PRELIMINARY PRODUCT INFORMATION MOS FIELD EFFECT TRANSISTOR NP40N055MHE,NP40N055NHE SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION These products are N-channel MOS Field Effect Transistors designed for high current switching applications. ORDERING INFORMATION PART NUMBER LEAD PLATING PACKING NP40N055MHE-S18-AY Note PACKAGE Pure Sn (Tin) Tube 50 p/tube TO-220 (MP-25K) typ. 1.9 g NP40N055NHE-S18-AY Note Pure Sn (Tin) Tube 50 p/tube TO-262 (MP-25SK) typ. 1.8 g Note Under development FEATURES * Channel temperature 175 degree rated * Super low on-state resistance (TO-220) RDS(on) = 23 m MAX. (VGS = 10 V, ID = 20 A) * Low Ciss : Ciss = 1070 pF TYP. * Built-in gate protection diode ABSOLUTE MAXIMUM RATINGS (TA = 25C) Drain to Source Voltage VDSS 55 V Gate to Source Voltage VGSS 20 V Drain Current (DC) Drain Current (Pulse) Note1 ID(DC) 40 A ID(pulse) 100 A Total Power Dissipation (TA = 25C) PT 1.8 W Total Power Dissipation (TC = 25C) PT 66 W Channel Temperature Tch 175 C Tstg -55 to +175 C Single Avalanche Current Note2 IAS 29/21/7 A Single Avalanche Energy Note2 EAS 0.8/44/49 mJ Storage Temperature (TO-262) Notes 1. PW 10 s, Duty cycle 1% 2. Starting Tch = 25C, VDD = 28 V, RG = 25 , VGS = 20 0 V (See Figure 4.) THERMAL RESISTANCE Channel to Case Thermal Resistance Rth(ch-C) 2.27 C/W Channel to Ambient Thermal Resistance Rth(ch-A) 83.3 C/W The information contained in this document is being issued in advance of the production cycle for the product. The parameters for the product may change before final production or NEC Electronics Corporation, at its own discretion, may withdraw the product prior to its production. Not all products and/or types are availabe in every country. Please check with an NEC Electronics sales representative for availability and additional information. Document No. D18473EJ1V0PM00 (1st edition) Date Published November 2006 NS CP(K) Printed in Japan 2006 NP40N055MHE,NP40N055NHE ELECTRICAL CHARACTERISTICS (TA = 25C) CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT 18 23 m 4.0 V Drain to Source On-state Resistance RDS(on) VGS = 10 V, ID = 20 A Gate to Source Threshold Voltage VGS(th) VDS = VGS, ID = 250 A 2.0 3.0 Forward Transfer Admittance | yfs | VDS = 10 V, ID = 20 A 7 14 Drain Leakage Current IDSS VDS = 55 V, VGS = 0 V 10 A Gate to Source Leakage Current IGSS VGS = 20 V, VDS = 0 V 10 A Input Capacitance Ciss VDS = 25 V 1070 1610 pF Coss VGS = 0 V 190 280 pF 95 180 pF ID = 20 A 16 35 ns VGS = 10 V 9.2 23 ns 29 57 ns 9.2 23 ns 35 nC Output Capacitance Reverse Transfer Capacitance Crss Turn-on Delay Time td(on) Rise Time tr Turn-off Delay Time td(off) Fall Time tf f = 1 MHz VDD = 28 V RG = 1 S Total Gate Charge QG ID = 40 A 23 Gate to Source Charge QGS VDD = 44 V 6 nC 9 nC IF = 40 A, VGS = 0 V 1.0 V trr IF = 40 A, VGS = 0 V 38 ns Qrr di/dt = 100 A/s 46 nC Gate to Drain Charge QGD Body Diode Forward Voltage VF(S-D) Reverse Recovery Time Reverse Recovery Charge VGS = 10 V TEST CIRCUIT 1 AVALANCHE CAPABILITY D.U.T. RG = 25 PG. VGS = 20 0 V TEST CIRCUIT 2 SWITCHING TIME D.U.T. L 50 VGS RL Wave Form RG PG. VDD VGS 0 VGS 10 % 90 % VDD VDS 90 % BVDSS IAS VDS VDS ID Starting Tch = 1 s Duty Cycle 1 % TEST CIRCUIT 3 GATE CHARGE PG. 2 50 10 % 10 % 0 Wave Form VDD D.U.T. IG = 2 mA 90 % VDS VGS 0 RL VDD Preliminary Product Information D18473EJ1V0PM td(on) tr ton td(off) tf toff NP40N055MHE,NP40N055NHE TYPICAL CHARACTERISTICS (TA = 25C ) Figure1. DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA Figure2. TOTAL POWER DISSIPATION vs. CASE TEMPERATURE PT - Total Power Dissipation - W dT - Percentage of Rated Power - % 70 100 80 60 40 20 0 0 25 50 75 50 40 30 20 10 0 100 125 150 175 200 25 0 50 75 100 125 150 175 200 TC - Case Temperature - C TC - Case Temperature - C Figure.3 FORWARD BIAS SAFE OPERATING AREA Figure4. SINGLE AVALANCHE ENERGY DERATING FACTOR 100 ID(pulse) d ite ) Lim 0 V ID(DC) n) = 1 o ( S DC Po RD t VGS Lim wer (a D i ted 10 PW 10 1m s Single Pulse Avalanche Energy - mJ 1000 =1 0 s 0 s iss ipa tio n 1 TC = 25C Single Pulse 0.1 0.1 1 10 60 49 mJ 44 mJ 50 40 IAS = 7 A 21 A 29 A 30 20 10 0.8 mJ 0 25 100 VDS - Drain to Source Voltage - V 50 75 100 125 150 175 Starting Tch - Starting Channel Temperature - C Figure5. TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH 1000 rth(t) - Transient Thermal Resistance - C/W ID - Drain Current - A 60 100 Rth(ch-A) = 83.3C/W 10 Rth(ch-C) = 2.27C/W 1 0.1 Single Pulse 0.01 10 100 1m 10 m 100 m 1 10 100 1000 PW - Pulse Width - s Preliminary Product Information D18473EJ1V0PM 3 NP40N055MHE,NP40N055NHE Figure7. DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE Figure6. FORWARD TRANSFER CHARACTERISTICS 1000 120 Pulsed ID - Drain Current - A ID - Drain Current - A 100 100 TA = -55C 25C 75C 150C 175C 10 1 0.1 80 VGS =10 V 60 40 20 2 3 4 VDS = 10 V 6 7 5 Pulsed 0 0 10 TA = 175C 75C 25C -55C 0.1 0.1 1 10 100 RDS(on) - Drain to Source On-state Resistance - m ID - Drain Current - A 4 Figure10. DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 50 Pulsed 40 30 VGS = 10 V 20 10 0 0.1 1 10 ID - Drain Current - A 100 RDS(on) - Drain to Source On-state Resistance - m Figure8. FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT 100 Pulsed VDS = 10 V 0.01 0.01 4 3 5 VDS - Drain to Source Voltage - V VGS(th) - Gate to Source Threshold Voltage - V | yfs | - Forward Transfer Admittance - S VGS - Gate to Source Voltage - V 1 2 1 Figure9. DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 50 Pulsed 40 30 ID = 20 A 20 10 0 0 2 4 6 8 10 14 12 16 18 VGS - Gate to Source Voltage - V Figure11. GATE TO SOURCE THRESHOLD VOLTAGE vs. CHANNEL TEMPERATURE VDS = VGS ID = 250 A 4.0 3.0 2.0 1.0 0 -50 0 50 100 150 Tch - Channel Temperature - C Preliminary Product Information D18473EJ1V0PM Figure13. SOURCE TO DRAIN DIODE FORWARD VOLTAGE Figure12. DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE 1000 Pulsed 40 30 VGS = 10 V 20 10 ID = 20 A -50 50 0 100 Pulsed 100 VGS = 10 V VGS = 0 V 10 1 0.1 0 150 Tch - Channel Temperature - C VSD - Source to Drain Voltage - V Figure14. CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE 10000 VGS = 0 V f = 1 MHz Ciss 1000 Coss 100 10 0.1 Crss 1 10 Figure15. SWITCHING CHARACTERISTICS 1000 tf 100 td(off) td(on) tr 10 1 0.1 100 100 10 10 100 Figure17. DYNAMIC INPUT/OUTPUT CHARACTERISTICS 16 80 VDS - Drain to Source Voltage - V trr - Reverse Recovery Time - ns di/dt = 100 A/s VGS = 0 V 1 100 ID - Drain Current - A Figure16. REVERSE RECOVERY TIME vs. DRAIN CURRENT 1 0.1 10 1 VDS - Drain to Source Voltage - V 1000 1.5 1.0 0.5 14 12 60 VGS VDD = 44 V 28 V 11 V 40 10 8 6 4 20 2 VDS 0 0 IF - Drain Current - A 10 ID = 40 A 20 30 VGS - Gate to Source Voltage - V 0 ISD - Diode Forward Current - A 50 td(on), tr, td(off), tf - Switching Time - ns Ciss, Coss, Crss - Capacitance - pF RDS(on) - Drain to source On-state Resistance - m NP40N055MHE,NP40N055NHE 40 QG - Gate Charge - nC Preliminary Product Information D18473EJ1V0PM 5 NP40N055MHE,NP40N055NHE PACKAGE DRAWINGS (Unit: mm) TO-220 (MP-25K) Note TO-262 (MP-25SK) Note Note Under development EQUIVALENT CIRCUIT Drain Body Diode Gate Gate Protection Diode Remark Source The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. 6 Preliminary Product Information D18473EJ1V0PM NP40N055MHE,NP40N055NHE MARKING INFORMATION 40N055 HE RECOMMENDED SOLDERING CONDITIONS These products should be soldered and mounted under the following recommended conditions. For soldering methods and conditions other than those recommended below, please contact an NEC Electronics sales representative. For technical information, see the following website. Semiconductor Device Mount Manual (http://www.necel.com/pkg/en/mount/index.html) Soldering Method Soldering Condition Wave soldering Maximum temperature (Solder temperature): 260C or below MP-25K, MP-25SK Time: 10 s or less Recommended Condition Symbol THDWS Maximum chlorine content of rosin flux: 0.2% (wt.) or less Partial heating Maximum temperature (Pin temperature): 350C or below MP-25K, MP-25SK Time (per side of the device): 3 seconds or less P350 Maximum chlorine content of rosin flux: 0.2% (wt.) or less Preliminary Product Information D18473EJ1V0PM 7 NP40N055MHE,NP40N055NHE * The information contained in this document is being issued in advance of the production cycle for the product. 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