BUL216
HIGH VOLTAG E FAST-SWITCHING
NPN POWER TRANSISTOR
■STMicr o electronics PREF E RRED
SALESTYPE
■NPN TRANSISTOR
■HIGH VOLTAGE CAPABILITY
■VERY HIGH SWITCHING SPEED
■HIGH OPE RA TING JUNCTIO N
TEMP ERA TURE
■HIG H RUG G E DN ES S
APPLICATIONS
■ELECTRONIC BALLASTS FOR
FLUORESCENT LIGHTING
■SWITC H MODE POW ER SUPPLIES
DESCRIPTION
The BUL216 is manufactured using high voltage
Multiepitaxial Mesa technology for cost-effective
high performance. It uses a Hollow Emitter
struct ure to enhance switc hing speeds.
The BUL series is designed for use in lighting
applications and low cost switch-mode power
supplies.
INT E R NAL SCH E M ATI C DIAG RA M
June 2001
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
VCES Collector-Emitter Voltage (VBE = 0) 1600 V
VCEO Collector-Emitter Voltage (IB = 0) 800 V
VEBO Emitter-Base Voltage (IC = 0) 9 V
ICCollector Current 4 A
ICM Collector Peak Current (tp < 5 ms) 6 A
IBBase Current 2 A
IBM Base Peak Current (tp < 5 ms) 4 A
Ptot Total Dissipation at Tc = 25 oC90W
T
stg Storage Temp erature -65 to 150 oC
TjMax. Operating Junctio n Te mperature 150 oC
123
TO-220
®
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THERMAL DATA
Rthj-case
Rthj-amb Thermal Resistance Junction-Case Max
Thermal Resistance Junction-Amb ient Max 1.39
62.5
oC/W
oC/W
ELE CT RICAL CHAR ACT ERIST I CS (Tcase = 25 oC unless otherwise specif ied)
Symbol Pa ra meter Test Conditions Min. Typ. Max. Unit
ICES Collector Cut-off
Current (VBE = 0) VCE = 16 00 V
VCE = 16 00 V Tj = 125 oC100
500 µA
µA
ICEO Collector Cut-off
Current (IB = 0) VCE = 80 0 V 250 µA
VCEO(sus) Collector-Emitter
Sustaining Voltage IC = 100 mA L = 25 mH 800 V
VEBO Emitter-Base Voltag e
(IC = 0) IE = 10 mA 9 V
VCE(sat)∗Collector-Emitter
Saturation Voltage IC = 1 A IB = 0.2 A
IC = 2 A IB = 0.66 A 1
3V
V
VBE(sat)∗Base-Emitter
Saturation Voltage IC = 1 A IB = 0.2 A
IC = 2 A IB = 0.66 A 1.2
1.2 V
V
hFE∗DC Current Ga in IC = 0.4 A VCE = 5 V
IC = 10 mA VCE = 5 V 12
10 40
ts
tf
INDUCTIVE LOAD
Storage Time
Fall Time
IC = 1.5 A IB1 = 0.5 A
VBE(off) = -5 V RBB = 0 Ω
VCL = 250 V L = 200 µH2.1
450 3.3
720 µs
ns
ts
tf
INDUCTIVE LOAD
Storage Time
Fall Time
IC = 1.5 A IB1 = 0.5 A
VBE(off) = -5 V RBB = 0 Ω
VCL = 250 V L = 200 µH
Tj = 10 0 oC
3
600 µs
ns
∗ Pulsed: P ulse durat ion = 300 µs, duty cycle 1.5 %
Safe O perat ing Areas Derating Cur ve
BUL216
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DC Current Gain
Collector Emitter Saturation Voltage
Induct ive Fall T im e
DC Current Gain
Base Em itt er Sat uration Volt age
Inductiv e Storage Time
BUL216
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(1) Fast electro nic switc h
(2) Non-inducti ve Resistor
(3) Fast recovery rectifi er
Induct ive Fall Time Inductiv e Storage Tim e
Reverse Bias e d SOA RBSOA and Inductive Load Switc hing Test
Circuits
BUL216
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DIM. mm inch
MIN. TYP. MAX. MIN. TYP. MAX.
A 4.40 4.60 0.173 0.181
C 1.23 1.32 0.048 0.052
D 2.40 2.72 0.094 0.107
E 0.49 0.70 0.019 0.027
F 0.61 0.88 0.024 0.034
F1 1.14 1.70 0.044 0.067
F2 1.14 1.70 0.044 0.067
G 4.95 5.15 0.194 0.202
G1 2.40 2.70 0.094 0.106
H2 10.00 10.40 0.394 0.409
L2 16.40 0.645
L4 13.00 14.00 0.511 0.551
L5 2.65 2.95 0.104 0.116
L6 15.25 15.75 0.600 0.620
L7 6.20 6.60 0.244 0.260
L9 3.50 3.93 0.137 0.154
M 2.60 0.102
DIA. 3.75 3.85 0.147 0.151
P011CI
TO-220 MECHANICAL DATA
BUL216
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