IRF513 - Harris Semiconductor - Datasheet.Support

5-1

Semiconductor

Features

• 4.9A, and 5.6A, 80V and 100V

•r

DS(ON) = 0.54Ω and 0.74Ω

• Single Pulse Avalanche Energy Rated

• SOA is Power Dissipation Limited

• Nanosecond Switching Speeds

• Linear Transfer Characteristics

• High Input Impedance

• Related Literature

- TB334 “Guidelines for Soldering Surface Mount

Components to PC Boards”

Description

These are N-Channel enhancement mode silicon gate

power ﬁeld effect transistors. They are advanced power

MOSFETs designed, tested, and guaranteed to withstand a

speciﬁed level of energy in the breakdown avalanche mode

of operation. All of these power MOSFETs are designed for

applications such as switching regulators, switching conver-

tors, motor drivers, relay drivers, and drivers for high power

bipolar switching transistors requiring high speed and low

gate drive power. These types can be operated directly from

integrated circuits.

Formerly developmental type TA17441.

Symbol

Packaging

JEDEC TO-220AB

Ordering Information

PART NUMBER PACKAGE BRAND

IRF510 TO-220AB IRF510

IRF511 TO-220AB IRF511

IRF512 TO-220AB IRF512

IRF513 TO-220AB IRF513

NOTE: When ordering, include the entire part number.

SOURCE

DRAIN (FLANGE)

DRAIN

GATE

January 1998

CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures.

IRF510, IRF511,

IRF512, IRF513

4.9A, and 5.6A, 80V and 100V, 0.54 and 0.74 Ohm,

N-Channel Power MOSFETs

5-2

Absolute Maximum Ratings TC = 25oC, Unless Otherwise Speciﬁed

IRF510 IRF511 IRF512 IRF513 UNITS

Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . .VDS 100 80 100 80 V

Drain to Gate Voltage (RGS = 20kΩ) (Note 1). . . . . . . . . . VDGR 100 80 100 80 V

Continuous Drain Current. . . . . . . . . . . . . . . . . . . . . . . . . . . . .ID5.6 5.6 4.9 4.9 A

TC = 100oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ID4 4 3.4 3.4 A

Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . IDM 20 20 18 18 A

Gate to Source Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGS ±20 ±20 ±20 ±20 V

Maximum Power Dissipation. . . . . . . . . . . . . . . . . . . . . . . . . .PD43 43 43 43 W

Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.29 0.29 0.29 0.29 W/oC

Single Pulse Avalanche Energy Rating (Note 4) . . . . . . . . . EAS 19 19 19 19 mJ

Operating and Storage Temperature Range. . . . . . . . . TJ, TSTG -55 to 175 -55 to 175 -55 to 175 -55 to 175 oC

Maximum Temperature for Soldering

Leads at 0.063in (1.6mm) from 25ase for 10s . . . . . . . . . . TL

Package Body for 10s, See Techbrief 334 . . . . . . . . . . . .Tpkg 300

260 300

260

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation

of the device at these or any other conditions above those indicated in the operational sections of this speciﬁcation is not implied.

NOTE:

1. TJ = 25oC to 150oC.

Electrical Speciﬁcations TC = 25oC, Unless Otherwise Speciﬁed

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Drain to Source Breakdown Voltage BVDSS VGS = 0V, ID = 250µA, (Figure 10)

IRF510 IRF512 100 - - V

IRF511, IRF513 80 - - V

Gate to Threshold Voltage VGS(TH) VGS = VDS, ID = 250µA 2.0 - 4.0 V

Zero-Gate Voltage Drain Current IDSS VDS = Rated BVDSS, VGS = 0V - - 25 µA

VDS = 0.8 x Rated BVDSS, VGS = 0V TJ = 150oC - - 250 µA

On-State Drain Current (Note 2) ID(ON) VDS > ID(ON) x rDS(ON)MAX, VGS = 10V,

(Figure 7)

IRF510, IRF511 5.6 - - A

IRF512, IRF513 4.9 - - A

Gate to Source Leakage Current IGSS VGS = ±20V - - ±100 nA

Drain to Source On Resistance (Note 2) rDS(ON) VGS = 10V, ID = 3.4A, (Figures 8, 9)

IRF510, IRF511 - 0.4 0.54 Ω

IRF512, IRF513 - 0.5 0.74 Ω

Forward Transconductance (Note 2) gfs VGS = 50V, ID = 3.4A, (Figure 12) 1.3 2.0 - S

Turn-On Delay Time td(ON) ID≈5.6A, RGS = 24Ω, V

DD = 50V, RL = 9Ω

VDD = 50V, VGS = 10V, (Figures 17, 18)

MOSFET switching times are essentially

independent of operating temperature

- 8 11 ns

Rise Time tr-2536ns

Turn-Off Delay Time td(OFF) -1521ns

Fall Time tf-1221ns

Total Gate Charge

(Gate to Source + Gate to Drain) Qg(TOT) VGS = 10V, ID = 5.6A, VDS = 0.8 x Rated BVDSS,

IG(REF) = 1.5mA (Figures 14, 19, 20)

Gate charge is essentially independent of

operating temperature

- 5.0 7.7 nC

Gate to Source Charge Qgs - 2.0 - nC

Gate to Drain “Miller” Charge Qgd - 3.0 - nC

IRF510, IRF511, IRF512, IRF513

5-3

IRF510, IRF511, IRF512, IRF513

Input Capacitance CISS VGS = 0V, VDS = 25V, f = 1.0MHz, (Figure 11) - 135 - pF

Output Capacitance COSS -80- pF

Reverse-Transfer Capacitance CRSS -20- pF

Internal Drain Inductance LDMeasured From the

Contact Screw On Tab

To Center of Die

Modified MOSFET

Symbol Showing the

Internal Devices

Inductances

- 3.5 - nH

Measured From the

Drain Lead, 6mm

(0.25in) From Package

to Center of Die

- 4.5 - nH

Internal Source Inductance LSMeasured From The

Source Lead, 6mm

(0.25in) From Header to

Source Bonding Pad

- 7.5 - nH

Thermal Resistance Junction to Case RθJC - - 3.5 oC/W

Thermal Resistance Junction to Ambient RθJA Free air operation - - 80 oC/W

Source to Drain Diode Speciﬁcations

PARAMETER SYMBOL Test Conditions MIN TYP MAX UNITS

Continuous Source to Drain Current ISD Modified MOSFET

Symbol Showing the

Integral Reverse

P-N Junction Diode

- - 5.6 A

Pulse Source to Drain Current

(Note 3) ISDM - - 20 A

Source to Drain Diode Voltage (Note 2) VSD TJ = 25oC, ISD = 5.6A, VGS = 0V (Figure 13) - - 2.5 V

Reverse Recovery Time trr TJ = 25oC, ISD = 5.6A, dISD/dt = 100A/µs 4.6 96 200 ns

Reverse Recovered Charge QRR TJ = 25oC, ISD = 5.6A, dISD/dt = 100A/µs 0.17 0.4 0.83 µC

NOTES:

2. Pulse test: pulse width ≤ 300µs, duty cycle ≤ 2%.

3. Repetitive rating: pulse width limited by max junction temperature. See Transient Thermal Impedance curve (Figure 3).

4. VDD = 25V, start TJ = 25oC, L = 910µH, RG = 25Ω, peak IAS = 5.6A (See Figure 15, 16).

Electrical Speciﬁcations TC = 25oC, Unless Otherwise Speciﬁed (Continued)

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

5-4

Typical Performance Curves

Unless Otherwise Speciﬁed

FIGURE 1. NORMALIZED POWER DISSIPATION vs

CASE TEMPERATURE FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs

CASE TEMPERATURE

FIGURE 3. MAXIMUM TRANSIENT THERMAL IMPEDANCE

FIGURE 4. FORWARD BIAS SAFE OPERATING AREA FIGURE 5. OUTPUT CHARACTERISTICS

TC, CASE TEMPERATURE (oC)

25 50 75 100 125 150 175

POWER DISSIPATION MULTIPLIER

0.2

0.4

0.6

0.8

1.0

1.2

TC, CASE TEMPERATURE (oC)

50 75 100 15025 175

ID, DRAIN CURRENT (A)

IRF510, IRF511

2IRF512, IRF513

125

ZθJC, TRANSIENT

0.1

0.01 10-2

10-5 10-4 10-3 0.1 1 10

SINGLE PULSE

t1, RECTANGULAR PULSE DURATION (S)

DUTY FACTOR: D = t1/t2

PEAK TJ= PDM x ZθJC + TC

PDM

NOTES:

THERMAL IMPEDANCE (oC/W)

0.01

0.02

0.5

0.2

0.1

0.05

100

103

110

102

0.1

ID, DRAIN CURRENT (A)

VDS, DRAIN TO SOURCE VOLTAGE (V)

OPERATION IN THIS

REGION IS LIMITED

BY rDS(ON)

TC = 25oC

IRF510, 1 10µs

IRF512, 3

IRF510, 1

IRF512.3

100µs

1ms

IRF511, 3 IRF510, 2

TJ = 175oC

SINGLE PULSE

VDS, DRAIN TO SOURCE VOLTAGE (V)

10 20 30 40050

ID, DRAIN CURRENT (A)

VGS = 10V

VGS = 8V

VGS = 7V

VGS = 6V

VGS = 5V

VGS = 4V

80µs PULSE TEST

IRF510, IRF511, IRF512, IRF513

5-5

FIGURE 6. SATURATION CHARACTERISTICS FIGURE 7. TRANSFER CHARACTERISTICS

FIGURE 8. DRAIN T O SOURCE ON RESISTANCE vs GATE

VOLTAGE AND DRAIN CURRENT FIGURE 9. NORMALIZED DRAIN TO SOURCE ON

RESISTANCE vs JUNCTION TEMPERATURE

FIGURE 10. NORMALIZED DRAIN T O SOURCE BREAKDO WN

VOLTAGE vs JUNCTION TEMPERATURE FIGURE 11. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE

Typical Performance Curves

Unless Otherwise Speciﬁed (Continued)

VDS, DRAIN TO SOURCE VOLTAGE (V)

2468010

ID, DRAIN CURRENT (A)

VGS = 10V

VGS = 8V

VGS = 7V

VGS = 6V

VGS = 5V

VGS = 4V

80µs PULSE TEST

VDS ≥ 50V

80µs PULSE TEST

TJ = 175oCTJ = 25oC

ID(ON), ON-STATE DRAIN CURRENT (A)

VGS, GATE TO SOURCE VOLTAGE (V)

0.1

10-20 246810

D, DRAIN CURRENT (A)

4 8 12 16020

5.0

4.0

3.0

2.0

rDS(ON), DRAIN TO SOURCE

VGS = 20V

80µs PULSE TEST

1.0

VGS = 10V

ON RESISTANCE (Ω)

3.0

1.8

0.6

0 60 160 180-60 TJ, JUNCTION TEMPERATURE (oC)

NORMALIZED ON RESISTANCE

ID = 3.4A

2.4

1.2

0-40 -20 20 40 80 100 140120

VGS = 10V

1.25

1.05

0.85

0 60 160 180-60 TJ, JUNCTION TEMPERATURE (oC)

NORMALIZED DRAIN TO SOURCE

ID = 250µA

1.15

0.95

0.75 -40 -20 20 40 80 100 140120

BREAKDOWN VOLTAGE

VDS, DRAIN TO SOURCE VOLTAGE (V)

C, CAPACITANCE (pF)

500

400

300

200

100

VGS = 0V, f = 1MHz

CISS = CGS + CGD

CRSS = CGD

COSS ≈ CDS + CGD

CISS

COSS

CRSS

12510 25102

IRF510, IRF511, IRF512, IRF513

5-6

IRF510, IRF511, IRF512, IRF513

FIGURE 12. TRANSCONDUCTANCE vs DRAIN CURRENT FIGURE 13. SOURCE TO DRAIN DIODE VOLTAGE

FIGURE 14. GATE TO SOURCE VOLTAGE vs GATE CHARGE

Typical Performance Curves

Unless Otherwise Speciﬁed (Continued)

ID, DRAIN CURRENT (A)

2468010

2.5

2.0

1.5

1.0

gfs, TRANSCONDUCTANCE (S)

80µs PULSE TEST

0.5

VDS ≥50V

TJ = 175oC

TJ = 25oC

TJ = 175oC

TJ = 25oC

ISD, SOURCE TO DRAIN CURRENT (A)

VSD, SOURCE TO DRAIN VOLTAGE (V)

100

0.1

0 0.4 0.8 1.2 1.6 2.0

Qg(TOT), TOTAL GATE CHARGE (nC)

2468010

VGS, GATE TO SOURCE VOLTAGE (V)

VDS = 80V

VDS = 50V

VDS = 20V

ID = 3.4A

5-7

IRF510, IRF511, IRF512, IRF513

Test Circuits and Waveforms

FIGURE 15. UNCLAMPED ENERGY TEST CIRCUIT FIGURE 16. UNCLAMPED ENERGY WAVEFORMS

FIGURE 17. SWITCHING TIME TEST CIRCUIT FIGURE 18. RESISTIVE SWITCHING WAVEFORMS

FIGURE 19. GATE CHARGE TEST CIRCUIT FIGURE 20. GATE CHARGE WAVEFORM

VGS

0.01Ω

IAS

VDS

VDD

DUT

VARY tP TO OBTAIN

REQUIRED PEAK IAS

VDD

VDS

BVDSS

IAS

tAV

VGS

DUT

-VDD

tON

td(ON)

90%

10%

VDS 90%

10%

td(OFF)

tOFF

90%

50%

10% PULSE WIDTH

VGS

0.3µF

12V

BATTERY 50kΩ

VDS

DUT

IG(REF)

(ISOLATED

VDS

0.2µF

CURRENT

REGULATOR

ID CURRENT

SAMPLING

IG CURRENT

SAMPLING

SUPPLY)

RESISTOR RESISTOR

SAME TYPE

AS DUT Qg(TOT)

Qgd

Qgs

VDS

VGS

VDD

IG(REF)