PAO) 2MOS = This series of N-Channel Enhancement-mode Power MOSFETs utilizes GEs advanced Power DMOS technology to achieve low on-resistance with excellent device rugged- ness and reliability. This design has been optimized to give superior performance in most switching applications including: switching power supplies, inverters, converters and solenoid/relay drivers. Also, the extended safe operating area with good linear transfer characteristics makes it well suited for many linear applications such as audio amplifiers and servo motors. Features Polysilicon gate Improved stability and reliability e No secondary breakdown Excellent ruggedness Ultra-fast switching Independent of temperature Voltage controlled High transconductance Low input capacitance Reduced drive requirement Excellent thermal stability Ease of paralleling FIELD EFFECT POWER TRANSISTOR [F el IRF152,153 33 AMPERES 100, 60 VOLTS RDS(ON) = 0.08 0 0.845(21.47) N-CHANNEL CASE TEMP REFERENCE POINT -20(5.00) SOURCE DRAIN 0.162(4.09) pia, .18(3.84) 2 HOLES s CASE STYLE TO-204AE (TO-3) DIMENSIONS ARE IN INCHES AND (MILLIMETERS) 0.440(11.18) 0.420(10.67) 0.205(5.21) 1.197(30.40} 1.177(29.90) MAX - .358(9.09) MAX 065(1 65) je DIA + MAX as nf SEATING PLANE 0.063(1.80) pia | he L426( 10.82) MIN. 0.08711.45) 1.050(26.68) MAX." 0.675(17.15) L 0,650(16.51) -573(39.96) MAX + | _ 0.225(5.72) DRAIN (CASE) maximum ratings (Tc = 25C) (unless otherwise specified) RATING SYMBOL IRF152 IRF153 UNITS Drain-Source Voltage Voss 100 60 Volts Drain-Gate Voltage, Rag = 1M0 VpGR 100 60 Volts Continuous Drain Current @ To = 25C Ip 33 33 A To = 100C 20 20 A Pulsed Drain Current lpm 132 132 A Gate-Source Voltage Vas +20 +20 . Volts Total Power Dissipation @ Tc = 25C Pp 150 150 Watts Derate Above 25C 1.2 1.2 w/c Operating and Storage Junction Temperature Range Ty. Tste -55 to 150 ~55 to 150 C thermal characteristics Thermal Resistance, Junction to Case Reic 0.83 0.83 C/W Thermal Resistance, Junction to Ambient RaJa 30 30 C/W Maximum Lead Temperature for Soldering Purposes: 6" from Case for 5 Seconds Th 260 260 C (1) Repetitive Rating: Pulse width limited by max. junction temperature. 135electrical characteristics (Tc = 25C) (unless otherwise specified) CHARACTERISTIC | SYMBOL | MIN TYP MAX | UNIT | off characteristics Drain-Source Breakdown Voltage IRF152 BVpss 100 _ _ Volts (Vas = OV, Ip = 250 wA) IRF153 60 _ . Zero Gate Voltage Drain Current lpss (Vps = Max Rating, Vgs = OV, Tc = 25C) 250 HA (Vps = Max Rating, x 0.8, Vgg = OV, Tc = 125C) = 1000 Orne OV) ee Current lass _ _ +100 nA on characteristics Gate Threshold Voltage To = 25C | VasctH) 2.0 _ 4.0 Volts (Vps = Vas: Ip = 250 pA) On-State Drain Current | 33 _ _ A (Ves = 10V, Vps = 10V) D(ON) Static Drain-Source On-State Resistance (Vas = 10V, Ip = 20A) Rps(ON) _ 0.06 0.08 Ohms Forward Transconductance (Vps = 10V, Ip = 20A) Sts 8.1 10 mhos dynamic characteristics Input Capacitance Vas = OV Ciss _ 2800 3000 pF Output Capacitance Vos = 25V Coss _ 1000 1500 pF Reverse Transfer Capacitance f= 1 MHz Crss _ 225 500 pF switching characteristics* -Turn-on Delay Time Vps = 30V ta(on) _ 25 _ ns Rise Time Ip = 20A, Vas = 15V tr 145 ns Turn-off Delay Time RGen = 500, Regs = 12.50 ta(off) _ 95 _ ns Fall Time (Ras (EQuiv.) = 1029) tr _ 75 _ ns source-drain diode ratings and characteristics Continuous Source Current Is _ 33 A Pulsed Source Current Ism _ _ 132 A Diode Forward Voltage _ (To = 25C, Ves = OV, Is = 33A) Vsp 1.2 2.3 Volts Reverse Recovery Time ter _ 300 ns (Ig = 40A, dl,/dt = 100A/yusec, To = 125C) Qrar _ 2.8 _ uc *Pulse Test: Pulse width < 300 us, duty cycle = 2% o OPERA IN THIS AREA MAY BE LIMITED BY R Ip. DRAIN CURRENT {AMPERES} Te 25C 1 2 4 6 810 20 40 6080100 200 400 600 1000 Vpg- DRAIN-SOURCE VOLTAGE (VOLTS) MAXIMUM SAFE OPERATING AREA 136 Rosion) AND Vegirn) NORMALIZED -40 CONDITIONS: Rps(On) CONDITIONS: Ip = 20 A, Veg = 10V VasctH) CONDITIONS: Ip = 250nA, Vong = Veg 0 40 80 T,, JUNCTION TEMPERATURE (C) TYPICAL NORMALIZED Roygion, AND Vastu) VS. TEMP. Rosion) VesitH) 120 160