BAT54SWT1G - ON Semiconductor - Datasheet.Support

October, 2005 − Rev. 8 Publication Order Number:

BAT54SWT1/D

BAT54SWT1

Preferred Device

Dual Series Schottky

Barrier Diodes

These Schottky barrier diodes are designed for high speed switching

applications, circuit protection, and voltage clamping. Extremely low

forward voltage reduces conduction loss. Miniature surface mount

package is excellent for hand held and portable applications where

space is limited.

Features

•Extremely Fast Switching Speed

•Low Forward Voltage − 0.35 Volts (Typ) @ IF = 10 mAdc

•Pb−Free Package is Available

MAXIMUM RATINGS (TJ = 125°C unless otherwise noted)

Rating Symbol Value Unit

Reverse Voltage VR30 V

Forward Power Dissipation

@ TA = 25°C

Derate above 25°C

PF200

1.6 mW

mW/°C

Forward Current (DC) IF200 Max mA

Junction Temperature TJ−55 to 125 °C

Storage Temperature Range Tstg −55 to +150 °C

Maximum ratings are those values beyond which device damage can occur.

Maximum ratings applied to the device are individual stress limit values (not

normal operating conditions) and are not valid simultaneously. If these limits are

exceeded, device functional operation is not implied, damage may occur and

reliability may be affected.

Preferred devices are recommended choices for future use

and best overall value.

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30 VOLT

DUAL SERIES SCHOTTKY

BARRIER DIODES

CATHODE/ANODE

ANODE 2

CATHODE

Device Package Shipping†

ORDERING INFORMATION

BAT54SWT1 SOT−323 3000 / Tape & Reel

BAT54SWT1G SOT−323

(Pb−Free) 3000 / Tape & Reel

† For information on tape and reel specifications,

including part orientation and tape sizes, please

refer t o our Tape and Reel Packaging Specification

Brochure, BRD8011/D.

SOT−323

CASE 419

STYLE 9

MARKING

DIAGRAM

B8M G

B8 = Device Code

M = Date Code*

G= Pb−Free Package

(Note: Microdot may be in either location)

*Date Code orientation may vary depending

upon manufacturing location.

BAT54SWT1

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ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (EACH DIODE)

Characteristic Symbol Min Typ Max Unit

Reverse Breakdown Voltage

(IR = 10 mA) V(BR)R 30 − − V

Total Capacitance

(VR = 1.0 V, f = 1.0 MHz) CT− 7.6 10 pF

Reverse Leakage

(VR = 25 V) IR− 0.5 2.0 mAdc

Forward Voltage

(IF = 0.1 mAdc) VF− 0.22 0.24 Vdc

Forward Voltage

(IF = 30 mAdc) VF− 0.41 0.5 Vdc

Forward Voltage

(IF = 100 mAdc) VF− 0.52 0.8 Vdc

Reverse Recovery Time

(IF = IR = 10 mAdc, IR(REC) = 1.0 mAdc, Figure 1) trr − − 5.0 ns

Forward Voltage

(IF = 1.0 mAdc) VF− 0.29 0.32 Vdc

Forward Voltage

(IF = 10 mAdc) VF− 0.35 0.40 Vdc

Forward Current (DC) IF− − 200 mAdc

Repetitive Peak Forward Current IFRM − − 300 mAdc

Non−Repetitive Peak Forward Current

(t < 1.0 s) IFSM − − 600 mAdc

Notes: 1. A 2.0 kW variable resistor adjusted for a Forward Current (IF) of 10 mA.

Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA.

Notes: 3. tp » trr

+10 V 2 k

820

0.1 mF

DUT

100 mH0.1 mF

50 W OUTPUT

PULSE

GENERATOR

50 W INPUT

SAMPLING

OSCILLOSCOPE

trtpT

10%

90%

trr T

iR(REC) = 1 mA

OUTPUT PULSE

(IF = IR = 10 mA; measure

at iR(REC) = 1 mA)

INPUT SIGNAL

Figure 1. Recovery Time Equivalent Test Circuit

BAT54SWT1

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CT, TOATAL CAPACITANCE (pF)

100

0.0 0.1VF, FORWARD VOLTAGE (VOLTS)

0.2 0.3 0.4 0.5

1.0

0.1

85°C

0VR, REVERSE VOLTAGE (VOLTS)

1.0

0.1

0.01

0.001 51015 20 25

0VR, REVERSE VOLTAGE (VOLTS)

51015 30

Figure 2. Forward Voltage

Figure 3. Leakage Current

Figure 4. Total Capacitance

−40°C

25°C

TA = 150°C

0.6

−55°C

150°C

125°C

100

1000

2520

IR, REVERSE CURRENT (mA) IF, FORWARD CURRENT (mA)

TA = 125°C

TA = 85°C

TA = 25°C

BAT54SWT1

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PACKAGE DIMENSIONS

SOT−323 (SC−70)

CASE 419−04

ISSUE M

AA2

De1

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

0.05 (0.002)

HEDIM

AMIN NOM MAX MIN

MILLIMETERS

0.80 0.90 1.00 0.032

INCHES

A1 0.00 0.05 0.10 0.000

A2 0.7 REF

b0.30 0.35 0.40 0.012

c0.10 0.18 0.25 0.004

D1.80 2.10 2.20 0.071

E1.15 1.24 1.35 0.045

e1.20 1.30 1.40 0.047

0.035 0.040

0.002 0.004

0.014 0.016

0.007 0.010

0.083 0.087

0.049 0.053

0.051 0.055

NOM MAX

L2.00 2.10 2.40 0.079 0.083 0.095

e1 0.65 BSC

0.425 REF

0.028 REF

0.026 BSC

0.017 REF

1.9

0.075

0.65

0.025

0.65

0.025

0.9

0.035

0.7

0.028 ǒmm

inchesǓ

SCALE 10:1

*For additional information on our Pb−Free strategy and soldering

details, please download the ON Semiconductor Soldering and

Mounting Techniques Reference Manual, SOLDERRM/D.

SOLDERING FOOTPRINT*

STYLE 9:

PIN 1. ANODE

2. CATHODE

3. CATHODE−ANODE

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BAT54SWT1/D

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