The information contained in this document is being issued in advance of the production cycle for the
product. The parameters for the product may change before final production or NEC Electronics
Corporation, at its own discretion, may withdraw the product prior to its production.
Not all products and/or types are availabe in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
MOS FIELD EFFECT TRANSISTOR
NP40N055MHE,NP40N055NHE
SWITCHING
N-CHANNEL POWER MOS FET
PRELIMINARY PRODUCT INFORMATION
Document No. D18473EJ1V0PM00 (1st edition)
Date Published November 2006 NS CP(K)
Printed in Japan
2006
DESCRIPTION
These products are N-channel MOS Field Effect Transistors designed for high current switching applications.
ORDERING INFORMATION
PART NUMBER LEAD PLATING PACKING PACKAGE
NP40N055MHE-S18-AY Note Pure Sn (Tin) Tube 50 p/tube TO-220 (MP-25K) typ. 1.9 g
NP40N055NHE-S18-AY Note Pure Sn (Tin) Tube 50 p/tube TO-262 (MP-25SK) typ. 1.8 g
Note Under development
FEATURES
• Channel temperature 175 degree rated
• Super low on-state resistance
R
DS(on) = 23 mΩ MAX. (VGS = 10 V, ID = 20 A)
• Low Ciss : Ciss = 1070 pF TYP.
• Built-in gate protection diode
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage VDSS 55 V
Gate to Source Voltage VGSS ±20 V
Drain Current (DC) ID(DC) ±40 A
Drain Current (Pulse) Note1 ID(pulse) ±100 A
Total Power Dissipation (TA = 25°C) PT 1.8 W
Total Power Dissipation (TC = 25°C) PT 66 W
Channel Temperature Tch 175 °C
Storage Temperature Tstg −55 to +175 °C
Single Avalanche Current Note2 IAS 29/21/7 A
Single Avalanche Energy Note2 EAS 0.8/44/49 mJ
Notes 1. PW ≤ 10
μ
s, Duty cycle ≤ 1%
2. Starting Tch = 25°C, VDD = 28 V, RG = 25 Ω , VGS = 20 → 0 V (See Figure 4.)
THERMAL RESISTANCE
Channel to Case Thermal Resistance Rth(ch-C) 2.27 °C/W
Channel to Ambient Thermal Resistance Rth(ch-A) 83.3 °C/W
(TO-220)
(TO-262)
Preliminary Product Information D18473EJ1V0PM
2
NP40N055MHE,NP40N055NHE
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Drain to Source On-state Resistance RDS(on) VGS = 10 V, ID = 20 A 18 23 mΩ
Gate to Source Threshold Voltage VGS(th) VDS = VGS, ID = 250
μ
A 2.0 3.0 4.0 V
Forward Transfer Admittance | yfs | VDS = 10 V, ID = 20 A 7 14 S
Drain Leakage Current IDSS VDS = 55 V, VGS = 0 V 10
μ
A
Gate to Source Leakage Current IGSS VGS = ±20 V, VDS = 0 V ±10
μ
A
Input Capacitance Ciss 1070 1610 pF
Output Capacitance Coss 190 280 pF
Reverse Transfer Capacitance Crss
VDS = 25 V
VGS = 0 V
f = 1 MHz 95 180 pF
Turn-on Delay Time td(on) 16 35 ns
Rise Time tr 9.2 23 ns
Turn-off Delay Time td(off) 29 57 ns
Fall Time tf
ID = 20 A
VGS = 10 V
VDD = 28 V
RG = 1 Ω
9.2 23 ns
Total Gate Charge QG 23 35 nC
Gate to Source Charge QGS 6 nC
Gate to Drain Charge QGD
ID = 40 A
VDD = 44 V
VGS = 10 V 9 nC
Body Diode Forward Voltage VF(S-D) IF = 40 A, VGS = 0 V 1.0 V
Reverse Recovery Time trr 38 ns
Reverse Recovery Charge Qrr
IF = 40 A, VGS = 0 V
di/dt = 100 A/
μ
s 46 nC
TEST CIRCUIT 3 GATE CHARGE
V
GS
= 20
→
0
V
PG.
R
G
= 25 Ω
50 Ω
D.U.T. L
V
DD
TEST CIRCUIT 1 AVALANCHE CAPABILITY
PG.
D.U.T. R
L
V
DD
TEST CIRCUIT 2 SWITCHING TIME
R
G
PG.
I
G
= 2 mA
50 Ω
D.U.T. R
L
V
DD
I
D
V
DD
I
AS
V
DS
BV
DSS
Starting T
ch
V
GS
0
τ = 1 s
Duty Cycle ≤ 1 %
τ
V
GS
Wave Form
V
DS
Wave Form
V
GS
V
DS
10
%
0
0
90
%
90
%
90
%
V
GS
V
DS
t
on
t
off
t
d(on)
t
r
t
d(off)
t
f
10
%10
%
μ
Preliminary Product Information D18473EJ1V0PM 3
NP40N055MHE,NP40N055NHE
TYPICAL CHARACTERISTICS (TA = 25°C )
Figure2. TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
T
C
- Case Temperature - ˚C
P
T
- Total Power Dissipation - W
0025 50 75 100 125 150 175 200
70
60
50
40
30
20
10
Figure.3 FORWARD BIAS SAFE OPERATING AREA
Figure1. DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
dT - Percentage of Rated Power - %
0
025 50 75 100 125 150 175 200
20
40
60
80
100
Figure4. SINGLE AVALANCHE ENERGY
DERATING FACTOR
Starting T
ch
- Starting Channel Temperature - ˚C
Single Pulse Avalanche Energy - mJ
0
25
30
40
50
60
50 75 100 125 150 175
10
20
T
C
- Case Temperature - ˚C
IAS = 7 A
0.8 mJ
49 mJ
44 mJ
29 A
21 A
Figure5.
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
PW - Pulse Width - s
r
th(t)
- Transient Thermal Resistance - ˚C/W
10
0.01
0.1
1
100
1000
1 m 10 m 100 m 1 10 100 1000
Single Pulse
R
th(ch-A)
= 83.3˚C/W
10 100
R
th(ch-C)
= 2.27˚C/W
μμ
V
DS -
Drain to Source Voltage - V
I
D
- Drain Current - A
1
0.1
10
100
1000
1 10 100
T
C
= 25˚C
Single Pulse
0.1
I
D(pulse)
PW = 10 μs
100 μs
1 ms
DC
R
DS(on)
Limited
(at V
GS
= 10 V)
I
D(DC)
Power Dissipation
Limited
Preliminary Product Information D18473EJ1V0PM
4
NP40N055MHE,NP40N055NHE
Figure8. FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
Figure9. DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
Figure10. DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
Figure11. GATE TO SOURCE THRESHOLD VOLTAGE vs.
CHANNEL TEMPERATURE
T
ch
- Channel Temperature - ˚C
V
GS(th)
- Gate to Source Threshold Voltage - V
I
D
- Drain Current - A
| y
fs
| - Forward Transfer Admittance - S
V
GS
- Gate to Source Voltage - V
R
DS(on)
- Drain to Source On-state Resistance - mΩ
0
042681012
10
1
100
14 16 18
0.1 10
20
30
40
50
I
D
- Drain Current - A
R
DS(on)
- Drain to Source On-state Resistance - mΩ
10
10.1
50
20
30
40
10 100
Pulsed
0
V
GS
= 10 V
0.01
0.01 0.1 1 10 100
Pulsed
Pulsed
V
DS
= 10 V
T
A
= 175˚C
75˚C
25˚C
−55˚C I
D
= 20 A
1.0
V
DS
= V
GS
I
D
= 250 A
2.0
3.0
4.0
−50 0 50 100 150
0
μ
Figure7. DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
Figure6. FORWARD TRANSFER CHARACTERISTICS
V
DS
- Drain to Source Voltage - V
I
D
- Drain Current - A
V
GS
- Gate to Source Voltage - V
I
D
- Drain Current - A
1
0.1 002354
40
10
100
1000
Pulsed
100
120
80
60
1
Pulsed
2
V
GS
=10 V
34 6 75
V
DS
= 10 V
20
T
A
= −55˚C
25˚C
75˚C
150˚C
175˚C
Preliminary Product Information D18473EJ1V0PM 5
NP40N055MHE,NP40N055NHE
Figure12. DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
T
ch
- Channel Temperature - ˚C
R
DS(on)
- Drain to source On-state Resistance - mΩ
Figure13. SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
Figure14. CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE Figure15. SWITCHING CHARACTERISTICS
0
10
−50
20
30
40
050 100 150
Figure16. REVERSE RECOVERY TIME vs.
DRAIN CURRENT
50
Figure17. DYNAMIC INPUT/OUTPUT CHARACTERISTICS
V
GS
= 10 V
1.0
I
SD
- Diode Forward Current - A
01.5
V
SD
- Source to Drain Voltage - V
0.5
Pulsed
0.1
1
10
100
1000
V
DS
- Drain to Source Voltage - V
C
iss
, C
oss
, C
rss
- Capacitance - pF
I
D
- Drain Current - A
t
d(on)
, t
r
, t
d(off)
, t
f
- Switching Time - ns
10.1
0.1
100
10
1000
10000
1 10 100
V
GS
= 0 V
f = 1 MHz
1
10
1000
100
10 100
V
GS
- Gate to Source Voltage - V
I
F
- Drain Current - A
t
rr
- Reverse Recovery Time - ns
di/dt = 100 A/ s
V
GS
= 0 V
1
0.1
10
1 10 100
Q
G
- Gate Charge - nC
V
DS
- Drain to Source Voltage - V
00402010 30
20
40
60
80
2
4
V
DS
1000
100
6
10
12
14
16
8
V
GS
Pulsed
μ
V
GS
= 10 V
V
GS
= 0 V
C
oss
C
rss
C
iss
t
d(on)
t
d(off)
t
f
t
r
V
DD
= 44 V
I
D
= 40 A
28 V
11 V
I
D
= 20 A
Preliminary Product Information D18473EJ1V0PM
6
NP40N055MHE,NP40N055NHE
PACKAGE DRAWINGS (Unit: mm)
TO-220 (MP-25K) Note TO-262 (MP-25SK) Note
Note Under development
EQUIVALENT CIRCUIT
Source
Body
Diode
Gate
Protection
Diode
Gate
Drain
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage exceeding the
rated voltage may be applied to this device.
Preliminary Product Information D18473EJ1V0PM 7
NP40N055MHE,NP40N055NHE
MARKING INFORMATION
RECOMMENDED SOLDERING CONDITIONS
These products should be soldered and mounted under the following recommended conditions.
For soldering methods and conditions other than those recommended below, please contact an NEC Electronics
sales representative.
For technical information, see the following website.
Semiconductor Device Mount Manual (http://www.necel.com/pkg/en/mount/index.html)
Soldering Method Soldering Condition Recommended
Condition Symbol
Wave soldering
MP-25K, MP-25SK
Maximum temperature (Solder temperature): 260°C or below
Time: 10 s or less
Maximum chlorine content of rosin flux: 0.2% (wt.) or less
THDWS
Partial heating
MP-25K, MP-25SK
Maximum temperature (Pin temperature): 350°C or below
Time (per side of the device): 3 seconds or less
Maximum chlorine content of rosin flux: 0.2% (wt.) or less
P350
HE
40N055
NP40N055MHE,NP40N055NHE
The information contained in this document is being issued in advance of the production cycle for the
product. The parameters for the product may change before final production or NEC Electronics
Corporation, at its own discretion, may withdraw the product prior to its production.
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of NEC Electronics. NEC Electronics assumes no responsibility for any errors that may appear in this document.
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(Note)
•
•
•
•
•
•
M5 0 2. 11-1
(1)
(2)
"NEC Electronics" as used in this statement means NEC Electronics Corporation and also includes its
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