2N3771
2N3772
HIGH POW ER NPN SILICON TRANSISTOR
■STMicr o electronics PREF E RRED
SALESTYPES
DESCRIPTION
The 2N3771, 2N3772 are silicon epitaxial-base
NPN transistors mounted in Jedec Jedec TO-3
metal case. They are intended for linear
amplifiers and inductive switching applications.
INT E R NAL SCH E M ATI C DIAG RA M
December 2000
12
TO-3
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
2N3771 2N3772
VCEO Collector-Emitter Voltage (IE = 0) 40 60 V
VCEV Collector-Emitter Voltage (VBE = -1.5V) 50 80 V
VCBO Collector-Base Voltag e (IB = 0) 50 100 V
VEBO Emitter-Base Voltage (IC = 0) 5 7 V
ICCollector Current 30 20 A
ICM Collector Peak Current 30 30 A
IBBase Current 7.5 5 A
IBM Base Peak Current 15 15 A
Ptot Total Dissipation at Tc ≤ 25 oC150 W
Tstg Storage Temperature -65 to 200 oC
®
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THERMAL DATA
Rthj-case Thermal Resistance Junction-ca se Max 1.17 oC/W
ELE CT RICAL CHAR ACT ERISTI CS (Tcase = 25 oC unless otherwise specif ied)
Symbol Pa rameter Test Conditions Min. Typ. Max. Unit
ICEV Collector Cut-off
Current (VBE = -1.5V) for 2N3771 VCB = 50 V
for 2N3772 VCB = 100 V
for all VCB = 30 V Tj = 150 oC
2
5
10
mA
mA
mA
ICEO Collector Cut-off
Current (IB = 0) for 2N3771 VCB = 30 V
for 2N3772 VCB = 50 V 10
10 mA
mA
ICBO Collector Cut-off
Current (IE = 0) for 2N3771 VCB = 50 V
for 2N3772 VCB = 100 V 4
5mA
mA
IEBO Emitter Cut-off Current
(IC = 0) for 2N3771 VCB = 5 V
for 2N3772 VCB = 7 V 5
5mA
mA
VCEO(sus)∗Collector-Emitter
Sustaining Voltage
(IB = 0)
IC = 0.2 A
for 2N3771
for 2N3772 40
60 V
V
VCEV(sus)∗Collector-Emitter
Sustaining Voltage
(VEB = -1.5V)
IC = 0.2 A RBE = 100 Ω
for 2N3771
for 2N3772 50
80 V
V
VCER(sus)∗Collector-Emitter
Sustaining Voltage
(RBE = 100 Ω)
IC = 0.2 A
for 2N3771
for 2N3772 45
70 V
V
VCE(sat)∗Collector-Emitter
Saturation Voltage for 2N3771
IC = 15 A IB = 1.5 A
IC = 30 A IB = 6 A
for 2N3772
IC = 10 A IB = 1 A
IC = 20 A IB = 4 A
2
4
1.4
4
V
V
V
V
VBE∗Base-Emitter Voltage for 2N3771
IC = 15 A VCE = 4 V
for 2N3772
IC = 10 A VCE = 4 A
2.7
2.7
V
V
hFE∗DC Current Ga in for 2N3771
IC = 15 A VCE = 4 V
IC = 30 A VCE = 4 V
for 2N3772
IC = 10 A VCE = 4 V
IC = 20 A VCE = 4 V
15
5
15
5
60
60
hFE Small Signal Current
Gain IC = 1 A VCE = 4 V f = 1 KHz 40
fTTransition frequency IC = 1 A VCE = 4 V f = 50 KHz 0.2 MHz
Is/b Second Breakdown
Collector Current VCE = 25 V t = 1 s (non repetitive) 6 A
∗ P ulsed: P ulse durati on = 300 µs, d uty cy cle ≤ 2 %
2N3771/2N3772
2/4
DIM. mm inch
MIN. TYP. MAX. MIN. TYP. MAX.
A 11.00 13.10 0.433 0.516
B 0.97 1.15 0.038 0.045
C 1.50 1.65 0.059 0.065
D 8.32 8.92 0.327 0.351
E 19.00 20.00 0.748 0.787
G 10.70 11.10 0.421 0.437
N 16.50 17.20 0.649 0.677
P 25.00 26.00 0.984 1.023
R 4.00 4.09 0.157 0.161
U 38.50 39.30 1.515 1.547
V 30.00 30.30 1.187 1.193
E
B
R
C
D
A
P
G
N
V
U
O
P003F
TO-3 MECHANICAL DATA
2N3771/2N3772
3/4
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2N3771/2N3772
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