888 ● www.supertex.com
TN0110
Features
►Low threshold - 2.0V max.
►High input impedance
►Low input capacitance - 50pF typical
►Fast switching speeds
►Low on-resistance
►Free from secondary breakdown
►Low input and output leakage
Applications
►Logic level interfaces – ideal for TTL and CMOS
►Solid state relays
►Battery operated systems
►Photo voltaic drives
►Analog switches
►General purpose line drivers
►Telecom switches
General Description
This low threshold, enhancement-mode (normally-off) transistor
utilizes a vertical DMOS structure and Supertex’s well-proven,
silicon-gate manufacturing process. This combination produces a
device with the power handling capabilities of bipolar transistors
and the high input impedance and positive temperature coefcient
inherent in MOS devices. Characteristic of all MOS structures,
this device is free from thermal runaway and thermally-induced
secondary breakdown.
Supertex’s vertical DMOS FETs are ideally suited to a wide range
of switching and amplifying applications where very low threshold
voltage, high breakdown voltage, high input impedance, low input
capacitance, and fast switching speeds are desired.
N-Channel Enhancement-Mode
Vertical DMOS FET
Pin Congurations
TO-92 (N3)
GATE
SOURCE
DRAIN
YY = Year Sealed
WW = Week Sealed
= “Green” Packaging
SiTN
0110
YYWW
TO-92 (N3)
Product Marking
Package may or may not include the following marks: Si or
Absolute Maximum Ratings
Parameter Value
Drain-to-source voltage BVDSS
Drain-to-gate voltage BVDGS
Gate-to-source voltage ±20V
Operating and storage temperature -55OC to +150OC
Absolute Maximum Ratings are those values beyond which damage to the device
may occur. Functional operation under these conditions is not implied. Continuous
operation of the device at the absolute rating level may affect device reliability. All
voltages are referenced to device ground.
Ordering Information
Device
Package Wafer / Die Options
TO-92 NW
(Die in wafer form)
NJ
(Die on adhesive tape)
ND
(Die in wafe pack)
TN0110 TN0110N3-G TN1510NW TN1510NJ TN1510ND
For packaged products, -G indicates package is RoHS compliant (‘Green’). Devices in Wafer / Die form are RoHS compliant (‘Green’).
Refer to Die Specication VF15 for layout and dimensions.
Product Summary
Device BVDSS/BVDGS
(V)
RDS(ON)
(max)
(Ω)
ID(ON)
(min)
(A)
VGS(th)
(max)
(V)
TN0110N3-G 100 3.0 2.0 2.0
2
TN0110
Supertex inc. ● 1235 Bordeaux Drive, Sunnyvale, CA 94089 ● Tel: 408-222-8888 ● www.supertex.com
Electrical Characteristics (TA = 25OC unless otherwise specied)
Sym Parameter Min Typ Max Units Conditions
BVDSS Drain-to-source breakdown voltage 100 - - V VGS = 0V, ID = 1.0mA
VGS(th) Gate threshold voltage 0.6 - 2.0 V VGS = VDS, ID= 0.5mA
ΔVGS(th) Change in VGS(th) with temperature - -3.2 -5.0 mV/OC VGS = VDS, ID= 1.0mA
IGSS Gate body leakage - - 100 nA VGS = ± 20V, VDS = 0V
IDSS Zero Gate voltage drain current
- - 10 µA VGS = 0V, VDS = Max Rating
- - 500 µA VGS = 0V, VDS = 0.8 Max Rat-
ing, TA = 125°C
ID(ON) ON-state drain current 0.75 1.4 - AVGS = 5.0V, VDS = 25V
2.0 3.4 - VGS = 10V, VDS = 25V
RDS(ON) Static drain-to-source on-state resistance - 2.0 4.5 ΩVGS = 4.5V, ID = 250mA
- 1.6 3.0 VGS = 10V, ID = 500mA
ΔRDS(ON) Change in RDS(ON) with temperature - 0.6 1.1 %/OC VGS = 10V, ID = 500mA
GFS Forward transductance 225 400 - mmho VDS = 25V, ID = 500mA
CISS Input capacitance - 50 60
pF
VGS = 0V,
VDS = 25V,
f = 1.0MHz
COSS Common source output capacitance - 25 35
CRSS Reverse transfer capacitance - 4.0 8.0
td(ON) Turn-on delay time - 2.0 5.0
ns
VDD = 25V,
ID = 1.0A,
RGEN = 25Ω
trRise time - 3.0 5.0
td(OFF) Turn-off delay time - 6.0 7.0
tfFall time - 3.0 6.0
VSD Diode forward voltage drop 1.0 1.5 V VGS = 0V, ISD = 500mA
trr Reverse recovery time - 400 - ns VGS = 0V, ISD = 500mA
Notes:
1. All D.C. parameters 100% tested at 25OC unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)
2. All A.C. parameters sample tested.
Notes:
† ID (continuous) is limited by max rated Tj .
Thermal Characteristics
Package
ID
(continuous)†
(mA)
ID
(pulsed)
(A)
Power Dissipation
@TC = 25OC
(W)
θjc
(OC/W)
θja
(OC/W)
IDR
†
(mA)
IDRM
(A)
TO-92 350 2.0 1.0 125 170 350 2.0
Switching Waveforms and Test Circuit
90%
10%
90% 90%
10%
10%
Pulse
Generator
V
DD
R
L
OUTPUT
D.U.T.
t
(ON)
t
d(ON)
t
(OFF)
t
d(OFF)
t
r
INPUT
INPUT
OUTPUT
10V
VDD
R
GEN
0V
0V
t
f
3
TN0110
Supertex inc. ● 1235 Bordeaux Drive, Sunnyvale, CA 94089 ● Tel: 408-222-8888 ● www.supertex.com
Typical Performance Curves
Output Characteristics
5.0
4.0
3.0
2.0
1.0
0
0 10 20 30 40 50
V
DS
(volts)
I
D
(amperes)
Saturation Characteristics
0 2.0 4.0 6.0 8.0 10
Maximum Rated Safe Operating Area
1.0 10 100 1000
10
1.0
0.1
0.01
V
DS
(volts)
Thermal Response Characteristics
Thermal Resistance (normalized)
1.0
0.8
0.6
0.4
0.2
0
0.001 0.01 0.1 1.0 10
t
p
(seconds)
Transconductance vs. Drain Current
0.5
0.4
0.3
0.2
0.1
0
0 0.6 1.2 1.8 2.4 3.0
G
FS
(siemens)
I
D
(amperes)
Power Dissipation vs. Case Temperature
0 25 50 75 100 125 150
2.0
1.0
0
T
C
(
O
C)
P
D
(watts)
V
DS
= 25V
TO-92
TO-92
T
C
= 25
O
C
P
D
= 1W
TO-92 (DC)
TO-92 (pulsed)
8V
6V
4V
2V
T
A
= -55
O
C
V
GS
= 10V
T
C
= 25
O
C
V
DS
(volts)
8V
6V
4V
2V
V
GS
= 10V
I
D
(amperes)
T
A
= 25
O
C
T
A
= 150
O
C
I
D
(amperes)
5.0
4.0
3.0
2.0
1.0
0
4
TN0110
Supertex inc. ● 1235 Bordeaux Drive, Sunnyvale, CA 94089 ● Tel: 408-222-8888 ● www.supertex.com
Typical Performance Curves (cont.)
Gate Drive Dynamic Characteristics
Q
G
(nanocoulombs)
V
GS
(volts) V
GS(th)
(normalized)
R
DS(ON)
(normalized)
V
(th)
and R
DS
Variation with Temperature
On-Resistance vs. Drain Current
I
D
(amperes)
R
DS(ON)
(ohms)
BV
DSS
Variation with Temperature
BV
DSS
(normalized)
T
j
(
O
C)
Transfer Characteristics
V
GS
(volts)
I
D
(amperes)
Capacitance vs. Drain-to-Source Voltage
100
75
50
25
0
C (picofarads)
V
DS
(volts)
0 10 20 30 40
0 2.0 4.0 6.0 8.0 10
3.0
2.4
1.8
1.2
0.6
0
-50 0 50 100 150
1.3
1.2
1.0
1.0
0.9
0.8
5.0
4.0
3.0
2.0
1.0
00 1.0 2.0 3.0 4.0 5.0
1.4
1.2
1.0
0.8
0.6
0.4
10
8.0
6.0
4.0
2.0
0
0 1.0 2.0 3.0 4.0 5.0
-50 0 50 100 150
f = 1.0MHz
50pF
VGS = 5.0V
VDS = 25V
TA = -55OC
25OC
150OC
V(th) @ 0.5mA
RDS(ON) @ 10V, 0.5A
CISS
COSS
CRSS
VDS = 10V
55pF
VGS = 10V
T
j
(
O
C)
VDS = 40V
1.4
1.2
1.0
0.8
0.6
0.4
Supertex inc. does not recommend the use of its products in life support applications, and will not knowingly sell them for use in such applications unless it receives
an adequate “product liability indemnification insurance agreement.” Supertex inc. does not assume responsibility for use of devices described, and limits its liability
to the replacement of the devices determined defective due to workmanship. No responsibility is assumed for possible omissions and inaccuracies. Circuitry and
specifications are subject to change without notice. For the latest product specifications refer to the Supertex inc. (website: http//www.supertex.com)
©2011 Supertex inc. All rights reserved. Unauthorized use or reproduction is prohibited.
Supertex inc.
1235 Bordeaux Drive, Sunnyvale, CA
94089
Tel: 408-222-8888
www
.supertex.com
5
TN0110
(The package drawing(s) in this data sheet may not reect the most current specications. For the latest package outline
information go to http://www.supertex.com/packaging.html.)
Doc.# DSFP-TN0110
B030411
3-Lead TO-92 Package Outline (N3)
Symbol A b c D E E1 e e1 L
Dimensions
(inches)
MIN .170 .014†.014†.175 .125 .080 .095 .045 .500
NOM - - - - - - - - -
MAX .210 .022†.022†.205 .165 .105 .105 .055 .610*
JEDEC Registration TO-92.
* This dimension is not specied in the JEDEC drawing.
† This dimension differs from the JEDEC drawing.
Drawings not to scale.
Supertex Doc.#: DSPD-3TO92N3, Version E041009.
Seating
Plane
1
2
3
Front View Side View
Bottom View
E1 E
D
e1
L
e
c
1 2 3
b
A