© Semiconductor Components Industries, LLC, 2012
August, 2012 − Rev. 13
1Publication Order Number:
BD135/D
BD135, BD137, BD139
Plastic Medium Power
Silicon NPN Transistors
This series of plastic, medium−power silicon NPN transistors are
designed for use as audio amplifiers and drivers utilizing
complementary or quasi complementary circuits.
Features
•DC Current Gain − hFE = 40 (Min) @ IC = 0.15 Adc
•BD 135, 137, 139 are complementary with BD 136, 138, 140
•These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant*
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector−Emitter Voltage BD135
BD137
BD139
VCEO 45
60
80
Vdc
Collector−Base Voltage BD135
BD137
BD139
VCBO 45
60
100
Vdc
Emitter−Base Voltage VEBO 5.0 Vdc
Collector Current IC1.5 Adc
Base Current IB0.5 Adc
Total Device Dissipation @ TA = 25°C
Derate above 25°C
PD1.25
10
Watts
mW/°C
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD12.5
100
Watts
mW/°C
Operating and Storage Junction
Temperature Range
TJ, Tstg – 55 to
+ 150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recom-
mended Operating Conditions is not implied. Extended exposure to
stresses above the Recommended Operating Conditions may affect
device reliability.
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance,
Junction−to−Case
qJC 10 °C/W
Thermal Resistance,
Junction−to−Ambient
qJA 100 °C/W
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
http://onsemi.com
Device Package Shipping†
1.5 A POWER TRANSISTORS
NPN SILICON
45, 60, 80 V, 12.5 W
Y = Year
WW = Work Week
xx = 35, 37, 39
G = Pb−Free Package
BD139G TO−225AA
(Pb−Free)
500 Units / Box
TO−225
CASE 77
STYLE 1
MARKING DIAGRAM
YWW
BD1xxG
123
BD135TG TO−225AA
(Pb−Free)
50 Units / Rail
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
BD135G TO−225AA
(Pb−Free)
500 Units / Box
BD137G TO−225AA
(Pb−Free)
500 Units / Box
ORDERING INFORMATION
BD135, BD137, BD139
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
Characteristic Symbol Type Min Max UnIt
Collector−Emitter Sustaining Voltage*
(IC = 0.03 Adc, IB = 0)
BVCEO*
BD135
BD137
BD139
45
60
80
−
−
−
Vdc
Collector Cutoff Current
(VCB = 30 Vdc, IE = 0)
(VCB = 30 Vdc, IE = 0, TC = 125_C)
ICBO
−
−
0.1
10
mAdc
Emitter Cutoff Current
(VBE = 5.0 Vdc, IC = 0)
IEBO −10 mAdc
DC Current Gain
(IC = 0.005 A, VCE = 2 V)
(IC = 0.15 A, VCE = 2 V)
(IC = 0.5 A VCE = 2 V)
hFE*
25
40
25
−
250
−
−
Collector−Emitter Saturation Voltage*
(IC = 0.5 Adc, IB = 0.05 Adc)
VCE(sat)*−0.5 Vdc
Base−Emitter On Voltage*
(IC = 0.5 Adc, VCE = 2.0 Vdc)
VBE(on)*−1 Vdc
*Pulse Test: Pulse Width x 300 ms, Duty Cycle x 2.0%.
10.0
1
Figure 1. Active−Region Safe Operating Area
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
5.0
2.0
1.0
0.5
0.01 2 5 10 20 80
BD135
BD137
BD139
50
0.1
0.05
IC, COLLECTOR CURRENT (AMP)
TJ = 125°Cdc
5 ms 0.5 ms
0.1 ms
0.02
BD135, BD137, BD139
http://onsemi.com
3
PACKAGE DIMENSIONS
TO−225
CASE 77−09
ISSUE AA
STYLE 1:
PIN 1. EMITTER
2. COLLECTOR
3. BASE
DIM MIN MAX
MILLIMETERS
D10.60 11.10
E7.40 7.80
A2.40 3.00
b0.60 0.90
P2.90 3.30
L1 1.27 2.54
c0.39 0.63
L14.50 16.63
b2 0.51 0.88
Q3.80 4.20
A1 1.00 1.50
e2.04 2.54
E
123
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. NUMBER AND SHAPE OF LUGS OPTIONAL.
2X
2X
Q
D
L1
P
b2
b
ec
L
A1
A
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Phone: 81−3−5817−1050
BD135/D
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