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Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. "Typical" parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. BSS64 BSS64 C E SOT-23 B Mark: U3 NPN General Purpose Amplifier This device is designed for general purpose high voltage amplifiers and gas discharge display driving. Sourced from Process 16. Absolute Maximum Ratings* Symbol TA = 25C unless otherwise noted Parameter Value Units VCEO Collector-Emitter Voltage 80 V VCBO Collector-Base Voltage 120 V VEBO Emitter-Base Voltage 5.0 V IC Collector Current - Continuous 200 mA TJ, Tstg Operating and Storage Junction Temperature Range -55 to +150 C *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics Symbol PD RJA TA = 25C unless otherwise noted Characteristic Total Device Dissipation Derate above 25C Thermal Resistance, Junction to Ambient *Device mounted on FR-4 PCB 40 mm X 40 mm X 1.5 mm. 1997 Fairchild Semiconductor Corporation Max Units *BSS64 350 2.8 357 mW mW/C C/W (continued) Electrical Characteristics Symbol BSS64 NPN General Purpose Amplifier TA = 25C unless otherwise noted Parameter Test Conditions Min Max Units OFF CHARACTERISTICS V(BR)CEO Collector-Emitter Breakdown Voltage IC = 4.0 mA, IB = 0 80 V V(BR)CBO Collector-Base Breakdown Voltage IC = 100 A, IE = 0 120 V V(BR)EBO Emitter-Base Breakdown Voltage IE = 100 A, IC = 0 5.0 ICBO Collector-Cutoff Current IEBO Emitter-Cutoff Current VCB = 90 V, IE = 0 VCB = 90 V, IE = 0, TA = 150C VEB = 5.0 V, IC = 0 V 0.1 50 200 A A nA 0.15 0.2 1.2 V V V ON CHARACTERISTICS hFE DC Current Gain IC = 10 mA, VCE = 1.0 V VCE(sat) Collector-Emitter Saturation Voltage VBE(sat) Base-Emitter Saturation Voltage IC = 4.0 mA, IB = 400 A IC = 50 mA, IB = 15 mA IC = 4.0 mA, IB = 400 A 20 SMALL SIGNAL CHARACTERISTICS fT Current Gain - Bandwidth Product Cob Output Capacitance IC = 4.0 mA, VCE = 10, f = 35 MHz VCB = 10 V, f = 1.0 MHz 60 MHz 5.0 pF 3 Spice Model NPN (Is=2.511f Xti=3 Eg=1.11 Vaf=100 Bf=242.6 Ne=1.249 Ise=2.511f Ikf=.3458 Xtb=1.5 Br=3.197 Nc=2 Isc=0 Ikr=0 Rc=1 Cjc=4.883p Mjc=.3047 Vjc=.75 Fc=.5 Cje=18.79p Mje=.3416 Vje=.75 Tr=1.202n Tf=560p Itf=50m Vtf=5 Xtf=8 Rb=10) Typical Pulsed Current Gain vs Collector Current 250 125 C 200 150 25 C 100 - 40 C 50 0 0.1 V C E = 5V 0.2 0.5 1 2 5 10 20 I C - COLLECTOR CURRENT (mA) 50 100 VCESAT - COLLECTOR EMITTE R VOLTAGE (V) h FE - TYP ICAL PULSED CURRE NT GAIN Typical Characteristics Collector-Emitter Saturation Voltage vs Collector Current 0.5 0.4 = 10 0.3 25 C 0.2 125 C 0.1 0 - 40 C 1 10 100 I C - COLLECTOR CURRE NT (mA) 200 (continued) Base-Emitter Saturation Voltage vs Collector Current 1 = 10 - 40 C 0.8 25 C 0.6 125 C 0.4 0.2 0 1 10 100 I C - COLLECTOR CURRE NT (mA) 200 V BEON - BASE EMITTER ON VOLTAGE (V) V BESAT - BASE EMITTER VOLTAGE (V) Typical Characteristics Base Emitter ON Voltage vs Collector Current 1 0.8 - 40 C 1 25 50 75 100 TA - AMBIE NT TEMP ERATURE ( C) 125 Input and Output Capacitance vs Reverse Voltage 30 f = 1.0 MHz CAPACITANCE (pF) 25 20 15 C ib 10 5 0 0.1 C cb 1 10 V CE - COLLECTOR VOLTAGE (V) 100 VCE = 5V 0.2 0 0.1 BV CER - BREAKDOWN VOLTAGE (V) 10 h FE - SMALL SIGNAL CURRENT GAIN I CBO- COLLE CTOR CURRENT (nA) VCB = 100V 125 C 0.4 1 10 I C - COLLECTOR CURRENT (mA) 100 200 Collector-Emitter Breakdown Voltage with Resistance Between Emitter-Base Collector-Cutoff Current vs. Ambient Temperature 50 25 C 0.6 260 I C = 1.0 mA 240 220 200 180 160 0.1 1 10 100 1000 RESISTANCE (k ) Small Signal Current Gain vs Collector Current 16 FREG = 20 MHz V CE = 10V 12 8 4 0 1 10 I C - COLLECTOR CURRENT (mA) 50 BSS64 NPN General Purpose Amplifier (continued) Typical Characteristics BSS64 NPN General Purpose Amplifier (continued) Power Dissipation vs Ambient Temperature P D - POWER DISSIPATION (mW) 350 300 250 SOT-23 200 150 100 50 0 0 25 50 75 100 TEMPERATURE ( o C) 125 150 3 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. 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